BAW62 PH Search Results

diode rj 93

Contextual Info: bbSB^Bl DQ2b352 40b « A P X N AMER PHILIPS/PISCRETE blE D BAW62 y V HIGH-SPEED SILICON DIODE Planar epitaxial high-speed diode in a DO-35 envelope. The BAW62 is primarily intended for fast logic applications. QUICK REFERENCE DATA Continuous reverse voltage

pm2222a

Abstract: SOD80C PHILIPS BCB47B 1N4148 SOD80C PMBTA64 PXTA14 BF960 FET BFW11 BF345C BC558B PHILIPS
Contextual Info: Philips Semiconductors Index Surface Mounted Semiconductors Alphanumeric index: types added to the range since the last issue of handbook SC10 1991 issue are shown in bold print. TYPE NUMBER PACKAGE NEAREST CONVENTIONAL TYPE(S) DEVICE TYPE PAGE COMPLEMENT

PM7520

Abstract: RESISTOR CR25 RESISTOR pr37 RESISTOR CR25 philips CR25 resistor PM3260 HP8620 PR37 RESISTOR blw32 s parameter philips resistor CR25
Contextual Info: APPLICATION NOTE Wide-band linear power amplifiers 470 − 860 MHz with the transistors BLW32 and BLW33 ECO7806 Philips Semiconductors Wide-band linear power amplifiers (470 − 860 MHz) with the transistors BLW32 and BLW33 CONTENTS 1 ABSTRACT 2 INTRODUCTION

ic TDA7021T

Abstract: TDA7050T BAW62 MS-012AA TDA7021T TDA7040T
Contextual Info: INTEGRATED CIRCUITS DATA SHEET TDA7040T Low voltage PLL stereo decoder Product specification File under Integrated Circuits, IC01 September 1986 Philips Semiconductors Product specification Low voltage PLL stereo decoder TDA7040T GENERAL DESCRIPTION The TDA7040T is a monolithic integrated circuit for low cost FM stereo radios with an absolute minimum of peripheral

BAS316 equivalent

Abstract: Zener Diodes 300v BAS16-03W BAS125 BAS40 equivalent bav20 BAS316 / BAS16-03W 1SS376 bas16 cross reference 1PS301
Contextual Info: Philips Semiconductors Small-signal Transitors and Diodes Cross Reference Diodes PHILIPS GA DIODES CROSS-REFERENCE Schottky diodes COMPETITOR TYPE-NUMBER PHILIPS TYPE-NUMBER COMPETITOR TYPE-NUMBER PHILIPS TYPE-NUMBER BAS125 BAT54 BAS70-06W BAS125-04 BAT54S

TDA7021T

Abstract: TDA7040 BAW62 MS-012AA TDA7040T TDA7050T
Contextual Info: 34 .807IRELESS IMPORTANT NOTICE Dear customer, As from August 2nd 2008, the wireless operations of NXP have moved to a new company, ST-NXP Wireless. As a result, the following changes are applicable to the attached document. ● Company name - Philips Semiconductors is replaced with ST-NXP Wireless.

Contextual Info: • bbS3S31 Q02M355 330 H A P X N AMER PHILIPS/DISCRETE BAV70 b7E J> JV SILICON PLANAR EPITAXIAL HIGH-SPEED DIODES The BAV70 consists o f tw o diodes in a microminiature plastic envelope. The cathodes are commoned and the unit is intended for high-speed switching in thick and thin-film circuits.

Contextual Info: bhsa^ai QQ242S4 S13 • APX Philips Semiconductors — — N AMER PHILIPS/DISCRETE Silicon planar epitaxial high-speed diode DESCRIPTION Silicon epitaxial high-speed diode in a microminiature plastic envelope. It is intended for high-speed switching applications.

Contextual Info: Philips Semiconductors Product specification Silicon planar epitaxial high-speed diode DESCRIPTION Silicon epitaxial high-speed diode in a microminiature plastic envelope. It is intended for high-speed switching applications. BAL99 QUICK REFERENCE DATA PARAMETER

Contextual Info: b3E » • bb53cl31 DDEbl^fi 74*3 H A P X BAS16 N AMER PHILIPS/DISCRETE SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE Silicon epitaxial high-speed diode in a microminiature plastic envelope. It is intended for high-speed switching in hybrid thick and thin-film circuits.

Contextual Info: • b b S B ' m 002432b S3T ■ APX P h ilip ^ e m ic o n d u c to re N AMER PHILIPS/DISCRETE b?E T> Product specification Silicon planar epitaxial high-speed diode DESCRIPTION Silicon epitaxial high-speed diode in a microminiature plastic envelope. It is intended for high-speed switching

Philips fr 153 30

Contextual Info: • bbS3T31 ODEMST? TOT « A P X N AUER PHILIPS/DISCRETE b7E ]> BAS56 J V SILICON PLANAR EPITAXIAL ULTRA-HIGH SPEED DIODE The BAS56 consists of two separate planar epitaxial ultra-high speed, high conductance diodes in one microminiature plastic envelope intended for surface mounting.

Contextual Info: bbsa'm odsmsti « apx Philips Semiconductors Product specification Silicon planar epitaxial high-speed diode N DESCRIPTION Silicon epitaxial high-speed diode in a microminiature plastic envelope. It is intended for high-speed switching applications. BAS55

Contextual Info: • bbSBSBl 0054276 T57 H A P X N AUER PHILIPS/DISCRETE BAS28 b7E D J V SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE The BAS28 consists of two separate diodes in one microminiature envelope intended for surface mounting. It concerns fast-switching general-purpose diodes.

a7p marking

Contextual Info: • ^53*131 QQE43b7 OSE « A P X N AMER PHILIPS/DISCRETE BAV99 L7E D ; v SILICON PLANAR EPITAXIAL HIGH-SPEED DIODES The BAV99 consists of two diodes in a microminiature plastic envelope. The diodes are connected in series and the unit is intended for high-speed switching in thick and thin-film circuits.

Contextual Info: Philips Sem iconductors Product specification Silicon planar epitaxial high-speed diode DESCRIPTION Silicon epitaxial high-speed diode in a microminiature plastic envelope. It is intended for high-speed switching applications. BAS55 QUICK REFERENCE DATA SYMBOL

volt in ic of laptop motherboard

Abstract: ZJY-M4A laptop motherboard resistors ic laptop motherboard usb dac UDA1321 UDA1321PS DML98001 computer keyboards circuits N103
Contextual Info: TECHNICAL REPORT USB AUDIO-DAC UDA1321 EVALUATION BOARD AND APPLICATION DOCUMENTATION Version 1.4 DML98001 Philips Semiconductors, Inc. BLITS, Digital Media Lab USB-DAC UDA1321 Technical Report DML98001 TECHNICAL REPORT USB AUDIO-DAC UDA1321 EVALUATION BOARD

Contextual Info: b b S B ^ l 002b2^2 APX 101 BAV10 N AMER PHILIPS/DISCRETE ULTRA-HIGH-SPEED DIODES Silicon planar epitaxial, ultra-high-speed, high-conductance diode in a DO-35 envelope. The BAV10 is prim arily intended for core gating in very fast m em ories. QUICK REFERENCE DATA

Contextual Info: N AMER PHILIPS/DISCRETE bTE D bbS3^31 OOEflObS 1Tb IAPX SILICON PLANAR TRANSISTOR N-P-N double diffused transistor in a TO-39 metal envelope designed for a wide variety of applications including d.c. amplifiers, high-speed switching and high-speed amplifiers.

Contextual Info: P hilips Sem iconductors Product specification Silicon planar epitaxial high-speed diode DESCRIPTION Silicon epitaxial high-speed diode in a microminiature plastic envelope. It is intended for high-speed switching applications. November 1993 BAS678 QUICK REFERENCE DATA

RADIO RECEIVER IC FM stereo

Abstract: tda1572 application note TDA1572 FM radio CIRcuit DIAGRAM TDA1597 TDA1597T 18-pin fm demodulator
Contextual Info: INTEGRATED CIRCUITS DATA SHEET TDA1597 IF amplifier/demodulator for FM radio receivers Preliminary specification File under Integrated Circuits, IC01 May 1994 Philips Semiconductors Preliminary specification IF amplifier/demodulator for FM radio receivers

BAS16WT1

Abstract: BAS16WT1G BAW62 diode marking code A6
Contextual Info: BAS16WT1 Preferred Device Silicon Switching Diode Features • Pb−Free Package is Available http://onsemi.com 3 CATHODE MAXIMUM RATINGS TA = 25°C Symbol Value Unit Continuous Reverse Voltage VR 75 V Recurrent Peak Forward Current IR 200 mA IFM(surge)

BAS16WT1G

Abstract: BAW62
Contextual Info: BAS16WT1G Silicon Switching Diode Features • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com 3 CATHODE MAXIMUM RATINGS TA = 25C Symbol Value Unit Continuous Reverse Voltage VR 75 V Recurrent Peak Forward Current

sc-70 a6

Abstract: SBAS16WT1G sbas16wt 0095E-13
Contextual Info: BAS16WT1G, SBAS16WT1G Silicon Switching Diode Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique • Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS