BAX 19 Search Results

Mazda company

Contextual Info: MAZDA U.30I EFFICIENCY DIODE Indirectly heated—for series operation RATING Heater Current aapa Ih B eater Voltage (volts) ▼h M ax im Peak Inverse Anode Voltage { volts) P. I.V . (Bax) M a rlia Mean Anode Current (mA) 0.2 28 * 4,500 Ia(av)aax. 130 150

WS57C191-55

Abstract: 24PIN
Contextual Info: - 7C 19 1 m % ft £ X4 «/ y OC TMC nax ns) TCAC max (ns) TOH oax (ns) tg TOE max (ns) TOD VDD (ns) (V) m 1r\ A I DD/STANDBY (mA) VIL max (V) VIH rain (V) tuu/mæ« et Ci Bax (pF) V O L / I VOL Eiax (V/ b A) V O H / 1 VOH min (V/iA) WS57C 1 9 1-40 WAFERSCALE

an51

Contextual Info: rEHEPATOPHbIM TPMOfl ry-45A TRIODE reHepaTopHbiii Tpnofl ry-45A npeflHa3HaneH fl/ia p a ó o T b i b K a n e c T B e y cm iM T e rm m ou^hoctu, M O flyrm - Topa Bax. hjim reHepaTopa b paflMOTexHUHecKMX ycTpoficT- $ 116* 0,5 OBLILE CBEflEHMfl K a T O fl - C X EM A

Contextual Info: From; ABP FAX To: Hilda Stancato 10-18-00 3:08pm p. 4 of 18 lu-iu-uu from: ABP bAX To: Hilda Stancato pftAKlfXG BADE IN TH1RO ANGLE P R O JE C T IO N |_ t h i s d r a w in g i s u n p u b l i s h e d . I r e l e a s e d FQft p u b l i c a t i o n

Contextual Info: AMP Aerospace/R uggedized Printed C ircuit Board Connectors Catalog 296350 issued 9-97 Extended M ini-Bax Pin Header Assem blies Style I H o u sing M a t e r ia l— L iq u ic c ry s ta l p o ly m e r C o n tact M a te r ia l an d F in is h — B ra ss p er Q Q -B -6 2 B p a tari 0 0 0 0 5 0

BAV105

Abstract: BAS561 Diode BAx 1PS181 1PS184 1PS193 1PS226 philips 1n4148 DIODE "Philips Semiconductors" BAX DO-35 Diode BAX 12
Contextual Info: Philips Semiconductors Concise Catalogue 1996 SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal diodes HIGH-SPEED SWITCHING AND GENERAL-PURPOSE DIODES OVERVIEW family VR lF max. V max. (mA) SINGLE DIODES BAW62/ 25 200 BAS 16 100 30

ay0a

Abstract: ay0c
Contextual Info: DATA SHEET O K I A S I C P R O D U C T S Embedded Synchronous DRAM Mega Macrocell 0.25µm Mixed 2.5-V/3-V MG63P/64P/65P CSA July 1999 • 0.25µm Mixed 2.5-V/3-V MG63P/64P/65P CSA ■ –––––––––––––––––––––––––––––––––––––––––––––––––––––

ay0a

Abstract: AX0A bax1 ay0c
Contextual Info: DATA SHEET O K I A S I C P R O D U C T S Embedded Synchronous DRAM Mega Macrocell 0.25µm Mixed 2.5-V/3-V MG63P/64P/65P CSA August 1999 • 0.25µm Mixed 2.5-V/3-V MG63P/64P/65P CSA ■ –––––––––––––––––––––––––––––––––––––––––––––––––––––

FD6666 diode

Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Contextual Info: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5

BAV234

Abstract: BAS616 diode BAV105 BAV991 1PS193 BAL74W "Philips Semiconductors" BAX DO-35 BAS678 BAW62 SOT23 PMBD914
Contextual Info: Philips Semiconductors Concise Catalogue 1996 SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal diodes HIGH-SPEED SWITCHING AND GENERAL-PURPOSE DIODES ratings type number characteristics Vr max. V Ip max. (mA) BA220 BA221 BA316 BA317

BA100 diode

Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
Contextual Info: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any

Diode BAY 46

Abstract: Diode BAY 45 Diode BAY 21 Diode BAY 80 Diode BAY 19 BAY 73 diode Diode BAY 41 Diode BAY 72 Diode BAY 42 bav 21 diode
Contextual Info: th o m so n -csf general purpose and switching diode selector guide guide de sélection diodes de com m utation et usage général Case \> F A V 200.225 m A 100.150 m A 50.90 m A 400 m A Vr( V » \ 10 25 €£043 1N456 J 1N 456 A W 449)1 1 30 rtm a a j

bax 50

Contextual Info: 16 Megabit FlashBank Memory FEATURES: • Single 3.0-Volt Read and Write Operations • Separate Memory Banks by Address Space • Superior Reliability – Endurance: Pr el im in ar y – Bank1: 4Mbit 256K x 16 / 512K x 8 Flash – Bank2: 12Mbit (768K x 16 / 1536K x 8) Flash

HBF4727A

Abstract: ZD 607 - triac ZD 607 - triac circuit hbf 4727a TDA3310 hbf4727 HBF4740 DTL-930 7-stage frequency divider BF479S
Contextual Info: / h o f t f o f m A T E ^SEMICONDUCTOR “ PRODUCTS 1979/80 I NT RODUCTI ON This publication aims to provide condensed information on the vast range of standard devices currently produced by SGS-ATES. For easy consultation the products have been divided into several sections according to the main product

LE28DW3212AT-80B

Abstract: sanyo sax
Contextual Info: 32 Megabit FlashBank Memory FEATURES: • Single 3.0-Volt Read and Write Operations • Separate Memory Banks by Address Space • Superior Reliability – Endurance: Pr el im in ar y – Bank1: 16Mbit 1024K x 16 / 2048K x 8 Flash – Bank2: 16Mbit (1024K x 16 / 2048K x 8) Flash

F14E

Abstract: F12E Sakata F13E LE28BW168T 2596H
Contextual Info: 16 Megabit FlashBank Memory FEATURES: • Single 3.0-Volt Read and Write Operations Sp ec ifi ca tio ns LE28BW168T • • Separate Memory Banks by Address Space – Simultaneous Read and Write Capability • Superior Reliability – Endurance: 10,000 Cycles

LE28DW3215AT-80

Abstract: flash "simultaneous read write" 198 DQ15-DQ0 A20-A0
Contextual Info: 32 Megabit FlashBank Memory LE28DW3215AT-80 1 FEATURES: Single 3.0-Volt Read and Write Operations Separate Memory Banks by Address Space − Bank1: 16Mbit 1024K x 16 Flash − Bank2: 16Mbit(1024K x 16) Flash − Simultaneous Read and Write Capability Superior Reliability

f16e

Contextual Info: 8 Megabit FlashBank Memory FEATURES: • Single 3.0-Volt Read and Write Operations Sp ec ifi ca tio ns LE28DW8102T • • Separate Memory Banks by Address Space – Simultaneous Read and Write Capability • Superior Reliability – Endurance: 10,000 Cycles

PDC401B2

Abstract: 78L05 524 PDC401 MXD2125E 16f873 MEMSIC inclinometer operation "Crystal Oscillator" 4mhz MXD2125 16f873 datasheet
Contextual Info: Operating Specification of Inclinometer Demo Box July/29, 03 Note: This Demo can measure the angles in vertical plane only. 1, Real-time Angle Measuring Mode: Snap the switch to “ON", the system is turned on, You can measure the angle now. If you want to freeze the current display, press

Diode BAY 71

Abstract: Diode BAY 45 SFD43 Diode BAY 46 Diode BAY 88 BAW21 ESM 3070 1n 4009 diode BAY67 SFD49
Contextual Info: general purpose and switching diode selector guide guide de sélection diodes de com m utation et usage général th o m s o n -c s f Case \> F A V 200.225 mA 100.150 m A 50.90 m A 400 m A Vr ( V » \ 10 25 J €£043 1N456 1N 456 A W 449)1 1 30 rtm a a

Diode BAY 46

Abstract: 1N 4000 diode 1N3069 BA224-220 BAV45 BAY41 Diode BAY 41 Diode BAY 80 BAX12 SFD49
Contextual Info: general purpose and switching diode selector guide guide de sélection diodes de com m utation et usage général th o m so n -csf Case \> F A V 200.225 mA 100.150 mA 50.90 m A 400 m A Vr ( V » \ 10 J 1N 456 A €£043 1N456 25 W 449)11 rtm a a j

Contextual Info: ÛRAM1N9 M A M IN THIRD ANGLE PROJECTION T H I S DRAWING IS U N PU B LIS H E D . COPYRIGHT 19 RELEASED FOR PUBLICATION 0T AMP INCORPORATED. ALL INTERNATIONAL LOC ,1 9 OIST G M RIGHTS RESERVED. REVISIONS P F ZONE LTR c DATE DESCRIPTION REVISED S REORAMN PER 0720-0303-93

Diode BAY 46

Abstract: Diode BAY 80 Diode BAY 74 Diode BAY 45 Diode BAY 19 diode BAW55 BAY 73 diode 1N3595 Diode BAY 21 Diode BAY 41
Contextual Info: general purpose and switching diode selector guide guide de sélection diodes de commutation et usage général tho m so n -csf Case \> F A V 200.225 mA 100.150 m A 50.90 m A 400 m A Vr ( V » \ 10 J €£043 1N456 25 1N 456 A W 449)1 1 30 rtm a a

MBM29F200BA-90-X

Abstract: diode MARKING CODE A9 FPT-48P-M19 FPT-48P-M20 MBM29F200BA
Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-20838-1E FLASH MEMORY CMOS 2 M 256 K x 8/128 K × 16 BIT MBM29F200TA-90-X/-12-X/MBM29F200BA-90-X/-12-X • FEATURES • Single 5.0 V read, program, and erase Minimizes system level power requirements