BAY 17 DIODE Search Results

Diode BAY 21

Abstract: Diode BAY 46 ir 0588
Contextual Info: A E G 17 E CORP D aaa'mab 3 q q qt t s s BAY 135 TTIILIIMllfillKiKl electronic Creative Technologies 1 01 0 Silicon Planar Diode " - - ? Applications: Protection circuits, delay circuits Features: • Very low reverse current Dimensions in mm 9i io e Cathode

Diode BAY 55

Abstract: Diode BAY 88 Diode BAY 21 Diode BAY 45 BAY 88 diode BAY 87 diode U264 B u264 74345 BAV86
Contextual Info: BAY 86 * BAY 87 • BAY 88 Silizium-Diffusions-Dioden Silicon diffusion diodes Anwendungen: Allgemein Applications: General purposes Abmessungen in mm Dimensions in mm g 2,6 Absolute Grenzdaten Absolute maximum ratings Normgehäuse Case 5 1 A 2 DIN 41880 JEDEC DO 7

Diode BAY 54

Abstract: tfk 341 Diode BAY 74 TFK 68 diode Diode BAY 45 TFK 341 T 74340 TFK 101 bay 68 diode Diode BAY 68
Contextual Info: BAY 68 - BAY 69 Silizium-Epitaxial-Planar-Dioden Silicon epitaxial planar diodes Anwendungen: Sehr schnelle Schalter Applications: Very fast switches Abmessungen in mm Dimensions in mm 01.9 KATHODE CATHODE Normgehäuse Case 54 A 2 DIN 41880 JEDEC DO 35 Gewicht • Weight

Diode BAY 46

Abstract: 1N 4000 diode 1N3069 BA224-220 BAV45 BAY41 Diode BAY 41 Diode BAY 80 BAX12 SFD49
Contextual Info: general purpose and switching diode selector guide guide de sélection diodes de com m utation et usage général th o m so n -csf Case \> F A V 200.225 mA 100.150 mA 50.90 m A 400 m A Vr ( V » \ 10 J 1N 456 A €£043 1N456 25 W 449)11 rtm a a j

23J2

Abstract: BAW32D BAY18 1N484 1n484a 1N456 1N457 1N461 1N462 1N483
Contextual Info: silicon signal diodes diodes de signal au silicium Type vF / v r -v r m >o m ax V max (m A) general purpose m ax (V) THOMSON-CSF iF |r (mA) m ax (nA) / C Styp m ax (pF) Vr (V) Casa usage général Tam b = 25°C 1N456 1N 456 A 1N457 1N 457 A 1N461 25 25- 30

Diode BAY 46

Abstract: Diode BAY 45 Diode BAY 21 Diode BAY 80 Diode BAY 19 BAY 73 diode Diode BAY 41 Diode BAY 72 Diode BAY 42 bav 21 diode
Contextual Info: th o m so n -csf general purpose and switching diode selector guide guide de sélection diodes de com m utation et usage général Case \> F A V 200.225 m A 100.150 m A 50.90 m A 400 m A Vr( V » \ 10 25 €£043 1N456 J 1N 456 A W 449)1 1 30 rtm a a j

sy 170

Abstract: SY 356 SY 360 05 sy 710 sy 360 Dioden SY 250 byx 21 SY 320 sy710 Halbleiterbauelemente DDR
Contextual Info: FUNKAMATEUR-Bauelementeinformation VD Vergleichsliste für Dioden DDR/international D D R - Vergleichs­ Typ typ GA 100 G A 101 G A 102 GA 104 G A 105 GAY 61 GAY 64 SA 412 SA 415 SA 418 SAY 12 SAY 16 o SAY 17 SAY 18 SAY 20 SAY 30 SAY 32 SAY 40 SAY 42 SY 170

Diode BAY 46

Abstract: Diode BAY 80 Diode BAY 74 Diode BAY 45 Diode BAY 19 diode BAW55 BAY 73 diode 1N3595 Diode BAY 21 Diode BAY 41
Contextual Info: general purpose and switching diode selector guide guide de sélection diodes de commutation et usage général tho m so n -csf Case \> F A V 200.225 mA 100.150 m A 50.90 m A 400 m A Vr ( V » \ 10 J €£043 1N456 25 1N 456 A W 449)1 1 30 rtm a a

Diode BAY 19

Abstract: Diode BAY 21 Diode BAY 80 IR 10D DIODE Diode BAY 18 Diode BAY 45 Diode BAY 42 "BAY 21" BAY18 bay 17 diode
Contextual Info: Silicon Diodes Silicon Junction Diodes in DO-7 glass encapsulation fo r general a p p lica tio n s T yp e M a x im u m R a tin g s C h a ra c te ris tic s ia> @ @ @ T = 25 ° C amb = am° T 25 ° C Vp = U = 25 ° C @ 1 V VR = f = 10 V 0,5 M H z Q amb Vr V

Diode BAY 71

Abstract: Diode BAY 45 SFD43 Diode BAY 46 Diode BAY 88 BAW21 ESM 3070 1n 4009 diode BAY67 SFD49
Contextual Info: general purpose and switching diode selector guide guide de sélection diodes de com m utation et usage général th o m s o n -c s f Case \> F A V 200.225 mA 100.150 m A 50.90 m A 400 m A Vr ( V » \ 10 25 J €£043 1N456 1N 456 A W 449)1 1 30 rtm a a

Diode BAY 21

Abstract: Diode BAY 18 Diode BAY 32 Diode BAY 19 Diode BAY 12 Diode BAY 45 BAY46 BAW32B BAY18 BAW32D
Contextual Info: general purpose and sw itching diode selector guide guide de sélection diodes de commutation et usage général t h o m s o n -c s f Case \> F A V 200.225 m A 100.150 m A 50.90 m A 400 m A Vr ( V » \ 10 €£043 1N456 25 J 1N 456 A W 449)1 1 rtm a a j

Diode BAY 45

Abstract: Diode BAY 89 41880
Contextual Info: BAY 89 Silizium-Diffusions-Diode Silicon diffusion diode Anwendungen: Allgemein, für sehr hohe Betriebsspannungen Applications: General purpose, for very high supply voltages Normgehäuse Case 5 1 A 2 DIN 41880 JEDEG DO 7 Gewicht • Weight max. 0,2 g Abmessungen in mm

Diodes de redressement

Abstract: BAY21 BAY18 BOITIER MU86 f 1010 fr 608 TF80 650C RG606 fr 1004 diodes
Contextual Info: DIODES DE REDRESSEMENT RAPIDE fast recovery rectifier diodes VRWM 'FSM VF @ •f r m 10 ms •f m A (A) (V) vrmm TYPES 60 A / 'F (A) tease = 75°C •R G 6 0 2 F -R G 6 0 2 *RG 604 F - RG 604 •RG 606 F - RG 606 *RG 608 F - RG 608 *RG 610 F - RG 610 100 A

BA513

Abstract: BA521 BA517 BA543 BA521 diode BA523 BA531 BA519 BA533 BA544
Contextual Info: Silicijeve planarne signalne diode Silicon planar signal diodes Tip/Type I fav 1100M pri/at pri/at pri/at 1 MHz 25 °C i}*mb—25 °C 25°C Ur Ur=OV : mA " BA 511 BA 513 BA 517 BA 518 BA 519 BA 520 BA 521 BA 523 BA 531 BA 533 BA 543 BA 544 BA 545 BA 546

BA513

Abstract: iskra diode BA523 BA521 BA519 DIODE BA531 BA521 diode BA531 iskra BA533
Contextual Info: ISKRA ELECTRONICS INC SSE D • 4063477 Silicijeve planarne signalne diode Silicon planar signal diodes *'. lien Tip/Type BA 511 BA 513 BA 517 BA 518 BA 519 BA 520 BA 521 BA 523 BA 531 BA 533 BA 543 BA 544 BA 545 BA 546 BA 547 :io o m 1N4148 1N4448 1N4150

IR diodes TFK 4

Abstract: TTC 103 tfk bay 78 TFK diodes TTC 104 Diode BAY 80 4G75 BAY78 74343 diode s .* tfk
Contextual Info: BAY 78 Silizium-Epitaxial-Planar-Dioden-Quartett Silicon epitaxial planar diodes quad Anwendungen: Ringmodulatoren und Brückenschaltungen Applications: Ringmodulators and bridge circuits Abmessungen in mm Dimensions in mm 1 3 5 5_ -~r~ ?r 3 1 - 5 9,5 U — 9 .5 -»

Diode BAY 93

Contextual Info: BAY 93 'W Silizium-Epitaxial-Planar-Diode Silicon epitaxial planar diode Anwendungen: Sehr Schnelle Schalter Applications: Very fast switches Abmessungen in mm Dimensions In mm »’»• KATHODE 01,9 CATHODE 0 0 ,5 8 Normgehäuse Case 54 A 2 DIN 41880 JEDEC DO 35

KA 2418

Abstract: diode 3683 B431 B431AM B431AR B431AZ B431BR B431BZ B431CR B431CZ
Contextual Info: Bay Linear Inspire the Linear Power B431 2.5V Adjustable Shunt Regulator Description Features The Bay Linear B431 is a three terminal adjustable shunt regulator with thermal stability over Temperature range. Using two external resistors allows the output voltage to be adjusted

Contextual Info: Bay Linear Inspire the Linear Power B431 2.5V Adjustable Shunt Regulator Description Features The Bay Linear B431 is a three terminal adjustable shunt regulator with thermal stability over Temperature range. Using two external resistors allows the output voltage to be adjusted

B3431

Abstract: B3431AK3 B3431BK3 B3431CK3 LM3431 Diode BAY 80 Diode BAY 55
Contextual Info: Bay Linear Inspire the Linear Power B3431 Adjustable Shunt Regulator Description Features The Bay Linear B3431 is a three terminal adjustable shunt regulator with thermal stability over Temperature range. Using two external resistors allows the output voltage to be adjusted from 2.5V to 36V. With a sharp

ASCOM 48V 150A

Abstract: KS-20472-L1S ASCOM rectifier ED83119 ed83119-30 ED83246-30 KS-22089 KS-20472 h569-429 welding rectifier schematic
Contextual Info: Product Manual H569-429 Select Code 167-792-120 Comcode 107966541 Issue 2 June 1998 Lucent Technologies 600-Ampere, 140-Volt Galaxy Control and Distribution Bay for New and Retrofit 4ESS Applications Notice: Every effort was made to ensure that the information in this

HR433a

Abstract: KS-15544 L508 J85503C3 ks 15544 364A3 lineage 2000 KS-20472 KS-15544 KS-15544 L501 J85503C ks22010
Contextual Info: Lineage 2000 Battery Plant J85500A-2 Product Manual Select Code 167-790-032 Comcode 108190596 Issue 6 January 2008 Product Manual Select Code 167-790-032 Comcode 108190596 Issue 6 January 2008 Lineage® 2000 Battery Plant J85500A-2 Notice: The information, specifications, and procedures in this manual are

cqx 87

Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
Contextual Info: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157

364A3

Abstract: J85500A-2 J85500A2 lineage 2000 ecs lineage 2000 power plant ECS lucent 595B KS-15544 lineage 2000 KS-20472 J85503C LUCENT 50A RECTIFIER
Contextual Info: Lineage 2000 Battery Plant J85500A-2 Product Manual Select Code 167-790-032 Comcode 108190596 Issue 4 April 1999 1999 Lucent Technologies Product Manual Select Code 167-790-032 Comcode 108190596 Issue 4 April 1999 Lineage® 2000 Battery Plant J85500A-2