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    BC 187 NPN TRANSISTOR Search Results

    BC 187 NPN TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY Visit Rochester Electronics LLC Buy
    CA3046 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN Visit Rochester Electronics LLC Buy
    ISL73096EHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation

    BC 187 NPN TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    bc 540

    Abstract: TRANSISTOR BC 137 TRANSISTOR BC 187 transistor Bc 540 TRANSISTOR BC 136 bc 207 npn BC 677 bsv57b TRANSISTOR BD 187 BD 139 N
    Text: Power transistors for horizontal deflection output circuits Type Structure Fig. Nr. Characteristics Maximum ratings ptot at 'case = +90°c 7c :a v W A fj Notes at ^ CERM V M Hz rc mA ^ CEsat a / q and " F E V A BU 204 NPN 25 10.0 2.5 1300 7.5 100 S5 2.0 2.0


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    PDF BC1611) BCY58 BCY59 BD1361) BD436' BC432' BC547 bc 540 TRANSISTOR BC 137 TRANSISTOR BC 187 transistor Bc 540 TRANSISTOR BC 136 bc 207 npn BC 677 bsv57b TRANSISTOR BD 187 BD 139 N

    BC211

    Abstract: TR BC BC211A BC313A bc 313 iriver BC313 h21e deflexion NPN pnp MATCHED PAIRS
    Text: *B C 211 BC 211 A NPN SILICON TRANSISTORS, PLANAR TRANSISTORS NPN SILICIUM, PLANAR H5 Preferred device Dispositif recommandé The BC 211 and BC 211 A are intended for a iride variety of medium power medium speed witching and AF amplifier application ; they


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    SSY20

    Abstract: SF828 VEB mikroelektronik funkamateur BUX 127 SF126 SF 127 SF128 SF826 SF 829 B
    Text: FUNKAMATEUR-Bauelementeinformation DDR-SiliziumTransistoren Typenübersicht Si-Transistoren des VEB Kombinat Mikroelektronik Grenzdaten Zonen­ Vorzugs­ anwendungen2 folge P,o, [mW, W ] Typ1 Kenndaten UcBO U ceO T • T * 1C , ACsat [V] [V] [mA, (A)] fiT3


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    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


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    PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


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    BC211

    Abstract: BC313 BC 313 bc 374 BC313A NPN pnp MATCHED PAIRS h21e IT 313 TR BC transistor DA 313
    Text: *B C 313 BC 313 A PNP SILICON TRANSISTORS, PLANAR TRANSISTORS PNP S ILIC IU M , P LAN A R îfc Preferred device Dispositif recommandé The BC 313 and BC 313 A are intended for a wide variety of medium power medium speed switching and AF amplifier application ; they


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    F21E

    Abstract: transistors BC 848 ic 846 l transistors BC 183 Bc 188 pnp
    Text: SIEMENS NPN Silicon AF Transistors BC 846 . BC 850 Features • • • • • For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 856, BC 857,


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    PDF Q62702-C1772 Q62702-C1746 Q62702-C1884 Q62702-C1687 Q62702-C1715 Q62702-C1741 Q62702-C1704 Q62702-C1506 Q62702-C1727 Q62702-C1713 F21E transistors BC 848 ic 846 l transistors BC 183 Bc 188 pnp

    cqx 87

    Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
    Text: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157


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    PDF AA113 AA117 AA119 BAV17 BAV18 BAV19 BAV20 BAV21 cqx 87 germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175

    N2222

    Abstract: SL100B pnp SL100 SK100B SL100 npn NPN pnp MATCHED PAIRS 2n2905A 2N2219A BC188B SL100A N2222A NPN SL100
    Text: SILICON TRANSISTORS SEMICONDUCTORS Electrical Characteiistics At T j-2 5 'C Maximum Ratings TYPE NPN [PNP /2 N 3 7 0 1 /S N 4 0 3 0 /'SN 4031 /•'’2N4032 ^JN 4033 J3CY11S ''S K 1 0 0 •fS&lOOA ISKIOOB rSKlOOH 1J^K IO I '.SK 102 SL100 «* SL100A 3 SL100B


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    PDF Tj-25 Ta-26Â Tc-25 /2N3701 T0-18 N4030 2N4032 N4033 300jus O-105 N2222 SL100B pnp SL100 SK100B SL100 npn NPN pnp MATCHED PAIRS 2n2905A 2N2219A BC188B SL100A N2222A NPN SL100

    BEL 100N TRANSISTOR

    Abstract: bel 187 transistor PN3904 bel 188 transistor bel 187 transistor npn bel 187 BEL 100N bel 187 NPN TRANSISTOR bel 188 transistor pnp TRANSISTOR BC 187
    Text: VCE Si Device No VCEO VCBO Volts min V otts mm V eb o Volts min hFE at bias mm /max. Ic mA VcE V o lts 1 CM mA max P lo t mW max ICBO mA typ S at V otts typ pF typ ts ns typ N f <j B typ — — — TO 237 — — — TO 92 250 — — — TO 92 130 —


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    PDF 27min. 37min. 35friin. 50min 50min. 40min 40min. BEL 100N TRANSISTOR bel 187 transistor PN3904 bel 188 transistor bel 187 transistor npn bel 187 BEL 100N bel 187 NPN TRANSISTOR bel 188 transistor pnp TRANSISTOR BC 187

    BEL 100N TRANSISTOR

    Abstract: bel 187 transistor BEL 100p transistor bel 187 NPN TRANSISTOR transistor BEL 187 transistor bf 198 bel 188 transistor bel 100n transistor npn bel 188 transistor pnp BEL187
    Text: VCE Si Device No VCEO VCBO Volts min V otts mm V eb o Volts mm hFE at bias mm ^max. le mA VcE V o lts 1 CM mA max P lo t mW max ICBO mA typ S at V otts typ pF typ ts ns typ N f <j B typ — — — TO 237 — — — TO 92 250 — — — TO 92 130 — —


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    PDF 27min. 37min. 35friin. 50min 50min. 40min 40min. BEL 100N TRANSISTOR bel 187 transistor BEL 100p transistor bel 187 NPN TRANSISTOR transistor BEL 187 transistor bf 198 bel 188 transistor bel 100n transistor npn bel 188 transistor pnp BEL187

    SL100B

    Abstract: SL100 TRANSISTORS SL100A SL100 npn NPN SL100 BF107 SL100h N4030 N2222A sg103
    Text: SILICON TRANSISTORS SEMICONDUCTORS Electrical Characteiistics At T j-2 5 'C Maximum Ratings TYPE NPN [PNP /2 N 3 7 0 1 /S N 4 0 3 0 /'SN 4031 /•'’2N4032 ^JN 4033 J3CY11S ''S K 1 0 0 •fS&lOOA ISKIOOB rSKlOOH 1J^K IO I '.SK 102 SL100 «* SL100A 3 SL100B


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    PDF Tj-25 Ta-26Â To-25 /2N3701 T0-18 N4030 SN4031 2N4032 /2N4033 O-105 SL100B SL100 TRANSISTORS SL100A SL100 npn NPN SL100 BF107 SL100h N2222A sg103

    SL100B

    Abstract: SL100A BF107 SL100 npn N2222A 2N4032 N4030 SK100B SK102 SL100
    Text: SILICON TRANSISTORS SEMICONDUCTORS Electrical Characteiistics At T j-2 5 'C Maximum Ratings TYPE NPN [PNP /2 N 3 7 0 1 /S N 4 0 3 0 /'SN 4031 /•'’2N4032 ^JN 4033 J3CY11S ''S K 1 0 0 •fS&lOOA ISKIOOB rSKlOOH 1J^K IO I '.SK 102 SL100 «* SL100A 3 SL100B


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    PDF Tj-25 Ta-26Â To-25 /2N3701 N4030 SN4031 2N4032 /2N4033 O-220 O-106 SL100B SL100A BF107 SL100 npn N2222A SK100B SK102 SL100

    bel187

    Abstract: bel 187 transistor BEL 100N TRANSISTOR BEL188 transistor bel 187 bel 187 NPN TRANSISTOR bel 188 transistor BEL100N bel 187 transistor npn PN3904
    Text: BHARAT ELEK/SEHICOND DI 47E D • 1 4 3 5 3 ‘iä G O G G Q 1 G Tifi ■ B E LI I VCE Si Device No VCEO Volts min VCBO Volts mm V eb o Volts min hFE at b<as mm /max. Ic mA VCE Volts 1CM mA max P lo t mW ICBO nA max typ S a t V otts typ Cob ts p l- ns typ


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    PDF 27min. 37min. 35friin. 50min 50min. 40min 40min. bel187 bel 187 transistor BEL 100N TRANSISTOR BEL188 transistor bel 187 bel 187 NPN TRANSISTOR bel 188 transistor BEL100N bel 187 transistor npn PN3904

    BF 331 TRANSISTORS

    Abstract: transistor BC 331 transistor Bf 331 transistor BF 606 on TRANSISTOR BC 187 transistor marking p-6 BC 331 Transistor marking code SJ transistors bc238c
    Text: TELEFUNKEN ELECTRONIC Ö1C T> • Ö ^ O O R b 0005330 2 ■ ALlSG BFX89 TiHitPüUNliKiM] electronic T -sr-sr Creativo Technologies Silicon NPN Epitaxial Planar RF Transistor Applications: General, up to the GHz range Feature»: • Power gain 7 dB Dimensions In mm


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    PDF BFX89 569-GS BF 331 TRANSISTORS transistor BC 331 transistor Bf 331 transistor BF 606 on TRANSISTOR BC 187 transistor marking p-6 BC 331 Transistor marking code SJ transistors bc238c

    LDR 03

    Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
    Text: Halbleiter­ bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren


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    bpx28

    Abstract: Germanium diode OA 182 TAA920 fy sot 143 BSV57B AC187K BPW14 BF194 AD 161 BPX34
    Text: Halbleiter TELE FUN KEN Übersicht Sem iconductor survey 1972/1973 B2/V.3.20/0872 D ie s e Liste soll die W ahl g ee ig n e te r H albleiter-Typen fü r die verschiedenen A n w en du ng szw ecke e rleich te rn . Z ur besseren Ü b e rs ic h t sind nur die w e se ntlich en D aten


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    3866S

    Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM
    Text: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM


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    catalogue des transistors bipolaires de puissance

    Abstract: brochage des circuits integres H3C1-07 LB 124 transistor equivalente transistor A2222 equivalent of transistor bc212 bc 214 BFw-11 terminals SESCOSEM transistor equivalente transistor BC 141 Brochage BCW91
    Text: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM


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    TRANSISTOR BI 187

    Abstract: sot-23 npn marking code cr TRANSISTOR BC 187 BUV71 bc 187 npn transistor TRANSISTOR BI 237 on BC 187 TRANSISTOR telefunken ta 750 12A3 T0126
    Text: L 1 TELEFUNKEN ELECTRONIC 17E D • ô'téOO'ib 000*5571 0 . BUV71 m S F M IM electronic CrMiiwltchnofogw» T-S3-J3 Silicon NPN Power Transistors Applicâtions: Motor controls, switching mode power supplies Features: • Implantation • High reverse voltage


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    PDF BUV71 T0126 15A3DIN TRANSISTOR BI 187 sot-23 npn marking code cr TRANSISTOR BC 187 BUV71 bc 187 npn transistor TRANSISTOR BI 237 on BC 187 TRANSISTOR telefunken ta 750 12A3 T0126

    APC UPS CIRCUIT DIAGRAM rs 1500

    Abstract: APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM schematic diagram APC back ups XS 1000 TAA550 APC UPS CIRCUIT DIAGRAM UPS APC rs 1000 CIRCUIT diagram UPS APC rs 800 CIRCUIT diagram APC Back ES 500 UPS circuit diagram CIRCUIT DIAGRAM APC UPS 700
    Text: 1 2 AF106 G E R M A N IU M MESA PNP VHF MIXER/OSCILLATOR The AF 106 is a germanium mesa PNP transistor in a Jedec TO-72 metal case. It Is particularly designed for use as preamplifier mixer and oscillator up to 260 MHz. ABSOLUTE MAXIMUM RATINGS ^CBO VcEO ^EBO


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    PDF AF106 AF106 APC UPS CIRCUIT DIAGRAM rs 1500 APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM schematic diagram APC back ups XS 1000 TAA550 APC UPS CIRCUIT DIAGRAM UPS APC rs 1000 CIRCUIT diagram UPS APC rs 800 CIRCUIT diagram APC Back ES 500 UPS circuit diagram CIRCUIT DIAGRAM APC UPS 700

    TRIAC 97A6

    Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
    Text: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1


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    PDF OD-80 OD-323 OT-23 OT-89 OT-143 OT-223 OT-323 TRIAC 97A6 S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C

    TIS43

    Abstract: equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent
    Text: The Transistor and Diode Data Book for Design Engineers Volume II Northern European Edition IMPORTANT NOTICES Texas Instrum ents Ltd ., reserves the rig h t to make changes at any tim e in order to improve design and to supply the best p ro d u c t possible.


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    PDF 2S301 BS9300-C-598 2S305 BS9300-C-366 2S307 2S322 CV7396 BS9300-C-396 CV7647 BS9300-C-647 TIS43 equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


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    PDF 11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680