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    BC 440-6 TRANSISTOR Search Results

    BC 440-6 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    BC 440-6 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistors BC 639 029

    Abstract: BC368N mpsa 46 MPSA 506 transistor 42BA-3 SBC337
    Text: Selection Guide Diodes leaded For complete information and data sheets please refer to our Data Book I and II, Small Signal Semiconductor Edition 03.92. RF-Schottky Diodes for Professional Applications Type Frequency Band GHz Maximum Ratings Characteristics (TA = 25 °C)


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    PDF O-92d transistors BC 639 029 BC368N mpsa 46 MPSA 506 transistor 42BA-3 SBC337

    transistor BC 552

    Abstract: 320 265v PTH8L Thermistor PTC 265V TRANSISTOR BC 553 PTGL05AR151H8P52BO 265V PTC transistor BC 185 transistor bd 180 PTH8L07
    Text: THERMISTOR PRODUCTS PTC THERMISTOR FOR CIRCUIT PROTECTION PTGL/PTH8L Series Posistor protects circuit components at the load and power supply sides by reducing the current when abnormal current flows through the circuit. FEATURES • Posistor ® continues to protect a circuit until the abnormal


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    PDF CG01-J transistor BC 552 320 265v PTH8L Thermistor PTC 265V TRANSISTOR BC 553 PTGL05AR151H8P52BO 265V PTC transistor BC 185 transistor bd 180 PTH8L07

    bc441

    Abstract: BC461
    Text: BC 440 SILICON P L A N A R NPN B C 441 MEDIUM POWER AMPLIFIER The metal BC 440 and case. They BC 441 are are silicon intended for planar epitaxial NPN general purpose applications, transistors in TO-39 especially for driver stages. The complementary P N P types are respectively the BC 460 and BC461.


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    PDF BC461. bc441 BC461

    BC441

    Abstract: 100T2 BC461
    Text: BC 440 BC 441 S IL IC O N PLANAR NPN MEDIUM POWER AMPLIFIER The BC 440 and metal case. They BC: 441 are are silicon intended planar epitaxial fo r general purpose NPN transistors applications, in TO-39 especially for driver stages. The com plem entary FNP types are respectively the BC 460 and BC461.


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    PDF BC461. 100t2) Tcase-25Â BC441 100T2 BC461

    cqx 87

    Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
    Text: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157


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    PDF AA113 AA117 AA119 BAV17 BAV18 BAV19 BAV20 BAV21 cqx 87 germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175

    BC441

    Abstract: j237 BES100 BC461 bc440
    Text: 30E D fr z ^7# • 7 1 2 tJ237 O G S Q T Q ^ 2 ■ S G S -T H O M S O N f^iii gm[i[iii(gf^(5 ^n(g^ BC440 BC441 S G S-THOMSON MEDIUM POWER AMPLIFIER DESCRIPTION The BC440 and BC441 are silicon planar epitaxial NPN transistors in TO-39 metal case. They are in­


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    PDF BC440 BC441 BC441 BC460 BC461. j237 BES100 BC461

    bc 540

    Abstract: TRANSISTOR BC 137 TRANSISTOR BC 187 transistor Bc 540 TRANSISTOR BC 136 bc 207 npn BC 677 bsv57b TRANSISTOR BD 187 BD 139 N
    Text: Power transistors for horizontal deflection output circuits Type Structure Fig. Nr. Characteristics Maximum ratings ptot at 'case = +90°c 7c :a v W A fj Notes at ^ CERM V M Hz rc mA ^ CEsat a / q and " F E V A BU 204 NPN 25 10.0 2.5 1300 7.5 100 S5 2.0 2.0


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    PDF BC1611) BCY58 BCY59 BD1361) BD436' BC432' BC547 bc 540 TRANSISTOR BC 137 TRANSISTOR BC 187 transistor Bc 540 TRANSISTOR BC 136 bc 207 npn BC 677 bsv57b TRANSISTOR BD 187 BD 139 N

    BC461

    Abstract: JCASE BC441
    Text: BC 394 THERMAL DATA The rm a l resistance ¡u n ctio n -ca se The rm a l resistance ju n c tio n -a m b ie n t V BR CBO C o lle cto r-b a se b re a kd o w n voltage 0e =0) l c = 100 V CEO (sus)* C o lle c to r-e m itte r sustaining voltage Ob = 0 ) V(BR)EBO E m itte r-b a se


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    BC441

    Abstract: bc460 transistor bc 102 bc 103
    Text: BC 460 BC 461 SI L I CON P L A N A R PNP MEDIUM POWER AMPLIFIER The BC 460 and metal case. They BC 461 are are silicon intended for planar epitaxial PNP general purpose applications, transistors iri TO-39 especially for driver stages. The com plem entary NPN types are respectively the BC 440 and BC441.


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    PDF BC441. BC441 bc460 transistor bc 102 bc 103

    transistor Bc 230

    Abstract: bc393 bc 393
    Text: BC 393 SILICON PLANAR PNP HIGH VOLTAGE A M PLIFIER The BC 393 is a silicon planar epitaxial PNP transistor in Jedec: T O -1 8 metal case, designed fo r general purpose high-voltage arid video am plifier applications. The com plementary NPN type is the BC 394.


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    PDF -100V -10MA transistor Bc 230 bc393 bc 393

    BC 2219a

    Abstract: BFX48 transistor 3504 npn 2N3108 2N3109 BFY50 BFY51 BFY56A
    Text: ¿ 7 7 SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL ^ 7# M M I & J O T « ! SMALL SIGNAL TRANSISTORS NPN GENERAL PURPOSE TRANSISTORS - TO 39 v CEO V C ER* h FE m in/m ax 3> <C Type mA (V) v CE(sat) m ax Ï ic (mA) (V) Pfot «T min ‘ off* (M H z) (ns) (m W )


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    PDF BFY51 BFY50 BFY56A BFX48 BC 2219a transistor 3504 npn 2N3108 2N3109

    transistor bc 100

    Abstract: BC215 BC 215
    Text: BC 215 B NP SILICON TRANSISTOR, EP ITAXIAL PLANAR RANSISTOR PNP SILIC IU M , PLAN A R E P IT A X IA L ha PNP planar épitaxial BC 215 B is intended ar général purpose ? transistor PNP planar BC 215 B est destiné aux •âges généraux CD >° -5 0 V —500 mA


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    bc 192

    Abstract: BSX41 2904 BSW72 2905 2907 BSX40 N2905 BSW75
    Text: PNP Silicon Transistors PNP Silicon Epitaxial Planar Transistors lc = 500m A in T O -1 8 and T O -3 9 ( « T O - 5 ) metal ca s e s for high speed sw itch ing Type M a x im u m R a t in g s C h a r a c t e r is t ic s a t T amb = 25 ° C E J3 li h-°


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    PDF 500mA) BSW72 BSX40 bc 192 BSX41 2904 2905 2907 N2905 BSW75

    APC UPS CIRCUIT DIAGRAM rs 1500

    Abstract: APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM schematic diagram APC back ups XS 1000 TAA550 APC UPS CIRCUIT DIAGRAM UPS APC rs 1000 CIRCUIT diagram UPS APC rs 800 CIRCUIT diagram APC Back ES 500 UPS circuit diagram CIRCUIT DIAGRAM APC UPS 700
    Text: 1 2 AF106 G E R M A N IU M MESA PNP VHF MIXER/OSCILLATOR The AF 106 is a germanium mesa PNP transistor in a Jedec TO-72 metal case. It Is particularly designed for use as preamplifier mixer and oscillator up to 260 MHz. ABSOLUTE MAXIMUM RATINGS ^CBO VcEO ^EBO


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    PDF AF106 AF106 APC UPS CIRCUIT DIAGRAM rs 1500 APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM schematic diagram APC back ups XS 1000 TAA550 APC UPS CIRCUIT DIAGRAM UPS APC rs 1000 CIRCUIT diagram UPS APC rs 800 CIRCUIT diagram APC Back ES 500 UPS circuit diagram CIRCUIT DIAGRAM APC UPS 700

    TRANSISTOR BC 534

    Abstract: transistor bc 537 TR BC 237 B transistor bc 488 transistor 537 b 360 transistor bc 630 transistor BC682 TRANSISTOR BC 431 BC526 BC682
    Text: fia DE|b[m?flfl OODDbSb ‘ï I 6091788 MICRO ELECTRONIC S C O R P - — Û2D 00656 D TYPE NO. V CE SAT H lFE CASE Pd ImW) 'c (A) V CEO (V) *T min Cob COMPLE­ max max M EN TARY (Vi 'c max *C (mA) V CE min (V) (A) (MHz) (pF) TYPE 432 440 441 445 446 P


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    PDF O-92F 10CKD to-02 melf-002. melf-006 to-237 MT-12 Sto/s-20 TRANSISTOR BC 534 transistor bc 537 TR BC 237 B transistor bc 488 transistor 537 b 360 transistor bc 630 transistor BC682 TRANSISTOR BC 431 BC526 BC682

    ScansUX56

    Abstract: No abstract text available
    Text: BC 394 SILICON PLANAR NPN HIGH V O L T A G E A M P L IF IE R The B C 3 9 4 is a silicon planar epitaxial N P N transistor in Jedec: T O - 1 8 metal case, designed for general purp ose high-volta ge and vide o am plifier applications. T h e com p lem entary P N P type is the B C 393.


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    transistor Bc 230

    Abstract: BC393
    Text: BC 393 SILICON PLANAR PNP HIGH V O L T A G E A M P L IF IE R The B C 3 9 3 is a silicon planar epitaxial P N P transistor in Jedec T O - 1 8 metal case, designed for general p urpose h igh-volta ge and vide o am plifier applications. T h e com p lem entary N P N type is the B C 394.


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    PDF -100V transistor Bc 230 BC393

    PU3127

    Abstract: PU4127 00J0
    Text: Power Transistor Arrays PU3127, PU4127 PU3127, PU 4127 Package D im ensions P U 3127 Um t:m m Silicon NPN Triple-Diffused Planar Type J il" ? Pow er A m plifier, S w itching — TdT • Features • H igh D C c u r re n t gain 4.2max. 20. 5max. 08 + 0 X 0.5 = 015


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    PDF PU3127, PU4127 PU3127: PU4127: PU3127 PU3127 PU4127 00J0

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


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    2sd 5023

    Abstract: transistor BC 945 2SC 9012 bc 9013 transistor bc 855 9416A Transistor BC345 BFY41 bcx 388 BC 945
    Text: SEMICONDUCTORS INC OTE D | fil3t.t,5Q □D0Q2C12 7 | T TYPE NO. POLARITY Medium Power Transistors MAXIMUM RATINGS CASE Pd mW HFE •c (A) VCEO IV) min 40 35 40 40 40 VCE(SAT) max ■c (A) (VÏ COMPLE­ MENTARY TYPE *T min (MHz) Cob max (pF) 0.15 1 0.3 1


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    PDF -26UNF-2A O-48D 2sd 5023 transistor BC 945 2SC 9012 bc 9013 transistor bc 855 9416A Transistor BC345 BFY41 bcx 388 BC 945

    2sd 5023

    Abstract: bc 9013 bc 9013 g 2SC 9012 2218A cs9012 BC526 transistor BC 945 BC287 Transistor BC345
    Text: SEMICONDUCTORS INC OTE D | fil3t.t,5Q □D0Q2C12 7 | T TYPE NO. POLARITY Medium Power Transistors MAXIMUM RATINGS CASE Pd mW HFE ic (A) VCEO IV) min max 40 35 40 40 40 120 VCE(SAT) max (A) (Vï COMPLE­ MENTARY TYPE *T min (MHz) Cob max (pF) 0.15 1 0.3 1


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    PDF 13LLSD to-39 2sd 5023 bc 9013 bc 9013 g 2SC 9012 2218A cs9012 BC526 transistor BC 945 BC287 Transistor BC345

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


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    PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643

    bpx28

    Abstract: Germanium diode OA 182 TAA920 fy sot 143 BSV57B AC187K BPW14 BF194 AD 161 BPX34
    Text: Halbleiter TELE FUN KEN Übersicht Sem iconductor survey 1972/1973 B2/V.3.20/0872 D ie s e Liste soll die W ahl g ee ig n e te r H albleiter-Typen fü r die verschiedenen A n w en du ng szw ecke e rleich te rn . Z ur besseren Ü b e rs ic h t sind nur die w e se ntlich en D aten


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    transistor vergleichsliste

    Abstract: Transistor Vergleichsliste DDR telefunken transistoren VALVO BSW69 vergleichsliste DDR vergleichsliste transistor BC-148 rft transistoren Transistoren DDR
    Text: TRANSISTOR VERGLEICHSLISTE Teil 2: Siliziumtransistoren r a d io - t e le v is io n Transistorverglèich& liste T eil 2 : S iliziu in tra n sistoren TRA N SISTO R, V ER G LEICH S LIS T E Teil 2: Siliziumtransistoren DER D EU TSCH EN M IL IT Ä R V E R L A G


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