BC 548 B 15 Search Results

T092A

Abstract: transistors BC 459
Contextual Info: SIGNAL TYPES ptot * T Y P E NPN BC 170 BC 171 BC 172 BC 173 BC 174 BC 237 BC 238 PNP (W) 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 B C £39 BC BC BC BC BC BC BC 413 414 546 547 548 549 550 BC BC BC BC BC

BC547

Abstract: BC547 MOTOROLA transistor BC 547B BC548C MOTOROLA BC546B MOTOROLA BC547 application notes bc 548b transistor BC548 bc546 motorola Datasheet of bc 547 b
Contextual Info: MOTOROLA Order this document by BC546/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC546, B NPN Silicon BC547, A, B, C BC548, A, B, C COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Symbol BC 546 BC 547 BC 548 Unit Collector – Emitter Voltage VCEO

transistor vc 548

Abstract: Transistor Bc54
Contextual Info: SyrnSEMi SYM5EMI SEMICONDUCTOR BC 546, A, BC 547 A, BC 548, A, T O -92 B, C B, C B, C Plastic Encapsulate Transistors TRANSISTOR NPN TO — 92 FEATURES Power dissipation (Tamb=25 °C ) PCM : 0.625 W Collector current 1cm : 0.1 A Collector base voltage 1. COLLECTOR

BC547 MOTOROLA

Abstract: BC547
Contextual Info: MOTOROLA Order this document by BC546/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC546, B NPN Silicon BC547, A, B, C BC548, A, B, C COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Symbol BC 546 BC 547 BC 548 Unit Collector – Emitter Voltage VCEO

BC547 MOTOROLA

Abstract: Motorola transistors - bc548 BC547 bc546 motorola BC 548B BC548 BC547 w 2 d T BC548 BC546A BC546
Contextual Info: BC546, A, B BC547, A, B, C BC548, A, B, C M AXIM UM R A T IN G S R a tin g Sym bol BC BC BC 546 547 548 U n it C o ile c to r-E m itte r V o lta g e VCEO 65 45 30 Vdc C o lle c to r-B a s e V o lta g e VCBO 80 50 30 Vdc l:m itte r-B a s e V o ltage ^E B O

c547a

Abstract: C548A C546A C548 HE bc548 BC 548B BC 547 data base BC547 motorola C 547 BC548
Contextual Info: BC546, A, B BC547, A, B, C BC548, A, B, C MAXIMUM RATINGS Rating Sym bol BC BC BC 546 547 548 Unit C o lle c to r- E m itte r V o lta g e VCEO 65 45 30 Vdc C o lle c to r-B a s e V o ita g e VC BO 80 50 30 Vdc E m itte r-B a s e V o lta g e VEBO 6 .0 Vdc C o lle c to r C u rre n t - C o n tin u o u s

BC550

Abstract: ic 548 CBC549 C 548 B BC550C BC549B transistors BC 548 BC 558 bc548b bc557 bc547b
Contextual Info: SIEMENS SIE » • ßS3Sfc.05 GG41b0fl 7ST « S I E G S I E M EN S A K T I E N 6 E S E L L S C H A F "F Z ? *-2 ./ NPN Silicon AF Transistors • • • • BC546 BC550 High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz

BF-139

Abstract: bf139 transistors BC 549 transistors TO-92 case bc bc 540 BC211 8C547 J BC211 CL16F CTO-92
Contextual Info: S ilic o n N P N transistors, general purpose continued Tam b- 25 °C Transistors N P N silicium , usage généra! (suite) tS v CEO (V) h2 ie (V) ic / 'b max ImA) max ImA) min 40 250 150 1 1000/100 300 § 341 40 250 150 1 1000/100 300 § 341 45 110 240 2

C 548 B

Abstract: B549C BC650 C 547 B TRANSISTOR BC650 transistor bc 549 equivalent transistor C 548 B C547B TRANSISTOR BC 550 c transistor c 548
Contextual Info: asc D • fi 23S hü S Q Q Q m S Q T M S I E G _ T - 2~ 9 ~ Z / NPN Silicon Transistors BC 546 - BC 550 SIEMENS AKTIENGESELLSCHAF . 25C 04190 D - BC 546, BC 547, BC 548, BC 549 and BC 550 are epitaxial NPN silicon planar transistors in TO 92 plastic packages 10 A 3 DIN 41868 . They are intended for use in AF input and

Transistor - BC 547, CL 100

Abstract: bc 104 npn transistor transistor C 548 B bc 408 equivalent BC548BC bc 558 equivalent bc 103 transistor c 548 equivalent of BC 399 NPN Transistor TRANSISTOR C 557 B
Contextual Info: BC546*BC 547 *BC 548 *BC549. BC 550 NPN S IL IC O N TR A N S IS T O R T R A N S IS T O R N P N S IL IC IU M Compì, of BC 556 at 560 Preferred device D is p o s itif recommandé General purpose BC 546/BC 547/BC 548 Usage général BC 546/BC 547/BC 548 Low noise BC 549/BC 550

transistor 2sc 548

Abstract: equivalent transistor bc 649 BC548BC BC660 2sC 548 B Bc 648 Bc 649 transistor bc 647 BC5481 BC649
Contextual Info: asc D • asBSbos o o o m io T M S IE G NPN Silicon Transistors BC 546 - BC 550 SIEMENS AKTIENÛESELLSCHAF . 25C 04190 D - BC 546, BC 547, BC 548, BC 549 and BC 55 0 are epitaxial NPN silicon planar transistors in TO 92 plastic packages 10 A 3 DIN 41868 . They are intended for use in AF input and

C 547 C

Abstract: C 548 B C 547 B ic 548 bc 547 Transistors bc 548 BC 546 BC548 BC 548 bc 548 B 15
Contextual Info: BC 546 • BC 547 • BC 548 Silizium-NPN-Epitaxial-Planar-NF-Transistoren Silicon NPN Epitaxial Planar AF Transistors Anwendung: Vor- und Treiberstufen Application: Pre and d river stages Besondere Merkmale: Features: • Verlustleistung 500 mW • Power dissipation 500 m W

bc 103 transistor

Abstract: bc 106 transistor transistor BC 549 transistor bc 103 bc 104 npn transistor transistor bc 102 transistor c 548 of bc 547 b transistor bc 546 transistor Bc 580
Contextual Info: HN / BC 546.549 NPN Silicon Expitaxial Planar Transistor These transistors are subdivided into three groups A, B and C according to their current gain. The type BC546 is available in groups A and B, however, the types BC547 and BC548 can be supplied in all three groups. The BC549

transistor bc 488

Abstract: transistor bc 557 c bc 547 b transistor TRANSISTOR C 557 B TRANSISTOR BC 550 b transistor BC 490 C 547 B pin configuration bc 547 transistor transistor BC 557 transistor C 548 B
Contextual Info: t h o m s o n -c s f general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PNP NPN PNP NPN 0,8.1 A 0,4.0,6 A «0,2 A PNP v CEO 20 V B Ç 2 3 8 .

transistor C 548 B

Abstract: transistor c 548 BC547 bc548 transistor 547 TRANSISTOR bc546 fairchild transistor b 548 transistor bc547 transistor 547 b C 548 B
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR BC546/547/548/549/550 SWITCHING AND AMPLIFIER • HIGH VO LTAG E: BC546, VCeo=65V • LO W NOISE: BC549, BC550 • C om plem ent to BC556 . BC560 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector Base Voltage

ic 546

Abstract: 549B 546b transistors BC 548C ic 548 transistors 547C transistors BC 546 B bc 548b bc 104 npn transistor bc 547b
Contextual Info: BC 546 . BC 549 NPN General Purpose Transistors Si-Epitaxial PlanarTransistors NPN Power dissipation – Verlustleistung 500 mW Plastic case Kunststoffgehäuse TO-92 10D3 Weight approx. – Gewicht ca. 0.18 g Plastic material has UL classification 94V-0

BC 546 BP

Abstract: bc 547 bp transistors BC 548 BC 558 PNP 337A1 3001 pnp BC 557 npn tr bc 337 transistors BC 487 transistors BC 548 BC 558 33740
Contextual Info: general purpose transistors — plastic case O transistors usage général — boîtier plastique Type NPN M axim um ratings PNP pto t v CEO mW (V) 45 Characteristics a t 25°C h 2lE min N N N N N N N N N N BC 317 BC 317 A BC 317 B BC 320 BC 320 A BC 320 B

Contextual Info: BC 546 . BC 549 NPN Silicon Epitaxial PlanarTransistors NPN Power dissipation – Verlustleistung 500 mW Plastic case Kunststoffgehäuse TO-92 10D3 Weight approx. – Gewicht ca. 0.18 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert

BC 547 data base

Abstract: BC 548C
Contextual Info: BC 546 . BC 549 NPN Silicon Epitaxial PlanarTransistors NPN Power dissipation – Verlustleistung 500 mW Plastic case Kunststoffgehäuse TO-92 10D3 Weight approx. – Gewicht ca. 0.18 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert

transistor C 548 B

Abstract: TR BC 548 transistor c 548
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR BC546/547/548/549/550 SWITCHING AND AF AMPLIFIER • HIGH VOLTAGE: BC546, VOEo =65V • LOW NOISE: BC549, BC550 • Complement to BCS56 . BC 560 ABSOLUTE MAXIMUM RATINGS Ta=25°C Symbol Characteristic Collector Base Voltage

transistor vc 548

Abstract: 547 transistor BC546.547 transistor c 548 transistor NPN 548 transistor C 548 B transistor C 547 TRANSISTOR BC 550 b transistor b 548 transistor c 548 c
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR BC546/547/548/549/550 SWITCHING AND AF AMPLIFIER • HIGH VOLTAGE: BC546, VCEO= 6 5 V • LOW NOISE: BC549, BC550 • Com plem ent to BC556 . BC 560 ABSOLUTE MAXIMUM RATINGS Ta=25°C Symbol Characteristic Collector Base Voltage

Contextual Info: PRO ELECTRON SERIES USE TYPE Pc Tj mA (mW) fC ) GENERAL PURPOSE *BC 167 45 100 300 150 GENERAL PURPOSE *BC 168 20 100 300 LOW NOISE *BC 169 20 50 300 GENERAL PURPOSE BC 237 45 100 300 h FE VCE (V) ic (mA) 1 Î0 -4 6 0 5 ISO 120-800 5 2 150 180-800 5 2 150

ic 558

Abstract: ic 556 transistors BC 548 BC 558 ic 556 specifications BC557 BC558 556 driver BC558 driver bc 558 transistors BC 548 BC 558 PNP
Contextual Info: BC 556 • BC 557 • BC 558 Silizium-PNP-Epitaxial-Planar-NF-Transistoren Silicon PNP Epitaxial Planar AF Transistors Anwendung: Vor- und Treiberstufen Applications: Pre and driver stages Besondere Merkmale: Features: • Verlustleistung 500 mW • Power dissipation 500 m W

bc 339

Abstract: bc560 bc558c cbc560 bc557 bc560c ic 556 BC556A AMI siemens BC557B
Contextual Info: SIE D SIEM ENS • fl235b05 O O m b l b ÔTb « S I E G SIEMENS AKTIENGESELLSCHAF T v fl- Z l PNP Silicon AF Transistors • • • • BC 556 . BC560 High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 546, BC 547,