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    BC109C TRANSISTOR Search Results

    BC109C TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    BC109C TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BC109C Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)30 I(C) Max. (A)200m Absolute Max. Power Diss. (W)600m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)15nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF BC109C Freq150M

    bc108b

    Abstract: bc109c bc107 Transistor BC107 NPN BC108B transistor transistor bc107b for transistor bc107 bc109 Transistor BC109 BC107B
    Text: BC107,A,B BC108B,C BC109B,C NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BC107, BC108, BC109 series types are small signal NPN silicon transistors, manufactured by the epitaxial planar process, designed for general purpose amplifier


    Original     		PDF BC107 BC108B BC109B BC107, BC108, BC109 BC107) BC107A) BC107B, bc109c Transistor BC107 NPN BC108B transistor transistor bc107b for transistor bc107 Transistor BC109 BC107B

    TRANSISTOR bc108

    Abstract: BC107 Transistor application notes transistor BC107 specifications BC109c transistor Transistor BC107 BC109C BC107A Transistor BC109 BC108 applications of Transistor BC108
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D125 BC107; BC108; BC109 NPN general purpose transistors Product specification Supersedes data of 1997 May 01 File under Discrete Semiconductors, SC04 1997 Jun 03 Philips Semiconductors Product specification NPN general purpose transistors


    Original     		PDF M3D125 BC107; BC108; BC109 BC177, BC178 BC179. TRANSISTOR bc108 BC107 Transistor application notes transistor BC107 specifications BC109c transistor Transistor BC107 BC109C BC107A Transistor BC109 BC108 applications of Transistor BC108

    transistor BC107 specifications

    Abstract: BC107 Transistor application notes TRANSISTOR bc108 Transistor BC107 TRANSISTOR DATASHEET BC107B BC109c TRANSISTOR bc107 current gain BC107 equivalent transistors DATASHEET Transistor BC109 symbol transistor BC108
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D125 BC107; BC108; BC109 NPN general purpose transistors Product specification Supersedes data of 1997 Jun 03 File under Discrete Semiconductors, SC04 1997 Sep 03 Philips Semiconductors Product specification NPN general purpose transistors


    Original     		PDF M3D125 BC107; BC108; BC109 BC177. MAM264 SCA55 transistor BC107 specifications BC107 Transistor application notes TRANSISTOR bc108 Transistor BC107 TRANSISTOR DATASHEET BC107B BC109c TRANSISTOR bc107 current gain BC107 equivalent transistors DATASHEET Transistor BC109 symbol transistor BC108

    bc109b datasheet

    Abstract: BC337 BC547 bc237 bc546 bc108 TO-92 bc108b equivalent bc546 equivalent BC109B equivalent 2PC945K BC108 to92 2PC945P
    Text: Philips Semiconductors Small-signal Transistors Selection guide LEADED DEVICES NPN GENERAL PURPOSE LOW-POWER TRANSISTORS TYPE NUMBER PACKAGE VCEO max. V IC max. (mA) Ptot max. (mW) hFE min. hFE max. fT min. (MHz) 800 60 2N2484 TO-18 60 50 360 250 2N4124


    Original     		PDF 2N2484 2N4124 2N5088 2PC945 2PC945K 2PC945P 2PC945Q 2PC1815 2PC1815BL 2PC1815GR bc109b datasheet BC337 BC547 bc237 bc546 bc108 TO-92 bc108b equivalent bc546 equivalent BC109B equivalent 2PC945K BC108 to92 2PC945P

    BC109 pin configuration

    Abstract: BC109C pin configuration bc109 transistor BC109 BC109C BC109C datasheet DATASHEET Transistor BC109 BC109c transistor datasheet BC109B 30Hz
    Text: BC109 Series Low Power Bipolar Transistors Feature: • NPN Silicon Planar Epitaxial Transistors. TO-18 Metal Can Package Dimensions Minimum Maximum A 5.24 5.84 B 4.52 4.97 C 4.31 5.33 D 0.40 0.53 E - 0.76 F - 1.27 G - 2.97 H 0.91 1.17 J 0.71 1.21 K 12.70


    Original     		PDF BC109 BC109 BC109 pin configuration BC109C pin configuration transistor BC109 BC109C BC109C datasheet DATASHEET Transistor BC109 BC109c transistor datasheet BC109B 30Hz

    BC107 pin configuration

    Abstract: BC109 pin configuration BC109 BC109C pin configuration BC108 BC107 pin BC108 pin configuration bc107a pin out DATASHEET Transistor BC109 BC107
    Text: BC107/ BC108/ BC109 Low Power Bipolar Transistors TO-18 Features: NPN Silicon Planar Epitaxial Transistors. Suitable for applications requiring low noise and good hFE linearity, eg. audio pre-amplifiers, and instrumentation. TO-18 Metal Can Package Dimension


    Original     		PDF BC107/ BC108/ BC109 BC107 BC108 BC109 BC107 pin configuration BC109 pin configuration BC109C pin configuration BC107 pin BC108 pin configuration bc107a pin out DATASHEET Transistor BC109

    bc109c

    Abstract: BC107 characteristic BC109C MOTOROLA bc108b BC107A TR BC c108b 109C
    Text: BC107, A, B thru BC109C M A XIM U M RATINGS Rating C o lle c to r-E m itte r V o lta g e Symbol BC 107 BC 108 BC 109C Unit v CEO 45 25 25 V dc C o lle c to r-B a s e V olta g e v CBO 50 30 30 Vdc E m itte r-B a s e V olta g e v EBO 6 5 5 C o lle c to r C u rre n t — C o n tin u o u s


    OCR Scan     		PDF BC107, BC109C bc109c BC107 characteristic BC109C MOTOROLA bc108b BC107A TR BC c108b 109C

    TRANSISTOR bc107 current gain

    Abstract: bc107a bc109 bc109c BC108B bc108a bc108c BC107B transistor TO-92 bc108 transistor bc107b
    Text: Philips Semiconductors Product specification NPN general purpose transistors BC107; BC108; BC109 FEATURES PINNING • Low current max. 100 mA PIN • Low voltage (max. 45 V). 1 APPLICATIONS DESCRIPTION emitter 2 base 3 collector, connected to the case • General purpose switching and amplification.


    OCR Scan     		PDF BC177. BC107; BC108; BC109 BC107 BC109 TRANSISTOR bc107 current gain bc107a bc109c BC108B bc108a bc108c BC107B transistor TO-92 bc108 transistor bc107b

    Transistor BC109

    Abstract: 8C109 BC109 applications of Transistor BC108 TRANSISTOR bc108 Transistor BC107 BC108 transistor BC107A BC107 bc109c
    Text: Datasheet 1 BC108,A,B,C BC1 0 9 , B, C BC 0 7 , A , B E O l l ll U ff H V w V lI l1 semiconductor Corp- NPN SI LI CON TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 1 JEDEC T O - 8 CASE Manufacturers of World Class Discrete Semiconductors


    OCR Scan     		PDF BC107 BC108 BC109 BC107, BC108, BC107A, BC108A) BC107B, BC108B, Transistor BC109 8C109 applications of Transistor BC108 TRANSISTOR bc108 Transistor BC107 BC108 transistor BC107A bc109c

    BC140 equivalent

    Abstract: 2n3019 equivalent BC107 equivalent transistors bcy59 equivalent equivalent to BC177 BC141 equivalent 2n930 equivalent BC107 pnp equivalent bc109 equivalent BC160 equivalent
    Text: Discrete Devices Transistors Cont. European “Pro Electron” Types Type Near Equivalent Polarity Pkg. Type Near Equivalent Polarity Pkg. BC107 BC107A BC107B BC108 BC108A 2 N 2484 2N930 2N930 2 N 2484 2N930 NPN NPN NPN NPN NPN T O -18 T O -18 T O -18 T O -18


    OCR Scan     		PDF BC107 2N2484 BC107A 2N930 BC107B BC108 BC108A BC140 equivalent 2n3019 equivalent BC107 equivalent transistors bcy59 equivalent equivalent to BC177 BC141 equivalent 2n930 equivalent BC107 pnp equivalent bc109 equivalent BC160 equivalent

    BC208 transistor

    Abstract: ME1120 bc207 BC208 BC207B BC208C BC209B BC209C BC209 BC208B
    Text: Sem iconductors M icro-Electronics N P N Transistors N P N General Purpose Transistors m in max o < a lc mA BC107 45 6 110 500 2 BC1Q7A 45 45 6 6 110 240 260 500 2 2 20 20 5 5 110 110 900 260 2 2 BC107B BC108 BC 108A V a l c mA C 0b 0.6 0.6 100 100 2.5 2.5


    OCR Scan     		PDF BC107 19352G BC107A 31368X BC107B 31369R BC108 19353E BC108A 31782E BC208 transistor ME1120 bc207 BC208 BC207B BC208C BC209B BC209C BC209 BC208B

    BC548C

    Abstract: BC107A BC108A BC108b ZTX301
    Text: SEM ICO N D U CTOR DICE NPN SMALL SIGNAL TRANSISTORS V CBO V CEO h FE ^CBO V CE sat! at Dice type Min. Min. Wax. at VCB VCE at lc Volts Volts nA Volts Min. Max. mA Volts Volts mA BC546A BC546B ZTX304 BCY65EA BC182 BC107A BC107B BC237 BC547A BC547B BC550B BC550C


    OCR Scan     		PDF BC546A BC546B ZTX304 BCY65EA BC182 BC107A BC107B BC237 BC547A BC547B BC548C BC108A BC108b ZTX301

    Untitled

    Abstract: No abstract text available
    Text: TO-18 Metal-Can Package Transistors NPN Electrical Characteristics (Ta=25'C, Unless Otherwise Specified) Maximum Ratings Type No. Pd (W) 0Tc=25°c ^C8Q (V) Min ^GEO ^EBO (V) Min (V) Min 2N915 70 50 5 0.36 2N916 45 25 5 0.36 2N929 45 45 5 0.5 ^CM *C80 ^C B


    OCR Scan     		PDF 2N915 2N916 2N929 2N930 BC109C BCY56 BCY57 BCY58 BCY58-10 BCY58-7

    BC108A

    Abstract: bc109
    Text: BC107 to 109 _ A .F. SILICON PLANAR EPITAXIAL TRANSISTORS General purpose NPN transistors in TO-18 metal packages w ith the collector connected to the case. PNP com plem ents are BC177, BC178 and BC179. QUICK REFERENCE D ATA Collector-emitter voltage VgE = 0


    OCR Scan     		PDF BC107 BC177, BC178 BC179. BC107A BC107B BC108C BC108A BC108B bc109

    BC238

    Abstract: BCY59A ZTX304 ZTX302 BC107A BC107B BC182 BC237 BC546A BC546B
    Text: SEMICONDUCTOR DICE NPN SMALL SIGNAL TRANSISTORS V CBO V CEO IcBO Min. Min. Max. at V CB Volts Volts BC 546A BC546B Z TX304 BC Y65EA BC182 BC 107A BC107B BC237 BC 547A BC547B BC550B BC550C B C Y59A BC Y59B BCY59C BCY59D 2N930 Z TX303 BC183 BC184 ZTX302 ZTX301


    OCR Scan     		PDF BC546A BC546B ZTX304 BCY65EA BC182 BC107A BC107B BC237 BC547A BC548B BC238 BCY59A ZTX302

    KT 819 transistor

    Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18
    Text: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e


    OCR Scan     		PDF

    bc327 smd

    Abstract: bd139 smd 2n2907 smd bc109 smd bc107 smd BC640 smd BC547 smd 2n4401 smd bc558 SMD Bd135 smd
    Text: Philips Sem iconductors Small-signal Transistors Conversion list CONVERSION LIST FROM LEADED TO SMD TYPES LEADED SMD LEADED SMD LEADED SMD BC107 BC847 BC546 BC846 BC107A BC847A BC546A BC846A BC107B BC847B BC546B BC846B BC108 BC848 BC547 BC847 BC108A BC848A


    OCR Scan     		PDF BC107 BC107A BC107B BC108 BC108A BC108B BC108C BC109 BC109B BC109C bc327 smd bd139 smd 2n2907 smd bc109 smd bc107 smd BC640 smd BC547 smd 2n4401 smd bc558 SMD Bd135 smd

    bc207

    Abstract: ME1120 bc208 BC209 BC113 BC207b BC209C BC107B fairchild BC207A BC209B
    Text: Fairchild Sem iconductors Sem iconductors Silicon Small Signal Transistors N P N Low Level, Low Noise Amplifier Transistors Plastic Package T092, T O IM REFERENCE TABLE Max Ratings Code BC113 BC114 BC115 BC207 BC207A BC207B BC203 BC208A BC20IB BC209 BC209B


    OCR Scan     		PDF BC113 35289X BC114 35Z90C BC115 6291A BC207 35292X BC207A 35293H ME1120 bc208 BC209 BC207b BC209C BC107B fairchild BC209B

    2N4007

    Abstract: BC140 equivalent 2N4007 equivalent TRANSISTOR pnp BC140 TRANSISTOR BC140 BC141 equivalent 2N3060 BC179C TRANSISTOR BC109b bc108b equivalent
    Text: SPRAGUE Metal-Encased Silicon S E P T R Transistors HIGH-VOLTAGE VIDEO OUTPUT TRANSISTOR >- Type No. os < Pd T* = 25 C s V BR Ic B O CEO V o lts EBO V o lts iiA lc Watts CBO V olts Max. (m A) 1.0 300 250 7 ' Lim ts Con dition s V <BR) NPN 2N3440 D-C C U R R E N T G A I N ( h FE)


    OCR Scan     		PDF 2N3440 O-450 BC108A BC108B BC108C BC109B BC109C BC110 BC177A BC177B 2N4007 BC140 equivalent 2N4007 equivalent TRANSISTOR pnp BC140 TRANSISTOR BC140 BC141 equivalent 2N3060 BC179C TRANSISTOR BC109b bc108b equivalent

    BC140 equivalent

    Abstract: 2N2484 equivalent transistors BC141 equivalent bcy59 equivalent bc160 equivalent 2n930 equivalent BC107 equivalent transistors 2n3019 equivalent BC177 equivalent BC107 pnp equivalent
    Text: Discrete Devices Transistors Cont. Low Level Amplifiers Maximum Ratings Type Polarity Pd Ambient mW Electrical Characteristics @ 25° C VCB VCE V e b Volts Volts Volts HpE *C Min/Max mA V c E (S a t) @ Ic/lß Volts mA/mA ft MHz Min NF@f Cob pF Max dB


    OCR Scan     		PDF 2N327A 2N327B 2N328A 2N328B 2N329A 2N329B 2N760 2N760A 502N329A BCY56 BC140 equivalent 2N2484 equivalent transistors BC141 equivalent bcy59 equivalent bc160 equivalent 2n930 equivalent BC107 equivalent transistors 2n3019 equivalent BC177 equivalent BC107 pnp equivalent

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE blE D • bfc.SB'lBl DDS7Mtm 733 « A P X BC107 to 109 A.F. SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO-18 metal envelopes w ith the collector connected to the case. The BC107 is prim arily intended fo r use in driver stages o f audio amplifiers and in signal processing


    OCR Scan     		PDF BC107 BC108 BC109 BC107 bb53c DDS7S03

    bcy59 equivalent

    Abstract: BC140 equivalent 2N3913 BCY95 bc140-10 2n3019 equivalent 2N2708 2N328A BC109C NPN BCY22
    Text: Discrete Devices Transistors Cont. Choppers Maximum Ratings Polarity PD Ambient h f e @>c VCE V e B Volts Volts Min/Max mA II Type Electrical Characteristics @ 25° C V c E (S a t) @ Ic/lß mA/mA — Vq @Ib mV rd@l B Cob Package pF mA Ohms mA - 14 Max 2N943


    OCR Scan     		PDF 2N943 T0-18 2N2004 2N2333 2N2944 2N2945 2N2945A 2N2946 2N2946A 52N329A bcy59 equivalent BC140 equivalent 2N3913 BCY95 bc140-10 2n3019 equivalent 2N2708 2N328A BC109C NPN BCY22

    bc1078

    Abstract: bc107 curves Characteristic curve BC107 Transistor BC1078 audio BC108 BC109 BC107 Transistor BC107 7z08 BC109 characteristic
    Text: I I N AUER P H I L I P S / D I S C R E T E b'lE » • bfc.SB'iai □DS7Mtm 733 M A P X BC107 to 109 A.F. SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in T O -18 metal envelopes w ith the collector connected to the case. The BC107 is primarily intended for use in driver stages of audio amplifiers and in signal processing


    OCR Scan     		PDF BC107 BC108 BC109 BC109 7Z08551 bc1078 bc107 curves Characteristic curve BC107 Transistor BC1078 audio BC108 Transistor BC107 7z08 BC109 characteristic