BC307
Abstract: No abstract text available
Text: SEMICONDUCTOR BC307 MARKING SPECIFICATION TO-92 PACKAGE 1. Marking method Laser Marking No. 1998. 6. 23 816 K 1 2 3 B BC307 2. Marking 4 Item Marking Description Device Name BC307 BC307 Lot No. 816 8 Year 0~9 : 2000~2009 16 Week 16 : 16th Week KEC K KEC CORP.
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BC307
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BC307
Abstract: bc307 pnp BC238 datasheet BC239 transistor 309 BC309
Text: BC307/308/309 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • LOW NOISE: BC309 TO-92 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Collector-Emitter Voltage : BC307 : BC308/309 Collector-Emitter Voltage : BC307 : BC308/309
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BC307/308/309
BC309
BC307
BC308/309
BC307
bc307 pnp
BC238 datasheet
BC239
transistor 309
BC309
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bc307
Abstract: BC308
Text: BC307/308/309 PNP TO-92 Bipolar Transistors TO-92 1. COLLECTOR 2. BASE 3. EMITTER Features Amplifier dissipation NPN Silicon MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value IC BC307 BC308/309 Emitter-Base Voltage BC307 BC308/309 Collector Current -Continuous
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BC307/308/309
BC307
BC308/309
-10mA,
-100mA,
BC308
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BC307
Abstract: BC307B BC307C BC308C BC307 Motorola
Text: MOTOROLA Order this document by BC307/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC307 BC307B BC307C BC308C PNP Silicon COLLECTOR 1 2 BASE 3 EMITTER 1 2 3 CASE 29–04, STYLE 17 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol BC307, B, C BC308C
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BC307/D
BC307
BC307B
BC307C
BC308C
226AA)
BC307,
BC307
BC307B
BC307C
BC308C
BC307 Motorola
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BC307
Abstract: BC308 BC308 PNP transistor BC309 309 IC
Text: BC307/308/309 BC307/308/309 Switching and Amplifier Applications • Low Noise: BC309 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES VCEO Parameter Collector-Emitter Voltage
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BC307/308/309
BC309
BC307
BC308/309
BC307
BC308
BC308 PNP transistor
BC309
309 IC
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transistor BC 458
Abstract: Transistor BC 308C BC 2001 transistor BC307 BC307BTA BC237 bc309 BC308
Text: BC307/308/309 BC307/308/309 Switching and Amplifier Applications • Low Noise: BC309 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES VCEO Parameter Collector-Emitter Voltage
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BC307/308/309
BC309
BC307
BC308/309
BC308
BC308ABU
transistor BC 458
Transistor BC 308C
BC 2001 transistor
BC307
BC307BTA
BC237
bc309
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Characteristic curve BC107
Abstract: TRANSISTOR 308B BC237 BC307 BC108 characteristic bc307b
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC307 BC307B BC307C BC308C PNP Silicon COLLECTOR 1 2 BASE 3 EMITTER 1 2 3 CASE 29–04, STYLE 17 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol BC307, B, C BC308C Unit Collector – Emitter Voltage
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BC307
BC307B
BC307C
BC308C
226AA)
BC307,
Junc218A
MSC1621T1
MSC2404
Characteristic curve BC107
TRANSISTOR 308B
BC237
BC108 characteristic
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BC307
Abstract: BC238 datasheet BC239 BC309 transistor bc237
Text: BC307/308/309 BC307/308/309 Switching and Amplifier Applications • Low Noise: BC309 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES VCEO Parameter Collector-Emitter Voltage
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BC307/308/309
BC309
BC307
BC308/309
BC307
BC238 datasheet
BC239
BC309
transistor bc237
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bc307bta
Abstract: BC307
Text: BC307/308/309 BC307/308/309 Switching and Amplifier Applications • Low Noise: BC309 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES VCEO Parameter Collector-Emitter Voltage
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BC307/308/309
BC309
BC307
BC308/309
BC307
bc307bta
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BC308A
Abstract: Transistor BC 308C BC307 Bc308
Text: BC307/308/309 BC307/308/309 Switching and Amplifier Applications • Low Noise: BC309 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES VCEO Parameter Collector-Emitter Voltage
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BC307/308/309
BC309
BC307
BC308/309
BC308
BC308A
Transistor BC 308C
BC307
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BC307
Abstract: BC238 datasheet BC239 BC309 308 transistor
Text: BC307/308/309 BC307/308/309 Switching and Amplifier Applications • Low Noise: BC309 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES VCEO Parameter Collector-Emitter Voltage
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BC307/308/309
BC309
BC307
BC308/309
BC307
BC238 datasheet
BC239
BC309
308 transistor
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BC307
Abstract: BC308 PNP transistor download datasheet BC308
Text: BC307…BC308 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications 1. Collector 2. Base 3. Emitter TO-92 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol BC307 BC308 Unit Collector Base Voltage -VCBO 50 30
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BC307.
BC308
BC307
BC307
BC308 PNP transistor download datasheet
BC308
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bc307
Abstract: BC309 BC308
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC307/308/309 TRANSISTOR PNP TO-92 FEATURES Amplifier dissipation NPN Silicon 1. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 2. BASE Symbol Parameter
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BC307/308/309
BC307
BC308/309
-10mA,
-100mA,
bc307
BC309
BC308
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BC307
Abstract: No abstract text available
Text: DC COMPONENTS CO., LTD. BC307 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose switching and amplifier applications. TO-92 Pinning .190 4.83 .170(4.33) 1 = Collector 2 = Base 3 = Emitter
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BC307
-100mA,
-10mA,
200Hz
50MHz
BC307
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bc308
Abstract: BC307 BC309
Text: CHINA GUANGDONG DONGGUAN HAROM ELECTRONICS CO., LTD TO-92 Plastic-Encapsulate Transistors www.haorm.cn BC307/308/309 TRANSISTOR PNP TO-92 FEATURES Amplifier dissipation NPN Silicon 1. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 2. BASE Symbol
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BC307/308/309
BC307
BC308/309
-10mA,
-100mA,
bc308
BC307
BC309
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BC307B
Abstract: BC307 BC307C 308C BC308 BC308C
Text: BC307… BC308 PNP Silicon Amplifier Transistors On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta=25oC Symbol BC307B,C BC308C Unit Collector Emitter Voltage
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BC307.
BC308
BC307B
BC308C
BC307
100MHz
200Hz
BC307C
308C
BC308
BC308C
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BC307B
Abstract: BC307 BC308C 308C BC307C BC308
Text: BC307… BC308 PNP Silicon Amplifier Transistors On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta=25oC Symbol BC307B,C BC308C Unit Collector Emitter Voltage
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BC307.
BC308
BC307B
BC308C
BC307B
BC307C
BC307
100MHz
200Hz
BC308C
308C
BC308
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BC307B
Abstract: BC307 BC307C BC308 PNP transistor download datasheet 308C BC308 BC308C
Text: BC307… BC308 PNP Silicon Amplifier Transistors On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta=25oC Symbol BC307B,C BC308C Unit Collector Emitter Voltage
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BC307.
BC308
BC307B
BC308C
BC307
100MHz
200Hz
BC307C
BC308 PNP transistor download datasheet
308C
BC308
BC308C
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T BC309
Abstract: No abstract text available
Text: PNP EPITAXIAL SILICON TRANSISTOR BC307/308/309 SWITCHING AND AMPLIFIER APPLICATIONS . LOW NOISE: BC309 TO -92 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-E m itter Voltage : BC307 : BC308/309 C ollector-E m itter Voltage : BC307
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BC307/308/309
BC309
BC307
BC308/309
T BC309
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fr 309
Abstract: BC307 309 T BC239 BC309
Text: PNP EPITAXIAL SILICON TRANSISTOR BC307/308/309 SWITCHING AND AMPLIFIER APPLICATIONS TO -92 • LO W NOISE: BC309 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Symbol C ollector-E m ltter Voltage : BC307 : BC 308/309 C ollector-E m ltter Voltage : BC307
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BC307/308/309
BC309
BC307
BC308/309
BC308/309
fr 309
BC307
309 T
BC239
BC309
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309B
Abstract: BC306C C308C bc307b
Text: BC307,B,C BC308C BC309B MAXIMUM RATINGS Sym bol BC307 BC308C BC309 Unit C o llecto r-Em itter Voltage VCEO -4 5 -25 -2 5 Vdc C o llecto r-Base Voltage VCBO -5 0 -30 -3 0 E m itter-B ase Vo ltage v ebo Rating Vdc - 5 .0 Vdc CASE 29-04, STYLE 17 TO-92 TO-226AA
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BC307
BC308C
BC309
BC309B
O-226AA)
309B
BC306C
C308C
bc307b
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CBC307B
Abstract: C307B C307 307c BC307 BC307B T BC309
Text: BC307,B,C BC308C BC309,B MAXIMUM RATINGS Symbol BC307 BC308C BC309 C o lle c to r -E m itte r V o lta g e VCEO -4 5 -2 5 -2 5 Vdc C o lle c to r-B a s e V o lta g e VCBO -5 0 -3 0 -3 0 V dc Rating CASE 29-04, STYLE 17 TO-92 TO-226AA vebo -5 .0 V dc C o lle c to r C u rre n t — C o n tin u o u s
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BC307
BC308C
BC309
BC307
BC308C
BC309
O-226AA)
BC308C,
CBC307B
C307B
C307
307c
BC307B
T BC309
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BC307
Abstract: No abstract text available
Text: Transistors BC307 USHA INDIA LTD SWITCHING AND AMPLIFIER APPLICATIONS TO-92 • LOW NOISE ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Collector-Emitter Voltage Unit Rating Symbol Characteristic VcES Collector-Emitter Voltage -5 0 V -4 5 V -5 -1 0 0 500 150 —5 5 ~ 1 5 0
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BC307
-10/JA,
-10mA,
100mA,
BC307
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BC307
Abstract: transistor 309 BC309 308 transistor BC30S bc308 transistor BC309
Text: BC307/308/309 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS TO-92 • LOW NOISE: BC309 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Sym bol C ollector-Em itter V oltage :B C 3 0 7 ' :B C 3 0 8 /3 0 9 C ollector-Em itter Voltage
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BC307/308/309
BC309
BC307
BC308/309
71b4ms
00ES055
BC307
transistor 309
BC309
308 transistor
BC30S
bc308
transistor BC309
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