C307 Search Results

Contextual Info: CCDカメラ C3077-70,C5403-30,C5405-50 ※レンズはオプションです。 C3077-70C5403-30、C5405-50は、小型･軽量 特 長 のB/Wビデオカメラです。画像処理、画像計測用カメラと して高品位な画像を提供します。各種のモード設定がリア

BTA1579S3

Abstract: BTC4102S3
Contextual Info: Spec. No. : C307S3 Issued Date : 2003.06.27 CYStech Electronics Corp. Revised Date : Page No. : 1/4 General Purpose PNP Epitaxial Planar Transistor BTA1579S3 Description • The BTP1579S3 is designed for high voltage amplification application. • High BVCEO, BVCEO= -120V

Contextual Info: DATASHEET Photon Detection C30737LH-300 Series Low Capacitance Silicon Avalanche Photodiode in Leadless Ceramic Carrier SMT Package for High Volume Laser Meter and Range Finding Applications Key Features •      Low capacitance, <1pF, for high

c3072

Abstract: line filter 6.8mH C307-2
Contextual Info: C3072 REV A Product Description 6.8mH Ringing Filter Inductor Customer Terminal #1 Indicator EIA date code and lot code A COEV C3072 XXXXX [9.91 MAX] 0.390 MAX Coplanar with surface A +0.006"/-0.000" 0.40 .016REF 1 8 2 7 3 6 4 5 [11.05 MAX] 0.435 MAX [9.14 MAX]

PerkinElmer Avalanche Photodiode

Contextual Info: Features and Benefits Introduction The short wavelength enhanced silicon avalanche photodiode APD by PerkinElmer (Model C30739ECERH) is designed for low light level applications covering the spectral range from less than 400 nm to greater than 700 nm. Benefits

Contextual Info: CCD Video Camera C3077-70/-71 C5403-30/-31 C5405-50/-51 DATA SHEET ▲ Shown with optional lens. The C3077-70/-71,C5403-30/-31,C5405-50/-51 incorporates a next generation CCD into a new compact B/W camera. Features of this model include high resolution, sensitivity, and S/N ratio. An electronic shutter

A3472-04

Abstract: C2741-60 Hamamatsu C3077-70 C3077-71 C2741 hamamatsu C2741 hamamatsu tv
Contextual Info: 2/3-inch CCD Video Camera C3077-70/-71 DATA SHEET ▲ Shown with optional lens. The C3077-70/-71 incorporates a next generation 2/3-inch CCD into a new compact B/W camera. Features of this model include high resolution, sensitivity, and S/N ratio. An electronic shutter

PerkinElmer Optoelectronics

Abstract: C30734ECER Optoelectronics photodetector 290601 j7v8p7 perkinelmer
Contextual Info: Imaging Advanced Prototype Telecom InGaAs PIN Photodiodes C30734ECER InGaAs PIN Photodiodes Description The C30734ECER is a high-speed InGaAs PIN photodetector. The chipon-carrier photodetector features low capacitance and exceptionally high bandwidth for ease of integration into

PerkinElmer Optoelectronics

Abstract: C30734ECER GR-468-CORE high-speed optoelectronics 1260nm
Contextual Info: Imaging Telecom Detectors - Mounted on ceramic High-Speed InGaAs PIN C30734ECER Detectors - Mounted on ceramic Description The C30734ECER is a high-speed InGaAs PIN photodetector. The chipon-carrier photodetector features low capacitance and exceptionally high

Contextual Info: Overview Features and Benefits PerkinElmer’s C30741 series of N-type silicon p-i-n photodiodes provide fast response and high quantum efficiency in the spectral range of 400 to 1100 nm. The wavelength of maximum sensitivity is @ 800 nm. As different applications have different

BTN5551N3

Abstract: BTP5401N3
Contextual Info: Spec. No. : C307N3 Issued Date : 2003.06.27 CYStech Electronics Corp. Revised Date : Page No. : 1/4 General Purpose PNP Epitaxial Planar Transistor BTP5401N3 Description • The BTP5401N3 is designed for general purpose amplification. • Large IC , IC Max = -0.6A

BTC3906N3

Abstract: BTA1514N3
Contextual Info: CYStech Electronics Corp. Spec. No. : C307N3 Issued Date : 2002.06.11 Revised Date : 2002.12.04 Page No. : 1/4 General Purpose PNP Epitaxial Planar Transistor BTA1514N3 Description • The BTA1514N3 is designed for general purpose applications requiring high breakdown

Contextual Info: PhotodiodeS฀For฀hiGh-PerFormAnce฀APPlicAtionS฀ Right: TO-C30737PH Series T-1¾ TO-like hrough-Hole Package (4.9 mm Diameter) Let: C30737LH Series Leadless Ceramic Carrier Package (3 x 3 mm2) C30737 High Speed, Low Voltage APD – C30724 Low Temperature Coeficient APD

PerkinElmer Avalanche Photodiode

Abstract: C30902 C30737EH C30902S PerkinElmer Optoelectronics C30902E avalanche photodiode bias and high voltage C30737E-500 photodiode Avalanche photodiode C30737
Contextual Info: Description The C30737 type avalanche photodiode provides high responsivity between 500nm and 1000nm, as well as extremely fast rise times at all wavelengths with a frequency response up to 1.0 GHz. The active area diameter of the photosensitive surface is 0.5mm.

133/ATMEL 230 24C04

Contextual Info: A R253 10K C308 10uF/6.3V 10K 5 DD30 BAV99 R259 +3.3VD R335 10K +3.3VD HD-VSW0 1 B COVER1 1 2 3 4 5 COVER1 47n 47n 47R C57 47R C58 3906 Q41 1 7 RGB0_RIN- RGB0_GIN- R252 47K C331 R249 C307 1n 100R Jupiter-RST 10uF/6.3V RESET ON_PANEL HOTPLUG 47n R126 R124 RGB0_BIN-

C30737LH-500-92

Abstract: CERAMIC LEADLESS CHIP CARRIER
Contextual Info: DATASHEET Photon Detection C30737PH and C30737LH Series Silicon Avalanche Photodiodes APDs for range finding and laser meters – plastic and leadless ceramic carrier packages Excelitas’ C30737 Series APDs are ideally suited to laser meter, laser range finding and area scanning applications,

Contextual Info: DATASHEET Photon Detection C30739ECERH Series Short Wavelength Enhanced Silicon Avalanche Photodiode Key Features The C30739ECERH large area silicon avalanche photodiode APD is intended for use in a wide variety of broadband low light level applications covering the spectral range from below 400 to over 700 nm.

c3072

Abstract: KTC3072D
Contextual Info: SEMICONDUCTOR C3072D MARKING SPECIFICATION DPAK PACKAGE 1. Marking method Laser Marking or Ink Marking 2. Marking K C3072 Y 016 No. Item Marking Description 1 KEC K KEC CORP. 2 Device Name C3072 C3072D 3 hFE Grade Y O,Y,GR 4 Lot No. 016 00.12.27 Revision No :

TRANSISTOR n5401 b

Abstract: n5401 n5401 transistor C307A3 BTN5551A3 BTP5401A3 TRANSISTOR n5401 3n5401
Contextual Info: Spec. No. : C307A3 Issued Date : 2003.06.27 CYStech Electronics Corp. Revised Date : Page No. : 1/4 General Purpose PNP Epitaxial Planar Transistor BTP5401A3 Description • The BTP5401A3 is designed for general purpose amplification. • Large IC , IC Max = -0.6A

smd t1A

Abstract: t1A 13
Contextual Info: Photodiodes for High-Performance Applications Avalanche Right: TO-C30737PH Series T-1¾ TO-like Through-Hole Package (4.9 mm Diameter) P hotodiodes for Range Left: C30737LH Series Leadless Ceramic Carrier Package (3 x 3 mm2) F inding Applications C30737 High Speed, Low Voltage APD – C30724 Low Temperature Coefficient APD

Contextual Info: CCD camera C3077-70/-71,C5403-30/-31,C5405-50/-51 ▲ Lens is optional. The C3077-70/-71,C5403-30/-31,C5405-50/-51 incorporates a CCD into a compact B/W camera. Features of this model include high resolution, sensitivity, and S/N ratio. An electronic shutter function enables monitoring of moving objects.

Contextual Info: Near Infrared CCD Camera C3077-79 Near Infrared 2/3 inch CCD Video Camera ▲ Shown with optional lens. The C3077-79 is employing a 2/3 inch CCD, featuring high sensitivity in the near infrared region, especially in the wavelength from 800 nm to 1100 nm. The C3077-79 also utilizes a frame transfer type CCD device.

EG*G Optoelectronics

Abstract: C30724 C30724P EG&G VS289 MIL-Q-9858A Si apd photodiode 800 nm EG&G optoelectronics apd bias 200v eg&g HUV-1100
Contextual Info: J^E G S G CANADA AN OPTOELECTRONICS GROUP COMPANY SÌ APD Package 04-22-97) C30724P Features: 3.25/3.17 ( 0 . 1 2 8 ) / ( 0 .125) 3_ 1 .0 2 (0.040) CATHODE cxzzr 3 t = I J . 2.54 ( 0 . 100 ) ANODE 0 .4 6 -c

marking 2L PNP SOT-89

Abstract: BTC3906M3 BTA1514M3
Contextual Info: Spec. No. : C307M3 Issued Date : 2007.01.10 Revised Date : Page No. : 1/5 CYStech Electronics Corp. General Purpose PNP Epitaxial Planar Transistor BTA1514M3 Description • The BTA1514M3 is designed for general purpose application requiring high breakdown voltage.