BC394 Search Results

BC394

Contextual Info: BC394 EPITAXIAL PLANAR NPN • HIGH VOLTAGE AMPLIFIER DESCRIPTION The BC394 is a silicon Planar Epitaxial NPN transistor in Jedec TO-18 metal case, designed for general purpose high-voltage and video amplifier applications. TO-18 INTERNAL SCHEMATIC DIAGRAM

BF117

Abstract: BF294 BF178 BF299 BC236 BF174 BF298 BC312 BF120 BF137
Contextual Info: High Voltage Transistors TYPE NO. POLA­ RITY CASE MAXIMUM RATINGS HFE Pd VCEO IC ICM* VCER* min mai mW (mA) (V) VCE(sat) IC (mA) VCE max (V) (V) IC (mA) fT min (MHz) Cob Cre* max (MHz) BC236 BC285 BC312 BC393 BC394 N N N P N TO-106 TO-18 TO-39 TO-18 TO-18

Contextual Info: 3DE » • 7^237 □QBÜ'iaS S ■ T i• V°| / r : SCS-THOM SON ^_ 7# 5 C L l ^ g « S _ B C 3 9 4 S G S-THOMSON HIGH VOLTAGE AMPLIFIER DESCRIPTION The BC394 is a silicon planar epitaxial NPN trans­

BC393

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP HIGH VOLTAGE TRANSISTORS BC393 TO-18 Metal Can Package Complementary BC394 ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION

2n6218

Abstract: 2sC 4927 393P BC285 BC532 C 4927 triac mw 137 BC394 BC530 BC533
Contextual Info: SE MIC ONDUCT ORS INC CHE D | fll3bbSG Q00D303 fi | T-^ High Voltage Transistors T YPE NO. t a. M A XIM U M R A T IN G S VCE SAT> H FE V C EO Pd (mW •c IC M " (m A) (V ) min « o a. C A SE BC 236 BC 285 BC 312 BC 393 BC394 N N N P N TO-106 TO-18 TO-39 TO-18

BC236

Abstract: BF305 BCW50 BC285 BF137 BF298 BF299 BC312 BCW5 BCX30
Contextual Info: NO. v 'c Cob V CE SAT Tl X M A X IM U M R A T IN G S CEO Pd (mW) 'c m • Im A I (V ) min max BC236 BC285 BC312 BC393 BC394 N N N P N TO-106 T O -18 TO-39 T O -18 TO-18 300 360 800 400 400 50 100 150 100 100 120 120 100 180 180 25 30 50 50 30 200 BC450 BC530

BC394

Abstract: BC393
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR TRANSISTORS BC393 PNP BC394 NPN TO-18 Metal Can Package High Voltage Transistors ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage SYMBOL

Contextual Info: BC394 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 160V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.1A All Semelab hermetically sealed products

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR TRANSISTORS BC393 PNP BC394 NPN TO-18 Metal Can Package High Voltage Transistors ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage SYMBOL

bc394

Contextual Info: nil Vrrr= mi BC394CSM SEME LAB HIGH VOLTAGE NPN AMPLIFIER TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dim ensions in mm inches FEATURES 0.51 ±0.10 (0.02 ± 0.004) (0 .0 1 2 ) • SILICON PLANAR EPITAXIAL NPN

BC394

Abstract: BC394CSM
Contextual Info: BC394CSM HIGH VOLTAGE NPN AMPLIFIER TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.31 rad. (0.012) 3 2 • HERMETIC CERAMIC SURFACE MOUNT

2N6218

Abstract: BC530 T1923 triac mw 137 BC532 BFW45 tr bc 337 393P BC394 BC533
Contextual Info: SE MIC ONDUCT ORS INC CHE D | fll3bbSG Q00D303 fi | T-^ High V oltage Transistors T YPE NO. t a. M A XIM U M R A T IN G S VCE SAT> H FE V C EO Pd (mW •c IC M " (m A) (V ) min « o a. C A SE BC 236 BC 285 BC 312 BC 393 BC394 N N N P N TO-106 TO-18 TO-39

BC394

Contextual Info: BC394 EPITAXIAL PLANAR NPN • HIGH VOLTAGE AMPLIFIER DESCRIPTION The BC394 is a silicon Planar Epitaxial NPN transistor in Jedec TO-18 metal case, designed for general purpose high-voltage and video amplifier applications. c u d TO-18 e t le s t o r

BF297

Abstract: bf391 t BF179 bf305
Contextual Info: High Voltage Transistors H Fe M A X IM U M R A T IN G S TY PE NO. BC285 BC312 BC393 BC394 BC450 BC530 BC531 BC532 BC533 BCW50 PO LA ­ CASE VcEO m W IcM* (m A ) VcER* (V ) 360 800 400 400 350 100 150 100 100 200 120 100 180 180 100 30 50 50 30 50 TO-92A

BC393

Abstract: BC394
Contextual Info: BC393 HIGH VOLTAGE AMPLIFIER DESCRIPTION The BC393 is a silicon planar epitaxial PNP transistor in Jedec TO-18 metal case, designed for general purpose high-voltage and video amplifier applications. The complementary NPN type is the BC394. TO-18 INTERNAL SCHEMATIC DIAGRAM

BC393

Abstract: SGS-Thomson
Contextual Info: SGS-THOMSON R ffl0» [iyiM !0 gi BC393 HIGH VOLTAGE AMPLIFIER DESCRIPTION The BC393 is a silicon planar epitaxial PNPtransistor in Jedec TO-18metal case, designed for general purpoæ high-voltage and video amplitier applica­ tions. The complementary NPN type is the BC394.

BC394

Contextual Info: BC394 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 160V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.1A All Semelab hermetically sealed products

BF174

Abstract: BF336 BF178 BC-530 BF117 BF338 bf391 t bc285 b*137 BFI79
Contextual Info: High Voltage Transistors T Y PE P O L A ­ NO . R IT Y C A SE BC285 BC312 BC393 BC394 BC450 N N P N P M A X IM U M R A T IN G S ^CEO Pi Ic Ic.Yl* ^CER* m W (m A) (V) H FE fT VcE(sat) min m ax Ic (m A) VfE (V) m ax (V) Ic (m A ) m in (M H z) m ax (M H z)

BC394

Contextual Info: BC394 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 160V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.1A All Semelab hermetically sealed products

BC393

Abstract: BC394
Contextual Info: Continental Device India Limited IS/ISO 9002 Lic# QSC/L- 000019.3 An IS/ISO 9002 and IECQ Certified Manufacturer SILICON PLANAR TRANSISTORS BC393 PNP BC394 NPN TO-18 Metal Can Package High Voltage Transistors ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage

transistor 2N3906 smd 2A SOT23

Abstract: 2n3904 TRANSISTOR REPLACEMENT GUIDE BC327-40 SMD bc107 TRANSISTOR SMD CODE PACKAGE SOT23 TRANSISTOR BC337-25 PNP BC548 TRANSISTOR REPLACEMENT BC327-25 SMD TRANSISTOR BC337 SMD 2n3906 REPLACEMENT MMBT3094
Contextual Info: Small Signal Transistors Industry Standard BF722 BF723 BFN38 CZTA42 CZTA92 KSA539 KSA643 KSA733 KSC1623 KSC815 MMBT3094 MMBT3906 MMBT4401 MMBT4403 MMBTA42 ST Nearest ST Replacement Industry Standard BF720 BF721 BF720 STZTA42 STZTA92 MMBTA92 MPSA42 MPSA92 MSB709

D97AU805A

Abstract: D97AU806 1N4148 TDA7294S 200W RMS HI-FI AMPLIFIER
Contextual Info: TDA7294S 100V - 100W DMOS AUDIO AMPLIFIER WITH MUTE/ST-BY 1 • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 2 Features Figure 1. Package VERY HIGH OPERATING VOLTAGE RANGE ± 45V MULTIPOWER BCD TECHNOLOGY DMOS POWER STAGE HIGH OUTPUT POWER (100W @ THD = 10%,

switch NPN

Abstract: BSY18 2N2369 2n4390
Contextual Info: Small Signal Transistors TO-18 Case TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ V (V) (V) (mA) MIN MIN MIN VCB (V) MAX hFE @ IC (mA) MIN MAX @ VCE (V) VCE (SAT) @ IC Cob fT (V) (mA) (pF) (MHz) (dB) ton (ns) toff (ns) MAX MAX MAX MAX MAX MIN NF *ICES *ICEV

Contextual Info: 3DE D f Z 7 ^ 7 # • S G 7^237 S - T H O s M 0030^01 fi ■ S O N fL K g T F lO K i B C 3 9 3 S G S-THOMSON HIGH VOLTAGE AMPLIFIER DESCRIPTIO N The BC393 is a silicon planar epitaxial PNP trans­ istor in Jedec TO-18 metal case, designed for ge­ neral purpose high-voltage and video amplifier ap­