KSC815 Search Results

transistor 2N3906 smd 2A SOT23

Abstract: 2n3904 TRANSISTOR REPLACEMENT GUIDE BC327-40 SMD bc107 TRANSISTOR SMD CODE PACKAGE SOT23 TRANSISTOR BC337-25 PNP BC548 TRANSISTOR REPLACEMENT BC327-25 SMD TRANSISTOR BC337 SMD 2n3906 REPLACEMENT MMBT3094
Contextual Info: Small Signal Transistors Industry Standard BF722 BF723 BFN38 CZTA42 CZTA92 KSA539 KSA643 KSA733 KSC1623 KSC815 MMBT3094 MMBT3906 MMBT4401 MMBT4403 MMBTA42 ST Nearest ST Replacement Industry Standard BF720 BF721 BF720 STZTA42 STZTA92 MMBTA92 MPSA42 MPSA92 MSB709

KSC815

Abstract: KSA539
Contextual Info: KSC815 KSC815 Low Frequency Amplifier & High Frequency Oscillator • Collector-Base Voltage : VCBO=60V • Complement to KSA539 • Suffix “-C” means Center Collector 1. Emitter 2. Collector 3. Base TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor

Contextual Info: KSC815 KSC815 Low Frequency Amplifier & High Frequency Oscillator • Collector-Base Voltage : VCBO=60V • Complement to KSA539 • Suffix “-C” means Center Collector 1. Emitter 2. Collector 3. Base TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor

ksa539

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 KSC815 TRANSISTOR NPN 1.EMITTER FEATURES z Low Collector Current z Complement To KSA539 z Low Frequency Amplifier & High Frequency Oscillator 2.BASE 3.COLLECTOR

KSC815

Abstract: KSA539
Contextual Info: KSC815 KSC815 Low Frequency Amplifier & High Frequency Oscillator • Collector-Base Voltage : VCBO=60V • Complement to KSA539 • Suffix “-C” means Center Collector 1. Emitter 2. Collector 3. Base TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor

ksa539

Contextual Info: KSA539 -0.2A , -60V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE TO-92 Low Saturation Medium Current Application. Complementary to KSC815 CLASSIFICATION OF hFE

KSC815

Abstract: KSA539
Contextual Info: KSC815 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER HIGH FREQUENCY OSCILLATOR TO-92 • Complement to KSA539 • Collector-Base Voltage VCBO=60V ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol VCBO VCEO VEBO IC PC TJ T STG Collector-Base Voltage

KSC815

Contextual Info: KSC815 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER HIGH FREQUENCY OSCILLATOR • Complement to KSA539 • Collector-Base Voltage V c b o =60V ABSOLUTE MAXIMUM RATINGS TA=25'C Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage

KSA539

Abstract: KSC815
Contextual Info: KSA539 KSA539 Low Frequency Amplifier • • • • Complement to KSC815 Collector-Base Voltage: VCBO = -60V Collector Power Dissipation: PC = 400mW Suffix “-C” means Center Collector 1. Emitter 2. Collector 3. Base TO-92 1 1. Emitter 2. Base 3. Collector

KSC815

Contextual Info: KSC815 KSC815 TRANSISTOR NPN TO-92 FEATURES Power dissipation PCM: 0.4 1. EMITTER W (Tamb=25℃) 2. BASE Collector current ICM: 0.2 A Collector-base voltage V V(BR)CBO: 60 Operating and storage junction temperature range 3. COLLECTOR 1 2 3 TJ, Tstg: -55℃ to +150℃

KSC815

Abstract: KSC815Y KSC815YTA
Contextual Info: KSC815 KSC815 Low Frequency Amplifier & High Frequency Oscillator • Collector-Base Voltage : VCBO=60V • Complement to KSA539 • Suffix “-C” means Center Collector 1. Emitter 2. Collector 3. Base TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor

KSC815

Contextual Info: KSA539 KSA539 Low Frequency Amplifier • • • • Complement to KSC815 Collector-Base Voltage: VCBO = -60V Collector Power Dissipation: PC = 400mW Suffix “-C” means Center Collector 1. Emitter 2. Collector 3. Base TO-92 1 1. Emitter 2. Base 3. Collector

Contextual Info: KSC815 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER HIGH FREQUENCY OSCILLATOR • Com plement to KSA539 •C o llecto r-B ase Voltage Vcso=60V ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Sym bol Rating Unit VcBO 60 45 5 200 400 150 -5 5 -1 5 0

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 KSA539 TRANSISTOR PNP 1.EMITTER FEATURES z Low Saturation Medium Current Application z Complement to KSC815 2.BASE 3.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

LB 122 transistor To-92

Abstract: LB 122 NPN TRANSISTOR LB 122 transistor KSC815 KSA539 L300 samsung l300 TRANSISTOR A52
Contextual Info: SAMSUNG SEMICONDUCTOR INC KSC815 IME D | 7 cJ b 4 m 2 OODbASl 2 | NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER HIGH FREQUENCY OSCILLATOR TO-92 • Complement to KSA539 • Collector-Base Voltage Vcao=60V ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic

KSC815

Abstract: ksa539
Contextual Info: KSC815 0.2A , 60V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES Low Collector Current Complementary To KSA539 Low Frequency Amplifier & High Frequency Oscillator

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors KSC815 TRANSISTOR NPN TO-92 FEATURES Power dissipation PCM: 0.4 1. EMITTER W (Tamb=25℃) 2. BASE Collector current 0.2 A ICM: Collector-base voltage V V(BR)CBO: 60

MBR1620CT

Abstract: 1.5Ke240 MBR5020 MBR5045PT BC337 AP6KE15C S9012 s9018 MP106 MB-106
Contextual Info: MCC PART INDEX Diodes PART NUMBER 1.5KE10(C)(A) 1.5KE100(C)(A) 1.5KE11(C)(A) 1.5KE110(C)(A) 1.5KE12(C)(A) 1.5KE120(C)(A) 1.5KE13(C)(A) 1.5KE130(C)(A) 1.5KE15(C)(A) 1.5KE150(C)(A) 1.5KE16(C)(A) 1.5KE160(C)(A) 1.5KE17(C)(A) 1.5KE170(C)(A) 1.5KE18(C)(A) 1.5KE180(C)(A)

secos gmbh

Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
Contextual Info: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers

Contextual Info: SAMSUNG ELECTRONICS INC bOE » • 7^4142 TRANSISTORS 0Q11524 *i27 « S r i G K FUNCTION GUIDE SOT-23 Type Transistors Continued Condition D evio and Polarity (Marking) NPN VcEO (V) PNP KST1009F2(F2) KST1009F3(F3) KST1009F4(F4) KST1009F5(F5) KST4124(ZC)

Transistor S8550 2TY

Abstract: Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6
Contextual Info: DIODES IN SOD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W B5819W BAT42W BAT43W BAT46W* BAV16W BAV19W BAV20W BAV21W SD101AW* SD101BW* SD101CW* SD103AW SD103BW SD103CW PD VR V IFM(mA) IR( A) (mW) 350 75 350 75 250

BD53A

Abstract: KSA733 KSC1330 KSC945 BD139 BD433 TO92 KSE 13007 L ss8050 sot-23 KSE13009F KSP10
Contextual Info: FUNCTION GUIDE TRANSISTORS 3. QUICK REFERENCE TABLE APPLICATION 3.1 Audio Equipment “i Package Application FM AM D iff. Amp RM AM P M ix Conv Local Ose IF SOT-23 KSC2223 KSC2223 KSC2223 KSC2715 RF KSC1623 Conv Ose KSC2715 IF KSC2715 10W 20W KSA812/KSC1623

transistor 13003 AD

Abstract: ksd-180 HF 13003 KSD180 13003 HF KSD168 KSD966 ksd-168 PNP NPN Transistor VCEO 120V 100V Ic 7A KSC 1.5k 250v
Contextual Info: TRANSISTORS FUNCTION GUIDE 1. SMALL SIGNAL TRANSISTORS 1.1 General Purpose Transistors 1.1.1 SOT-23 Type Transistors Device and Polarity Marking Condition V ceo lc Vce h FE Condition (c le Vce(sat},VBE(sat)(v) Condition fiÌMHz) (V) (A) (V) !c (mA) (mA)

thermistor KSD201

Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
Contextual Info: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™