BC547VI Search Results

BC547VI Datasheets (4)

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
BC547VI	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF	86.5KB	1
BC547VI	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF	96.48KB	1
BC547VI	Siemens	50 V, 100 mA, NPN silicon transistor	Scan	PDF	216.3KB	6
BC547VIP	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF	172.78KB	1

BC547VI Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: BC547VIP Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)50 I(C) Max. (A)100m Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)15nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.	Original	BC547VIP Freq300M	PDF
Contextual Info: BC547VI Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)50 I(C) Max. (A)100m Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)15u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.110 h(FE) Max. Current gain.	Original	BC547VI Freq300M	PDF
y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711	PDF

Catalog Datasheet

Type

Document Tags

PDF

Contextual Info: BC547VIP Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)50 I(C) Max. (A)100m Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)15nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.

Original

BC547VIP Freq300M

PDF

Contextual Info: BC547VI Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)50 I(C) Max. (A)100m Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)15u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.110 h(FE) Max. Current gain.

Original

BC547VI Freq300M

PDF

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

OCR Scan

500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

PDF