BC849W Search Results

BC846AW

Abstract: BC846BW BC846CW BC846W BC847W BC848W BC849W BC850AW BC850BW BC850W
Contextual Info: BC846W…BC850W NPN Silicon Epitaxial Planar Transistor for general purpose and switching applications Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage BC846W BC847W BC848W BC849W BC850W VCBO 80 50 30 30 50 V Collector Emitter Voltage

Contextual Info: bbSBSBl OOBMMbfi T 7 T « A P X P hilips S em iconductors NPN general purpose transistor BC849W; BC850W N AMER PHILIPS/DISCRETE FEATURES Product specification • ■ ■ ■ M i b7 E » PIN CONFIGURATION • S- mini package. • Low noise DESCRIPTION NPN transistor in a plastic SOT323

BC849BW

Abstract: BC849CW BC849W BC850BW BC850CW BC850W BC859W BC860W
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 BC849W; BC850W NPN general purpose transistors Product specification Supersedes data of 1997 Jun 20 1999 Apr 12 Philips Semiconductors Product specification NPN general purpose transistors BC849W; BC850W

BC846W

Abstract: BC847W BC848W BC849W BC850W BC856AW BC856BW BC856W BC857AW BC860W
Contextual Info: BC856W.BC860W PNP Silicon AF Transistors
For AF input stages and driver applications 3
High current gain
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types: 2 BC846W, BC847W, BC848W 1 BC849W, BC850W NPN

BC846AW

Abstract: BC846W BC847AW BC847W BC848W BC849W BC856W BC859W BC849B
Contextual Info: BC846W . BC849W BC846W . BC849W Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage NPN NPN Version 2006-06-27 2 ±0.1 0.3 1 ±0.1 1 2.1 Type Code 1.25±0.1 ±0.1 3 2 1.3 Dimensions - Maße [mm]

847C

Abstract: BC846W BC847W BC848W BC849W BC850W
Contextual Info: DATA SHEET BC846W,BC847W,BC848W,BC849W,BC850W SERIES NPN GENERAL PURPOSE TRANSISTORS 30/45/65 Volts VOLTAGE 150 mWatts CURRENT SOT-323 Unit: inch mm FEATURES • NPN epitaxial silicon, planar design .087(2.2) .070(1.8) • Collector current IC = 100mA • Both normal and Pb free product are available :

Contextual Info: BC846W . BC849W BC846W . BC849W Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage NPN NPN Version 2006-06-27 2 ±0.1 0.3 1±0.1 1 2.1 Type Code 1.25±0.1 ±0.1 3 2 1.3 Dimensions - Maße [mm]

BC846AW

Abstract: BC846BW BC846CW BC846W BC847W BC848W BC849W BC850AW BC850BW BC850W
Contextual Info: BC846W…BC850W NPN Silicon Epitaxial Planar Transistor for general purpose and switching applications Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage BC846W BC847W BC848W BC849W BC850W VCBO 80 50 30 30 50 V Collector Emitter Voltage

BC850AW

Abstract: BC847W BC846AW BC846BW BC846W BC848W BC849W BC850BW BC850W
Contextual Info: BC846W~850W NPN Silicon Epitaxial Planar Transistor for general purpose and switching applications SOT-323 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage BC846W BC847W BC848W BC849W BC850W VCBO 80 50

Contextual Info: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D102 BC849W; BC850W NPN general purpose transistors Product data sheet Supersedes data of 1997 Jun 20 1999 Apr 12 NXP Semiconductors Product data sheet NPN general purpose transistors BC849W; BC850W FEATURES PINNING

D024-M

Abstract: D024M70 MARKING J1A BC849BW BC849CW BC849W BC850BW BC850CW BC850W SOT323 Marking LE
Contextual Info: bbSB^l Philips Semiconductors ODSMMbö T7T IAPX NPN general purpose transistor amer FEATURES philips Product specification BC849W; BC850W /d i s c r e t e b7E ]> PIN CONFIGURATION • S- mini package. • Low noise DESCRIPTION NPN transistor in a plastic SOT323

BC transistor series

Abstract: BC849W BC856W BC857W BC858W BC859W transistor BC SERIES
Contextual Info: BC856W,BC857W,BC858W,BC859W SERIES PNP GENERAL PURPOSE TRANSISTORS VOLTAGE 200 mWatts CURRENT 30/45/65 Volts SOT-323 Unit: inch mm FEATURES .087(2.2) .070(1.8) • Collector current IC = 100mA • Complimentary (NPN) Devices:BC846W/BC847W/BC848W/ BC849W Series

Contextual Info: BC856W.BC860W PNP Silicon AF Transistors
For AF input stages and driver applications 3
High current gain
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types: 2 BC846W, BC847W, BC848W 1 BC849W, BC850W NPN

Contextual Info: Philips Semiconductors Product specification NPN general purpose transistors FEATURES BC849W; BC850W PINNING • Low current max. 100 mA PIN • Low voltage (max. 45 V). DESCRIPTION 1 APPLICATIONS base 2 emitter 3 collector other audio-frequency equipment.

Contextual Info: BC849W Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)30 I(C) Max. (A) Absolute Max. Power Diss. (W) Minimum Operating Temp (øC) Maximum Operating Temp (øC)150 I(CBO) Max. (A)15n @V(CBO) (V) (Test Condition)30

Q 817

Abstract: str 450 a BC849BW BC849CW BC849W BC850BW BC850CW BC850W BC859W BC860W
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 BC849W; BC850W NPN general purpose transistors Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC04 1997 Jun 20 Philips Semiconductors Product specification

DIN 6784

Abstract: MARKING 3FS BC857 st BC846W BC847W BC848W BC849W BC850W BC856BW BC856W
Contextual Info: BC856W.BC860W PNP Silicon AF Transistors • For AF input stages and driver applications 3 • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: 2 BC846W, BC847W, BC848W 1 BC849W, BC850W NPN

BC846AW

Abstract: BC846BW BC846CW BC846W BC847W BC848W BC849W BC850AW BC850BW BC850W
Contextual Info: BC846W~BC850W NPN Silicon Epitaxial Planar Transistor for general purpose and switching applications Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage BC846W BC847W BC848W BC849W BC850W VCBO 80 50 30 30 50 V Collector Emitter Voltage

BC846AW

Abstract: BC846BW BC846CW BC846W BC847W BC848W BC849W BC850AW BC850BW BC850W
Contextual Info: BC846W…BC850W NPN Silicon Epitaxial Planar Transistor for general purpose and switching applications Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage BC846W BC847W BC848W BC849W BC850W VCBO 80 50 30 30 50 V Collector Emitter Voltage

BC846AW

Abstract: BC846W BC847AW BC847W BC848W BC849W BC856W BC859W
Contextual Info: BC846W . BC849W BC846W . BC849W Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage NPN NPN Version 2011-07-07 2 ±0.1 0.3 1 ±0.1 Type Code 1 1.25±0.1 2.1±0.1 3 2 1.3 Dimensions - Maße [mm]

BC849BW

Abstract: BC849CW BC849W BC850BW BC850CW BC850W BC859W BC860W
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D102 BC849W; BC850W NPN general purpose transistors Product data sheet Supersedes data of 1997 Jun 20 1999 Apr 12 NXP Semiconductors Product data sheet NPN general purpose transistors BC849W; BC850W FEATURES

BC846AW

Abstract: BC846BW BC846CW BC846W BC847W BC848W BC849W BC850AW BC850BW BC850W
Contextual Info: BC846W~BC850W NPN Silicon Epitaxial Planar Transistor for general purpose and switching applications SOT-323 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage BC846W BC847W BC848W BC849W BC850W VCBO 80

C847B

Abstract: BC846W BC847W BC848W BC849W BC850W sot-323 marking 46B
Contextual Info: DATA SHEET BC846W,BC847W,BC848W,BC849W,BC850W SERIES NPN GENERAL PURPOSE TRANSISTORS 30/45/65 Volts VOLTAGE 150 mWatts CURRENT SOT-323 Unit: inch mm FEATURES • NPN epitaxial silicon, planar design .087(2.2) .070(1.8) • Collector current IC = 100mA • In compliance with EU RoHS 2002/95/EC directives

transistor Ba 850c

Contextual Info: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Jun 20 Philips Sem iconductors 1999 Apr 12 PHILIPS Philips Semiconductors Product specification BC849W; BC850W NPN general purpose transistors FEATURES PINNING • Low curren t max. 100 mA