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    BCP5616TA Price and Stock

    Diodes Incorporated BCP5616TA

    TRANS NPN 80V 1A SOT223-3
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    DigiKey BCP5616TA Cut Tape 2,607 1
    • 1 $0.26
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    • 100 $0.26
    • 1000 $0.092
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    BCP5616TA Digi-Reel 2,607 1
    • 1 $0.26
    • 10 $0.178
    • 100 $0.26
    • 1000 $0.092
    • 10000 $0.092
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    BCP5616TA Reel 2,000 1,000
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    • 1000 $0.08273
    • 10000 $0.06057
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    Avnet Americas BCP5616TA Reel 8 Weeks 1,000
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    Mouser Electronics BCP5616TA 234
    • 1 $0.22
    • 10 $0.15
    • 100 $0.092
    • 1000 $0.082
    • 10000 $0.072
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    Arrow Electronics BCP5616TA 2,150,000 8 Weeks 1,000
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    • 1000 $0.0718
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    BCP5616TA Cut Strips 710 8 Weeks 1
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    Newark BCP5616TA Bulk 12,950 5
    • 1 $0.27
    • 10 $0.185
    • 100 $0.124
    • 1000 $0.096
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    Future Electronics BCP5616TA Reel 8 Weeks 1,000
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    BCP5616TA Reel 8 Weeks 1,000
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    TME BCP5616TA 2,569 1
    • 1 $0.3589
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    • 100 $0.1256
    • 1000 $0.0718
    • 10000 $0.0585
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    Ameya Holding Limited BCP5616TA 1,396
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    Chip 1 Exchange BCP5616TA 194,666
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    Avnet Asia BCP5616TA 8 Weeks 5,000
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    Avnet Silica BCP5616TA 1,425,000 10 Weeks 1,000
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    New Advantage Corporation BCP5616TA 488,000 1
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    • 10000 $0.055
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    Zetex / Diodes Inc BCP5616TA

    Trans GP BJT NPN 80V 1A 2000mW 4-Pin(3+Tab) SOT-223 T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical BCP5616TA 6,120,000 3,000
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    BCP5616TA 2,150,000 1,000
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    • 1000 $0.0723
    • 10000 $0.0485
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    BCP5616TA 710 157
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    • 1000 $0.0393
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    BCP5616TA Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BCP5616TA Zetex Semiconductors Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN MED PWR 80V 1A SOT223 Original PDF

    BCP5616TA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PTFA091503EL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 150 W, 920 – 960 MHz Description The PTFA091503EL is a 150-watt, internally-matched FET intended for use in power ampliier applications in the 920 to 960 MHz band.


    Original     		PDF PTFA091503EL PTFA091503EL 150-watt, H-33288-6

    TRANSISTOR tl131

    Abstract: tl239
    Text: PTFB082817FH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 280 W, 30 V, 791 – 821 MHz Description The PTFB082817FH is a LDMOS FET intended for use in multistandard cellular power ampliier applications. Features include


    Original     		PDF PTFB082817FH PTFB082817FH H-34288-4/2 TRANSISTOR tl131 tl239

    TL272

    Abstract: TL184 TL181 tl271 TL308 Tl187 transistor tl274 TL293 TL193 TL148
    Text: PTMA080304M Confidential, Limited Internal Distribution Dual Wideband RF LDMOS Power Amplifier 30 W 2 x 15 W , 28 V, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use


    Original     		PDF PTMA080304M PTMA080304M 20-lead PG-DSO-20-63 TL272 TL184 TL181 tl271 TL308 Tl187 transistor tl274 TL293 TL193 TL148

    PTFB090901

    Abstract: TL127 PTFB090901EA 569w PTFB090901FA 100B4R7BW500X PCC104BCTND PCC104bct-nd TRANSISTOR c104 TRANSISTOR c801
    Text: PTFB090901EA PTFB090901FA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier


    Original     		PDF PTFB090901EA PTFB090901FA PTFB090901FA 90-watt H-36265-2 H-37265-2 PTFB090901 TL127 569w 100B4R7BW500X PCC104BCTND PCC104bct-nd TRANSISTOR c104 TRANSISTOR c801

    BCP56TA

    Abstract: BCP55-16 BCP51 BCP5516TA bcp54ta BCP5410
    Text: BCP 54 / 55 / 56 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223 Features • • • • • • • • Mechanical Data • • IC = 1A Continuous Collector Current Low Saturation Voltage VCE sat < 500mV @ 0.5A Gain groups 10 and 16 Epitaxial Planar Die Construction


    Original     		PDF OT223 500mV BCP51, AEC-Q101 J-STD-020 DS35367 BCP56TA BCP55-16 BCP51 BCP5516TA bcp54ta BCP5410

    TRANSISTOR tl131

    Abstract: ptfb192503 tl134 TL105B PTFB182503FL TL231 PTFB192503EL V1 c103 TRANSISTOR RO4350 TL117
    Text: PTFB182503EL PTFB182503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications


    Original     		PDF PTFB182503EL PTFB182503FL PTFB182503EL PTFB182503FL 240-watt TRANSISTOR tl131 ptfb192503 tl134 TL105B TL231 PTFB192503EL V1 c103 TRANSISTOR RO4350 TL117

    PTFB090901EA

    Abstract: No abstract text available
    Text: PTFB090901EA PTFB090901FA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier


    Original     		PDF PTFB090901EA PTFB090901FA PTFB090901EA PTFB090901FA 90-watt H-37265-2

    DMN62D4SDW-7

    Abstract: ANALOG DEVICES ASSEMBLY DATE CODE Analog devices assembly code marking Information DMG2307L Analog devices marking Information Analog devices marking DMN2027USS-13 a/ANALOG DEVICES ASSEMBLY DATE CODE TL432BSA-7 DJT4031N
    Text: DATE: 29th April, 2013 PCN #: 2094 – Rev01 PCN Title: Qualification of "Diodes Technology Cheng Du Company Limited" (DTC) as an Additional Assembly & Test Site for SOP-8, SOT-23, SOT223, SOT-323, SOT-363, SSOT-23, and SOD-323 Packaged Parts,


    Original     		PDF Rev01 OT-23, OT223, OT-323, OT-363, SSOT-23, OD-323 PCN-2061 PCN-2070. OD-323 DMN62D4SDW-7 ANALOG DEVICES ASSEMBLY DATE CODE Analog devices assembly code marking Information DMG2307L Analog devices marking Information Analog devices marking DMN2027USS-13 a/ANALOG DEVICES ASSEMBLY DATE CODE TL432BSA-7 DJT4031N

    Untitled

    Abstract: No abstract text available
    Text: DATE: 13th January, 2015 INFORMATIONAL PCN #: 2166 (REV 01) PCN Title: Addition of Date Code Information to Part Marking Dear Customer: This is an announcement of change(s) to products that are currently being


    Original     		PDF ackT1951GTAÂ ZX5T849GTAÂ ZX5T851GTAÂ ZX5T853GTAÂ ZX5T949GTAÂ ZX5T951GTCÂ ZX5T951GTAÂ ZX5T953GTAÂ ZX5T955GTAÂ ZXM62N03GTAÂ

    Untitled

    Abstract: No abstract text available
    Text: DATE: 28th November, 2012 PCN #: 2041 REV 02 PCN Title: Conversion to Copper Bond Wire on Selected Discrete Products Dear Customer: This is an announcement of change s to products that are currently being


    Original     		PDF ZXMN2B14FHÂ ZXMN2F30FHÂ ZXMN2F34FHÂ ZXMN3A01FÂ ZXMN3A02N8Â ZXMN3A04DN8Â ZXMN3A06DN8Â ZXMN3A14FÂ ZXMN3B01FÂ ZXMN3B04N8Â

    TL139

    Abstract: PTFB183404 PTFB183404EF TL148 TRANSISTOR tl131 TL162 TL170 tl172 c105 TRANSISTOR TL145
    Text: PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 340 W, 1805 – 1880 MHz Description The PTFB183404F is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to


    Original     		PDF PTFB183404F PTFB183404F 340-watt H-37275-6/2 TL139 PTFB183404 PTFB183404EF TL148 TRANSISTOR tl131 TL162 TL170 tl172 c105 TRANSISTOR TL145

    PTFB192503EL

    Abstract: ATC100A8R2BW150XB c103 TRANSISTOR tl131 TRANSISTOR c104 C802 C803 R250 587-1818-2-ND TL231
    Text: PTFB192503EL PTFB192503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz Description The PTFB192503EL and PTFB192503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier


    Original     		PDF PTFB192503EL PTFB192503FL PTFB192503EL PTFB192503FL 240-watt H-33288-6 H-34288-4/2 ATC100A8R2BW150XB c103 TRANSISTOR tl131 TRANSISTOR c104 C802 C803 R250 587-1818-2-ND TL231

    PTFB192503EL V1

    Abstract: No abstract text available
    Text: PTFB192503EL PTFB192503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz Description The PTFB192503EL and PTFB192503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power ampliier


    Original     		PDF PTFB192503EL PTFB192503FL PTFB192503EL PTFB192503FL 240-watt H-33288-6 H-34288-4/2 PTFB192503EL V1

    Untitled

    Abstract: No abstract text available
    Text: PTFB182503EL PTFB182503FL Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power ampliier applications in the 1805 to 1880 MHz frequency band. Features include input


    Original     		PDF PTFB182503EL PTFB182503FL PTFB182503EL PTFB182503FL 240-watt H-33288-6 H-34288-4/2

    BCP5616QTA

    Abstract: AECQ-101 5616 BCP5410
    Text: BCP 54/ 55/ 56 NPN MEDIUM POWER TRANSISTORS IN SOT223 Features Mechanical Data • BVCEO > 45V, 60V & 80V • • IC = 1A high Continuous Collector Current • Case Material: Molded Plastic. “Green” Molding Compound. • ICM = 2A Peak Pulse Current •


    Original     		PDF OT223 500mV BCP51, AEC-Q101 OT223 J-STD-020 MIL-STD-202, DS35367 BCP5616QTA AECQ-101 5616 BCP5410

    Untitled

    Abstract: No abstract text available
    Text: PTFA091203EL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091203EL is a 120-watt, internally-matched FET intended for use in power ampliier applications in the 920 to 960 MHz band.


    Original     		PDF PTFA091203EL PTFA091203EL 120-watt, H-33288-6

    TL139

    Abstract: TL205 PTFB183404 ptfb183404f transistor TL131
    Text: PTFB183404E PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistors 340 W, 1805 – 1880 MHz Description The PTFB183404E and PTFB183404F are 340-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications


    Original     		PDF PTFB183404E PTFB183404F PTFB183404F 340-watt H-36275-8 H-37275-6/2 TL139 TL205 PTFB183404 transistor TL131

    TL272

    Abstract: tl271 TL274 5228 voltage regulator TL279 TL246 c221 TRANSISTOR TL-250 tl2741 HD 1077 O
    Text: PTFB201402FC Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 – 2025 MHz Description The PTFB201402FC integrates two 70 W LDMOS FETs into one open-cavity ceramic package. It is designed primarily for Doherty


    Original     		PDF PTFB201402FC PTFB201402FC H-37248-4 17ubstances. TL272 tl271 TL274 5228 voltage regulator TL279 TL246 c221 TRANSISTOR TL-250 tl2741 HD 1077 O

    TL2012

    Abstract: TRANSISTOR tl131 C801 C802 C803 R250 8C802 tl1252 TL1-16 ATC 221
    Text: PTFB211503EL PTFB211503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz Description The PTFB211503EL and PTFB211503FL are thermally-enhanced, 150-watt, LDMOS FETs designed for cellular power amplifier


    Original     		PDF PTFB211503EL PTFB211503FL PTFB211503EL PTFB211503FL 150-watt, TL2012 TRANSISTOR tl131 C801 C802 C803 R250 8C802 tl1252 TL1-16 ATC 221

    AP3039AM

    Abstract: 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502
    Text: Diodes Incorporated RoHS & REACH Compliance Re: End of Vehicle Life Directive EVL 2000/53/EC and Annex II (EVL II) 2000/53/EC Restrictions of Hazardous Substances Directive (RoHS) 2002/95/EC (repealed as from 3 January 2013 but listed here for completeness) & 2011/65/EU (RoHS II)


    Original     		PDF 2000/53/EC 2000/53/EC 2002/95/EC 2011/65/EU SOR/2014-254 SJ/T11363-2006 GL-106 AP3039AM 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502

    TL117

    Abstract: c103 TRANSISTOR DATA TL130 TRANSISTOR tl131 BCP5616TA c103 TRANSISTOR TL131 TRANSISTOR c104 C801 C802
    Text: PTFB211503EL PTFB211503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz Description The PTFB211503EL and PTFB211503FL are thermally-enhanced, 150-watt, LDMOS FETs designed for cellular power amplifier


    Original     		PDF PTFB211503EL PTFB211503FL PTFB211503EL PTFB211503FL 150-watt, TL117 c103 TRANSISTOR DATA TL130 TRANSISTOR tl131 BCP5616TA c103 TRANSISTOR TL131 TRANSISTOR c104 C801 C802

    TRANSISTOR tl131

    Abstract: C805 capacitor C207 capacitor ATC200B103MW LM78L05ACM-ND TL131 LM78L05ACMND TL228 capacitor 471 c103 TRANSISTOR
    Text: PTFA091203EL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091203EL is a 120-watt, internally-matched FET intended for use in power amplifier applications in the 920 to 960 MHz band.


    Original     		PDF PTFA091203EL PTFA091203EL 120-watt, H-33288-4/2 TRANSISTOR tl131 C805 capacitor C207 capacitor ATC200B103MW LM78L05ACM-ND TL131 LM78L05ACMND TL228 capacitor 471 c103 TRANSISTOR

    BCP5616

    Abstract: BCP5410
    Text: BCP 54 / 55 / 56 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223 Mechanical Data Features • • • • • • • • • • IC = 1A Continuous Collector Current Low Saturation Voltage VCE sat < 500mV @ 0.5A Gain groups 10 and 16 Epitaxial Planar Die Construction


    Original     		PDF OT223 500mV BCP51, AEC-Q101 J-STD-020 DS35367 BCP5616 BCP5410

    tl136

    Abstract: TRANSISTOR tl131 LM78L05ACM-ND LM78L05ACMND TL127 3882 PTFA091203EL
    Text: PTFA091203EL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091203EL is a 120-watt, internally-matched FET intended for use in power amplifier applications in the 920 to 960 MHz band.


    Original     		PDF PTFA091203EL PTFA091203EL 120-watt, H-33288-6 tl136 TRANSISTOR tl131 LM78L05ACM-ND LM78L05ACMND TL127 3882