BCP69 Search Results

Contextual Info: UTC BCP69 PNP EPITAXIAL SILICON TRANSISTOR PNP MEDIUM POWER TRANSISTOR FEATURES * High current max. 1 A * Low voltage (max. 20 V). * Complementary to UTC BCP69 APPLICATIONS * General purpose switching and amplification * Power applications such as audio output stages.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BCP69 PNP EPITAXIAL SILICON TRANSISTOR PNP MEDIUM POWER TRANSISTOR FEATURES * High current max. 1 A * Low voltage (max. 20 V). * Complementary to UTC BCP68 1 SOT-223 APPLICATIONS * General purpose switching and amplification

BCP68

Abstract: BCP69 BCP69-16 BCP69-25 transistor bcp69
Contextual Info: Philips Semiconductors Product specification PNP medium power transistor BCP69 FEATURES PINNING • High current max. 1 A PIN • Low voltage (max. 20 V). DESCRIPTION 1 base 2, 4 APPLICATIONS collector 3 emitter • General purpose switching and amplification

NPN SOT23-6

Abstract: ZDT1049 DUAL NPN SOT23-6 zdt6790 fzt849 WDFN3 BCP6825 ZXTBM322 sot223 transistor sot23
Contextual Info: Zetex Device BCP6825 BCP6925 BCV27 BCW66H BCW68H BCX17 BCX19 BCX6825 BCX6916 BCX6925 FCX1047A FCX1051A FCX1147A FCX1149A FCX1151A FCX491A FCX589 FCX591A FCX617 FCX619 FCX688B FCX690B FCX717 FCX718 FCX789A FCX790A FMMT449 FMMT489 FMMT491A FMMT549 FMMT549A FMMT589

BCP69

Abstract: cib34
Contextual Info: BCP69 PNP Silicon Epitaxial Transistor COLLECTOR 2, 4 P b Lead Pb -Free 4 1.BASE 2.COLLECTOR 3.EMITTER 4.COLLECTOR BASE 1 2 3 SOT-223 3 EMITTER ABSOLUTE MAXIMUM RATINGS (TA=25 C) Rating 1 Symbol Value Unit Collector to Base Voltage VCBO -25 V Collector to Emitter Voltage

BCP68

Abstract: BCP69T1 BCP69T3 BCP69T1-D
Contextual Info: ON Semiconductort BCP69T1 PNP Silicon Epitaxial Transistor ON Semiconductor Preferred Device This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT-223 package, which is designed for medium power surface

sot223-4

Abstract: sot-223-4 2234
Contextual Info: BCP69T1 Preferred Device PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT−223−4 package, which is designed for medium power surface mount applications.

Contextual Info: • b 1353131 00E453Q 8H2 « A P X N. AMER PHILIPS/DISCRETE BCP69 b7E ]> J V SILICON PLANAR EPITAXIAL TRANSISTOR PNP transistor in a plastic microminiature envelope, intended for low-voltage, high-current LF applications. QUICK REFERENCE DATA Collector-emitter voltage VgE = 0

sot223-4

Abstract: BCP69T1 BCP69T3 Pb-Free Marking Codes BCP68 BCP69T1G
Contextual Info: BCP69T1 Preferred Device PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT−223−4 package, which is designed for medium power surface mount applications.

Contextual Info: BCP69; BC869; BC69PA 20 V, 2 A PNP medium power transistors Rev. 7 — 12 October 2011 Product data sheet 1. Product profile 1.1 General description PNP medium power transistor series in Surface-Mounted Device SMD plastic packages. Table 1. Product overview

Contextual Info: SOT223 NPN SILICON PLANAR M EDIU M POWER TRANSISTOR ISSUE 3 - FEBRUARY 1996 O_ FEATURES * Suitable for A F drivers and output stages * High collector current and Low V CE sat C O M P L E M E N T A R Y TY PE - BCP69 P A R T M A R K IN G D E T A IL -

Contextual Info: BCP69. PNP Silicon AF Transistor • For general AF applications • High collector current 4 3 2 • High current gain 1 • Low collector-emitter saturation voltage • Complementary type: BCP68 NPN Type Marking Pin Configuration Package BCP69-16 .-16*

Contextual Info: M OTOROLA SEM ICO NDU CTO R TECHNICAL DATA BCP69T1 PNP Silicon Epitaxial Transistor Motorola Preferred Devio# T his P N P Silicon Epitaxial Transistor is designed for u se in low voltage, high current applications. T he device is h o u se d in the S O T -2 2 3 package, which is

BCP68

Abstract: BCP69T1 BCP69T1G
Contextual Info: BCP69T1 PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT−223 package, which is designed for medium power surface mount applications. Features

Contextual Info: UNISONICTECHNOLOGIESCO., LTD BCP68 NPN SILICON TRANSISTOR N PN M EDI U M POWER T RAN SI ST OR ̈ FEAT U RES * High current max. 1 A * Low voltage (max. 20 V). * Complementary to UTC BCP69 1 SOT-223 ̈ APPLI CAT I ON S * General purpose switching and amplification under high current

BCP69

Abstract: SC-73
Contextual Info: Spec. No. : C314L3 Issued Date : 2005.09.29 Revised Date : 2006.01.11 Page No. : 1/4 CYStech Electronics Corp. Medium Power PNP Epitaxial Planar Transistor BCP69L3 Features • For AF driver and output stage • Low saturation voltage • High collector current.

BCP69

Contextual Info: BCP69 BCP69 PNP General Purpose Amplifier 4 • This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.0A. • Sourced from Process 77. 3 2 1 SOT-223 1. Base 2.4. Collector 3. Emitter Absolute Maximum Ratings * TC=25°C unless otherwise noted

Contextual Info: BCP69 SILICON PLANAR EPITAXIAL TRANSISTOR PNP transistor in a plastic m icrominiature package, intended fo r low-voltage, high-current LF applications. QUICK REFERENCE DATA Collector-em itter voltage V g£ = 0 -V C E S Collector-emitter voltage (open base)

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BCP68 NPN SILICON TRANSISTOR NPN MEDIUM POWER TRANSISTOR „ FEATURES * High current max. 1 A * Low voltage (max. 20 V). * Complementary to UTC BCP69 „ 1 SOT-223 APPLICATIONS * General purpose switching and amplification under high current

sot-223 body marking D K Q F

Contextual Info: Order this data sheet by BCP69T1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA BCP69T1 PNP Silicon Epitaxial Transistor Motorola Preferred Device This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT-223 package, which is designed for

Contextual Info: Not Recommended for New Design Please Use FZT489 SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR BCP68 ISSUE 3 – FEBRUARY 1996 ✪ FEATURES * Suitable for AF drivers and output stages * High collector current and Low VCE sat COMPLEMENTARY TYPE – BCP69

bcp69

Abstract: BCP68 BCP69-25 FMMT549
Contextual Info: SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR BCP69 ISSUE 3 – FEBRUARY 1996 ✪ FEATURES * For AF drivers and output stages * High collector current and Low VCE sat COMPLEMENTARY TYPE – BCP68 PARTMARKING DETAIL – BCP69 BCP69 – 25 C E C B ABSOLUTE MAXIMUM RATINGS.

Contextual Info: SOT223 PIMP SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 3 - FEBRUARY 1996 FEATURES * For AF d riv e rs and o u tp u t stages 4 H igh c o lle c to r c u rre n t a nd Lo w Vr&1 C O M PLEM ENTARY TYPE BCP68 PARTM ARKING DETAIL BCP69 BCP69 - 25 ABSOLUTE MAXIMUM RATINGS.

bcp68

Contextual Info: BCP68 SOT-223 Transistor NPN 1. BASE SOT-223 2. COLLECTOR 1 3. EMITTER Features — — — — — For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary type: BCP69 (PNP) MAXIMUM RATINGS (TA=25℃ unless otherwise noted)