BCR 1 L 12 Search Results

marking code sot-23 697

Abstract: marking code sot23 697
Contextual Info: SIEMENS BCR 169 PNP S ilicon D igital Transistor * Switching circuit, inverter, interface circuit, driver circuit * Built in bias resistor R1 = 4.7kiî F L nr W Type Marking Ordering Code Pin C onfiguration BCR 169 WSs 1=B Q62702-C2340 Package 2=E 3=C SOT-23

562 sot23

Abstract: Transistor Bo 47
Contextual Info: SIEMENS BCR 562 PNP Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit >Built in bias resistor Ri=4.7kQ, R2=4.7k£i ÍZ L Type Marking Ordering Code Pin Configuration B C R 562 XUs 1=B Q62702-C2356 Package 2=E 3=C

Contextual Info: [oioia T-1 PCB MOUNT LEDi Dual-Stackei Data Display Products F o r D e ta ile d L E D D a ta , S e e D is c re te S e c tio n , M O D E L 12: Top LED PCT125 | Right Angle Mount -ER -ECR -EWR -PCR -RQ -BR -BCR -EA -ECA -EWA -PCA -AQ -BA -BCA -EAY -ECAY -EWAY

BCR16HM

Abstract: BCR16HM-4 BCR16HM-10 BCR16HM-12 BCR16HM-6 BCR16HM-8
Contextual Info: - 185 L f f i f r h b :s 3 > •-<1- V h O ^ "7 im -f- — : - * i b j , a c 2200V i f t m n S lH tttt t .= Œ : ( 2 5*0 ¡01] I drm Vtm B C R 1 6 H M -4 BCR 1 6 H M -6 BC R 1 6 H M -8 BCR16HM -10 B CR16H M -12 V dsm 300 400 600 700 800 V drm 200 300 400

BCR10EM-10

Abstract: TA8250 BCR10AM-4 BCR10AM BCR10AM-8 BCR10AM-12 BCR10AM-10 BCR10EM-6 BCR10EM-8 BCR10EM-4
Contextual Info: 178 - — H B C R 1O AM • * » 0 # ^ o f K í/ c f t iT r W f f i R f f l O if 7 ¿ ï^ f t iïr iiJM (L ffl) W h h 3 > 0 £ 7 ) W i - ^ K f lt & iW .m .) i-fc • i E ■ * * Ä # BCR 1 0 AM -6 B C R 1 0 A M -8 BCR10AM -10 Vd s m 300 400 600 700 800

W967d6hb

Abstract: W967 CRAM 256mb
Contextual Info: W967D6HB 128Mb Async./Page,Syn./Burst CellularRAM 1. GENERAL DESCRIPTION Winbond CellularRAM products are high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications. The device has a DRAM core organized. These devices include an industrystandard burst mode Flash interface that dramatically increases read/write bandwidth compared with other lowpower SRAM or Pseudo SRAM offerings.

Contextual Info: 128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Features Async/Page/Burst CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages – 1.70–1.95V VCC – 1.7–3.3V1 VCCQ

Contextual Info: 128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Features Async/Page/Burst CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages: 1.7V–1.95V VCC 1.7V–3.3V1 VCCQ • Random access time: 70ns

Contextual Info: W957D6HB 128Mb Async./Burst/Sync./A/D MUX 1. GENERAL DESCRIPTION Winbond x16 ADMUX products are high-speed, CMOS pseudo-static random access memory developed for lowpower, portable applications. The device has a DRAM core organized. These devices are a variation of the industrystandard Flash control interface, with a multiplexed address/data bus. The multiplexed address and data functionality

Contextual Info: 128 Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Features Async/Page/Burst CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages: 1.7V–1.95V VCC 1.7V–3.3V1 VCCQ

MT45W8MW16BGX

Abstract: MT45W8MW16BGX-701LWT BDQ8 CSP3-20
Contextual Info: 8 MEG x 16 ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY 128Mb BURST CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: Ball Assignment 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • Vcc, VccQ Voltages 1.7V–1.95V Vcc 1.7V–1.95V VccQ

8CR1

Abstract: BCR1 bcr resistor
Contextual Info: MODEL SERIES BCR Thick Film Chip Resistors • m m m .ii." J i i m im • Seven Styles/Six Power Ratings Available - Including the popular 0402, 0603, 0805 and 1206 versions ■Tight Dimensional Tolerances - Ensure reliable high yield board assembly 1Nickel Barrier Terminations - For long term solder joint reliability

BCR100

Contextual Info: 70 128Mb/64Mb Async/Page/Burst CellularRAM 1.5 Memory Figure 1: Features • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages: 1.7V–1.95V VCC 1.7V–1.95V VCCQ • Random access time: 70ns • Burst mode READ and WRITE access:

cr1 5 p26z

Contextual Info: 128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Features Async/Page/Burst CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages: – 1.7V–1.95V VCC – 1.7V–3.3V1 VCCQ

BCR100

Contextual Info: PRELIMINARY‡ 8 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY 128Mb BURST CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: Ball Assignment 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • Vcc, VccQ Voltages 1.7V–1.95V Vcc

BCR10

Abstract: M69KB128AB
Contextual Info: M69KB128AB 128 Mbit 8Mb x16 1.8V Supply, Burst PSRAM Preliminary Data Feature summary • Supply Voltage – VCC = 1.7 to 1.95V core supply voltage – VCCQ = 1.7 to VCC for I/O buffers ■ User-selectable Operating Modes – Asynchronous Modes: Random Read, and

synchronous nor flash

Abstract: BCR10 M69KB128AB bcr100
Contextual Info: M69KB128AB 128 Mbit 8Mb x16 1.8 V Supply, Burst PSRAM Preliminary Data Feature summary • Supply voltage – VCC = 1.7 to 1.95 V core supply voltage – VCCQ = 1.7 to VCC for I/O buffers ■ User-selectable operating modes – Asynchronous modes: Random Read, and

Contextual Info: M69KB128AA 128 Mbit 8Mb x16 1.8V Supply, Burst PSRAM PRELIMINARY DATA Features summary • SUPPLY VOLTAGE – VCC = 1.7 to 1.95V core supply voltage – VCCQ = 1.7 to 1.95V for I/O buffers ■ USER-SELECTABLE OPERATING MODES – Asynchronous Modes: Random Read, and

M69KB128AA

Abstract: BCR10
Contextual Info: M69KB128AA 128 Mbit 8Mb x16 1.8V Supply, Burst PSRAM PRELIMINARY DATA Features summary • SUPPLY VOLTAGE – VCC = 1.7 to 1.95V core supply voltage – VCCQ = 1.7 to 1.95V for I/O buffers ■ USER-SELECTABLE OPERATING MODES – Asynchronous Modes: Random Read, and

BCR16GM-8

Abstract: BCR16AM BCR16BM-4 BCR16GM BCR16GM-12 BCR16AM-4 BCR16AM-6 BCR16FM BCR16AM-8 BCR16FM-6
Contextual Info: - 183 6 A M .B C R I6 BM B C R I o m K & m w m o W i i , '^ > 7 • r s m t (lja ) (B C R MT (BC R 16 B M ) B C R 16 A M -6 6 A M -4 16 B M -4 B C R 16 B M -6 300 400 200 300 16 ( 7 V = 99 *C,i 8 S r c J § f c f t ) 170 ( 6 0 H z , I E & £ i £ l 121 ( 6 0 H z , ¥ i S l - » M ? > u )

digital transistor array

Abstract: marking 702 sot363
Contextual Info: SIEMENS BCR 169S PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit • Two galvanic internal isolated Transistors in one package • Built in bias resistor (R1=4.7kQ) Cl U 12 FI FI FI U lii ÜJ Type Marking Ordering Code Pin Configuration

A19 SMD transistor

Abstract: HYE18P32160AC HYE18P32160AW-15
Contextual Info: Data Sheet, V2.2, July 2004 HYE18P32160AW-12.5 HYE18P32160AW-15 32M Synchronous Burst CellularRAM CellularRAM Memory Products N e v e r s t o p t h i n k i n g . Data Sheet, V2.2, July 2004 HYE18P32160AW-12.5 HYE18P32160AW-15 32M Synchronous Burst CellularRAM

Contextual Info: um Cermet Chip Resistors Series BC AC FEATURES _ • Standard Sizes BC - 1206 AC - 0805 • 1%, 2%, 5% tolerance • ±100PPM/°C, ± 200PPM /°C, ± 300PPM /°C • Zero ohm jumper • Cermet Resistance Element • High Purity Alumina Substrate

CR20AM

Abstract: cr25a CR30GM m6mo BCR25LM 16Lm 10-PM
Contextual Info: # Low and medium power Max. ratings peak Type No. Electrical characteristics Surge Rspetitlve fflsettieefKBreflt joncScur Gate Gate twpeatae frigger current triggervottaga ler : y*T max Package T( fc > 125 (V)‘ 0.0 (Ta = 40°C) w 8 (I,1 ,1 ) 5 ( IV ) 1 0