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    Infineon Technologies AG BCR-112F-E6327

    TRANS PREBIAS NPN 50V TSFP-3
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    DigiKey BCR-112F-E6327 Reel 39,000
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    BCR112F Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BCR112F Infineon Technologies NPN Silicon Digital Transistor Original PDF
    BCR112FE6327 Infineon Technologies TRANS DIGITAL BJT NPN 50V 100MA 3TSFP-3 T/R Original PDF
    BCR112FE6327 Infineon Technologies Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 250MW TSFP-3 Original PDF
    BCR 112F E6327 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - TRANS PREBIAS NPN 250MW TSFP-3 Original PDF

    BCR112F Datasheets Context Search

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    BFP620F

    Abstract: TSFP-4 BFR34* transistor BC848BF BA892-07F BAT62-07F BAS40-04F Infineon Technologies transistor 4 ghz BAR63-07F BAV70F
    Text: P B R O D U C T R I E F A new Milestone in Miniaturization of SMD Standard Packages for Discrete Components TSFP stands for Thin Small Flat Package. With a reduced height of max. 0.59 mm vs. 0.8 mm for a SC-75 package and an outline of only 1.2 x 1.2 mm2 for TSFP-3 (vs. 1.6 × 1.6 mm2 for


    Original     		PDF SC-75 SC-75) B114-H7900-X-X-7600 BFP620F TSFP-4 BFR34* transistor BC848BF BA892-07F BAT62-07F BAS40-04F Infineon Technologies transistor 4 ghz BAR63-07F BAV70F

    WFs transistor

    Abstract: WFs SOT23 BCR112 BCR112F BCR112L3 BCR112T BCR112U BCR112W
    Text: BCR112. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kΩ, R2=4.7kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package


    Original     		PDF BCR112. BCR112/F/L3 BCR112T/W BCR112U EHA07174 EHA07184 BCR112 BCR112F BCR112L3 BCR112T WFs transistor WFs SOT23 BCR112 BCR112F BCR112L3 BCR112T BCR112U BCR112W

    WFs transistor

    Abstract: SOT323 WF BCR112U E6327 BCR112 BCR112F BCR112L3 BCR112T BCR112W infineon marking code B2 SOT23
    Text: BCR112. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kΩ, R2=4.7kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package


    Original     		PDF BCR112. BCR112/F/L3 BCR112T/W BCR112U EHA07174 EHA07184 BCR112 BCR112F BCR112L3 BCR112T WFs transistor SOT323 WF BCR112U E6327 BCR112 BCR112F BCR112L3 BCR112T BCR112W infineon marking code B2 SOT23

    Untitled

    Abstract: No abstract text available
    Text: BCR112. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kΩ, R2=4.7kΩ • BCR112U: Two internally isolated transistors with good matching in one multichip package • BCR112U: For orientation in reel see


    Original     		PDF BCR112. BCR112U: BCR112/F/L3 BCR112T/W BCR112U EHA07184 EHA07174 BCR112 BCR112F

    BCR108W

    Abstract: BCR112 BCR112F BCR112U BCR112W BCW66 WFs transistor bcr1 WFs SOT23
    Text: BCR112. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kΩ, R2=4.7kΩ • BCR112U: Two internally isolated transistors with good matching in one multichip package • BCR112U: For orientation in reel see


    Original     		PDF BCR112. BCR112U: BCR112/F BCR112W EHA07184 BCR112 BCR112F OT323 BCR108W BCR112 BCR112F BCR112U BCR112W BCW66 WFs transistor bcr1 WFs SOT23

    WFs transistor

    Abstract: WFs SOT23
    Text: BCR112. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kΩ, R2=4.7kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package


    Original     		PDF BCR112. BCR112/F/L3 BCR112T/W BCR112U EHA07184 EHA07174 BCR112 BCR112F BCR112L3 BCR112T WFs transistor WFs SOT23