BCV46 Search Results

BCV26

Abstract: BCV27 BCV46 BCV47
Contextual Info: BCV26, BCV46 PNP Darlington Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage PNP Version 2004-01-20 Power dissipation – Verlustleistung Plastic case Kunststoffgehäuse 1.1 2.9 ±0.1 0.4

SOT23 BCV 27

Abstract: fgs npn marking BCV BCV26 BCV27 BCV46 BCV47 marking BCV H
Contextual Info: BCV27, BCV47 NPN Silicon Darlington Transistors • For general AF applications 2 3 • High collector current 1 • High current gain • Complementary types: BCV26, BCV46 PNP • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 Type

BCV26

Abstract: BCV46 MAX4080
Contextual Info: • ^53^31 00 BM 53 5 304 H A P X N AUER P H I L I P S / D I S C R E T E L7E T> BCV26 BCV46 SILICON PLANAR DARLINGTON TRANSISTOR P-N-P silico n planar d a rlin g to n tran sisto r in a plastic SO T23 envelope N-P-N co m plem ent is B C V 2 7 /4 7 . Q U IC K R E F E R E N C E D A T A

Contextual Info: BCV26, BCV46 PNP Silicon Darlington Transistors 3
For general AF applications
High collector current
High current gain
Complementary types: BCV27, BCV47 NPN 2 1 Type Marking Pin Configuration BCV26 FDs 1=B 2=E 3=C SOT23 BCV46 FEs 1=B 2=E 3=C SOT23

BC516

Abstract: BC517
Contextual Info: Transistors For complete package outlines, refer to pages PO-1 through PO-6 Darlington Transistors Type M axim um R atings N=NPN P=PNP BCP28 BCP29 BCP48 BCP49 BCV26 BCV27 BCV28 BCV29 BCV46 BCV47 BCV48 BCV49 BSP50 BSP51 BSP52 BSP60 BSP61 BSP62 PZTA13 PZTA14

Contextual Info: BCV26 IS OBSOLETE PLEASE USE MMBTA64 BCV46 IS CURRENTLY ACTIVE BCV26 BCV46 SOT23 PNP SILICON PLANAR DARLINGTON TRANSISTORS ISSUE 3 – SEPTEMBER 1995 FEATURES * Low saturation voltage COMPLEMENTARY TYPE – PARTMARKING DETAILS – E C BCV26 - BCV27 BCV46 - BCV47

MARKING fd SOT23

Abstract: FD MARKING CODE SOT23 BCV26 BCV27 BCV46 BCV47
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BCV26; BCV46 PNP Darlington transistors Product data sheet Supersedes data of 1999 Apr 08 2004 Jan 13 NXP Semiconductors Product data sheet PNP Darlington transistors BCV26; BCV46 FEATURES PINNING • High current max. 500 mA

Contextual Info: DISCRETE SEMICONDUCTORS DAT BCV26; BCV46 PNP Darlington transistors Product data sheet Supersedes data of 1999 Apr 08 2004 Jan 13 NXP Semiconductors Product data sheet PNP Darlington transistors BCV26; BCV46 FEATURES PINNING • High current max. 500 mA

FD MARKING CODE SOT23

Abstract: MARKING fd SOT23 BCV26 BCV27 BCV46 BCV47 sot23 marking JR
Contextual Info: Philips Semiconductors Product specification PNP Darlington transistors BCV26; BCV46 FEATURES PINNING • High current max. 500 mA PIN DESCRIPTION • Low voltage (max. 60 V) 1 base • Very high DC current gain (min. 10000). 2 emitter 3 collector APPLICATIONS

Marking Code FGs

Contextual Info: BCV27, BCV47 NPN Silicon Darlington Transistors 3
For general AF applications
High collector current
High current gain
Complementary types: BCV26, BCV46 PNP 2 1 Type Marking Pin Configuration BCV27 FFs 1=B 2=E 3=C SOT23 BCV47 FGs 1=B 2=E 3=C SOT23

BCV47 philips

Contextual Info: DISCRETE SEMICONDUCTORS BITÂ S y i I T BCV26; BCV46 PNP Darlington transistors Product specification Supersedes data of 1997 Apr 23 Philips Sem iconductors 1999 Apr 08 PHILIPS Philips Semiconductors Product specification PNP Darlington transistors BCV26; BCV46

Contextual Info: Philips Semiconductors Product specification PNP Darlington transistors FEATURES BCV26; BCV46 PINNING • High current max. 500 mA PIN DESCRIPTION • Low voltage (max. 60 V) 1 base • Very high DC current gain (min. 10000). 2 emitter 3 collector APPLICATIONS

FD MARKING CODE SOT23

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BCV26; BCV46 PNP Darlington transistors Product specification Supersedes data of 1997 Apr 23 1999 Apr 08 Philips Semiconductors Product specification PNP Darlington transistors BCV26; BCV46 FEATURES

BCV26

Abstract: BCV27 BCV46 BCV47
Contextual Info: BCV26, BCV46 PNP Silicon Darlington Transistors • For general AF applications • High collector current 2 3 • High current gain 1 • Complementary types: BCV27, BCV47 NPN Type Marking Pin Configuration Package BCV26 FDs 1=B 2=E 3=C SOT23 BCV46 FEs

BCV46

Abstract: BCV26 BCV27 BCV47
Contextual Info: BCV26, BCV46 PNP Silicon Darlington Transistors • For general AF applications 2 3 • High collector current 1 • High current gain • Complementary types: BCV27, BCV47 NPN • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 Type

BCV26

Abstract: BCV27 BCV46 BCV47
Contextual Info: BCV26, BCV46 PNP Silicon Darlington Transistors 3
For general AF applications
High collector current
High current gain
Complementary types: BCV27, BCV47 NPN 2 1 Type Marking Pin Configuration BCV26 FDs 1=B 2=E 3=C SOT23 BCV46 FEs 1=B 2=E 3=C SOT23

Contextual Info: BCV26 BCV46 SOT23 PNP SILICON PLANAR DARLINGTON TRANSISTORS ISSU E 3 - SEPTEMBER 1995 FEATURES * L o w saturation voltage C O M P LE M E N T A R Y TYPE - B C V 2 6 - BC V27 P A R T M A R K IN G D E T A IL S - 8 C V 2 6 - ZFD c V E BC V46 - BCV47 B C V 4 6 - ZFE

Contextual Info: BCV26 BCV46 SOT23 PNP SILICON PLANAR DARLINGTON TRANSISTORS ISSUE 3 – SEPTEMBER 1995 FEATURES * Low saturation voltage COMPLEMENTARY TYPE – PARTMARKING DETAILS – E C BCV26 - BCV27 BCV46 - BCV47 BCV26 - ZFD BCV46 - ZFE B ABSOLUTE MAXIMUM RATINGS. PARAMETER

Contextual Info: BCV46 Transistors PNP Darlington Transistor Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)80 I(C) Max. (A)500m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)30 h(FE) Min. Current gain.10k

BCV26

Abstract: BCV27 BCV46 BCV47 sot23 fd
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BCV26; BCV46 PNP Darlington transistors Product specification Supersedes data of 1999 Apr 08 2004 Jan 13 Philips Semiconductors Product specification PNP Darlington transistors BCV26; BCV46 FEATURES PINNING • High current max. 500 mA

Contextual Info: BCV27, BCV47 NPN Silicon Darlington Transistors 3
For general AF applications
High collector current
High current gain
Complementary types: BCV26, BCV46 PNP 2 1 Type Marking Pin Configuration BCV27 FFs 1=B 2=E 3=C SOT23 BCV47 FGs 1=B 2=E 3=C SOT23

Contextual Info: BCV26, BCV46 PNP Silicon Darlington Transistors 3
For general AF applications
High collector current
High current gain
Complementary types: BCV27, BCV47 NPN 2 1 Type Marking Pin Configuration BCV26 FDs 1=B 2=E 3=C SOT23 BCV46 FEs 1=B 2=E 3=C SOT23

Contextual Info: BCV26, BCV46 PNP Silicon Darlington Transistors • For general AF applications 2 3 • High collector current 1 • High current gain • Complementary types: BCV27, BCV47 NPN • Pb-free (RoHS compliant) package • Qualified according AEC Q101 Type Marking

Contextual Info: BCV27, BCV47 NPN Silicon Darlington Transistors • For general AF applications 2 3 • High collector current 1 • High current gain • Complementary types: BCV26, BCV46 PNP • Pb-free (RoHS compliant) package • Qualified according AEC Q101 Type Marking