BCY65 Search Results

bcv59

Abstract: N705 bcv-59 ZTX301
Contextual Info: ’ ZETEX SEMICONDUCTORS IbE D • =1170570 000b675 0 ■ ZETB ' SEM IC O N D U C T O R DICE ELECTRICAL C H A RA C TERIST ICS NPN SM A LL SIGNAL TRA N SISTO R S Dice type- BC546A BC546B ZT X304 BCY65EA BC182 BC107A BC107B BC237 BC547A BC547B BC550B BC550C

2N2222 MPS2222

Abstract: 2N3906 NPN switching transistor 2N4403 2N4400 2N4401 2N4402 2N4403 BCY59P BCY65EP BCY77P
Contextual Info: TABLE 3 : NPN SWITCHING Max V CE sat Min fT hFE V CEO Max 'c V mA BCY65EP 60 100 0.35 10 0.25 120 460 2 125 10 150 800 2 125 10 150 800 Type at Max. Switching Times at V at at •c Iß Min Max 'c 'c ^on mA mA mA MHz mA ns BCY59P 45 200 0.35 10 0.25 120 630

2N39045

Abstract: 2N4400 2N4401 2N4402 2N4403 BCY59P BCY65EP BCY77P BCY79P MPS2222A
Contextual Info: T A B L E 4 : P N P SW ITCHING M ax V CE satl Min h FE at Max. Sw itching Times at V C EO M ax 'c V mA M PS2907A 60 600 BCY77P 60 100 0 .2 5 10 0.25 120 4 6 0 2 1 8 0 * 10 85 150 10 BCY65EP BCY79P 45 2 0 0 0 .2 5 10 0 .25 120 4 6 0 2 1 8 0 * 10 85 150 10 BCY59P

BCY65

Abstract: BCY65-VIII BCY65-IX BCY65-VII BCY65IX
Contextual Info: BCY65 T " 3 5 '- / I PHILIPS INTERNATIONAL SbE D 7110ÖSb DDM21D2 T Sü « P H I N SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in TO-18 metal envelope with the collector connected to the case and designed for use in amplifier and switching applications.

2N4400

Abstract: 2N4401 2N4402 2N4403 BCY59P BCY65EP BCY77P BCY79P MPS2907A ZTX360
Contextual Info: TABLE 3 : NPN SWITCHING Max V CE sat Type Max V CEO at 'c Min h FE at fT at Max. Switching Times at •c Iß Min Max 'c 'c ^on mA mA mA MHz mA ns ^off V mA BCY65EP 60 100 0.35 10 0.25 120 460 2 125 10 150 800 2 125 10 150 800 V BCY59P 45 200 0.35 10 0.25 120 630

bcy65

Abstract: BCY65IX
Contextual Info: BCY65 _ SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in TO-18 metal package w ith the collector connected to the case and designed for use in am plifier and switching applications. Q UICK REFERENCE D A T A Collector-emitter voltage open base

2N2222 MPS2222

Abstract: 2N3906 ZTX313 ZTX510 2N4400 2N4401 2N4402 2N4403 BCY59P BCY65EP
Contextual Info: TABLE 4 : PNP SWITCHING Max V CE satl Min fT hFE V CEO Max 'c V mA M P S2 9 0 7 A 60 600 BCY77P 60 100 0 .2 5 10 0 .2 5 120 4 6 0 2 1 8 0 * 10 85 150 10 BCY65EP BCY79P 45 2 0 0 0 .2 5 10 0 .2 5 120 4 6 0 2 1 8 0 * 10 85 150 10 BCY59P 2 N 4403 40 600 0 .4 150

2N2222 MPS2222

Abstract: 2N2222 MPS2222 npn transistor ZTX312 ZTX313
Contextual Info: TABLE 4 : PNP SWITCHING Max V CE satl Min h FE Max 'c V mA M PS2907A 60 600 BCY77P 60 100 0.25 10 0.25 120 460 2 180* 10 85 150 10 BCY65EP BCY79P 45 200 0.25 10 0.25 120 460 2 180* 10 85 150 10 BCY59P 2N4403 40 600 0.4 150 15 100 300 150 200 20 35 255 150 2N4401

BCY65

Contextual Info: I I N AMER PHILIPS/DISCRETE b'lE D • bb53331 □DS7b32 2SA BCY65 IAPX SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in TO-18 metal envelope with the collector connected to the case and designed for use in amplifier and switching applications. QUICK REFERENCE DATA

2N5086

Abstract: 2N5087 2N5209 2N5210 BC550P BC560P BCY65EP BCY77P ZTX331 ZTX382
Contextual Info: TABLE 5 : NPN LOW NOISE The transistors in this table are characterised for low noise, low level am plification and are ideally suited for audio pre-amplifiers as well as universal applications. Max Type BCY65EP ^CEO Max V CE sat at h FE 'b Min Max at Min fT

Contextual Info: 5 bE ]> • cH 7 05 7 fl G00LiT3b ATM ■ Z E T B ZETEX SEMICONDUCTORS Max VCE sat| t ^BLE Max •c V mA M PS2907A 60 600 BCY77P 60 100 0.25 10 0.25 120 460 2 180* 10 85 150 10 BCY65EP BCY79P 45 200 0.25 10 0.25 120 460 2 180* 10 85 150 10 BCY59P 2N4403 40

2N2222A zetex

Contextual Info: ZETEX S E M I C O N D U C T O R S IbE D • TTVDSTfl OOObfl4ö ñ ■ ZETB METAL CAN SPECIFICATIONS ~rz°i - Z 3 NPN LOW NOISE Type ZT91 ZT92 BSY55 ZT93 ZT86 ZT88 ZT89 ZT90 ZT95 BCY65E 2N2484 ZT94 ZT83 ZT84 BCY59 BCY56 2N930 2N2219A 2N2222A ZT81 ZT82 BCY58

BCY65

Abstract: BCY65-IX BCY65-VII BCY65-VIII 27B3-2
Contextual Info: I I N AMER PHILIPS/DISCRE TE bTE T> • bbSB^l [][]27b32 25Ô BCY65 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in T O -18 metal envelope w ith the collector connected to the case and designed for use in am plifier and switching applications. Q U IC K R E F E R E N C E D A T A

ZTX109

Abstract: DSA2IH00224555.
Contextual Info: TABLE 5 : NPN LOW NOISE The transistors in this table are characterised for low noise, low level amplification and are ideally suited for audio pre-amplifiers as well as universal applications. Type ^CEO V BCY65EP 60 2N5209 50 Max 'c mA hFE M a x V CEIsat>

transistor 2N3905

Abstract: 2N4400 2N4401 2N4402 2N4403 BCY59P BCY65EP BCY77P BCY79P MPS2907A
Contextual Info: TABLE 3 : NPN SWITCHING M ax V CE sat M ax Type V CEO M in h FE fT Max. Sw itching Times at at at •c mA Iß Min M ax 'c 'c ^on mA m A M H z m A ns at Complement 'c ^off Ic mA 10 BCY77P 10 BCY79P V mA BCY65EP 60 1 00 0 .35 10 0 .25 1 20 4 6 0 2 125 10 1 50 8 0 0

2N4400

Abstract: 2N4401 2N4402 2N4403 BCY59P BCY65EP BCY77P BCY79P MPS2222A MPS2907
Contextual Info: TABLE 4 : PNP SWITCHING Max V CE satl Min h FE at M ax. Switching Tim es at V CEO Max 'c V mA M P S2 9 0 7 A 60 600 BCY77P 60 100 0 .2 5 10 0 .2 5 120 4 6 0 2 1 8 0 * 10 85 150 10 BCY65EP BCY79P 45 2 0 0 0 .2 5 10 0 .2 5 120 4 6 0 2 1 8 0 * 10 85 150 10 BCY59P

2N2222 MPS2222

Abstract: 2N2222 MPS2222 npn transistor ZTX313 ZTX312 2N2222 BCy71 NPN switching transistor 2N4403 2N4400 2N4401 2N4402
Contextual Info: TABLE 3 : NPN SWITCHING Max V CE sat Type Max V CEO at 'c Min h FE at fT at Max. Switching Times at •c Iß Min Max 'c 'c ^on mA mA mA MHz mA ns Ic mA 10 BCY77P 10 BCY79P V mA BCY65EP 60 100 0.35 10 0.25 120 460 2 125 10 150 800 2 125 10 150 800 V BCY59P

bc238

Contextual Info: SbE 3> • ^70570 0DG7DM7 3 3 1 ■ Z E T B SEMICONDUCTOR DICE zetex semiconductors NPN SM ALL SIGNAL TRA N SISTO R S V CBO V CE0 hFE at •CBO Dice type Min. Min. Max. at V CB Volts Volts BC 546A BC546B ZTX304 BCY65EA BC182 BC 107A BC107B BC237 BC 547A BC547B

BC548C

Abstract: BC107A BC108A BC108b ZTX301
Contextual Info: SEM ICO N D U CTOR DICE NPN SMALL SIGNAL TRANSISTORS V CBO V CEO h FE ^CBO V CE sat! at Dice type Min. Min. Wax. at VCB VCE at lc Volts Volts nA Volts Min. Max. mA Volts Volts mA BC546A BC546B ZTX304 BCY65EA BC182 BC107A BC107B BC237 BC547A BC547B BC550B BC550C

2N39045

Contextual Info: T A B L E 4 : PNP SWITCHING Max V CE|Sat Max Type V CEO Min h FE at at at fT Max. Switching Times at Complement !c Min Max !c ^on !c •c •b mA mA mA MHz mA ns ^off ns <c mA V mA MPS2907A 60 600 BCY77P 60 100 0.2 5 10 0.25 120 460 2 180* 10 85 150 10 BCY65EP

Contextual Info: BCY65EIX Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V) I(C) Max. (A)200m Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.350Â h(FE) Max. Current gain.

TO-39 1000 V

Contextual Info: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices show n in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, Industrial and Military

bc140

Abstract: 2n1711 complement 2N1893 2N2102 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88
Contextual Info: NPN GENERAL PURPOSE TA B LE1 NPN SILICON PLANAR G EN ER A L P U R P O S E T R A N S IST O R S The devices shown in this table are general purpose transistors designed for small and medium signal, low and medium power amplification from D.C. to radio frequencies in Commercial,

bc140

Abstract: 2N2405 2N1893 2N2102 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91
Contextual Info: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices shown in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, Industrial and Military