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    BD 139 PACKAGE Search Results

    BD 139 PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH
    Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH1R306PL
    Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 100 A, 0.00134 Ω@10 V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH9R00CQ5
    Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 150 V, 64 A, 0.009 Ω@10 V, High-speed diode, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPHR8504PL
    Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 150 A, 0.00085 Ω@10 V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM
    Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation

    BD 139 PACKAGE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BD 139 N

    Abstract: transistor BD 141 bd139
    Contextual Info: 2SC D • 023Sfc.GS 0QQ4332 4 c NPN Silicon Transistors SIEG D: BD 135 BD 137 BD 139 SIEMENS AKTIEN6ESELLSCHAF For AF driver and output stages o f m edium performance BD 135, BD 137, and BD 139 are epitaxial NPN silicon planar transistors in TO 126 plastic package 12 A 3 DIN 41869, sheet 4 . The collector is electrically connected to


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    023Sfc 0QQ4332 Q62702-D106 Q62702-D106-V1 Q62702-D106-V2 Q62702-D106-V3 Q621758 fl23Sb05 Q00M33b BD 139 N transistor BD 141 bd139 PDF

    8D139

    Abstract: bd139 B0139 TRANSISTOR BD 137 transistor BD 378 TRANSISTOR BD 137-10 transistor a110 B0137 D106-V2 BD135
    Contextual Info: 2SC D • 053SbOS 0004332 4 « S I E G ^ - NPN Silicon Transistors ■ T ^ Ï'O T — BD 135 BD 137 SIEMENS AKTIEN6ESELLSCHAF- BD 139 For AF driver and ou tp u t stages o f m edium performance BD 135, BD 137, and BD 139 are epitaxial NPN silicon planar transistors in TO 126


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    fl23SbQS 135/BD 137/BD BD135, B0137, B0139 BD137, BD139 BD136. 8D139 bd139 B0139 TRANSISTOR BD 137 transistor BD 378 TRANSISTOR BD 137-10 transistor a110 B0137 D106-V2 BD135 PDF

    BD139 N

    Abstract: BD 139 BD139 NPN BD140 BD135 BD136
    Contextual Info: S C S -T H O M S O N M im [iEgTO *S BD135 BD137/BD139 NPN SILICON TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD 135, BD 137 and BD 139 are silicon epitaxial planar NPN transistors in Jedec SOT-32 plastic package, designed for audio amplifiers


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    BD135 BD137/BD139 OT-32 BD136 BD138 BD140. BD135 BD137 BD139 BD139 N BD 139 BD139 NPN BD140 PDF

    transistor BD 378

    Abstract: BD140 pnp transistor BD136 transistors bd136 bd136 N bd140
    Contextual Info: BD136 BD138 BD140 SILICON PLANAR EPITAXIAL POWER TRANSISTORS General purpose p-n-p transistors in SOT-32 plastic package, recom m ended fo r d river stages in h i-fi am p lifiers and television circuits. The BD 135, BD 137 and BD 139 are co m p le m e n tary to the B D 136, BD 138 and B D 140 respectively.


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    BD136 BD138 BD140 OT-32 BD140 transistor BD 378 BD140 pnp transistor transistors bd136 bd136 N PDF

    pin configuration transistor bd140

    Abstract: 2SD669 equivalent BUV44 bd140 equivalent transistor MJE15020 bd140 equivalent BD250C EQUIVALENT RCA122 2N6045 NPN POWER DARLINGTON TRANSISTOR BD 136
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium Power Silicon PNP Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 0.15 Adc • BD 136, 138, 140 are complementary with BD 135, 137, 139


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    BD136 BD138 BD140 BD140-10 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A pin configuration transistor bd140 2SD669 equivalent BUV44 bd140 equivalent transistor MJE15020 bd140 equivalent BD250C EQUIVALENT RCA122 2N6045 NPN POWER DARLINGTON TRANSISTOR BD 136 PDF

    BD139

    Abstract: transistor BD 139 BD 139 transistor BD139-6 BD 139 N BD 139-16 transistor bd 242 bd 3055 BD139 amplifier BD NPN transistors
    Contextual Info: BD 139 NPIM-EPITAXIAL-PLANAR-SILICON-TRANSISTOR • • • • • Driver fo r Audio A m plifier Active Convergenz Regulators Power Switching Pt o t = 6.5 W at T g = 60 oc • hFE > 40 at !C = - 1 5 0 mA • VcE sat < - 0 .5 V at lc = - 0 .5 A mechanical data


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    BD139 40PEP 80PEP OT-32 OT-32 O-66P BD139 transistor BD 139 BD 139 transistor BD139-6 BD 139 N BD 139-16 transistor bd 242 bd 3055 BD139 amplifier BD NPN transistors PDF

    BD135-BD137-BD139

    Abstract: BP135 BD135,BD137,BD139
    Contextual Info: 7^25537 002037? 0 H *57 "T^SS'iS S C S -T H O M S O N HOOœiLtlOïï^ÛiDtgi S G S-THOMSON BD135 B D 137-BD 139 30E D MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS DESC RIPTIO N The BD135, BD137, BD139 are silicon epitaxial pla­ nar NPN transistors in Jedec TO-126 plastic


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    BD135 137-BD BD135, BD137, BD139 O-126 BD136, BD138 BD140 300jis, BD135-BD137-BD139 BP135 BD135,BD137,BD139 PDF

    BD NPN transistors

    Abstract: BD 139 140 BD - 100 V BD139-6 BD139 bd 139 package BD244 BD249 BDX15 Tc Bd 139
    Contextual Info: Typ type f MHz vcc 2N 2N 2N 2N 150 400 400 50 13 28 26 12,5 5713 5773 5774 5848 Pout bvcbo bvceo Gehause package 3,4 0,12 1 3,25 11 1,5 8 20 60 65 65 48 40 35 35 24 TO-128 TO-117 TO-129 145 v CEO mm V 'CD max A mm hpE max 45 60 80 1 1 1 40 40 40 250 160 160


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    O-128 O-117 O-129 BD NPN transistors BD 139 140 BD - 100 V BD139-6 BD139 bd 139 package BD244 BD249 BDX15 Tc Bd 139 PDF

    BD139 PIN DIAGRAM

    Abstract: BD135 PIN DIAGRAM to225aa BD137G BD139 BD139G pin diagram of bd139 bd139 140 TRANSISTOR bd 330 BD137
    Contextual Info: BD135, BD137, BD139 Plastic Medium Power Silicon NPN Transistor This series of plastic, medium−power silicon NPN transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. Features • Pb−Free Packages are Available


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    BD135, BD137, BD139 BD135 BD137 BD139 PIN DIAGRAM BD135 PIN DIAGRAM to225aa BD137G BD139 BD139G pin diagram of bd139 bd139 140 TRANSISTOR bd 330 BD137 PDF

    bd 3055

    Abstract: BD 139 140 BD NPN transistors BDX 241 BD139-6 2N3055 BD139 3055 npn BD 139 N to128
    Contextual Info: Typ type f MHz vcc 2N 2N 2N 2N 150 400 400 50 13 28 26 12,5 5713 5773 5774 5848 Pout bvcbo bvceo Gehause package 3,4 0,12 1 3,25 11 1,5 8 20 60 65 65 48 40 35 35 24 TO-128 TO-117 TO-129 145 v CEO mm V 'CD max A mm hpE max 45 60 80 1 1 1 40 40 40 250 160 160


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    O-128 O-117 O-129 40PEP 80PEP OT-32 OT-32 O-66P bd 3055 BD 139 140 BD NPN transistors BDX 241 BD139-6 2N3055 BD139 3055 npn BD 139 N to128 PDF

    CGB7017-SC

    Abstract: BD 644 CGB7017-SC-0G0T CGB7017-BD CGB7017-SC-0G00 CGB7017-SP-0G00 CGB7017-SP-0G0T MCH185A101JK PB-CGB7017-SC-0000 0776
    Contextual Info: DC-8.0 GHz InGaP HBT, MMIC or Packaged, Matched Gain Block Amplifier May 2006 - Rev 23-May-06 CGB7017-SC -BD Features Functional Block Diagram (SOT-89) Low Operating Voltage: 5V 33.8 dBm Output IP3 @ 850 MHz 3.3 dB Noise Figure @ 850 MHz 23.1 dB Gain @ 850 MHz, 19.5 dB @ 6 GHz


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    23-May-06 CGB7017-SC OT-89 OT-86 CGB7017-SC BD 644 CGB7017-SC-0G0T CGB7017-BD CGB7017-SC-0G00 CGB7017-SP-0G00 CGB7017-SP-0G0T MCH185A101JK PB-CGB7017-SC-0000 0776 PDF

    mmic C5 sot 86

    Abstract: CGB7017-BD CGB7017-SC CGB7017-SC-0G00 CGB7017-SC-0G0T CGB7017-SP-0G00 CGB7017-SP-0G0T MCH185A101JK PB-CGB7017-SC-0000 sc 6700
    Contextual Info: DC-8.0 GHz InGaP HBT, MMIC or Packaged Matched Gain Block Amplifier September 2006 - Rev 01-Sep-06 CGB7017-SC -BD Features Functional Block Diagram (SOT-89) Low Operating Voltage: 5V 33.8 dBm Output IP3 @ 850 MHz 3.3 dB Noise Figure @ 850 MHz 23.1 dB Gain @ 850 MHz, 19.5 dB @ 6 GHz


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    01-Sep-06 CGB7017-SC OT-89 OT-86 mmic C5 sot 86 CGB7017-BD CGB7017-SC CGB7017-SC-0G00 CGB7017-SC-0G0T CGB7017-SP-0G00 CGB7017-SP-0G0T MCH185A101JK PB-CGB7017-SC-0000 sc 6700 PDF

    mmic C4 sot 89

    Abstract: CGB7014-SC CGB7014-BD CGB7014-SC-0G00 CGB7014-SC-0G0T CGB7014-SP-0G00 CGB7014-SP-0G0T MCH185A101JK PB-CGB7014-SC-0000 PB-CGB7014-SP-0000
    Contextual Info: DC-8.0 GHz InGaP HBT, MMIC or Packaged, Matched Gain Block Amplifier May 2006 - Rev 23-May-06 CGB7014-SC -BD Features Functional Block Diagram (SOT-89) 18.5 dB Gain @ 6 GHz 24.5 dB Gain @ 850 MHz 36.0 dBm Output IP3 @ 850 MHz 3.5 dB Noise Figure @ 850 MHz


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    23-May-06 CGB7014-SC OT-89 OT-86 mmic C4 sot 89 CGB7014-SC CGB7014-BD CGB7014-SC-0G00 CGB7014-SC-0G0T CGB7014-SP-0G00 CGB7014-SP-0G0T MCH185A101JK PB-CGB7014-SC-0000 PB-CGB7014-SP-0000 PDF

    BDI35

    Abstract: BDI37 LB 137 transistor transistor BD 139 transistor BD139 N BD 139 N Transistor Bd 140 bd 135 BD 139 transistor BD139
    Contextual Info: MOTOROLA Order this document by BD135/D SEMICONDUCTOR TECHNICAL DATA BD135 BD137 BD139 Plastic Medium Power Silicon NPN Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • • DC Current Gain — hpE = 40 Min @ Iq = 0.15 Adc


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    BD135/D BD135 BD137 BD139 O-225AA BDI35 BDI37 LB 137 transistor transistor BD 139 transistor BD139 N BD 139 N Transistor Bd 140 bd 135 BD 139 transistor BD139 PDF

    CHA-3688

    Abstract: AN0017 MO-220 a3688
    Contextual Info: CHA3688aQDG RoHS COMPLIANT 12.5-30GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA3688aQDG is a three-stage self-biased wide band monolithic low noise amplifier. UMS A3688A A3667A YYWWG The circuit is manufactured with a standard


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    CHA3688aQDG 5-30GHz CHA3688aQDG A3688A A3667A 115mA 30GHz 26dBm 24L-QFN4x4 18ult CHA-3688 AN0017 MO-220 a3688 PDF

    CGB7014-BD

    Abstract: CGB7014-SC CGB7014-SC-0G00 CGB7014-SC-0G0T CGB7014-SP-0G00 CGB7014-SP-0G0T MCH185A101JK PB-CGB7014-SC-0000 PB-CGB7014-SP-0000
    Contextual Info: DC-8.0 GHz InGaP HBT, MMIC or Packaged Matched Gain Block Amplifier September 2006 - Rev 18-Sep-06 CGB7014-SC -BD Features Functional Block Diagram (SOT-89) 18.5 dB Gain @ 6 GHz 24.5 dB Gain @ 850 MHz 36.0 dBm Output IP3 @ 850 MHz 3.5 dB Noise Figure @ 850 MHz


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    18-Sep-06 CGB7014-SC OT-89 OT-86 CGB7014-BD CGB7014-SC CGB7014-SC-0G00 CGB7014-SC-0G0T CGB7014-SP-0G00 CGB7014-SP-0G0T MCH185A101JK PB-CGB7014-SC-0000 PB-CGB7014-SP-0000 PDF

    BD139 MOTOROLA

    Abstract: BD139 h parameters BD139 transistor BD135 BD135 transistor BD 139 transistor U/25/20/TN26/15/850/power transistor bd135 BD137 parameters bd139 pin out BD135
    Contextual Info: MOTOROLA Order this document by BD135/D SEMICONDUCTOR TECHNICAL DATA BD135 BD137 BD139 Plastic Medium Power Silicon NPN Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 0.15 Adc


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    BD135/D* BD135/D BD139 MOTOROLA BD139 h parameters BD139 transistor BD135 BD135 transistor BD 139 transistor U/25/20/TN26/15/850/power transistor bd135 BD137 parameters bd139 pin out BD135 PDF

    BD 140 transistor

    Abstract: transistor BD 140 BD 139 140 BD139 h parameters BD NPN transistors BD139 power transistor bd139 transistor bd 138 BD 139 transistor BD135-D
    Contextual Info: ON Semiconductor BD135 BD137 BD139 Plastic Medium Power Silicon NPN Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. 1.5 AMPERE POWER TRANSISTORS NPN SILICON 45, 60, 80 VOLTS 10 WATTS


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    BD135/D r14525 BD 140 transistor transistor BD 140 BD 139 140 BD139 h parameters BD NPN transistors BD139 power transistor bd139 transistor bd 138 BD 139 transistor BD135-D PDF

    to225aa

    Abstract: TO-225AA pin diagram BD140 Power Transistors TO-225aa Case to.225aa 225AA to225aa case 77 BD136 BD136G BD138G
    Contextual Info: BD136, BD138, BD140 Plastic Medium Power Silicon PNP Transistor This series of plastic, medium−power silicon PNP transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. Features • Pb−Free Packages are Available*


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    BD136, BD138, BD140 BD136 BD138 to225aa TO-225AA pin diagram BD140 Power Transistors TO-225aa Case to.225aa 225AA to225aa case 77 BD136 BD136G BD138G PDF

    TRANSISTOR BD 136

    Abstract: BD137 parameters BD139 BD139 h parameters power transistor bd139 TRANSISTOR BD139 BD135 BD137 BD139 circuits BD 139 & 140
    Contextual Info: ON Semiconductort BD135 BD137 BD139 Plastic Medium Power Silicon NPN Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. 1.5 AMPERE POWER TRANSISTORS NPN SILICON 45, 60, 80 VOLTS 10 WATTS


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    BD135/D r14525 TRANSISTOR BD 136 BD137 parameters BD139 BD139 h parameters power transistor bd139 TRANSISTOR BD139 BD135 BD137 BD139 circuits BD 139 & 140 PDF

    BD 882

    Abstract: BD 667 bd 125 equivalent marking BGG tvs bd 368 t 944
    Contextual Info: SMCJ5.0 thru 188CA Surface Mount Transient Voltage Suppressors Peak Pulse Power 1500W Stand-off Voltage 5.0 to 188V Features ‹ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ‹ Low profile package with built-in strain relief for surface


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    188CA 10/1000us 250oC/10 DO-214AB MIL-STD-750, Polarit160A SMCJ170 SMCJ170A SMCJ188 SMCJ188A BD 882 BD 667 bd 125 equivalent marking BGG tvs bd 368 t 944 PDF

    Contextual Info: CGB7015-SC -BD 0.1 GHz to 6.0 GHz InGaP HBT, MMIC or Packaged, Matched Gain Block Amplifier Advanced Product Information August 2004 V1.0 (1 of 7) Features ❏ Low Operating Voltage: 5V ❏ 37.0 dBm Output IP3 @ 850 MHz ❏ 4.0 dB Noise Figure @ 850 MHz


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    CGB7015-SC OT-89 PDF

    BGY 602

    Abstract: BD 882 KD 605 447 gev SMCJ10 SMCJ10A SMCJ10CA SMCJ11 SMCJ11A SMCJ12
    Contextual Info: SMCJ5.0 thru 440CA Surface Mount Transient Voltage Suppressors Peak Pulse Power 1500W Stand-off Voltage 5.0 to 440V Features Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Low profile package with built-in strain relief for surface


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    440CA 10/1000us 250oC/10 DO-214AB MIL-STD-750, SMCJ300A SMCJ350A SMCJ400A SMCJ440A 300us BGY 602 BD 882 KD 605 447 gev SMCJ10 SMCJ10A SMCJ10CA SMCJ11 SMCJ11A SMCJ12 PDF

    CGB7015-BD

    Abstract: CGB7015-SC CGB7015-SC-0G00 CGB7015-SC-0G0T CGB7015-SP-0G00 CGB7015-SP-0G0T MCH185A101JK PB-CGB7015-SC-0000 PB-CGB7015-SP-0000 mmic C4 sot 89
    Contextual Info: DC-8.0 GHz InGaP HBT, MMIC or Packaged, Matched Gain Block Amplifier May 2006 - Rev 23-May-06 CGB7015-SC -BD Features Functional Block Diagram (SOT-89) Low Operating Voltage: 5V 37.0 dBm Output IP3 @ 850 MHz 4.0 dB Noise Figure @ 850 MHz 23.0 dB Gain @ 850 MHz


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    23-May-06 CGB7015-SC OT-89 OT-86 CGB7015-BD CGB7015-SC CGB7015-SC-0G00 CGB7015-SC-0G0T CGB7015-SP-0G00 CGB7015-SP-0G0T MCH185A101JK PB-CGB7015-SC-0000 PB-CGB7015-SP-0000 mmic C4 sot 89 PDF