BD 175 Search Results

BUX 127

Abstract: bdw 51 52 BDX 241 mje 3001 BUX 115 8D243C TIP 107 bdx 679 BUX 34 BD 139 140
Contextual Info: POWER DISCRETE DEVICES ALPHA • NUMERICAL INDEX Typ« BD 135 BD 136 BD 137 BD 138 BD 139 BD 140 BD 142 BD 175 BD 176 BD 177 BD 178 BO 179 BD 180 BD 181 BD 182 BD 183 BD 233 BD 234 BD 235 BD 236 BD 237 BD 238 BD 239 BD 239A BD 239B BD 239C BD 240 BD 240A BD 240B

BDX 241

Abstract: BD 35 transistor 3055 transistor TRANSISTOR BDX transistor 3055 transistor BUx 49 transistor BD 140 TRANSISTOR BDX 14 transistor 2N 3055 transistor bd 905
Contextual Info: TOP-3 general purpose transistor selector guide y guide de sélection transistors TO P-3 usage général THOMSON-CSF ^ \ \ C E O (sus 45V 60V 80V 100V BD 249 BD 249A BD 249B BD 249C BD 250 BD 250A BD 250B BD 250C Case 25 A T0-220AB general purpose transistor selector guide

D 1703

Contextual Info: M IC D N D U C T D R i MMBD1701 M M BD 1703 M M BD 1704 M M BD 1705 SOT-23 MARKING 85 M M BD 1701A 87 M M BD 1703A 88 M M BD 1704A 89 M M BD 1705A / 1703/A / 1704/A / 1705/A MMBD1701/A / 1703/A / 1704/A / 1705/A 85A 87A 88A 89A High Conductance Low Leakage Diode

8D139

Abstract: bd139 B0139 TRANSISTOR BD 137 transistor BD 378 TRANSISTOR BD 137-10 transistor a110 B0137 D106-V2 BD135
Contextual Info: 2SC D • 053SbOS 0004332 4 « S I E G ^ - NPN Silicon Transistors ■ T ^ Ï'O T — BD 135 BD 137 SIEMENS AKTIEN6ESELLSCHAF- BD 139 For AF driver and ou tp u t stages o f m edium performance BD 135, BD 137, and BD 139 are epitaxial NPN silicon planar transistors in TO 126

BD 139 N

Abstract: transistor BD 141 bd139
Contextual Info: 2SC D • 023Sfc.GS 0QQ4332 4 c NPN Silicon Transistors SIEG D: BD 135 BD 137 BD 139 SIEMENS AKTIEN6ESELLSCHAF For AF driver and output stages o f m edium performance BD 135, BD 137, and BD 139 are epitaxial NPN silicon planar transistors in TO 126 plastic package 12 A 3 DIN 41869, sheet 4 . The collector is electrically connected to

lem HA 10000

Abstract: BDW23 lem HA 100MA 45 V NPN BDW23A BDW23B BDW23C BDW24 BDW24A BDW24B
Contextual Info: BDW23/A/B/C NPN EPITAXIAL SILICON TRANSISTOR POWER DARLINGTON TR HAMMER DRIVERS, AUDIO AMPLIFIERS APPLICATIONS • C om plem ent to BD W 24, BD W 24A, BD W 24B and BD W 24C respectively ABSOLUTE MAXIMUM RATINGS Characteristic Sym bol Rating Unit 45 V : BD W 23A

Contextual Info: BDW23/A/B/C NPN EPITAXIAL SILICON TRANSISTOR POWER DARLINGTON TR HAMMER DRIVERS, AUDIO AMPLIFIERS APPLICATIONS • C om plem ent to BD W 24, BD W 24A, BD W 24B and BD W 24C respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Rating Unit 45 V : BD W 23A 60

93c100

Contextual Info: BDW93/A/B/C NPN EPITAXIAL SILICON TRANSISTOR POWER DARLINGTON TR HAMMER DRIVERS, AUDIO AMPLIFIERS APPLICATIONS • C om plem ent to BD W 94, BD W 94A, BD W 94B and BD W 94C respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Sym bol Rating Unit 45 V : BD W 93A

BDW93C

Abstract: BDW93 NPN Transistor TO220 VCEO 80V 100V bdw93c applications BDW93C TRANSISTOR 100MA 45 V NPN BDW94 BDW93A BDW93B BDW94A
Contextual Info: BDW93/A/B/C NPN EPITAXIAL SILICON TRANSISTOR POWER DARLINGTON TR HAMMER DRIVERS, AUDIO AMPLIFIERS APPLICATIONS • C om plem ent to BD W 94, BD W 94A, BD W 94B and BD W 94C respectively ABSOLUTE MAXIMUM RATINGS Characteristic Sym bol C ollector E m itter V o lta g e : BD W 93

BD NPN transistors 177

Abstract: IC 74157 BD 2418 BD179 BD175 BD177 bd 175 236 TFK BD176 din 125a
Contextual Info: BD 175 • BD 177 • BD 179 Silizium-NPN-Epibasis-Leistungstransistoren Silicon NPN Epibase Power Transistors Anw endungen: Audio-Verstärker, -Treiber und -Endstufen Applications: Allgemein im NF-Bereich Audio amplifier, driver and output stages General in AF-range

diode sg 89a

Abstract: A1703 MMBD1703A sg 87a A1705 mmbd1701-1705 MMBD1704A MMBD1701 MMBD1701A MMBD1703
Contextual Info: Semiconductor'" MMBD1701/A 1 1703/A 1 1704/A / 1705/A _S_ 85 m h- M ARKING M M BD 1701 M M BD1703 M M BD1704 M M BD1705 SOT-23 85 87 88 89 M M BD 1701A M M BD 1703A M M BD 1704A M M BD 1705A 85A 87A 88A 89A High Conductance Low Leakage Diode Sourced from Proce ss 1T.

IC 74157

Abstract: to 126 leistungstransistoren BD 176 BD176 BD180 BD178 "BO 180" B0180 TFK F BD 175 TFK G BD 175
Contextual Info: ► BD 176 • BD 178 • BD 180 Silizium-PNP-Epibasis-Leistungstransistoren Silicon PNP Epibase Power Transistors Anwendungen: Audio-Verstärker, -Treiber und -Endstufen Allgemein im NF-Bereich Applications: Audio amplifier, driver and output stages General in AF-range

Contextual Info: SEMICONDUCTOR tm MMBD1401 /1403 /1404 /1405 MMBD1401 M M BD 1403 MARKING 29 M M BD 1404 32 M M BD 1405 High Voltage General Purpose Diode Sourced from Process 1H. Absolute Maximum RatitlQS TA = 25°C unless otherwise noted Parameter Symbol Value Units W|V

B 1403 N

Contextual Info: M lC O N D U C T O R tm MMBD1401 /1403 /1404 /1405 MARKING SOT-23 MMBD1401 M M BD 1403 29 32 M M BD 1404 M M BD 1405 33 34 High Voltage General Purpose Diode Sourced from Process 1H. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Parameter Symbol

Contextual Info: BD Series High Temperature^ for +125°C FEATURES 1. Wide operating temperature range, it as long load life product at 125°C. 2. Suit for use in DC or pulse circuits in various electronic and industrial SPECIFICATIONS BD Item Performance Characteristics Operating Temperature Range

1JX2308

Contextual Info: Output higher I/O Impedance? DC-rated L1 40 db / decade / tupnI tuptuO hgih tuptuO rehgihL2 Filter O / I ?ecnadepmI L1 Filter tupnI rehgih 0.069 ± 0.010 DIA. HOLE (2 PLACES) tuptuO rehgih edaceD / Bd 0C8Filter 60 dB / eDecade daceD / Bd 06 retliF80

pin configuration transistor bd140

Abstract: 2SD669 equivalent BUV44 bd140 equivalent transistor MJE15020 bd140 equivalent BD250C EQUIVALENT RCA122 2N6045 NPN POWER DARLINGTON TRANSISTOR BD 136
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium Power Silicon PNP Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 0.15 Adc • BD 136, 138, 140 are complementary with BD 135, 137, 139

BD138

Abstract: bd140 Complement BD136 bd139 Complement transistor BD140 BD135 BD137 BD139 BD140 power transistor bd136
Contextual Info: BD136/138/140 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD135, BD 137 and BD139 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Symbol C ollector Base Voltage :B D 1 3 6 : BD138 : BD140 C ollector E m itter Voltage : BD 136

Contextual Info: N AflER P H IL IP S / D IS C R E T E - ^ 5 3 ^ 3 1 2SE D O D l^ S A 1 • BD 241; BD 241A B D 241B ; BD 241C T - 23-// S IL IC O N E P IT A X IA L B A S E P O W E R T R A N S IS T O R S N-P-N silicon transistors in a plastic envelope intended fo r use in audio output stages, general amplifier

SLD3235VF

Abstract: SLD3234VF SLD3236VF SLD3234 SLD3236 405 laser SLD3235 SLD3236VFI SLD323 Laser Diode 405 nm
Contextual Info: HOME > Products Information List > Laser Diode > Laser Diodes f or BD Recording Laser Diodes for BD Recording Product na me Ope ra ting Fe a ture te mpe ra ture * 1 Topr °C Optica l pow e r Optica l pow e r output* 2 output* 1 Poma x (mW ) Po (mW ) Ope ra ting Ope ra ting

NT5TU32M16DG

Abstract: Nanya NT5TU32M16DG NT5T NT5TU32M16CG-25C NT5TU32M16CG-3CI NT5TU32M16CG NT5TU32M16CG-25DI nt5tu64m8 B.a Date sheet 2007 DDR2-667
Contextual Info: NT5TU128M4CE / NT5TU64M8CE / NT5TU32M16DG 512Mb DDR2 SDRAM Feature CAS Latency Frequency -37B/-37BI -3C/-3CI -25D/-25DI -25C/-25CI -BD -BD DDR2-533 DDR2-667 DDR2-800 DDR2-800 DDR2-1066 DDR2-1066 4-4-4 5-5-5 6-6-6 5-5-5 7-7-7 6-6-6 tCK Avg. 266 333 400 400

Contextual Info: SEM ICONDUCTOR tm MMBD1701/A /1703/A / 1704/A / 1705/A CONNECTION DIAGRAMS = 7 0 1 _ j3 f 1 1704 M M BD 1704 88 M M BD 1705 89 M M B D 1704A 88A M M B D 1705A 89A 2 NC T V +1 T 1 | 1703 ^ 2 ._ 1_ j1705 + 1 2 j High Conductance Low Leakage Diode Sourced from Process 1T.

Contextual Info: MOR SERIES FIXED METAL OXIDE FILM RESISTOR FLAME PROOF BD S ta n d a rd E IA C o lo r C o d e LD Mb LL BL DIMENSION Lead Wire BL BD MOR 1/2 3 .3 1 0.2 (.130) (.008) 2 71 1 .0 ' (1.063) (.039) 0 .7 1 0.05 (.028) (.002) MOR 1 11 : 1.0 ( 4331 ( 039) 3.8 ±0 .5

chn 537

Abstract: chn 638 CHN 536 chn 538 chn 53 b CHN 65 CHN 647 e8 gg 65vl BD 761
Contextual Info: \[]{},|,3/ =:761 =>.>2 <27.B 3GDRSPGQ X 9555V ^c_f_]nlc] mnl_hanb X Pbini cmif[ncih X Cocfn2ch mho\\_l Gcf_ Ni? F6889=6 X TRJBD BD ionjon X P[h_f giohn X ED il BD ]ihnlif DQD57556556>8; X Wcnb LFE ch^c][nil il hin 4292<.7 12=0<6;>6:9 Tb_ KHX26:5:GC i``_l 8287VED il >527=5VBD chjon ]ihnlif1qcnb