BD 235 Search Results

BUX 127

Abstract: bdw 51 52 BDX 241 mje 3001 BUX 115 8D243C TIP 107 bdx 679 BUX 34 BD 139 140
Contextual Info: POWER DISCRETE DEVICES ALPHA • NUMERICAL INDEX Typ« BD 135 BD 136 BD 137 BD 138 BD 139 BD 140 BD 142 BD 175 BD 176 BD 177 BD 178 BO 179 BD 180 BD 181 BD 182 BD 183 BD 233 BD 234 BD 235 BD 236 BD 237 BD 238 BD 239 BD 239A BD 239B BD 239C BD 240 BD 240A BD 240B

SDT 9202

Contextual Info: fK> \Pj F Q W f i P_t mmS.A. TYPE NPN PNP BD 135 BD136 BD 137 BD 138 BD 139 BD 140 BD 142 BD 181 BD 182 BD 183 BD 233 BD 234 BD 235 BD 236 BD 237 BD 238 $ BD 239 $ BD 240 $ BD 239A $ BD 240A $ BD 239B $ BD 240B $ BD 239C $ BD 240C $ BD 241 $ BD 242 $ BD 241A £ BD 242A

bd 640

Abstract: TOP-66 646 af bd640 BO 648 bd648 diode 648 648 diode BD 650 bd650
Contextual Info: 25C D • û23SbOS DQ043CJ1 S I ISIEG . [ PNP Silicon Darlington Transistors SIEMENS A K T I EN GE SE LLS C HA F *91 T-33-31 BD 644 BD 646 0 - BD 648 BD 650 Epibase power darlington transistors 62.5W BD 644, BD 646, BD 648, and BD 6 5 0 are monolithic PNP silicon epibase power darlington

BD237

Abstract: BD 235 BD233 SD235 BD235 BD 100 V BD 237 to 126 leistungstransistoren 32-DIN BD NPN transistors
Contextual Info: BD 233 * BD 235 - BD 237 Silizium-NPN-Epibasis-Leistungstransistoren Silicon NPN Epibase Power Transistors Anwendungen: Audio-Treiber- und Endstufen Applications: Audio driver and output stages Besondere Merkmale: • Hohe Spitzenleistung Features: • High peak power

amplificateur

Abstract: vertical tv deflexion BD233 bo236 BD NPN transistors bd 233 bd 237
Contextual Info: NPN SILICON TRANSISTORS, E P IT A X IA L BASE BD 233 TRANSISTORS SILICIUM NPN, BASE EPITAXIEE gg 2 .3 5 BD 237 Compl. o f BD 234, BO 236, BD 238 P R E LIM IN A R Y D A T A NOTICE PRELIMINAIRE These transistors are intended fo r complemen­ ta ry or quasi complementary sym etry amplifiers :

LT 238

Abstract: BD 238 BD234
Contextual Info: PNP SILICON TRANSISTORS, EPITAXIAL BASE BD 234 TRANSISTORS S IL IC IU M PNP, BASE E P IT A X IE S g Q 2 3 0 BD 238 Compl. of BD 233, 235, 237 PRELIMINARY DATA N O TICE P R E LIM IN A IR E These transistors are intended for complemen­ tary or quasi complementary symetry ampli­

Contextual Info: S1722 Family GNSS Module Data Sheet 17mmx 22.4mm GPS : S1722R8 / S1722F8 / S1722F8-RAW GPS/Beidou : S1722F8-BD / S1722F8-BD12 / S1722F8-BD-RAW GPS/GLONASS : S1722F8-GL / S1722F8-GL12 Revision 0.8 Date September 29, 2014 S1722 Features 167 Acquisition/Tracking Channels

TXD RXD

Contextual Info: RAD-UHF-SL-RS232-BD UHF Band Licensed Serial Data Radio INTERFACE Data Sheet 2352_en_A PHOENIX CONTACT - 04/2007 Description Features The RAD-UHF-SL-RS232-BD radio is a digital data radio modem for the most complex and demanding requirements in both Point-to-Point PTP and Point-to-Multipoint (PTMP)

Contextual Info: RAD-UHF-FL-RS232-BD/… UHF Band Licensed Serial Data Radio INTERFACE Data Sheet 2353_en_B PHOENIX CONTACT - 07/2007 Description Features The RAD-UHF-FL-RS232-BD/… radio is an advanced, high-speed, digital data radio modem for the most complex and demanding requirements in both Point-to-Point PTP

Contextual Info: BD Series High Temperature^ for +125°C FEATURES 1. Wide operating temperature range, it as long load life product at 125°C. 2. Suit for use in DC or pulse circuits in various electronic and industrial SPECIFICATIONS BD Item Performance Characteristics Operating Temperature Range

TO126

Abstract: CDIL BD238 BD233 BD234 BD238 BD235 BD236 BD237 bd 238 P BD238 continental
Contextual Info: ,6,62  /LF 46&/  Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS BD 233, 235, 237 BD 234, 236, 238 TO126 Plastic Package EC B Medium Power Liner and Switching Applications

pin configuration transistor bd140

Abstract: 2SD669 equivalent BUV44 bd140 equivalent transistor MJE15020 bd140 equivalent BD250C EQUIVALENT RCA122 2N6045 NPN POWER DARLINGTON TRANSISTOR BD 136
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium Power Silicon PNP Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 0.15 Adc • BD 136, 138, 140 are complementary with BD 135, 137, 139

resistance 47k ohm

Contextual Info: FIXED CARBON FILM RESISTORS KAMAYA OHM RD ¥Features 1. Three sizes are available : 1/6W ~ 1/2W. 2. Structure suitable for auto-insertion processing. 3. Stability Class : 5% ¥Dimensions Bd L H BD H Style RD1/6 RD1/4S RD1/4 RD1/2S Unit : mm L D H d *Unit weight/pc.

Fixed Carbon Film Resistors

Contextual Info: FIXED CARBON FILM RESISTORS KAMAYA OHM RD •Features 1. Three sizes are available : 1/6W ~ 1/2W. 2. Structure suitable for auto-insertion processing. 3. Stability Class : 5% •Dimensions Bd L H BD H Unit : mm Style RD1/6 RD1/4S RD1/4 RD1/2S L D H d *Unit weight/pc.

Contextual Info: FIXED CARBON FILM RESISTORS KAMAYA OHM RD •1. Features Three sizes are available : 1/6W ~ 1/2W. 2. Structure suitable for auto-insertion processing. 3. Stability Class : 5% •Dimensions Bd L H BD H Style RD1/6 RD1/4S RD1/4 RD1/2S Unit : mm L D H d *Unit weight/pc.

BD 139 N

Abstract: TOP-66 BD677N B0536 BD 139 140 B0680 BD139N BD139 SOT PL b0436
Contextual Info: Inventory o f discrete standard Types 9.1. Transistors Type P = PNP (N = NPN) Collector base reverse voltage V'oso ; v (V ces); BD 136 BD 137 Current gainbandw idth product / c; A fT; MHz P -45 -1 .5 50 N 60 -6 0 80 1.5 -1 .5 1.5 -80 45 -1 .5 2 50 50 >50

Contextual Info: BD234/236/238 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • Complement to BD 233/235/237 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Collector Base Voltage Symbol BD234 Rating VcBO BD236 BD238 Collector Emitter Voltage

60V transistor npn 1a

Contextual Info: BD233/235/237 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • Complement to BD 234/236/238 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Collector Base Voltage : BD233 Symbol Rating VcBO : BD235 : BD237 Unit 45 V

BD234

Abstract: bd238 bd238 equivalent BD236
Contextual Info: BD234/236/238 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS TO-126 • Complement to BD 233/235/237 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Symbol Rating Unit - 45 V : BD236 - 60 V : BD238

BD233

Abstract: BD235 BD237 transistor 45 f 123 bd233 T BD235 TRANSISTOR
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors BD233/235/237 TRANSISTOR NPN TO-126 FEATURES yComplement to BD 234/236/238 respectively MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO Parameter Collector-Base Voltage

bd237

Abstract: BD233
Contextual Info: BD233/235/237 BD233/235/237 Medium Power Linear and Switching Applications • Complement to BD 234/236/238 respectively TO-126 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Value Units

transistor BD 325

Abstract: BD235STU
Contextual Info: BD233/235/237 BD233/235/237 Medium Power Linear and Switching Applications • Complement to BD 234/236/238 respectively TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol

bd234

Contextual Info: BD234/236/238 BD234/236/238 Medium Power Linear and Switching Applications • Complement to BD 233/235/237 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol

c251c

Abstract: BD238 BD234
Contextual Info: BD234/236/238 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS TO-126 • Complement to BD 233/235/237 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Rating Unit -45 -60 V V -100 V -45 -60 V VcER