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    BD 441 442 Search Results

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    Untitled

    Abstract: No abstract text available
    Text: 12341567689A58BC4DE5 1 5 D9E5EF92555D922592512355 2 2 2 1 1 1 1 1 1 1 1  4%22 34%2 #4!672  672 !542 B62 62 62 892 52 4# 4!!42 !4%6%42


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    PDF 12341567689A58BC4DE5 5D9225 4420C 523D7 2B825 29E48 12345672892A2BCD3EFE

    transistor d325

    Abstract: TRANSISTOR BD 437 transistor BD 141 BD PNP 433 transistor d217 siemens BO 410 transistor BD transistor 433 Mhz d285
    Text: ESC D • Ô235b05 QQ043b3 M H S I E â NPN Silicon Epibase Transistors i - k , ■? j - H ' SIEMENS AKTIENGESELLSCHAF BD 433 BD 435 BD 437 BD 439 BD 441 The transistors BD 433, BD 435, BD 437, BD 439, and BD 441 are NPN silicon epibase power transistors in TO 126 plastic package 12 A 3 DIN 41 869, sheet 4 . The collector


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    PDF 053SbOS 00043L3 433/BD 435/BD 437/BD 439/BD 441/BD fl23Sfc ---0436r BD433. transistor d325 TRANSISTOR BD 437 transistor BD 141 BD PNP 433 transistor d217 siemens BO 410 transistor BD transistor 433 Mhz d285

    BD NPN transistors

    Abstract: BD 440 NPN transistors bdw 36 BD PNP BD 440 PNP transistors 434 NPN transistors BD 909 bd 911 BDw 32 LT 442
    Text: POWER TRANSISTORS continued > < > > m o _u UJ > o an c e h i u. _c d Cï> > < X ca E > BD 433 BD 434 BD 435 BD 436 BD 437 BD 438 BD 439 BD 440 BD 441 BD 442 BD 533 BD 534 BD 535 BD 536 BD 537 BD 538 BD 663 BD 664 BD 705 BD 706 BD 707 BD 708 BD 709 BD 710


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    PDF O-126 BD NPN transistors BD 440 NPN transistors bdw 36 BD PNP BD 440 PNP transistors 434 NPN transistors BD 909 bd 911 BDw 32 LT 442

    BD441

    Abstract: bd 426 BD 440 NPN transistors BD437 BD - 100 V BD 439 437 bd ic 437 BD439 B0439
    Text: « BD 437 • BD 439 • BD 441 'W Silizium-NPN-Epibasis-Leistungstransistoren Silicon NPN Epibase Power Transistors Anwendungen: Allgemein Im NF-Berelch Applications: General in AF-range Features: Besondere Merkmale: • Hohe Spitzenleistung • High peak power


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    PDF N125A BD441 bd 426 BD 440 NPN transistors BD437 BD - 100 V BD 439 437 bd ic 437 BD439 B0439

    se 130 n

    Abstract: BD441 BD442 439-BD
    Text: / Z T S C S -THOMSON BD 439-BD 440 ^ 7 # [M g^@[i^(0TO«ûS_ B D 441-B P 442 MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS D E S C R IP T IO N The BD439 and BD441 are silicon epitaxial-base NPN power transistors In Jedec TO-126 plastic package, intended for use in power linear and swit­


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    PDF 439-BD 441-B BD439 BD441 O-126 BD440 BD442 se 130 n BD441 BD442

    transistor BD 140

    Abstract: BD 140 transistor BD442 b0442 BD440 b0440 BD439 BD441 bd 140
    Text: BD440/442 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C o m p le m e n t to B D 4 3 9 , BD 441 re s p e c tiv e ly ABSOLUTE MAXIMUM RATINGS C h a r a c te r is t ic C o lle c to r B a s e V o lta g e C o lle c to r E m itte r V o lta g e


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    PDF BD440/442 BD439, BD441 transistor BD 140 BD 140 transistor BD442 b0442 BD440 b0440 BD439 bd 140

    bo434

    Abstract: b0436 TRANSISTOR BD 437 BD 434 transistor BD 141 BD436 DIN137 80442 transistor 438 Q62702-D202
    Text: - ESC D • ÖS35L.05 000M3bfl 3 M S I E â 8236320 SIEMENS/ SPCL. SEMICONDS • r- j w ? BD 434 PNP Silicon Epibase Transistors BD 436 J6 8 D _ SIEMENS AKTIEN6ESELLSCHAF - BD 438 BD 440 BD 442 Pow er transistors for com plem entary A F stages


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    PDF 00043bfl BD434 BD440 BD442 BD441. t25mn 434/BD 436/BD 023SbOS G00437H bo434 b0436 TRANSISTOR BD 437 BD 434 transistor BD 141 BD436 DIN137 80442 transistor 438 Q62702-D202

    power transistor mrc 438

    Abstract: mrc 436 mrc 438 transistor mrc 439 mrc 442 mrc 437 transistor bd 370 siemens d213 transistor BD 370 b mrc 439
    Text: - ESC D • ñ23SbQS 0Q043bfl 3 « S I E G 8236320 SIEMENS/ SPCL. SEMICONDS PNP Silicon Epibase Transistors SIEMENS AKTIENGESELLSCHAF J68 BD434 BD 436 D _ - BD 438 BD440 BD442 Power transistors for com plem entary AF stages The transistors BO 434, BD 436, BD 438, BD 440 and BD 442 are PNP silicon epibase


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    PDF 23SbQS 0Q043bfl BD434 BD440 BD442 434/BD 436/BD BD434. BD438. fl23SbO power transistor mrc 438 mrc 436 mrc 438 transistor mrc 439 mrc 442 mrc 437 transistor bd 370 siemens d213 transistor BD 370 b mrc 439

    BD 440 PNP transistors

    Abstract: BD PNP BD438 BD442 BD 438 b0438 b0440 BD440 BD - 100 V bd441
    Text: BD 438 - BD 440 - BD 442 Silizium-PNP-Epibasis-Leistungstransistoren Silicon PNP Epibase Power Transistors Anwendungen: Allgemein im NF-Bereich Applications: General in AF-range Besondere Merkmale: Features: • Hohe Spitzenleistung • Verlustleistung 36 W


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    PDF verb00 BD 440 PNP transistors BD PNP BD438 BD442 BD 438 b0438 b0440 BD440 BD - 100 V bd441

    Untitled

    Abstract: No abstract text available
    Text: BD440/442 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C o m p le m e n t to B D 4 3 9 , B D 441 re s p e c tiv e ly ABSOLUTE MAXIMUM RATINGS Characteristic C o lle c to r B a s e V o lta g e C o lle c to r E m itte r V o lta g e


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    PDF BD440/442

    BD 139 N

    Abstract: TOP-66 BD677N B0536 BD 139 140 B0680 BD139N BD139 SOT PL b0436
    Text: Inventory o f discrete standard Types 9.1. Transistors Type P = PNP (N = NPN) Collector base reverse voltage V'oso ; v (V ces); BD 136 BD 137 Current gainbandw idth product / c; A fT; MHz P -45 -1 .5 50 N 60 -6 0 80 1.5 -1 .5 1.5 -80 45 -1 .5 2 50 50 >50


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    PDF OT-32 BD 139 N TOP-66 BD677N B0536 BD 139 140 B0680 BD139N BD139 SOT PL b0436

    d439

    Abstract: D442 BD 440 NPN transistors bd 441 442
    Text: Gï SGS-THOMSON M K ilLlie?i©lì30ei BD439/BD440 BD441/BD442 COMPLEMENTARY SILICON POWER TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The BD439 and BD441 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic


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    PDF BD439/BD440 BD441/BD442 BD439 BD441 OT-32 BD440, BD442 BD440 d439 D442 BD 440 NPN transistors bd 441 442

    bc 540

    Abstract: TRANSISTOR BC 137 TRANSISTOR BC 187 transistor Bc 540 TRANSISTOR BC 136 bc 207 npn BC 677 bsv57b TRANSISTOR BD 187 BD 139 N
    Text: Power transistors for horizontal deflection output circuits Type Structure Fig. Nr. Characteristics Maximum ratings ptot at 'case = +90°c 7c :a v W A fj Notes at ^ CERM V M Hz rc mA ^ CEsat a / q and " F E V A BU 204 NPN 25 10.0 2.5 1300 7.5 100 S5 2.0 2.0


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    PDF BC1611) BCY58 BCY59 BD1361) BD436' BC432' BC547 bc 540 TRANSISTOR BC 137 TRANSISTOR BC 187 transistor Bc 540 TRANSISTOR BC 136 bc 207 npn BC 677 bsv57b TRANSISTOR BD 187 BD 139 N

    BUX 127

    Abstract: bdw 51 52 BDX 241 mje 3001 BUX 115 8D243C TIP 107 bdx 679 BUX 34 BD 139 140
    Text: POWER DISCRETE DEVICES ALPHA • NUMERICAL INDEX Typ« BD 135 BD 136 BD 137 BD 138 BD 139 BD 140 BD 142 BD 175 BD 176 BD 177 BD 178 BO 179 BD 180 BD 181 BD 182 BD 183 BD 233 BD 234 BD 235 BD 236 BD 237 BD 238 BD 239 BD 239A BD 239B BD 239C BD 240 BD 240A BD 240B


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    PDF BD244B BD379 BD380 BD434 BD435 BD440 BD681 BD682 BD712 BD905 BUX 127 bdw 51 52 BDX 241 mje 3001 BUX 115 8D243C TIP 107 bdx 679 BUX 34 BD 139 140

    transistor BD 677

    Abstract: BD 675 BD675 677d
    Text: ES C T> m ÔEBSbOS 00043^5 b H S I E 6 NPN Silicon Darlington Transistors SIEMENS AKTIENGESELLSCHAF Î5C °*395 T-33-29 ~ BD 675 BD 677 D BD 679 Epibase power darlington transistors 40 W BD 675, BD 677, and BD 679 are monolithic NPN silicon epibase power darlington


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    PDF T-33-29 BD679 a23SbOS 00043RS BD675, transistor BD 677 BD 675 BD675 677d

    SDT 9202

    Abstract: No abstract text available
    Text: fK> \Pj F Q W f i P_t mmS.A. TYPE NPN PNP BD 135 BD136 BD 137 BD 138 BD 139 BD 140 BD 142 BD 181 BD 182 BD 183 BD 233 BD 234 BD 235 BD 236 BD 237 BD 238 $ BD 239 $ BD 240 $ BD 239A $ BD 240A $ BD 239B $ BD 240B $ BD 239C $ BD 240C $ BD 241 $ BD 242 $ BD 241A £ BD 242A


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    PDF BD136 O-126 O-220 SDT 9202

    PWA-6133

    Abstract: DA 5033 AD143 PWA-6033
    Text: 50 49 48 47 4 6 -4 4 6 -3 4 6 -2 46-1 46 45 4 4 -5 4 4 -4 4 4 -3 4 4 -2 44-1 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 -1 4 3 2 1 ITEM / / / / — vJO Li 0 -6 .05 0.1 30~80 .15 .25


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    PDF 523XXXXXXXXX 451XXXXXXXXX 52346655XXXX 4426658XXXXX 4116661XXXXX 34666540001MCIA PWA-6133 DA 5033 AD143 PWA-6033

    3055t

    Abstract: bdw 51 52 SGS TIP 32 mj 3055 npn 2955t B0536 bd 911 mj 2955 npn bd 3055 TIP 3771
    Text: Æ J SGS-THOMSON ^ 7# RiiOtglKiiiILKgTORODÊi GENERAL PURPOSE & INDUSTRIAL POWER BIPOLAR EPITAXIAL BASE TRANSISTORS Continued •c v CBO v CEO Package ptot Tyipe NPN PNP hFE Î <C 1 VCE v CEsat ic 1 •b min (A) (V) (V) (W| 3 3 3 3 3 80 80 90 100 115


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    PDF 2N5190 3055t bdw 51 52 SGS TIP 32 mj 3055 npn 2955t B0536 bd 911 mj 2955 npn bd 3055 TIP 3771

    SDT 9202

    Abstract: bdx 338 BU 450 bdx
    Text: ALPHANUMERIC BC 107. .73 BC 108. .73 BC 109. .73 BC 170. .74 BC 171. .74 BC 172. .74 BC 173. .74 BC 174. .74 BC 177. .73 BC 178. .73 BC 179. .73 BC 190. .73 BC 237. .74 BC 238. .74 BC 239. .74 BC 250. .74


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    bdx35b

    Abstract: BDX35 BDX36
    Text: BDX35 BDX36 BDX37 SILICON PLANAR EPITAXIAL POWER TRANSISTORS N-P-N transistors in TO -126 plastic packages intended fo r high cu rre n t sw itching applications, e.g. inverters, and sw itch in g regulator circuits. QUICK REFERENCE D A T A Collector-base voltage open e m itte r


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    PDF BDX35 BDX36 BDX37 bdx35b

    Untitled

    Abstract: No abstract text available
    Text: • fl235b05 D D A1 57 5 05b I SIEMENS PROFET B T S 4 1 0 F 2 Smart Highside Power Switch Product Summary Overvoltage protection Operating voltage On-state resistance Load current ISO Current limitation Features • • • • • • • • Overload protection


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    PDF fl235b05 BTS410F2 6235b05

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


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    motorola power transistor to-126

    Abstract: B0433 B0435 BD435 BD437 BD435i B0437 motorola 80439 BD433 BD439
    Text: MOTOROLA SC -CXSTRS/R F3- 6 3 6 7 2 54 MOTOROLA- SC DE J b 3 t i 7 B S l4 00005=13 T 96 D X S T R S i R _F D 80593 -r~ BD433, BD435 BD437, BD439 BD441 MOTOROLA m SEMICONDUCTOR TECHNICAL DATA 4 AMPERE POWER TRANSISTOR NPN SILICON PLASTIC M EDIUM POWER SILICON


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    PDF b3b7a54 00flGST3 BD434/436/438/440/442 BD433 BD435 BD437 BD439 BD441 motorola power transistor to-126 B0433 B0435 BD435i B0437 motorola 80439

    elec-trol

    Abstract: bd1h1 BH electrolytic CAPACITORS 4.7 mfd
    Text: G E Pow er Electrolytic Capacitors 8 5 ° C Product 2 0 0 to 4 5 0 W V D C 1 5 0 to 1 5 ,0 0 0 uF 23H SERIES INVERTER GRADE PRODUCT LINE • Broad Capacitance Range • Increased Volumetric Efficien cy • Lo w E S R • Standard Ratings (General Specifications


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