Untitled
Abstract: No abstract text available
Text: 12341567689A58BC4DE5 1 5 D9E5EF92555D922592512355 2 2 2 1 1 1 1 1 1 1 1 4%22 34%2 #4!672 672 !542 B62 62 62 892 52 4# 4!!42 !4%6%42
|
Original
|
PDF
|
12341567689A58BC4DE5
5D9225
4420C
523D7
2B825
29E48
12345672892A2BCD3EFE
|
transistor d325
Abstract: TRANSISTOR BD 437 transistor BD 141 BD PNP 433 transistor d217 siemens BO 410 transistor BD transistor 433 Mhz d285
Text: ESC D • Ô235b05 QQ043b3 M H S I E â NPN Silicon Epibase Transistors i - k , ■? j - H ' SIEMENS AKTIENGESELLSCHAF BD 433 BD 435 BD 437 BD 439 BD 441 The transistors BD 433, BD 435, BD 437, BD 439, and BD 441 are NPN silicon epibase power transistors in TO 126 plastic package 12 A 3 DIN 41 869, sheet 4 . The collector
|
OCR Scan
|
PDF
|
053SbOS
00043L3
433/BD
435/BD
437/BD
439/BD
441/BD
fl23SfcÂ
---0436r
BD433.
transistor d325
TRANSISTOR BD 437
transistor BD 141
BD PNP
433 transistor
d217 siemens
BO 410
transistor BD
transistor 433 Mhz
d285
|
BD NPN transistors
Abstract: BD 440 NPN transistors bdw 36 BD PNP BD 440 PNP transistors 434 NPN transistors BD 909 bd 911 BDw 32 LT 442
Text: POWER TRANSISTORS continued > < > > m o _u UJ > o an c e h i u. _c d Cï> > < X ca E > BD 433 BD 434 BD 435 BD 436 BD 437 BD 438 BD 439 BD 440 BD 441 BD 442 BD 533 BD 534 BD 535 BD 536 BD 537 BD 538 BD 663 BD 664 BD 705 BD 706 BD 707 BD 708 BD 709 BD 710
|
OCR Scan
|
PDF
|
O-126
BD NPN transistors
BD 440 NPN transistors
bdw 36
BD PNP
BD 440 PNP transistors
434 NPN transistors
BD 909
bd 911
BDw 32
LT 442
|
BD441
Abstract: bd 426 BD 440 NPN transistors BD437 BD - 100 V BD 439 437 bd ic 437 BD439 B0439
Text: « BD 437 • BD 439 • BD 441 'W Silizium-NPN-Epibasis-Leistungstransistoren Silicon NPN Epibase Power Transistors Anwendungen: Allgemein Im NF-Berelch Applications: General in AF-range Features: Besondere Merkmale: • Hohe Spitzenleistung • High peak power
|
OCR Scan
|
PDF
|
N125A
BD441
bd 426
BD 440 NPN transistors
BD437
BD - 100 V
BD 439
437 bd
ic 437
BD439
B0439
|
se 130 n
Abstract: BD441 BD442 439-BD
Text: / Z T S C S -THOMSON BD 439-BD 440 ^ 7 # [M g^@[i^(0TO«ûS_ B D 441-B P 442 MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS D E S C R IP T IO N The BD439 and BD441 are silicon epitaxial-base NPN power transistors In Jedec TO-126 plastic package, intended for use in power linear and swit
|
OCR Scan
|
PDF
|
439-BD
441-B
BD439
BD441
O-126
BD440
BD442
se 130 n
BD441 BD442
|
transistor BD 140
Abstract: BD 140 transistor BD442 b0442 BD440 b0440 BD439 BD441 bd 140
Text: BD440/442 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C o m p le m e n t to B D 4 3 9 , BD 441 re s p e c tiv e ly ABSOLUTE MAXIMUM RATINGS C h a r a c te r is t ic C o lle c to r B a s e V o lta g e C o lle c to r E m itte r V o lta g e
|
OCR Scan
|
PDF
|
BD440/442
BD439,
BD441
transistor BD 140
BD 140 transistor
BD442
b0442
BD440
b0440
BD439
bd 140
|
bo434
Abstract: b0436 TRANSISTOR BD 437 BD 434 transistor BD 141 BD436 DIN137 80442 transistor 438 Q62702-D202
Text: - ESC D • ÖS35L.05 000M3bfl 3 M S I E â 8236320 SIEMENS/ SPCL. SEMICONDS • r- j w ? BD 434 PNP Silicon Epibase Transistors BD 436 J6 8 D _ SIEMENS AKTIEN6ESELLSCHAF - BD 438 BD 440 BD 442 Pow er transistors for com plem entary A F stages
|
OCR Scan
|
PDF
|
00043bfl
BD434
BD440
BD442
BD441.
t25mn
434/BD
436/BD
023SbOS
G00437H
bo434
b0436
TRANSISTOR BD 437
BD 434
transistor BD 141
BD436
DIN137
80442
transistor 438
Q62702-D202
|
power transistor mrc 438
Abstract: mrc 436 mrc 438 transistor mrc 439 mrc 442 mrc 437 transistor bd 370 siemens d213 transistor BD 370 b mrc 439
Text: - ESC D • ñ23SbQS 0Q043bfl 3 « S I E G 8236320 SIEMENS/ SPCL. SEMICONDS PNP Silicon Epibase Transistors SIEMENS AKTIENGESELLSCHAF J68 BD434 BD 436 D _ - BD 438 BD440 BD442 Power transistors for com plem entary AF stages The transistors BO 434, BD 436, BD 438, BD 440 and BD 442 are PNP silicon epibase
|
OCR Scan
|
PDF
|
23SbQS
0Q043bfl
BD434
BD440
BD442
434/BD
436/BD
BD434.
BD438.
fl23SbO
power transistor mrc 438
mrc 436
mrc 438
transistor mrc 439
mrc 442
mrc 437
transistor bd 370
siemens d213
transistor BD 370 b
mrc 439
|
BD 440 PNP transistors
Abstract: BD PNP BD438 BD442 BD 438 b0438 b0440 BD440 BD - 100 V bd441
Text: BD 438 - BD 440 - BD 442 Silizium-PNP-Epibasis-Leistungstransistoren Silicon PNP Epibase Power Transistors Anwendungen: Allgemein im NF-Bereich Applications: General in AF-range Besondere Merkmale: Features: • Hohe Spitzenleistung • Verlustleistung 36 W
|
OCR Scan
|
PDF
|
verb00
BD 440 PNP transistors
BD PNP
BD438
BD442
BD 438
b0438
b0440
BD440
BD - 100 V
bd441
|
Untitled
Abstract: No abstract text available
Text: BD440/442 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C o m p le m e n t to B D 4 3 9 , B D 441 re s p e c tiv e ly ABSOLUTE MAXIMUM RATINGS Characteristic C o lle c to r B a s e V o lta g e C o lle c to r E m itte r V o lta g e
|
OCR Scan
|
PDF
|
BD440/442
|
BD 139 N
Abstract: TOP-66 BD677N B0536 BD 139 140 B0680 BD139N BD139 SOT PL b0436
Text: Inventory o f discrete standard Types 9.1. Transistors Type P = PNP (N = NPN) Collector base reverse voltage V'oso ; v (V ces); BD 136 BD 137 Current gainbandw idth product / c; A fT; MHz P -45 -1 .5 50 N 60 -6 0 80 1.5 -1 .5 1.5 -80 45 -1 .5 2 50 50 >50
|
OCR Scan
|
PDF
|
OT-32
BD 139 N
TOP-66
BD677N
B0536
BD 139 140
B0680
BD139N
BD139
SOT PL
b0436
|
d439
Abstract: D442 BD 440 NPN transistors bd 441 442
Text: Gï SGS-THOMSON M K ilLlie?i©lì30ei BD439/BD440 BD441/BD442 COMPLEMENTARY SILICON POWER TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The BD439 and BD441 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic
|
OCR Scan
|
PDF
|
BD439/BD440
BD441/BD442
BD439
BD441
OT-32
BD440,
BD442
BD440
d439
D442
BD 440 NPN transistors
bd 441 442
|
bc 540
Abstract: TRANSISTOR BC 137 TRANSISTOR BC 187 transistor Bc 540 TRANSISTOR BC 136 bc 207 npn BC 677 bsv57b TRANSISTOR BD 187 BD 139 N
Text: Power transistors for horizontal deflection output circuits Type Structure Fig. Nr. Characteristics Maximum ratings ptot at 'case = +90°c 7c :a v W A fj Notes at ^ CERM V M Hz rc mA ^ CEsat a / q and " F E V A BU 204 NPN 25 10.0 2.5 1300 7.5 100 S5 2.0 2.0
|
OCR Scan
|
PDF
|
BC1611)
BCY58
BCY59
BD1361)
BD436'
BC432'
BC547
bc 540
TRANSISTOR BC 137
TRANSISTOR BC 187
transistor Bc 540
TRANSISTOR BC 136
bc 207 npn
BC 677
bsv57b
TRANSISTOR BD 187
BD 139 N
|
BUX 127
Abstract: bdw 51 52 BDX 241 mje 3001 BUX 115 8D243C TIP 107 bdx 679 BUX 34 BD 139 140
Text: POWER DISCRETE DEVICES ALPHA • NUMERICAL INDEX Typ« BD 135 BD 136 BD 137 BD 138 BD 139 BD 140 BD 142 BD 175 BD 176 BD 177 BD 178 BO 179 BD 180 BD 181 BD 182 BD 183 BD 233 BD 234 BD 235 BD 236 BD 237 BD 238 BD 239 BD 239A BD 239B BD 239C BD 240 BD 240A BD 240B
|
OCR Scan
|
PDF
|
BD244B
BD379
BD380
BD434
BD435
BD440
BD681
BD682
BD712
BD905
BUX 127
bdw 51 52
BDX 241
mje 3001
BUX 115
8D243C
TIP 107
bdx 679
BUX 34
BD 139 140
|
|
transistor BD 677
Abstract: BD 675 BD675 677d
Text: ES C T> m ÔEBSbOS 00043^5 b H S I E 6 NPN Silicon Darlington Transistors SIEMENS AKTIENGESELLSCHAF Î5C °*395 T-33-29 ~ BD 675 BD 677 D BD 679 Epibase power darlington transistors 40 W BD 675, BD 677, and BD 679 are monolithic NPN silicon epibase power darlington
|
OCR Scan
|
PDF
|
T-33-29
BD679
a23SbOS
00043RS
BD675,
transistor BD 677
BD 675
BD675
677d
|
SDT 9202
Abstract: No abstract text available
Text: fK> \Pj F Q W f i P_t mmS.A. TYPE NPN PNP BD 135 BD136 BD 137 BD 138 BD 139 BD 140 BD 142 BD 181 BD 182 BD 183 BD 233 BD 234 BD 235 BD 236 BD 237 BD 238 $ BD 239 $ BD 240 $ BD 239A $ BD 240A $ BD 239B $ BD 240B $ BD 239C $ BD 240C $ BD 241 $ BD 242 $ BD 241A £ BD 242A
|
OCR Scan
|
PDF
|
BD136
O-126
O-220
SDT 9202
|
PWA-6133
Abstract: DA 5033 AD143 PWA-6033
Text: 50 49 48 47 4 6 -4 4 6 -3 4 6 -2 46-1 46 45 4 4 -5 4 4 -4 4 4 -3 4 4 -2 44-1 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 -1 4 3 2 1 ITEM / / / / — vJO Li 0 -6 .05 0.1 30~80 .15 .25
|
OCR Scan
|
PDF
|
523XXXXXXXXX
451XXXXXXXXX
52346655XXXX
4426658XXXXX
4116661XXXXX
34666540001MCIA
PWA-6133
DA 5033
AD143
PWA-6033
|
3055t
Abstract: bdw 51 52 SGS TIP 32 mj 3055 npn 2955t B0536 bd 911 mj 2955 npn bd 3055 TIP 3771
Text: Æ J SGS-THOMSON ^ 7# RiiOtglKiiiILKgTORODÊi GENERAL PURPOSE & INDUSTRIAL POWER BIPOLAR EPITAXIAL BASE TRANSISTORS Continued •c v CBO v CEO Package ptot Tyipe NPN PNP hFE Î <C 1 VCE v CEsat ic 1 •b min (A) (V) (V) (W| 3 3 3 3 3 80 80 90 100 115
|
OCR Scan
|
PDF
|
2N5190
3055t
bdw 51 52
SGS TIP 32
mj 3055 npn
2955t
B0536
bd 911
mj 2955 npn
bd 3055
TIP 3771
|
SDT 9202
Abstract: bdx 338 BU 450 bdx
Text: ALPHANUMERIC BC 107. .73 BC 108. .73 BC 109. .73 BC 170. .74 BC 171. .74 BC 172. .74 BC 173. .74 BC 174. .74 BC 177. .73 BC 178. .73 BC 179. .73 BC 190. .73 BC 237. .74 BC 238. .74 BC 239. .74 BC 250. .74
|
OCR Scan
|
PDF
|
|
bdx35b
Abstract: BDX35 BDX36
Text: BDX35 BDX36 BDX37 SILICON PLANAR EPITAXIAL POWER TRANSISTORS N-P-N transistors in TO -126 plastic packages intended fo r high cu rre n t sw itching applications, e.g. inverters, and sw itch in g regulator circuits. QUICK REFERENCE D A T A Collector-base voltage open e m itte r
|
OCR Scan
|
PDF
|
BDX35
BDX36
BDX37
bdx35b
|
Untitled
Abstract: No abstract text available
Text: • fl235b05 D D A1 57 5 05b I SIEMENS PROFET B T S 4 1 0 F 2 Smart Highside Power Switch Product Summary Overvoltage protection Operating voltage On-state resistance Load current ISO Current limitation Features • • • • • • • • Overload protection
|
OCR Scan
|
PDF
|
fl235b05
BTS410F2
6235b05
|
Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
|
OCR Scan
|
PDF
|
|
motorola power transistor to-126
Abstract: B0433 B0435 BD435 BD437 BD435i B0437 motorola 80439 BD433 BD439
Text: MOTOROLA SC -CXSTRS/R F3- 6 3 6 7 2 54 MOTOROLA- SC DE J b 3 t i 7 B S l4 00005=13 T 96 D X S T R S i R _F D 80593 -r~ BD433, BD435 BD437, BD439 BD441 MOTOROLA m SEMICONDUCTOR TECHNICAL DATA 4 AMPERE POWER TRANSISTOR NPN SILICON PLASTIC M EDIUM POWER SILICON
|
OCR Scan
|
PDF
|
b3b7a54
00flGST3
BD434/436/438/440/442
BD433
BD435
BD437
BD439
BD441
motorola power transistor to-126
B0433
B0435
BD435i
B0437
motorola 80439
|
elec-trol
Abstract: bd1h1 BH electrolytic CAPACITORS 4.7 mfd
Text: G E Pow er Electrolytic Capacitors 8 5 ° C Product 2 0 0 to 4 5 0 W V D C 1 5 0 to 1 5 ,0 0 0 uF 23H SERIES INVERTER GRADE PRODUCT LINE • Broad Capacitance Range • Increased Volumetric Efficien cy • Lo w E S R • Standard Ratings (General Specifications
|
OCR Scan
|
PDF
|
|