bd 551
Abstract: BD-E401RD BD-E311RD BD-E312RD BD-E313RD BD-E314RD BD-E315RD BD-E315RE BD-E316RD BD-E31DRD
Text: Part No. Digit Size 0.30" Dual-Digit 0.36" Dual-Digit 0.39" Dual-Digit 0.40" Dual-Digit 0.40" Dual-Digit Absolute Maximum Ratings Chip Common Anode Common Cathode BD-E311RD BD-E315RD BD-E315RE BD-E312RD BD-E313RD BD-F311RD BD-F315RD BD-F315RE BD-F312RD BD-F313RD
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BD-F314RD
BD-E316RD
BD-E31DRD
BD-E321RD
BD-E325RD
BD-E325RE
BD-E322RD
BD-E323RD
BD-F316RD
BD-F31DRD
bd 551
BD-E401RD
BD-E311RD
BD-E312RD
BD-E313RD
BD-E314RD
BD-E315RD
BD-E315RE
BD-E316RD
BD-E31DRD
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BD-E401RD
Abstract: BD-E311RD BD-E312RD BD-E313RD BD-E314RD BD-E315RD BD-E315RE BD-E316RD BD-E31DRD BD-E321RD
Text: SINCE 1981 Part No. Digit Size 0.30" Dual-Digit 0.36" Dual-Digit 0.39" Dual-Digit 0.40" Dual-Digit 0.40" Dual-Digit Absolute Maximum Ratings Chip Common Anode Common Cathode BD-E311RD BD-E315RD BD-E315RE BD-E312RD BD-E313RD BD-F311RD BD-F315RD BD-F315RE BD-F312RD
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BD-F314RD
BD-E316RD
BD-E31DRD
BD-E321RD
BD-E325RD
BD-E325RE
BD-E322RD
BD-E323RD
BD-F316RD
BD-F31DRD
BD-E401RD
BD-E311RD
BD-E312RD
BD-E313RD
BD-E314RD
BD-E315RD
BD-E315RE
BD-E316RD
BD-E31DRD
BD-E321RD
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BD-E324RD
Abstract: No abstract text available
Text: BRIGHT LED ELECTRONICS CORP. BD-E324RD SINCE 1981 ● Features : ● 1. 0.36 inch 9.20mm Digit Height. 2. Continuous uniform segments. 3. Low power requirement. 4. Excellent characters appearance. 5. Solid state reliability. 6. Categorized for luminous intensity.
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BD-E324RD
BD-E324Relength
BD-E324RD
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BD-F326RD
Abstract: No abstract text available
Text: BRIGHT LED ELECTRONICS CORP. BD-F326RD SINCE 1981 ● ● Features : 1. 0.36 inch 9.20mm Digit Height. 2. Continuous uniform segments. 3. Low power requirement. 4. Excellent characters appearance. 5. Solid state reliability. 6. Categorized for luminous intensity.
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BD-F326RD
BD-F326RDis
BD-F326RD
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BD-F322RD
Abstract: No abstract text available
Text: BRIGHT LED ELECTRONICS CORP. BD-F322RD SINCE 1981 ● Features : ● 1. 0.36 inch 9.20mm Digit Height. 2. Continuous uniform segments. 3. Low power requirement. 4. Excellent characters appearance. 5. Solid state reliability. 6. Categorized for luminous intensity.
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BD-F322RD
BD-F322RD
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BD-E323RD
Abstract: No abstract text available
Text: BRIGHT LED ELECTRONICS CORP. BD-E323RD SINCE 1981 ● Features : ● 1. 0.36 inch 9.20mm Digit Height. 2. Continuous uniform segments. 3. Low power requirement. 4. Excellent characters appearance. 5. Solid state reliability. 6. Categorized for luminous intensity.
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BD-E323RD
BD-E323RD
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Untitled
Abstract: No abstract text available
Text: BRIGHT LED ELECTRONICS CORP. BD-A402ND-CAP SINCE 1981 ● Features : 1. 0.40 inch 10.16mm Digit Height. 2. Continuous uniform segments. 3. Low power requirement. 4. Excellent characters appearance. 5. Solid state reliability. 6. Categorized for luminous intensity.
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BD-A402ND-CAP
BD-A402ND-CAP
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BD-E326RD
Abstract: No abstract text available
Text: BRIGHT LED ELECTRONICS CORP. BD-E326RD For : 高詰 SINCE 1981 ● Features : ● 1. 0.36 inch 9.20mm Digit Height. 2. Continuous uniform segments. 3. Low power requirement. 4. Excellent characters appearance. 5. Solid state reliability. 6. Categorized for luminous intensity.
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BD-E326RD
BD-E326RD
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display 7 segments
Abstract: No abstract text available
Text: BRIGHT LED ELECTRONICS CORP. BD-E32BJRD SINCE 1981 ● 1. Features : ● Package Dimensions : 0.36 inch 9.20mm Digit Height. 2. Continuous uniform segments. 3. Low power requirement. 4. Excellent characters appearance. 5. Solid state reliability. 6. Categorized for luminous intensity.
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BD-E32BJRD
BD-E32BJRD
display 7 segments
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Untitled
Abstract: No abstract text available
Text: Note: All part numbers are RoHS Compliant. BUCHANAN Terminal Blocks 0.375” [9.53] Pitch, Series JC6 JC6-P107-03 Ordering Information JC6 - P 1 07 - 06 A Material & Finish D E B Terminal Style C = Non Feed Thru E = Extended Circ. Bd. F = Quick Connect, .187
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JC6-P107-03
LR30811
E54800
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P1027
Abstract: P1027-BD ka-band transistor 30SPA0536 DM6030HK XP1027-BD XP1027-BD-000V XP1027-BD-EV1 VG07
Text: 27.0-31.0 GHz GaAs MMIC Power Amplifier P1027-BD January 2010 - Rev 25-Jan-10 Features Ka-Band 4 W Power Amplifier Balanced Design Provides Good Input/Output Match 21.0 dB Small Signal Gain +35.5 dBm Saturated Output Power +43.0 dBm Output Third Order Intercept OIP3
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P1027-BD
25-Jan-10
MIL-STD-883
XP1027-BD
P1027
P1027-BD
ka-band transistor
30SPA0536
DM6030HK
XP1027-BD-000V
XP1027-BD-EV1
VG07
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Untitled
Abstract: No abstract text available
Text: 27.0-31.0 GHz GaAs MMIC Power Amplifier P1027-BD March 2009 - Rev 11-Mar-09 Features Ka-Band 4 W Power Amplifier Balanced Design Provides Good Input/Output Match 21.0 dB Small Signal Gain +35.5 dBm Saturated Output Power +43.0 dBm Output Third Order Intercept OIP3
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P1027-BD
11-Mar-09
MIL-STD-883
XP1027-BD-000V
XP1027-BD-EV1
XP1027-BD
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Untitled
Abstract: No abstract text available
Text: MQ CONNECTOR 2,0m m Bd^4ohdM C* * ; *„w> «* - <• V- T.-1' .079" pitch Features-• Back-up support spring construction Each socket contact in this protected entry connector consists of two independently functioning and redundant contact spring
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y-138)
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Untitled
Abstract: No abstract text available
Text: J BDV65; 65A BDV65B; 65C v _ _ SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial base transistors in m onolithic Darlington circuit fo r audio output stages and general am plifier and switching applications. PNP complements are BD V 64, 64B and 64C.
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BDV65;
BDV65B;
bb53T31
003Mflm
BDV65B:
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LLR06
Abstract: No abstract text available
Text: BD R esistors Rectangular Chip Temperature-sensitive Resistors Type R ated dissipation 70 C Maxim um w orking voltage (V) Resistor temperature coefficient (ppm/ C) R esistance tolerance Resistance range MTSR18 1/20W (0 05W) 50 + 15001 150 J (15% ) 5.1kU, 10 k ii
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1/20W
MTSR18
LLR06
LLR10
LLR25
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APY12
Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
Text: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP
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Edition-1978)
Ausgabe-1978)
BS3934
SO-26
OT-114
NS371
APY12
BYY32
ac176
AEY26
BAV77
bby20
BD545B
BAV27
transistor KT 209 M
AF367
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2061 D
Abstract: Y060 BD 147
Text: M IL-T-55155 Terminals -~| ORDER BY PART NO. h D . NOM. 2030 A BD THICK MTG HOLE .053 .031 +.003 .062 .084 .062 .064 2030 C DIA. .115 .094 -.001 .125 DIA. .147 M H .-Ï - 5 5 I 5 5 / 1 M O . II. 1 2 .& SWAGE TOOL L .0 9 4 D IA . .031 D IA . D * ;o ° 5 J / 0 2 ° -
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IL-T-55155
2061 D
Y060
BD 147
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W9394
Abstract: W93B darlington bd
Text: r Z 7 SGS-THOMSON “ 7# BDW93/A/B/C BDW94/A/B/C NPN/PNP POWER DARLINGTONS DESCRIPTION The BDW93, BDW93A, BD W 93Band BDW 93C are silicon epitaxial-base NPN transistors in monolithic Darlington configuration and are mounted in Jedec TO-220 plastic package. They are intended for use
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BDW93/A/B/C
BDW94/A/B/C
BDW93,
BDW93A,
93Band
O-220
BDW94,
BDW94A,
BDW94B
W9394
W93B
darlington bd
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Untitled
Abstract: No abstract text available
Text: 7 THIS DRAWING 15 UNPUBLISHED. RELEASED FOR PUBLICATION COPYRIGHT 19 BY AMP INCORPORATED. 4 ,19 LOC ALL RIGHTS RESERVED. REVISIONS DIST 26 BD LTR B C D DESCRIPTION RLSE -1 PER NPR 5456 WAS 95-4264-20 REV PER EC REV PER EC REV PER EC REV PER EC 0410-95-96 0410-198-97
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76jim
06-FEB-
amp34723
e/ssrv026d/dsk04/dept4023/amp34723/edmmod
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BM 1313
Abstract: 787761-2
Text: 7 THIS DRAWING 15 UNPUBLISHED. COPYRIGHT 19 RELEASED FOR PUBLICATION BY AMP INCORPORATED. 4 ,19 LOC ALL RIGHTS RESERVED. BD REVISIONS DIST 39 LTR B DIA B D 4 PLC WAS 96-3936-2-1 & -2 REV PER EC 0420-114-96 RLSE -3 AND REVISED PER O -A- 0 9 NAY 9G DB RW 21
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76jjm
27jjm
amp34993
e/ssrv026d/dsk02/dept4029/amp34993/edmmod
BM 1313
787761-2
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BM 1313
Abstract: 16298 787745
Text: 7 THIS DRAWING 15 UNPUBLISHED. COPYRIGHT 19 RELEASED FOR PUBLICATION BY AMP INCORPORATED. 4 ,19 LOC ALL RIGHTS RESERVED. DIST BD R E V ISIO N S 39 LTR B C D DATE DUN APVD 1Û NAY 9G DB RW 20 MAY 96 21 NAY 97 CR RPW DB DK DB BM I 5 SEP 97 DB BM 29 JUL 98 PB
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076jim
76jjm
80jim
29-JUL-
e/55rv026d/dsk04/dept4023/amp11676/edmmod
BM 1313
16298
787745
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BD135-BD137-BD139
Abstract: bd139 BD139 amplifier BD139I st BD139 BD135,BD137,BD139 BD135 Toshiba Bd135 st BD137 toshiba
Text: "st, TOSHIBA {DISCRETE/OPTO} SILICON NPN EPITA X IA L TYPE PCT PROCESS 9097250 TO SH IBA DÊj| TOTVSSD OQOÖObfl S B D 1 3 7 BD 139I 5ôC (D ISCR ETE/O PTO ) 08Û68 o r- MEDIUM POWER AMPLIFIER APPLICATIONS. 3 3 ~ û 5j Unit in mm 7.9 MAX, FEATURES: . Designed for Complementary Use with BD136, BD138
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BD137
BD139I
BD136,
BD138
BD140.
BD135
BD139
BD135-BD137-BD139
BD139 amplifier
BD139I
st BD139
BD135,BD137,BD139
BD135 Toshiba
Bd135 st
BD137 toshiba
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Untitled
Abstract: No abstract text available
Text: SUNCON o > •§ 5 g 3. 2. 5 S | CO 3 m a3 CD % o • 10 5 t!, 1,000 to 2,000hrs. • Solvent proof within 2 minutes ■ Specifications Items Condition Rated volta ge (V) Surge vo lta g e (V) Specifications 6 .3 10 16 25 35 50 8 .0 13 20 32 44 63 CE-BE CE-BD
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000hrs.
120HZ/20TC
100kHz.
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Untitled
Abstract: No abstract text available
Text: 4 T H I S DRAWING 7 R E L E A S E D FOR P U B L I C A T I O N I S U N P U B L IS H E D . CO PYRIGHT BY AMP INCORPORATED. 19 2 3 ,19 LOC AL L R IG H T S R E S E R V E D . BD D IST REVISIONS 26 DESCRIPTION LTR RELEASED -1 4 . 0 0 [ . 551 ] -20 0 0 [ .787]
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0G40-53-99
51A-0069-99
GUA55
GR55N
11J0N97
10-5EP-99
arnp45S76
/home/arnp45876/edmmod
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