BD MARKING Search Results

D 1703

Contextual Info: M IC D N D U C T D R i MMBD1701 M M BD 1703 M M BD 1704 M M BD 1705 SOT-23 MARKING 85 M M BD 1701A 87 M M BD 1703A 88 M M BD 1704A 89 M M BD 1705A / 1703/A / 1704/A / 1705/A MMBD1701/A / 1703/A / 1704/A / 1705/A 85A 87A 88A 89A High Conductance Low Leakage Diode

bd 825 10

Abstract: SIEMENS BD 827-10 D1305 ti 829 IC 8256 bd 827-10 d1310 Q62702-D1305 BD829 D1113
Contextual Info: sie j> ö?3Sbci5 oomflib bbfi m s i E G m SIEMENS AKTIEN6ESELLSCHAF SIEM EN S BD 825 . BD 829 NPN Silicon AF Transistors • • • • High current gain High collector current Low collector-emitter saturation voltage Complementary types: BD 826, BD 828,

Contextual Info: SEMICONDUCTOR tm MMBD1401 /1403 /1404 /1405 MMBD1401 M M BD 1403 MARKING 29 M M BD 1404 32 M M BD 1405 High Voltage General Purpose Diode Sourced from Process 1H. Absolute Maximum RatitlQS TA = 25°C unless otherwise noted Parameter Symbol Value Units W|V

B 1403 N

Contextual Info: M lC O N D U C T O R tm MMBD1401 /1403 /1404 /1405 MARKING SOT-23 MMBD1401 M M BD 1403 29 32 M M BD 1404 M M BD 1405 33 34 High Voltage General Purpose Diode Sourced from Process 1H. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Parameter Symbol

Contextual Info: MOTO!ROILA Order this document BY MMBD110T1/D SEMICONDUCTOR TECHNICAL DATA M M BD 110T1 M M BD 330T1 M M BD 770T1 Schottky Barrier Diodes Schottky barrier diodes are designed primarily for high-efficiency UHF and VHF detector applications. Readily available to many other fast switching RF

transistor bd 126

Abstract: TRANSISTOR BD 139 transistor BD 135 BD139 TRANSISTOR BC 137 TRANSISTOR BD 137 BD 139 N bD 106 transistor TRANSISTOR BC 136 transistor bd 711
Contextual Info: TELEFUNKEN ELECTRONIC IN electronic 1?E D • Ô^SQO^b O D Q TB 'îS BD 135 • BD 137 • BD 139 Creativeledinotoe*^ T -^ -O S * Silicon NPN Epitaxial Planar Power Transistors Applications: General in AF-range Features: • Power dissipation 8 W • Matched pairs available

4148SE

Abstract: BD4148 MBD4148 4148CA 4148C BD120 marking 5c diode "MARKING 5H"
Contextual Info: M ICDNDUCTOR ! MMBD4148/SE/CC/CA JH CONNECTION 4 1 ^ S O T -23 M M BD 4148 M M B D 4148C C [IT 3 • 4148SE \ * * * * * *2J 5H H] DIAGRAMS j 1 2 NC 3 I 4148C C MARKING 5H M M BD 4148C A D6 D5 M M BD 4148SE D4 1 2 3 I 4148C A High Conductance Ultra Fast Diode

PG15FBUSC

Contextual Info: SEMICONDUCTOR PG15FBUSC MARKING SPECIFICATION USC PACKAGE 1. Marking method Laser Marking 2. Marking CATHODE MARK 2 BD 1 0 1 2 1 No. Item Marking Description Device Mark BD PG15FBUSC hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character]

KRX204E

Contextual Info: SEMICONDUCTOR KRX204E MARKING SPECIFICATION TES6 PACKAGE 1. Marking method Laser Marking BD 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark BD KRX204E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.

KRX204U

Contextual Info: SEMICONDUCTOR KRX204U MARKING SPECIFICATION US6 PACKAGE 1. Marking method Laser Marking BD 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark BD KRX204U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.

800TD

Abstract: FPT-48P-M19 FPT-48P-M20
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20871-3E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29SL800TD/BD-10/12 • DESCRIPTION The MBM29SL800TD/BD are a 8 M-bit, 1.8 V-only Flash memory organized as 1 Mbytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29SL800TD/BD are offered in a 48-pin TSOP (I) , and 48-ball FBGA packages.

FPT-48P-M19

Abstract: FPT-48P-M20 2 PIN DIODE MARKED BD BD75
Contextual Info: MBM29PL160TD/BD-75/90 Data Sheet Retired Product MBM29PL160TD/BD -75/90 Cover Sheet This product has been retired and is not recommended for new designs. Availability of this document is retained for reference and historical purposes only. Continuity of Specifications

FPT-48P-M19

Abstract: FPT-48P-M20 12PW 38
Contextual Info: MBM29SL800TD/BD-10/12 Data Sheet Retired Product MBM29SL800TD/BD -10/12 Cover Sheet This product has been retired and is not recommended for new designs. Availability of this document is retained for reference and historical purposes only. Continuity of Specifications

1820-1940

Abstract: MBM29DL161BD-90PFTN MBM29DL163TD-90PFTN BGA-48P-M13 FPT-48P-M19 FPT-48P-M20 mbm29dl16xtd
Contextual Info: MBM29DL16XTD/BD-70/90 Data Sheet Retired Product MBM29DL16XTD/BD -70/90 Cover Sheet This product has been retired and is not recommended for new designs. Availability of this document is retained for reference and historical purposes only. Continuity of Specifications

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20871-4E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29SL800TD/BD-10/12 • DESCRIPTION The MBM29SL800TD/BD are a 8 M-bit, 1.8 V-only Flash memory organized as 1 Mbytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29SL800TD/BD are offered in a 48-pin TSOP (I) , 48-ball FBGA and 48-ball

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20871-5E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29SL800TD/BD-10/12 • DESCRIPTION The MBM29SL800TD/BD are a 8 M-bit, 1.8 V-only Flash memory organized as 1 Mbytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29SL800TD/BD are offered in a 48-pin TSOP (I) , 48-ball FBGA and 48-ball

FPT-48P-M19

Abstract: FPT-48P-M20
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20872-3E PAGE MODE FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29PL160TD/BD-75/90 • DESCRIPTION The MBM29PL160TD/BD is a 16 M-bit, 3.0 V-only Flash memory organized as 2 M bytes of 8 bits each or 1M words of 16 bits each. The MBM29PL160TD/BD is offered in a 48-pin TSOP (1), and 44-pin SOP packages. The

transistors BC 543

Abstract: BD 104 NPN BC827 BD 104 transistors d 826 bc 734 82s83 BC 828 BD 541 bc825
Contextual Info: SIE P SIEMENS • ÖZBSbGS 0041021 TS5 « S I E G SIEMENS AKTIENGESELLSCHAF - F s s - n PNP Silicon AF Transistors • • • • BD 826 . BD 830 High current gain High collector current Low collector-emitter saturation voltage Complementary types: BC 825, BC 827,

Contextual Info: WRP SERIES POWER TYPE SILICON COATED WIRE WOUND RESISTORS FLAME PROOF Marking: BD DIMENSION mm (inch) Body Lead Wire Tolerance Style BL ± 1 BD ±0.5 LL±1 (% ) L D ± 0 .0 5 Resistance Range 1 11 ( 433) 4.5 (.177) 3 0 (1 .1 8 1 ) 0 .8 (0 3 1 ) 0 .0 5 0 « 5 0 0

TRANSISTOR BC 136

Abstract: transistor BD 140 transistor bd 126 BD 140 transistor 16BD136 transistor bc 138 TRANSISTOR 138 TRANSISTOR BD 136 BD 139 transistor transistor bd 711
Contextual Info: TELEFUNKEN ELECTRONIC m ilFW K lIM electronic 17E D • fl^HDD'ib DQ’O TBR^ IALCÛ BD 136 BD 138 Ibd 140 Ci*tirtTtehnotoûte» T-33-17 Silicon PNP Epitaxial Planar Power Transistors Applications: General in AF-range Features: • Power dissipation 8 W • Matched pairs available

resistance 47k ohm

Contextual Info: FIXED CARBON FILM RESISTORS KAMAYA OHM RD ¥Features 1. Three sizes are available : 1/6W ~ 1/2W. 2. Structure suitable for auto-insertion processing. 3. Stability Class : 5% ¥Dimensions Bd L H BD H Style RD1/6 RD1/4S RD1/4 RD1/2S Unit : mm L D H d *Unit weight/pc.

Fixed Carbon Film Resistors

Contextual Info: FIXED CARBON FILM RESISTORS KAMAYA OHM RD •Features 1. Three sizes are available : 1/6W ~ 1/2W. 2. Structure suitable for auto-insertion processing. 3. Stability Class : 5% •Dimensions Bd L H BD H Unit : mm Style RD1/6 RD1/4S RD1/4 RD1/2S L D H d *Unit weight/pc.

Contextual Info: FIXED CARBON FILM RESISTORS KAMAYA OHM RD ¥Features 1. Three sizes are available : 1/6W ~ 1/2W. 2. Structure suitable for auto-insertion processing. 3. Stability Class : 5% ¥Dimensions Bd L H BD H Style RD1/6 RD1/4S RD1/4 RD1/2S Unit : mm L D H d *Unit weight/pc.

Contextual Info: FIXED CARBON FILM RESISTORS KAMAYA OHM RD •1. Features Three sizes are available : 1/6W ~ 1/2W. 2. Structure suitable for auto-insertion processing. 3. Stability Class : 5% •Dimensions Bd L H BD H Style RD1/6 RD1/4S RD1/4 RD1/2S Unit : mm L D H d *Unit weight/pc.