BD135 INPUT IMPEDANCE Search Results

bd135 equivalent

Abstract: TP3069 motorola rf device NF 935 bd135 input impedance transistor tp3069
Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line RF Pow er Transistor The TP3069 is designed for cellular radio base station amplifiers up to 960 MHz. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. The TP3069 also features

bd135 equivalent

Abstract: irt 840 1509-50 TP3062 J890 bd135 N rBE BD135 BD135 35 W 960 MHz RF POWER TRANSISTOR NPN BD135 TRANSISTOR
Contextual Info: MOTOROLA SC XSTRS/R F b=)E D b3b7254 D1GDT0G 172 noT b MOTOROLA I SEMICONDUCTOR • ■ TECHNICAL DATA The RF Line U H F P o w er Tkransistor The TP3062 is designed for 960 MHz mobile base stations in both analog and digital applications. It incorporates high value emitter ballast resistors, gold

bd135 equivalent

Abstract: bd135 input impedance rBE BD135 resistor 2,2
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line TP3062 UHF Power Thransistor The TP3062 is designed for 960 MHz mobile base stations in both analog and digital applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. Including

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6414 NPN Silicon RF Power Transistor The MRF6414 is designed for 26 volt UHF large signal, common emitter, class AB linear amplifier applications. • Specified 26 Volt, 960 MHz Characteristics Output Power = 50 Watts

40 pin J004

Abstract: transistor bd135
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor The MRF6402 is designed for 1.8 GHz Personal Communications Network PCN base stations applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and

equivalent transistor K 2767

Abstract: transistor K 2767 bd135 equivalent transistor bd135
Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA TP3019S The RF Line UHF Power Transistor The TP3019S is designed for 24 V common emitter base station amplifiers. Operating in the 820-960 MHz bandwidth, the device has been specifically designed for use in analog and digital GSM systems.

si diode 1N4007

Abstract: MRF841 MOTOROLA TRANSISTOR 935 150 watts power amplifier layout
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6414 NPN Silicon RF Power Transistor The MRF6414 is designed for 26 volt UHF large signal, common emitter, class AB linear amplifier applications. • • • • 50 W, 960 MHz RF POWER TRANSISTOR NPN SILICON

150 j47

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6414 NPN Silicon RF Pow er Transistor The MRF6414 is designed for 26 volt UHF large signal, common emitter, class AB linear amplifier applications. • Specified 26 Volt, 960 MHz Characteristics Output Power = 50 Watts

transistor bd135

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP3032 The RF Line NPN Silicon RF Power TVansistor The TP3032 is designed for 26 volts, common emitter, 960 MHz base station amplifiers, for use in analog and digital systems. • 21 W, 960 MHz RF POWER TRANSISTOR NPN SILICON

si diode 1N4007

Abstract: motorola rf device MOTOROLA TRANSISTOR 935 bd135 equivalent Diode 1N4007 TP3064
Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line RF Power Transistor The TP3064 is designed for 960 MHz mobile base stations in both analog and digital applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. The

MRF6402

Abstract: transistor SMD J9 transistor J9 TRANSISTOR Bd135 diode 1n4148
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF6402 The RF Line NPN Silicon RF Power Transistor The MRF6402 is designed for 1.8 GHz Personal Communications Network PCN base stations applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and

1206 transistor

Abstract: chip resistor 1206 smd transistor p1 bd135 equivalent RF NPN POWER TRANSISTOR 3 GHZ 200 watts 22 pf trimmer capacitor transistor bd135 8 PIN SMD IC 2671 Equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power TVansistor The MRF6406 is designed for 1.88 GHz Personal Communications Network PCN base station applications. For ease of design, this transistor has an internally matched input. •

43 JO smd

Abstract: 1c smd transistor transistor bd135 chip PCN resistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF6402 The M RF6402 is designed for 1.8 GHz Personal Communications Network PCN base stations applications. It incorporates high value emitter ballast resistors, gold m etallizations and offers a high degree of reliability and

bd135 equivalent

Abstract: transistor bd135 motorola 1N4148 microstrip resistor microstrip line
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Power Transistor The TP3021 is designed for 24 V com mon em itter base station amplifiers. Operating in the 8 2 0 -9 6 0 MHz bandwidth, it has been specifically designed for use in analog and digital GSM system s as a medium power output device.

transistor bd135

Abstract: TRANSISTOR 4148 Diode 1N 4148 transistor J9
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor The MRF6402 is designed for 1.8 GHz Personal Com m unications Network PCN base stations applications. It incorporates high value em itter ballast re s is to rs , gold m e ta lliz a tio n s and o ffe rs a high de g re e of re lia b ility and

TP5040

Abstract: ATC100A4R7DP50 100A120D ATC100A470JP50 ATC100A101 ATC100A470
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP5040 The RF Line UH F P o w e r T ra n sisto r 40 W — 380 to 512 M Hz UHF POWER TRANSISTOR NPN SILICON . . . designed for 24 Volt UHF large-signal common emitter am plifier applications in industrial and commercial FM equipment operating in the 380 to 512 MHz frequency

cito RF

Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA TP3040 The RF Line UHF Power Transistor 40 W — 960 MHz UHF POWER TRANSISTOR NPN SILICON T h e T P 3040 is s p e c ific a lly d e s ig n e d fo r o p e ra tio n as th e fin a l s ta g e in 960 M H z m o b ile ba s e s ta tio n a m p lifie r s . U tiliz a tio n o f e m itte r b a lla s t r e s is to rs a n d g o ld m e ta lliz a tio n

Philips Application Note ECO6907

Abstract: AN98032 BD135 CURVES ECO7703 BD136 SMD TRANSISTOR COE82101 bd136 equivalent mosfet HF amplifier AN98030 HF power amplifier blf177
Contextual Info: Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 3 Power amplifier design POWER AMPLIFIER DESIGN NOTE TO SECTION 3 3.1 Classes of operation and biasing 3.1.1 For clarity in equations, identifiers such as R1, +jB2, −jX3 in drawings are written as

CHIP DIODE m7

Abstract: D2-1N4148 variable capacitor 0.4 motorola 1N4148 1N4148 TP3012 motorola rf Power Transistor 21180 chip trimmer capacitor 1.7 capacitor 10 nf
Contextual Info: MOTOROLA SC XSTRS/R F 4bE b3b7254 » 0 Q1 S 2Ü 1 fi I MOTb "P 3 3 -Û 7 ' MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP3012 The RF Line U H F P o w e r T ra n s is to r T he TP3012 is d e sig n e d fo r 900 M H z m o b ile s ta tio n s in both a n a lo g a n d d ig ita l a p p li­

Motorola transistor 9410

Abstract: 91 c6 bd135 equivalent icer capacitor motorola 1N4148 TP3032 1N4148 BD135 NT 407 F TRANSISTOR
Contextual Info: MOTOROLA Order this document by TP3032/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor TP3032 The TP3032 is designed for 26 volts, common emitter, 960 MHz base station amplifiers, for use in analog and digital systems. • Specified 26 Volts, 960 MHz Characteristics

transistor BD135

Abstract: bd135 equivalent motorola rf Power Transistor 1N4148 BD135 TP3021 transistor c1
Contextual Info: M O TOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line U H F Pow er Transistor The TP3021 is designed for 24 V common emitter base station amplifiers. Operating in the 8 2 0 -9 6 0 M H z bandwidth, it has been specifically designed for use in analog and digital G SM system s a s a medium power output device.

transistor rf m 1104

Abstract: MOTOROLA TRANSISTOR 935
Contextual Info: MOTOROLA Order this document by MRF6414/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6414 NPN Silicon RF Power Transistor The MRF6414 is designed for 26 volt UHF large signal, common emitter, class AB linear amplifier applications. • Specified 26 Volt, 960 MHz Characteristics

transistor fn 155

Abstract: motorola rf device transistors equivalent 0912
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line MRF15060 MRF15060S RF Power Bipolar Transistors Designed for broadband commercial and industrial applications at frequen­ cies from 1400 to 1600 MHz. The high gain and broadband performance of

SU 179 transistor

Abstract: transistors equivalent 0912 bd135 equivalent IrL 1540 N 1000 watts class d amplifier schematic bd136 equivalent IrL 1540 g RF NPN POWER TRANSISTOR 3 GHZ 200 watts
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line M RF15060 M RF15060S RF Pow er Bipolar Transistors Designed for broadband commercial and industrial applications at frequen­ cies from 1400 to 1600 MHz. The high gain and broadband performance of