BD238 Search Results

BD235 PHILIPS

Abstract: bd234c BD234 Philips
Contextual Info: BD234; BD236; BD238 PHILIPS INTERNATIONAL 5bE D • 711002b 0D42öb2 ATI ■ P H I N SILICON EPITAXIAL-BASE P O W E R TRANSISTORS P-N-P tra n sis to rs in a SOT-32 plastic envelope intended for use in television and audio am plifier c irc u its where high peak pow ers can occur. N-P-N complements a re BD233,

Contextual Info: BD234/236/238 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • Complement to BD 233/235/237 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Collector Base Voltage Symbol BD234 Rating VcBO BD236 BD238 Collector Emitter Voltage

Contextual Info: BD237 NPN , BD238 (PNP) Preferred Devices Plastic Medium Power Silicon NPN Transistor Designed for use in 5.0 to 10 W audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain − • • http://onsemi.com hFE = 40 (Min) @ IC = 0.15 Adc

Contextual Info: , Dnc, TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BD238 Low voltage PNP power transistor Features • Low saturation voltage • PNP transistor Applications • Audio, power linear and switching applications

bd238 equivalent

Abstract: BD238 BD236 BD234
Contextual Info: Inchange Semiconductor Product Specification BD234 BD236 BD238 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type BD233/235 /237 APPLICATIONS ・For medium power linear and switching applications PINNING PIN DESCRIPTION

BD237

Abstract: Audio amplifier circuits bd238 BD233 BD234 BD235 BD236
Contextual Info: BD233 BD235 BD237 SILICON EPITAXIAL-BASE POWER TRANSISTORS N-P-N transistors in a SOT-32 plastic envelope intended fo r use in television and audio am plifier circuits where high peak powers can occur. P-N-P complements are BD234, BD236 and BD238. Matched pairs

transistor sc 236

Abstract: transistor sc 238
Contextual Info: MOTOROLA SC -CXSTRS/R 6367254 F> MOTOROLA "Tb SC CXSTRS/R DE I L.3L.7ES4 96D F 80575 D BD234 BD236 BD238 MOTOROLA SEM ICO N D U CTO R TECHNICAL DATA 2 AM PERE POWER TRANSISTOR PLASTIC M ED IU M POWER SILICON PNP TRANSISTOR PNP SILICON . . . designed for use in 5 to 10 Watt audio amplifiers and drivers

Contextual Info: BD234/236/238 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS TO -126 • Complement to BD233/235/237 respectively ABSOLUTE MAXIMUM RATINGS Characteristic BD234 BD236 BD238 Collector Emitter Voltage BD234 BD236 BD238 Collector Emitter Voltage BD234

BD238

Contextual Info: BD238 Medium Power Transistors Features: • Epitaxial Silicon Power Transistors. • Intended for Use in Medium Power Linear Switching Applications. TO-126 Plastic Package Dimensions Minimum Maximum A 7.4 7.8 B 10.5 10.8 C 2.4 2.7 D 0.7 0.9 E F 2.25 Typical

Circuit details of BD237 equivalent

Abstract: bd237 equivalent NPN pnp MATCHED PAIRS to126 case BD234 BD233 BD235 BD236 BD237 BD238
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.3 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer EPITAXIAL SILICON POWER TRANSISTORS EC BD233 BD235 BD237 NPN BD234 BD236 BD238 PNP TO126 Plastic Package B Intended for use in Medium Power Linear Switching Applications

transistor sc 238

Abstract: T-33-H transistor motorola 236 transistor sc 236 B023S BD234 BD236 BD238
Contextual Info: MOTOROLA SC -CXSTRS/R 6367254 F> "Tb MOTOROLA SC b 3ti7SS4 0000575 96D 8 0 5 7 5 XSTRS/_R.F D BD234 BD236 BD238 MOTOROLA SEM IC O N D U C T O R TECHNICAL DATA 2 AM PERE POWER TRANSISTOR PLASTIC MEDIUM POWER SILICON PNP TRANSISTOR PNP SILICON . . . d esigned for use in 5 to 1 0 W att audio amplifiers and drivers

D237B

Contextual Info: rz 7 SGS-THOMSON BD235/BD236 BD237/BD238 Ä T # [MO gfô l[L[iera®*S COMPLEMENTARY SILICON POWER TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD235 and BD237 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package inteded for use in medium power linear

BD236

Abstract: BD237 BD238
Contextual Info: ON Semiconductort NPN BD237 Plastic Medium Power Silicon NPN Transistor PNP BD238 *ON Semiconductor Preferred Device . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits. 2.0 AMPERES

bd238

Abstract: BD236 BD234 bd238 equivalent
Contextual Info: SavantIC Semiconductor Product Specification BD234 BD236 BD238 Silicon PNP Power Transistors DESCRIPTION •With TO-126 package ·Complement to type BD233/235 /237 APPLICATIONS ·For medium power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company EPITAXIAL SILICON POWER TRANSISTORS EC BD233 BD235 BD237 NPN BD234 BD236 BD238 PNP TO126 Plastic Package B Intended for use in Medium Power Linear Switching Applications

BD237

Contextual Info: BD237 NPN , BD234 (PNP), BD238 (PNP) Plastic Medium Power Bipolar Transistors Designed for use in 5.0 to 10 W audio amplifiers and drivers utilizing complementary or quasi complementary circuits. Features • High DC Current Gain • Epoxy Meets UL 94 V0 @ 0.125 in

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BD238 PNP EPITAXIAL SILICON TRANSISTOR -80V, PNP TRANSISTOR  DESCRIPTION The UTC BD238 is a PNP epitaxial planar transistor, it uses UTC’s advanced technology to provide the customers with high DC current gain and high collector-emitter breakdown voltage, etc.

BD238

Abstract: bd237 equivalent bd238 equivalent 0016114E BD237 Transistor B C 458
Contextual Info: BD238 Low voltage PNP power transistor Features • Low saturation voltage ■ PNP transistor Applications ■ Audio, power linear and switching applications 3 1 SOT-32 TO-126 Description The device is manufactured in planar technology with “Base Island” layout. The resulting transistor

BD237G

Abstract: BD234 BD234G BD236 BD237 BD238 BD238G
Contextual Info: BD237 NPN , BD234 (PNP), BD238 (PNP) Preferred Devices Plastic Medium Power Bipolar Transistors Designed for use in 5.0 to 10 W audio amplifiers and drivers utilizing complementary or quasi complementary circuits. Features 2.0 AMPERES POWER TRANSISTORS 25 WATTS

Contextual Info: BD233, BD235, BD237 BD234, BD236, BD238 BD233, 235, 237 BD234, 236, 238 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Medium Power Liner and Switching Applications PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE DIM MIN. MAX. A 7.4 7.8 B 10.5

Contextual Info: BD237 NPN , BD238 (PNP) Preferred Devices Plastic Medium Power Silicon NPN Transistor Designed for use in 5.0 to 10 W audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain − • • http://onsemi.com hFE = 40 (Min) @ IC = 0.15 Adc

Contextual Info: BD234/236/238 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD 233/235/237 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic C ollector Base Voltage Sym bol BD234 Rating V cbO BD236 BD238 C ollecto r E m itter Voltage

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BD238 PNP EPITAXIAL SILICON TRANSISTOR -80V, PNP TRANSISTOR  DESCRIPTION The UTC BD238 is a PNP epitaxial planar transistor, it uses UTC’s advanced technology to provide the customers with high DC current gain and high collector-emitter breakdown voltage, etc.

BD236

Abstract: BD237 BD238 BD238D transistor bd238
Contextual Info: ON Semiconductor NPN BD237 Plastic Medium Power Silicon NPN Transistor PNP BD238 *ON Semiconductor Preferred Device . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits. 2.0 AMPERES