BD239C Search Results

BD239

Abstract: BD239A BD239B BD239C BD240
Contextual Info: BD239, BD239A, BD239B, BD239C NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD240 Series ● 30 W at 25°C Case Temperature ● 2 A Continuous Collector Current B 1 ● 4 A Peak Collector Current C 2 ● Customer-Specified Selections Available

Contextual Info: BD239/A/B/C NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD 240/A/B/C respectively ABSOLUTE MAXIMUM RATINGS Characteristic Sym bol Rating Unit 45 V : BD239A 60 V : BD239B 80 V : BD239C 100 V C ollector-E m itter Voltage : BD239

transistor BD 246

Abstract: transistor BD 240 B0239 mj 3055 npn BD239 TEXAS INSTRUMENTS BDX 625 transistor mj 3055 transistor bd 242 operation of BD 139 transistor bd 138
Contextual Info: BD239, BD239A, BD239B, BD239C FOR POWER AM PLIFIER AN D HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH BD240A-C 30 W at 25 °C Case Temperature 2 A Rated Collector Current M in f T o f 3 MHz at 10 V , 200 mA mechanical data absolute maximum ratings at 25 °C case temperature unless otherwise noted

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company BD239, BD239A, BD239B, BD239C BD240, BD240A, BD240B, BD240C TO-220 Plastic Package BD239, 239A, 239B, 239C NPN PLASTIC POWER TRANSISTORS BD240, 240A, 240B, 240C PNP PLASTIC POWER TRANSISTORS

BD239

Abstract: BD239A
Contextual Info: BD239, BD239A, BD239B, BD239C NPN SILICON POWER TRANSISTORS Copyright 1997, Power Innovations Limited, UK • JUNE 1973 - REVISED MARCH 1997 Designed for Complementary Use with the BD240 Series T0-220 PACKAGE TOP VIEW • 30 W at 25°C Case Temperature

BD239C

Contextual Info: BD239C NPN SILICON POWER TRANSISTOR • STMicroelectronics PREFERRED SALESTYPE DESCRIPTION The BD239C is a silicon epitaxial-base NPN transistor in Jedec TO-220 plastic package. It is inteded for use in medium power linear and switching applications. 3

BD239

Abstract: tp 9054 B0239A b0239c BD239A BD239B BD239C BD240 BD240C IBD239B
Contextual Info: V N AMER PHILIPS/DISCRETE _ 2SE D 1I • . * ^53=131 001^303 5 ■ ^ ! BD239; BD239A J I B D 2 3 9 B ; BD239C T - 3 £ ~ £ > ? SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistors in a plastic envelope intended for use in audio output stages, general amplifier

Contextual Info: 7 ^ 5 3 7 oosaagg b • n " - 3 3 -Q °| SCS-THOMSON •mera «« SJ3 BD239/A/B/C BD240/A/B/C S-THOMSON 3GE I> MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS DESCRIPTION The BD239, BD239A, BD239B and BD239C are si­ licon epitaxial-base NPN power transistors in Jedec

bd239a ti

Contextual Info: 11 N AMER PHILIPS/DISCRETE . bL>53T31 0011363 5 • 2SE D BD239; BD239A BD239B; BD239C SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistors in a plastic envelope intended fo r use in audio output stages, general amplifier and high-speed switching applications.P-N-P complements are BD240; 240A; 240B and BD240C.

d239ab

Abstract: CS696 bd240c D239 D239B d240a D239 PNP
Contextual Info: rZ Z SG S -TH O M SO N B D239/A /B /C B D 240/A /B /C ^7# MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS D E S C R IP T IO N The BD239, BD239A, BD239B and BD239C are si­ licon epitaxial-base NPN power transistors in Jedec TO-220 plastic package, intended for use in medium

BD239C

Abstract: BD239A BD239B BD239
Contextual Info: BD239/A/B/C NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD 240/A/B/C respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Sym bol Rating Unit 45 V : BD239A 60 V : BD239B 80 V : BD239C 100 V C ollector-E m itter Voltage : BD239

Contextual Info: rZ 7 SGS-THOMSON m7M Hß i s [i[Li©iri iO(gi BD239C BD240C COMPLEMENTARY SILICON POWER TRANSISTORS . BD239C IS SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The BD239C is a silicon epitaxial-base NPN transistor mounted in Jedec TO-220 plastic package. It is inteded for use in medium power linear and

BD239B

Abstract: BD239 BD239A BD239C BD240
Contextual Info: BD239, BD239A, BD239B, BD239C NPN SILICON POWER TRANSISTORS Copyright 1997, Power Innovations Limited, UK ● JUNE 1973 - REVISED MARCH 1997 Designed for Complementary Use with the BD240 Series TO-220 PACKAGE TOP VIEW ● 30 W at 25°C Case Temperature

BD239C

Abstract: BD240C
Contextual Info: BD239C BD240C COMPLEMENTARY SILICON POWER TRANSISTORS • BD239C IS SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The BD239C is a silicon epitaxial-base NPN transistor mounted in Jedec TO-220 plastic package. It is inteded for use in medium power linear and

Contextual Info: m BD239, BD239A, BD239B, BD239C BD240, BD240A, BD240B, BD240C BD239,239A, 239B, 239C BD240,240A, 240B, 240C NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS General Purpose Amplifier and Switching Applications DIM A 8 C D E F G H J K L M N MIN MAX

239a

Abstract: 240b b0239c BD239 BD239A BD239B BD239C BD240 BD240A BD240B
Contextual Info: |j^ BD239, BD239A, BD239B, BD239C BD240, BD240A, BD240B, BD240C BD239,239A, 239B, 239C BD240,240A, 240B, 240C NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS General Purpose Amplifier and Switching Applications DIM A 8 C D E F G H J K L M N MIN

80239c

Abstract: B0239A BD239 BD239A BD239B BD239C
Contextual Info: E SOLID STATE 3875081 DIE D G E SOLID STATE J ü V h U ö ii 0T É 1752 U U ij S b d b 5-D u P ro E le c tro n P o w e r ira n s is io rs ' BD239, BD239A, BD239B, BD239C E L E C T R I C A L C H A R A C T E R I S T IC S at Case Temperature T q = 2 5 ° C

bd239

Abstract: bd239c
Contextual Info: BD239/A/B/C NPN EPITAXIAL SILICON TRANSISTOR n MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS TO-220 • Complement to BD240/A/B/C respectively ABSOLUTE MAXIMUM RATINGS Characteristic C ollecto r E m itter Voltage BD239 BD239A BD239B BD239C C o lle cto r E m itter Voltage BD239

Contextual Info: BD239C NPN power transistor Features • NPN transistor Applications ■ General purpose switching and amplifier transistor Description 1 The device is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance

BD240C

Abstract: BD239 BD239A BD239B BD239C BD240 BD240A BD240B
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-220 Plastic Package BD239, BD239A, BD239B, BD239C BD240, BD240A, BD240B, BD240C BD239, 239A, 239B, 239C NPN PLASTIC POWER TRANSISTORS

Contextual Info: n BD239, BD239A, BD239B, BD239C BD240, BD240A, BD240B, BD240C BD239,239A, 239B, 239C BD240,240A, 240B, 240C NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS General Purpose Amplifier and Switching Applications DIM A B C D E F G H J K L M N MIN MAX

BD239

Contextual Info: BD239/A/B/C NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • Complement to BD240/A/B/C respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Symbol Collector-Emitter Voltage : BD239 Rating U nii 45 V 60 V : BD239B 80 V : BD239C

BD240C

Abstract: BD239C bd240c Transistor
Contextual Info: BD239C BD240C COMPLEMENTARY SILICON POWER TRANSISTORS • BD239C IS ST PREFERRED SALESTYPE DESCRIPTION The BD239C is a silicon epitaxial-base NPN transistor mounted in Jedec TO-220 plastic package. It is inteded for use in medium power linear and switching applications.

BD239

Abstract: BD239A BD239B BD239C BD240 free transistor BD239A BD239A TO 220
Contextual Info: BD239, BD239A, BD239B, BD239C NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD240 Series ● 30 W at 25°C Case Temperature ● 2 A Continuous Collector Current B 1 ● 4 A Peak Collector Current C 2 ● Customer-Specified Selections Available