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    BD645 TRANSISTOR Search Results

    BD645 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    BD645 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BD648

    Abstract: BD650 BD646 BD652
    Text: SavantIC Semiconductor Product Specification BD646/648/650/652 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·Complement to type BD645/647/649/651 ·DARLINGTON APPLICATIONS ·For use in output stages in audio equipment ,general amplifier,and


    Original     		PDF BD646/648/650/652 O-220C BD645/647/649/651 BD646 BD648 BD650 BD652 BD648 BD650 BD646 BD652

    BD649

    Abstract: BD647 BD645 BD651 IC 651 PC 649
    Text: SavantIC Semiconductor Product Specification BD645/647/649/651 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Complement to type BD646/648/650/652 ·DARLINGTON APPLICATIONS ·For use in output stages in audio equipment ,general amplifier,and


    Original     		PDF BD645/647/649/651 O-220C BD646/648/650/652 BD645 BD647 BD649 BD651 BD649 BD647 BD645 BD651 IC 651 PC 649

    BD648

    Abstract: BD650 BD646 BD645 BD647 BD649 BD651 BD652 transistor bd650
    Text: BD646, BD648, BD650, BD652 PNP SILICON POWER DARLINGTONS Copyright 1997, Power Innovations Limited, UK ● MAY 1993 - REVISED MARCH 1997 Designed for Complementary Use with BD645, BD647, BD649 and BD651 TO-220 PACKAGE TOP VIEW ● 62.5 W at 25°C Case Temperature


    Original     		PDF BD646, BD648, BD650, BD652 BD645, BD647, BD649 BD651 O-220 BD646 BD648 BD650 BD646 BD645 BD647 BD651 BD652 transistor bd650

    BD647

    Abstract: BD651 BD649 BD649 equivalent BD645 BD646 BD648 BD650 BD652
    Text: BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS Copyright 1997, Power Innovations Limited, UK ● MAY 1993 - REVISED MARCH 1997 Designed for Complementary Use with BD646, BD648, BD650 and BD652 TO-220 PACKAGE TOP VIEW ● 62.5 W at 25°C Case Temperature


    Original     		PDF BD645, BD647, BD649, BD651 BD646, BD648, BD650 BD652 O-220 BD645 BD647 BD651 BD649 BD649 equivalent BD645 BD646 BD648 BD652

    BD649

    Abstract: BD645 BD651 BD647 BD649 equivalent bd650 bd649 Bd645 equivalent BD650 BD646 BD648
    Text: BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD646, BD648, BD650 and BD652 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A TO-220 PACKAGE TOP VIEW


    Original     		PDF BD645, BD647, BD649, BD651 BD646, BD648, BD650 BD652 O-220 BD645 BD649 BD645 BD651 BD647 BD649 equivalent bd650 bd649 Bd645 equivalent BD646 BD648

    bd648

    Abstract: bd652
    Text: BD646, BD648, BD650, BD652 PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD645, BD647, BD649 and BD651 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A TO-220 PACKAGE TOP VIEW


    Original     		PDF BD646, BD648, BD650, BD652 BD645, BD647, BD649 BD651 O-220 BD646 bd648 bd652

    BD646

    Abstract: No abstract text available
    Text: BD646, BD648, BD650, BD652 PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD645, BD647, BD649 and BD651 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A This series is obsolete and


    Original     		PDF BD646, BD648, BD650, BD652 BD645, BD647, BD649 BD651 O-220 BD646 BD646

    transistor bd647

    Abstract: BD647 BD649 bd645 transistor BD645 BD651 bd648 BD646 BD650 BD652
    Text: BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD646, BD648, BD650 and BD652 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A TO-220 PACKAGE TOP VIEW


    Original     		PDF BD645, BD647, BD649, BD651 BD646, BD648, BD650 BD652 O-220 BD645 transistor bd647 BD647 BD649 bd645 transistor BD645 BD651 bd648 BD646 BD652

    transistor bd650

    Abstract: BD650 transistor bd648 BD648 BD646 BD645 BD647 BD649 BD651 BD652
    Text: BD646, BD648, BD650, BD652 PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD645, BD647, BD649 and BD651 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A TO-220 PACKAGE TOP VIEW


    Original     		PDF BD646, BD648, BD650, BD652 BD645, BD647, BD649 BD651 O-220 BD646 transistor bd650 BD650 transistor bd648 BD648 BD646 BD645 BD647 BD651 BD652

    BD648

    Abstract: BD646 transistor bd650 bd650 bd649 BD65 BD645 BD647 BD649 BD650 BD651
    Text: BD646, BD648, BD650, BD652 PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD645, BD647, BD649 and BD651 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A TO-220 PACKAGE TOP VIEW


    Original     		PDF BD646, BD648, BD650, BD652 BD645, BD647, BD649 BD651 O-220 BD646 BD648 BD646 transistor bd650 bd650 bd649 BD65 BD645 BD647 BD650 BD651

    Untitled

    Abstract: No abstract text available
    Text: BD645/646 Transistors Complementary Monolithic Transistor Pair Military/High-RelN Number of Devices2 Type NPN/PNP V(BR)CEO (V) V(BR)CBO (V) I(C) Max. (A)12.0 P(D) Max. (W)62 Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition)


    Original     		PDF BD645/646

    Untitled

    Abstract: No abstract text available
    Text: BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS RoHS compliant* Designed for Complementary Use with BD646, BD648, BD650 and BD652 62.5 W at 25°C Case Temperature TO-220 PACKAGE TOP VIEW 8 A Continuous Collector Current B 1 C 2 Minimum hFE of 750 at 3V, 3 A


    Original     		PDF BD645, BD647, BD649, BD651 BD646, BD648, BD650 BD652 O-220 BD645

    Untitled

    Abstract: No abstract text available
    Text: BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS RoHS compliant* Designed for Complementary Use with BD646, BD648, BD650 and BD652 62.5 W at 25°C Case Temperature TO-220 PACKAGE TOP VIEW 8 A Continuous Collector Current B 1 C 2 Minimum hFE of 750 at 3V, 3 A


    Original     		PDF BD645, BD647, BD649, BD651 BD646, BD648, BD650 BD652 O-220 BD645

    Untitled

    Abstract: No abstract text available
    Text: BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS RoHS compliant* Designed for Complementary Use with BD646, BD648, BD650 and BD652 62.5 W at 25°C Case Temperature TO-220 PACKAGE TOP VIEW 8 A Continuous Collector Current B 1 C 2 Minimum hFE of 750 at 3V, 3 A


    Original     		PDF BD645, BD647, BD649, BD651 BD646, BD648, BD650 BD652 O-220 BD645

    BD651

    Abstract: No abstract text available
    Text: BD643; BD645; BD647; BD649; ^ BD651_ J SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Darlington circuit and housed in a TO-220 envelope. They are intended fo r output stages in audio equipment, general amplifiers, and analogue switching


    OCR Scan     		PDF BD643; BD645; BD647; BD649; BD651_ O-220 BD644, BD646, BD648, BD650 BD651

    b0652

    Abstract: BD648 BD652 bd650
    Text: BD646, BD648, BOSSO, BD652 PNP SILICON POWER DARLINGTONS Copyright C 1997, Power Innovations Limited. UK_ MAY 1993-REVISED MARCH 1997 • Designed for Complementary Use with BD645, BD647, BD649 and BD651 • 62.5 W at 25°C Case Temperature


    OCR Scan     		PDF BD646, BD648, BD652 1993-REVISED BD645, BD647, BD649 BD651 O-220 BDS46 b0652 BD648 bd650

    BD645

    Abstract: BD649 BD647 darlington bd647 D 17275 n69s BD643 B13 transistors
    Text: G DI E SOLI» STATE 3875081 G E SOLID D[f| 3Û7S0Ô1 0017573 L> 0 1 E ~ 17273 STATE ~ _ Darlington Power Transistore File Number 1241 BD643, BD645, BD647, BD649 8-Ampere N-P-N Darlington Power Transistors TERMINAL DESIGNATIONS 45-60-80 Volts, 70 Watts


    OCR Scan     		PDF BD643, BD645, BD647, BD649 O-22QAB RCA-BD643, BD649 1500b BD645 BD647 darlington bd647 D 17275 n69s BD643 B13 transistors

    B0643

    Abstract: d 17275 BD649C
    Text: G DI E SOLI» STATE 3875081 G E SOLID File N um ber D[f| 3Û7S0Ô1 0017573 L> Ò 1É STATE 17273 ~ _ Darlington Power Transistore 1241 BD643, BD645, BD647, BD649 8-Ampere N-P-N Darlington Power Transistors TERMINAL DESIGNATIONS 45-60-80 Volts, 70 Watts


    OCR Scan     		PDF BD643, BD645, BD647, BD649 O-220AB RCA-BD643, BD649 1500b B0643 d 17275 BD649C

    darlington bd647

    Abstract: TL 2262 lg bd645 tic 2260 BD649
    Text: File Num ber 1241 BD643, BD645, BD647, BD649 8-Ampere N-P-N Darlington Power Transistors TERMINAL DESIGNATIONS 45-60-80 Volts, 70 Watts Gain of 750 at 3A O A pplications: t Features: m Power switching Hammer drivers • Operates from IC without predriver Series and shunt


    OCR Scan     		PDF BD643, BD645, BD647, BD649 O-22QAB BD649 220AB darlington bd647 TL 2262 lg bd645 tic 2260

    BD649

    Abstract: BD647 TL 2262 BD64S 00m0
    Text: File Number 1241 BD643, BD645, BD647, BD649 HARRIS SEMTCOND SECTOR SbE ]> 4302271 OOMObflZ £21 8-Ampere N-P-N Darlington Power Transistors TERMINAL DESIGNATIONS 45-60-80 Volts, 70 Watts Gain of 750 at 3A r o Applications: Features: t m Power switching • Operates from 1C without predrlver ■ Hammer drivers


    OCR Scan     		PDF BD643, BD645, BD647, BD649 TQ-220AB BD649 BD647 TL 2262 BD64S 00m0

    B0645

    Abstract: BD85 transistor bd647 b0652 BD651 BD645 transistor bd646 BD649 80651 bd851
    Text: BD643; BD645; BD647; BD649; Ì B D 6 5 1 _ J SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a m onolithic Darlington circu it and housed in a T0-220 envelope. They are intended fo r o u tp u t stages in audio equipment, general amplifiers, and analogue switching


    OCR Scan     		PDF BD643; BD645; BD647; BD649; BD651 T0-220 BD644, BD646, BD648, BD650 B0645 BD85 transistor bd647 b0652 BD651 BD645 transistor bd646 BD649 80651 bd851

    Untitled

    Abstract: No abstract text available
    Text: BD646, BD648, BD650, BD652 PNP SILICON POWER DARLINGTONS C o p y rig h t 1997, Power Innovations Limited, UK • MAY 1993 - REVISED MARCH 1997 Designed for Complementary Use with BD645, BD647, BD649 and BD651 T0-220 PACKAGE TOP VIEW • 62.5 W at 25 C Case Temperature


    OCR Scan     		PDF BD646, BD648, BD650, BD652 BD645, BD647, BD649 BD651 T0-220 BD646

    transistor BD6

    Abstract: bd645 transistor BD643 H 649 A transistor
    Text: J PHILIPS INTERNATIONAL SbE D m BD643; BD645; BD647; BD649; BD651 _ 7110fi2b 0042'i5b 741 I IPHIN -r-j 7 SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a m onolithic Darlington circu it and housed in a T 0-22 0 envelope. They are intended fo r o u tp u t stages in audio equipment, general amplifiers, and analogue switching


    OCR Scan     		PDF BD643; BD645; BD647; BD649; BD651 7110fi2b BD644, BD646, BD648, BD650 transistor BD6 bd645 transistor BD643 H 649 A transistor

    bd649

    Abstract: BD651
    Text: BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS C o p y rig h t 1997, Power Innovations Limited, UK • MAY 1993 - REVISED MARCH 1997 Designed for Complementary Use with BD646, BD648, BD650 and BD652 T0-220 PACKAGE TOP VIEW • 62.5 W at 25 C Case Temperature


    OCR Scan     		PDF BD645, BD647, BD649, BD651 BD646, BD648, BD650 BD652 T0-220 BD645 bd649