BDISCRI01 Search Results

Contextual Info: D b3E 4551Ö72 DDG1Q1D HONEYWELL/ S MULTICHIP MODULES Honeywell TÖ3 • H 0 N 3 S E C Preliminary 64K X 8 RADIATION-TOLERANT SRAM HC80805 FEATURES RADIATION OTHER • Total Dose Hardness through 1x10s rad Si02 • Spare Memory Chip can be Substituted On-The-Fly

32kx8 sram

Abstract: VSS115 32kxS
Contextual Info: Honeywell Advance Information HC80820 256K X 8 RADIATION-TOLERANT SRAM FEATURES R A D IA TIO N OTHER • Total D ose Hardness at Tactical Level • S pare Mem ory Chip can be Substituted O n-The-Fly • Soft Error R ate of <1 x1 O'5 upsets/bit-day or <1 upset/module-day

Contextual Info: fc.3E D 45S1Ô72 GDD 1 G1 1 H ONEYÙI EL L/ S 11T Honeywell *H0N3 S E C Advance Information 256K X 8 RADIATION-TOLERANT SRAM HC80820 FEATURES RADIATION OTHER • Total Dose Hardness at Tactical Level • Spare Memory Chip can be Substituted On-The-Fly • Soft Error Rate of <1x10 5upsets/bit-day

Contextual Info: Honeywell Preliminary MULTICHIP MODULES HC80805 64K X 8 RADIATION-TOLERANT SRAM FEATURES RADIATION OTHER • Total Dose Hardness through 1x106 rad Si02 • Spare Memory Chip can be Substituted On-The-Fly • Neutron Hardness through 1x1014 crrv2 • Access Time <60 nsec