BDX33A Search Results

Contextual Info: BDX33, BDX33A, BDX33B, BDX33C, BDX33D NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDX34, BDX34A, BDX34B, BDX34C and BDX34D ● 70 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A

Box 34C

Abstract: BDX 34C pnp box 34b BDX33 BDX33A BDX33B BDX33C BDX34 BDX34A BDX34B
Contextual Info: BDX33, BDX33A, BDX33B, BDX33C BDX34, BDX34A, BDX34B, BDX34C f l . BDX33, A, B, C BDX34, A, B, C NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Power Darlington for Linear Switching Applications PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER

BDX33

Abstract: BDX34C BDX33A BDX33B BDX33C BDX34 BDX34A BDX34B T-801 k 30 transistor
Contextual Info: E lMOSPEC DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS NPN PNP BDX33 BDX33A BDX33B BDX33C .designed for general-purpose amplifier and low speed switching applications FEATURES: * Coliector-Emitter Sustaining VoltageVcEopus, = 45 V Min - BDX33.BDX34

bdx34

Abstract: BDX34A
Contextual Info: BDX34, BDX34A, BDX34B, BDX34C, BDX34D PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDX33, BDX33A, BDX33B, BDX33C and BDX33D ● 70 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A

Contextual Info: SG S-TH O M SO N lü3D SI^@lliyiiSin^@lDCl BDX33A/33B/33C B DX34A/34 B/34C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . DBX33B, BDX33C, BDX34B AND BDX34C ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BDX33B, BDX33B and BDX33C are silicon epitaxial-base NPN power transistors in

Contextual Info: • TqgqSB? D056M57 5 ■ " T '3 3>-Z.°\ f Z T SGS-THOMSON BDX33/33A/33B/33C ^ 7 # MÛi [i[Li©ir[B ô [MQ©S BDX34/34A/34B/34C 3GE D S G S-THOMSON HIGH GAIN GENERAL PURPOSE DESC RIPTIO N The BDX33, BDX33A, BDX33B and BDX33C are silicon epitaxial-base NPN transistors in monolithic

transistor BDX34 65

Contextual Info: BDX33, BDX33A, BDX33B, BDX33C, BDX33D NPN SILICON POWER DARLINGTONS C o p y rig h t 1997, Power Innovations Limited, UK • AUG UST 1993 - REVISED MARCH 1997 Designed for Complementary Use with BDX34, BDX34A, BDX34B, BDX34C and BDX34D • 70 W at 25°C Case Temperature

BDX34C

Contextual Info: BDX34, BDX34A, BDX34B, BDX34C, BDX34D PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDX33, BDX33A, BDX33B, BDX33C and BDX33D ● 70 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A

BDX330

Abstract: BDX338 8DX33 BOX33B BOX33 TRANSISTOR BDX330 8DX33B B0X33 BOX33D bdx33d on
Contextual Info: B0X33, BDX33A, BDX33B, BDX33C, BDX33D NPN SILICON POWER DARLINGTONS Copyright 1997, Power Innovations United, UK_ • Designed lor Complementary Use with BDX34, BDX34A, BDX34B, BDX34C and BDX34D • 70 W at 25°C Case Temperature

BDX34C

Abstract: BDX34A BDX34 BDX34D BDX33 BDX33A BDX33B BDX33C BDX33D BDX34B
Contextual Info: BDX34, BDX34A, BDX34B, BDX34C, BDX34D PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDX33, BDX33A, BDX33B, BDX33C and BDX33D ● 70 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A

BDX34 equivalent

Abstract: bdx33c BDX33 BDX33B BDX34 BDX34B BDX34C BDX33A BDX34A
Contextual Info: NPN BDX33 – BDX33A – BDX33B – BDX33C PNP BDX34 – BDX34A – BDX34B – BDX34C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS The BDX33B, BDX33B and BDX33C are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in Jedec TO220 plastic package.

Contextual Info: BDX34, BDX34A, BDX34B, BDX34C, BDX34D PNP SILICON POWER DARLINGTONS C o p y rig h t 1997, Power Innovations Limited, UK • AUG UST 1993 - REVISED MARCH 1997 Designed for Complementary Use with BDX33, BDX33A, BDX33B, BDX33C and BDX33D • 70 W at 25°C Case Temperature

BDX33D equivalent

Abstract: BOX33B RCA-BDX33 BDX33c equivalent
Contextual Info: oï G E SOLID STATE 38 75081 G E SOLID-STATE Darlington Power Translators 0 1E ~ d^3ö7S0öi □□vpsflü 3 17280 Ö’ T - 3 3 - 2 L 7 BDX33, BDX33A, BDX33B, BDX33C, BDX33D File Number 693/ r 10-Ampere N-P-N Darlington Power Transistors « TERMINAL DESIGNATIONS

BDX 34C pnp

Abstract: BDX33 BDX33A BDX33B BDX33C BDX34 BDX34A BDX34B BDX34C bdx 33c
Contextual Info: BDX33, BDX33A, BDX33B, BDX33C BDX34, BDX34A, BDX34B, BDX34C BDX33, A, B, C BDX34, A, B, C NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Power Darlington for Linear Switching Applications PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR

Contextual Info: BDX33A Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)10 Absolute Max. Power Diss. (W)70 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0mÌ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.750 h(FE) Max. Current gain.

BD320C

Abstract: BCX21 BD323 TlPl22 2N6383 BD320 BD321 BD322 BDX33 BDX33A
Contextual Info: DARLINGTONS POWER DARLINGTON SELECTOR CHART T0-220 10A BDX TO-39 2A TO-39 A Package •c o w ÜÔ >> NPN TO-3 10A PNP 40 - - - - 2N6383 45 BCX21 - BDX33 BDX34 - 60 BD320 BD321 BDX33A BDX34A BD322 BD323 TIP120 TIP125 - BDX33B BDX34B TIP121 TIP126 BDX33C BDX34C

DBX33B

Abstract: BDX34C BDX33A BDX33B BDX33C BDX34A BDX34B
Contextual Info: BDX33A/33B/33C BDX34A/34B/34C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS n DBX33B, BDX33C, BDX34B AND BDX34C ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BDX33B, BDX33B and BDX33C are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are

BDX33D equivalent

Abstract: B0X33B b0x33c box33 BDX33 BDX33A BDX33B BDX33C BDX33D BDX34
Contextual Info: oï G E SOLID STATE 3875081 G E SOLID-STATE Darlington Power Translators »Ë^Ba7S0ôi □□vpsflG 3 0 1E ~ D 1T 17280 '3 3 “2L7 File Number 6 9 3 / BDX33, BDX33A, BDX33B, BDX33C, BDX33D r 10-Ampere N-P-N Darlington Power Transistors « TERMINAL DESIGNATIONS

BD PNP

Abstract: X33B
Contextual Info: /= T ^7 # S G S -TH O M S O N RftO ragm tEO T *! BD X33/33A/33B/33C BD X34/34A/34B/34C HIGH GAIN GENERAL PURPOSE DESCRIPTIO N The BDX33, BDX33A, BDX33B and BDX33C are silicon epitaxial-base NPN transistors in monolithic Darlington configuration and are mounted in Jedec

box33c

Abstract: box33
Contextual Info: BDX33, BDX33A, BDX33B, BDX33C BDX34, BDX34A, BDX34B, BDX34C BDX33, A, B, C BDX34, A, B, C NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Power Darlington for Linear Switching Applications DIM A B C MIN MAX 1 4 .4 2 9 ,6 3 3 ,5 6 16,51 1 0 .6 7

DBX33B

Abstract: dbx33
Contextual Info: SGS-THOMSON MGMlLIOTIlMCt BDX33A/33B/33C BDX34A/34B/34C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . DBX33B, BDX33C, BDX34B AND BDX34C ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BDX33B, BDX33B and BDX33C are silicon epitaxial-base NPN power transistors in

BDX33D

Abstract: BDX33 BDX33C BDX34 BDX34A BDX34B BDX34C BDX34D BDX33A BDX33B
Contextual Info: BDX33, BDX33A, BDX33B, BDX33C, BDX33D NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDX34, BDX34A, BDX34B, BDX34C and BDX34D ● 70 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A

pnp darlington to-220 10a

Abstract: shockley diode TIP121 transistor BDX33d BD321 BD322 2N6383 BCX21 tip121 BD323
Contextual Info: DARLINGTONS POW ER DARLINGTO N SELEC TO R CH A R T T0-220 10A BDX TO-39 2A TO-39 A Package •c ow ÜÔ >> NPN TO-3 10A PNP 40 - - - - 2N6383 45 BCX21 - BDX33 BDX34 - 60 BD320 BD322 BD321 BD323 BDX33A TIP120 BDX34A TIP125 2N6384 - BDX33B TIP121 BDX34B TIP126

BDX33C

Abstract: bdx33a BDX33
Contextual Info: BDX33, BDX33A, BDX33B, BDX33C, BDX33D NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDX34, BDX34A, BDX34B, BDX34C and BDX34D ● 70 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A