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    BDX34CG Search Results

    BDX34CG Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    BDX34CG
    		On Semiconductor Bipolar Power T0220 PNP 10A 100V; Package: TO-220 3 LEAD STANDARD; No of Pins: 3; Container: Rail; Qty per Container: 50 Original PDF 86.45KB 6
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    BDX34CG Price and Stock

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    FLIP ELECTRONICS BDX34CG

    TRANS PNP DARL 100V 10A TO-220
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    DigiKey BDX34CG Tube 500
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    onsemi BDX34CG

    TRANS PNP DARL 100V 10A TO-220
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    DigiKey BDX34CG Tube
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    Avnet Americas BDX34CG Tube 0 Weeks, 2 Days 642
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    Rochester Electronics BDX34CG 304 1
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    ComSIT USA BDX34CG 10
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    Flip Electronics BDX34CG 2,647
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    Vyrian BDX34CG 1,029
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    Rochester Electronics LLC BDX34CG

    TRANS PNP DARL 100V 10A TO-220
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    DigiKey BDX34CG Bulk 304
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    BDX34CG Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BDX33C

    Contextual Info: BDX33B, BDX33C NPN BDX34B, BDX34C (PNP) Darlington Complementary Silicon Power Transistors These devices are designed for general purpose and low speed switching applications. Features • High DC Current Gain − hFE = 2500 (typ.) at IC = 4.0 • Collector−Emitter Sustaining Voltage at 100 mAdc


    Original     		BDX33B, BDX33C BDX34B, BDX34C BDX334B BDX33C, BDX334C 33C/34B, BDX33C PDF

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor PDF

    BDX33CG

    Abstract: BDX33BG BDX334 BDX33C Box 34C BDX334B BDX34CG BDX33B BDX34B BDX34C
    Contextual Info: BDX33B, BDX33C* NPN BDX34B, BDX34C* (PNP) BDX33C and BDX34C are Preferred Devices Darlington Complementary Silicon Power Transistors These devices are designed for general purpose and low speed switching applications. Features •ăHigh DC Current Gain - hFE = 2500 (typ.) at IC = 4.0


    Original     		BDX33B, BDX33C* BDX34B, BDX34C* BDX33C BDX34C BDX334B BDX33C, BDX334C BDX33CG BDX33BG BDX334 Box 34C BDX334B BDX34CG BDX33B BDX34B PDF

    33c marking

    Abstract: BDX33BG box 34b BDX334B BDX33CG BDX334
    Contextual Info: BDX33B, BDX33C NPN BDX34B, BDX34C (PNP) Darlington Complementary Silicon Power Transistors These devices are designed for general purpose and low speed switching applications. Features • High DC Current Gain − hFE = 2500 (typ.) at IC = 4.0 • Collector−Emitter Sustaining Voltage at 100 mAdc


    Original     		BDX33B, BDX33C BDX34B, BDX34C BDX334B BDX33C, BDX334C 33C/34B, 33c marking BDX33BG box 34b BDX334B BDX33CG BDX334 PDF

    BDX34C

    Abstract: 10 amp pnp darlington power transistors BDX33CG BDX33C BDX34CG BDX33B BDX34B marking 33c diode
    Contextual Info: BDX33B, BDX33C* NPN BDX34B, BDX34C* (PNP) BDX33C and BDX34C are Preferred Devices Darlington Complementary Silicon Power Transistors These devices are designed for general purpose and low speed switching applications. Features • High DC Current Gain − hFE = 2500 (typ.) at IC = 4.0


    Original     		BDX33B, BDX33C* BDX34B, BDX34C* BDX33C BDX34C BDX334B BDX33C, BDX334C 10 amp pnp darlington power transistors BDX33CG BDX34CG BDX33B BDX34B marking 33c diode PDF