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    BDY58 Search Results

    BDY58 Datasheets (20)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF PDF Size Page count
    BDY58
    		Comset Semiconductors NPN SILICON TRANSISTOR, DIFFUSED MESA Original PDF 154.65KB 3
    BDY58
    		Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=125 / Ic=25 / Hfe=20-60 / fT(Hz)=7M / Pwr(W)=175 Original PDF 10.99KB 1
    BDY58
    		Unknown Shortform Transistor PDF Datasheet Short Form PDF 163KB 1
    BDY58
    		Unknown Transistor Replacements Scan PDF 80.54KB 1
    BDY58
    		Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF 65.36KB 1
    BDY58
    		Unknown Semiconductor Master Cross Reference Guide Scan PDF 118.2KB 1
    BDY58
    		Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 110.84KB 1
    BDY58
    		Unknown Shortform Transistor Datasheet Guide Short Form PDF 86.67KB 1
    BDY58
    		SGS-Thomson Transistor Datasheet Scan PDF 164.31KB 4
    BDY58
    		Solitron Devices Pro Electron Power Transistors Scan PDF 214.79KB 2
    BDY58
    		Thomson-CSF Condensed Data Book 1977 Scan PDF 43.86KB 1
    BDY58
    		Thomson-CSF Power Transistor Data Book 1975 Scan PDF 165.74KB 7
    BDY58
    		Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF 133.26KB 1
    BDY58A
    		Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=125 / Ic=25 / Hfe=20-60 / fT(Hz)=7M / Pwr(W)=175 Original PDF 10.98KB 1
    BDY58B
    		Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package Original PDF 11.8KB 1
    BDY58C
    		Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package Original PDF 11.8KB 1
    BDY58R
    		Unknown Shortform Transistor PDF Datasheet Short Form PDF 138.64KB 1
    BDY58R
    		Unknown Shortform Transistor PDF Datasheet Short Form PDF 143.81KB 1
    BDY58R
    		Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 110.84KB 1
    BDY58S
    		Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package Original PDF 10.97KB 1

    BDY58 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BDY57

    Abstract: BDY58
    Contextual Info: Inchange Semiconductor Product Specification BDY57 BDY58 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High current capability ・Fast switching speed APPLICATIONS ・For use in low frequency large signal power amplifications PINNING See Fig.2


    Original     		BDY57 BDY58 BDY57 10MHz BDY58 PDF

    BDY58

    Abstract: BDY57
    Contextual Info: SavantIC Semiconductor Product Specification BDY57 BDY58 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High current capability ·Fast switching speed APPLICATIONS ·For use in low frequency large signal power amplifications PINNING See Fig.2


    Original     		BDY57 BDY58 BDY57 10MHz BDY58 PDF

    BDY58S

    Contextual Info: BDY58S Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		BDY58S O204AA) 31-Jul-02 BDY58S PDF

    BDY58B

    Contextual Info: BDY58B Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		BDY58B O204AA) 31-Jul-02 BDY58B PDF

    BDY58C

    Contextual Info: BDY58C Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		BDY58C O204AA) 31-Jul-02 BDY58C PDF

    Transistor bdy 58

    Abstract: Tektronix 7603 BDY58 emetteur Tektronix
    Contextual Info: NPN SILIC O N TR A N S IS TO R S , D IF F U S E D MESA DUT J / BDY58 TR A N S IS TO R S NPN S IL IC IU M , M ESA D IF F U S E S LF large signal power amplification A m p lific a tio n B F grands signaux de puissance 8 0 V \ 125 V V CEO High current fast switching


    OCR Scan     		BDY58 CB-19 Transistor bdy 58 Tektronix 7603 BDY58 emetteur Tektronix PDF

    Contextual Info: BDY58R Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V) I(C) Max. (A)25 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		BDY58R Freq48M eq48M PDF

    Contextual Info: BDY58A Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		BDY58A O204AA) 18-Jun-02 PDF

    Contextual Info: BDY58 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		BDY58 O204AA) 16-Jul-02 PDF

    Contextual Info: BDY58B Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)125 V(BR)CBO (V) I(C) Max. (A)25 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)


    Original     		BDY58B PDF

    bdy58

    Contextual Info: Æ T SGS-THOMSON Deæi[LIOro iDOi BDY58 HIGH CURRENT NPN SILICON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The BDY58 is a silicon multiepitaxial planar NPN transistor in Jedec TO-3 metal case. It is intended for use in switching and linear applications in


    OCR Scan     		BDY58 BDY58 PDF

    Contextual Info: BDY58A Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		BDY58A O204AA) 16-Jul-02 PDF

    Contextual Info: BDY58S Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		BDY58S O204AA) 18-Jun-02 PDF

    Contextual Info: BDY58B Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		BDY58B O204AA) 18-Jun-02 PDF

    Contextual Info: BDY58A Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)125 V(BR)CBO (V) I(C) Max. (A)25 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)


    Original     		BDY58A PDF

    BDY77

    Abstract: BFR99 BDY79 BDY58B BDY61 BDY71 BFQ36 BDY45 BDY54 BDY55
    Contextual Info: 4ÖE ì> m 0133167 DGGG450 4 T Ì SEMELAB ISMLB SEMELAB LTD T.Ay.a , BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY HI-REL Type Num ber BDY45 BDY46 BI1Y47 BDY54 BDY55 BDY56 BDY57 BDY58 BDY58A BDY58B BDY58C BDY60 BÜY61 BDY62 BDY71 BDY72 BDY73 BDY74


    OCR Scan     		BDY45 20min DDY46 BDY54 BDY55 BDY56 BDY57 BDY58 BDY77 BFR99 BDY79 BDY58B BDY61 BDY71 BFQ36 PDF

    bdy58

    Abstract: BDY57
    Contextual Info: BDY57 – BDY58 NPN SILICON TRANSISTORS, DIFFUSED MESA LF Large Signal Power Amplification High Current Fast Switching ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Current


    Original     		BDY57 BDY58 bdy58 BDY57 PDF

    BDY58

    Abstract: BDY57 Comset
    Contextual Info: BDY57 – BDY58 NPN SILICON TRANSISTORS, DIFFUSED MESA LF Large Signal Power Amplification High Current Fast Switching ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Current


    Original     		BDY57 BDY58 BDY58 BDY57 Comset PDF

    Contextual Info: BDY58 MECHANICAL DATA Dimensions in mm HIGH CURRENT NPN SILICON TRANSISTOR 4 0 .0 1 1 .5 7 5 M a x . FEATURES 2 6 .6 7 (1 .0 5 0 ) M a x . 4 .4 7 (0 .1 7 6 ) R a d . 2 P ls . 2 2 .2 3 (0 .8 7 5 ) M a x . 1 1 .4 3 (0 .4 5 0 ) 6 .3 5 (0 .2 5 0 ) 1 2 .1 9 (0 .4 8 )


    Original     		BDY58 10MHz PDF

    Contextual Info: BDY58B Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		BDY58B O204AA) 16-Jul-02 PDF

    Contextual Info: BDY58C Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		BDY58C O204AA) 18-Jun-02 PDF

    bdy58s

    Contextual Info: BDY58S Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		BDY58S O204AA) 16-Jul-02 bdy58s PDF

    Contextual Info: BDY58 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)125 V(BR)CBO (V)160 I(C) Max. (A)30 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)5.0m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		BDY58 Freq10M PDF

    Contextual Info: BDY58C Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)125 V(BR)CBO (V) I(C) Max. (A)25 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)


    Original     		BDY58C PDF