BE MARKING PNP Search Results
BE MARKING PNP Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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2SA1213 |
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PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini |
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TTA011 |
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PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PW-Mini |
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TTA2070 |
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PNP Bipolar Transistor / VCEO=-50 V / IC=-1 A / hFE=200~500 / VCE(sat)=-0.20V / tf=90 ns / PW-Mini |
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TTA013 |
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PNP Bipolar Transistor / VCEO=-120 V / IC=-2.5 A / hFE=120~240 / VCE(sat)=-0.32 V / tf=65 ns / PW-Mini |
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TPCP8606 |
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PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PS-8 |
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BE MARKING PNP Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LMBT4403LT1G • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 3 ORDERING INFORMATION Device Marking Shipping 1 LMBT4403LT1G 2T 3000/Tape & Reel LMBT4403LT3G |
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LMBT4403LT1G 3000/Tape LMBT4403LT3G 10000/Tape 236AB) | |
Contextual Info: LESHAN RADIO COMPANY, LTD. Low Noise Transistor PNP Silicon LMBT5087LT1G • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 3 ORDERING INFORMATION 1 Device Shipping Marking LMBT5087LT1G 2Q 3000/Tape & Reel LMBT5087LT3G 2Q |
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LMBT5087LT1G LMBT5087LT3G 3000/Tape 10000/Tape 236AB) | |
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LMBT3906LT1G • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 3 ORDERING INFORMATION Device 1 Marking 2 Shipping LMBT3906LT1G 2A 3000/Tape & Reel LMBT3906LT3G |
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LMBT3906LT1G 3000/Tape LMBT3906LT3G 10000/Tape 236AB) | |
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-353 Plastic-Encapsulate Transistors UMA11N dual digital transistors PNP+PNP SOT-353 FEATURES z Two DTA143Z chips in a package z Mounting cost and area can be cut in half Marking: A11 1 Equivalent circuit |
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OT-353 UMA11N OT-353 DTA143Z -10mA 100MHz | |
2SD2045Contextual Info: 2SD2045 NPN - PNP Plastic-Encapsulate Transistors Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free SOT-26 FEATURE 40V complementary device Mounting cost and area can be cut in half High hFE D MARKING H A |
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2SD2045 OT-26 -750mA, -15mA 19-Nov-2013 2SD2045 | |
F MARKING 6PINContextual Info: IMT4 Transistor, dual, PNP Features Dimensions Units : mm • available in SMT6 (IMD, SC-74) package • package marking: T4 • package contains two independent PNP transistors (2SA1514K) IM T4 (SMT6) • same size as SMT3(SMT, SC-59), so same placement machine can be |
OCR Scan |
SC-74) 2SA1514K) SC-59) F MARKING 6PIN | |
Q62702-C2158
Abstract: Q62702-C2159 Q62702-C2160 transistor marking T2 C2160 H12E k 30 transistor transistor T1 marking 3JS IC marking vt
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Q62702-C2158 Q62702-C2159 Q62702-C2160 OT-143 Q62702-C2158 Q62702-C2159 Q62702-C2160 transistor marking T2 C2160 H12E k 30 transistor transistor T1 marking 3JS IC marking vt | |
BCV62CContextual Info: SIEMENS PNP Silicon Double Transistors • • • • BCV62 To be used as a current mirror Good thermal coupling and Vbe matching High current gain Low emitter-saturation voltage Type Marking Ordering Code tape and reel BCV 62 A BCV 62 B BCV 62 C 3Js 3Ks |
OCR Scan |
BCV62 Q62702-C2158 Q62702-C2159 Q62702-C2160 OT-143 BCV62C | |
BCV62Contextual Info: BCV 62 PNP Silicon Double Transistor • To be used as a current mirror • Good thermal coupling and VBE matching • High current gain • Low collector-emitter saturation voltage C2 1 C1 (2) Tr.1 Tr.2 E1 (3) E2 (4) EHA00013 Type Marking Ordering Code |
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EHA00013 Q62702-C2158 Q62702-C2159 Q62702-C2160 OT-143 EHN00004 Feb-11-1998 EHP00939 EHP00941 BCV62 | |
Contextual Info: SIEMENS PNP Silicon Double Transistors • • • • BCV62 To be used as a current mirror Good thermal coupling and Vbe matching High current gain Low emitter-saturation voltage Type Marking Ordering Code tape and reel BCV 62 A BCV 62 B BCV 62 C 3Js 3Ks |
OCR Scan |
BCV62 Q62702-C2158 Q62702-C2159 Q62702-C2160 OT-143 EHP00939 E35bGS D1HCH47 | |
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-6LPlastic-Encapsulate Transistors CJ2045 SOT-23-6L Dual 40V complementary transistors FEATURES z 40V complementary device z High hFE z Mounting cost and area can be cut in half MARKING: 2045 EQUIVALENT CIRCUIT |
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OT-23-6LPlastic-Encapsulate CJ2045 OT-23-6L | |
VPS05178Contextual Info: BCV 62 PNP Silicon Double Transistor 3 • To be used as a current mirror • Good thermal coupling and VBE matching • High current gain 4 • Low collector-emitter saturation voltage 2 C2 1 C1 (2) 1 Tr.1 VPS05178 Tr.2 E1 (3) E2 (4) EHA00013 Type Marking |
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VPS05178 EHA00013 OT-143 EHN00004 Oct-22-1999 EHP00939 EHP00941 VPS05178 | |
e2 marking
Abstract: MARKING 120 sot143 BCV62 BCV62A BCV62B BCV62C BFP181 VPS05178 transistor marking E2 marking 3Ls
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BCV62 VPS05178 EHA00013 BCV62A OT143 BCV62B BCV62C e2 marking MARKING 120 sot143 BCV62 BCV62A BCV62B BCV62C BFP181 VPS05178 transistor marking E2 marking 3Ls | |
Contextual Info: BCV62 PNP Silicon Double Transistor 3 To be used as a current mirror Good thermal coupling and VBE matching 4 High current gain Low collector-emitter saturation voltage 2 C2 1 C1 (2) 1 Tr.1 VPS05178 Tr.2 E1 (3) E2 (4) EHA00013 Type Marking Pin Configuration |
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BCV62 VPS05178 EHA00013 BCV62A BCV62B BCV62C OT143 OT143 | |
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BCV62B
Abstract: marking 3ks BCV62 BCV62A BCV62C VPS05178
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BCV62 VPS05178 EHA00013 BCV62A OT143 BCV62B BCV62C EHN00004 BCV62B marking 3ks BCV62 BCV62A BCV62C VPS05178 | |
DTA144T
Abstract: DTC144T T108
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200mW SC-74 DTA144T DTC144T T108 | |
Contextual Info: IMD8A Transistors Digital Transistor Dual Digital Transistors for Inverter Drive IMD8A VEBO IC 5 100 V mA Pc Tstg 300(TOTAL) −55~+150 mW °C ∗ 200mW per element must not be exceeded. 0.3to0.6 ∗ ROHM : SMT6 EIAJ : SC-74 !Package, marking, and packaging specifications |
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DTA144T DTC144T 200mW SC-74 | |
Contextual Info: Power management dual digital transistors IMD16A Features 1) Two digital class transistors in a SMT package. 2) Up to 500mA can be driven. 3) Low VCE(sat) of drive transistors for low power dissipation. Dimensions (Unit : mm) (4) (5) (6) (3) (2) (1) Package, marking, and packaging specifications |
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IMD16A 500mA SC-74 R0039A | |
transistor t2
Abstract: 61 TRANSISTOR Q62702-C2158 transistor marking T2 marking BCV Q62702-C2159 Q62702-C2160 Q62702-C2155 transistor T1 Q62702-C2157
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Q62702-C2155 Q62702-C2156 Q62702-C2157 OT-143 transistor t2 61 TRANSISTOR Q62702-C2158 transistor marking T2 marking BCV Q62702-C2159 Q62702-C2160 Q62702-C2155 transistor T1 Q62702-C2157 | |
IMD16A
Abstract: T108 IMD16
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IMD16A 500mA SC-74 R0039A IMD16A T108 IMD16 | |
xw2z-200T
Abstract: OMRON XW2Z-200T
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V530-R160E, V530-R160E xw2z-200T OMRON XW2Z-200T | |
F150-S1A
Abstract: omron F150-s1a XW2Z-200S-V XW2Z-200T F160-VP rca camera ccd F160-N64S
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V530-R160E, V530-R160E V530-R160EP. F150-S1A omron F150-s1a XW2Z-200S-V XW2Z-200T F160-VP rca camera ccd F160-N64S | |
F150-M05L-2D
Abstract: V400-F250 F150-M05L v400-w24 CSM1203 CS1W-CIF31 omron f150 RC-232C V400-W23P countersunk
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V400-F 7032-811-0/Fax: 847-843-7900/Fax: 6835-3011/Fax: 21-5037-2222/Fax: Q148-E1 F150-M05L-2D V400-F250 F150-M05L v400-w24 CSM1203 CS1W-CIF31 omron f150 RC-232C V400-W23P countersunk | |
CS1W-CIF31
Abstract: F150-M05L F150-M05L-2D omron f150 RC-232C V400-F250 CE 2711 omron V400 v400-w24 V400-W23P
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V400-F Q148-E1-02 CS1W-CIF31 F150-M05L F150-M05L-2D omron f150 RC-232C V400-F250 CE 2711 omron V400 v400-w24 V400-W23P |