BEC NPN Search Results

BF370R

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR BF370R TO-92 BEC Low Level Amplifier Transistor. ABSOLUTE MAXIMUM RATINGS DESCRIPTION VALUE VCBO 40 Collector -Base Voltage VCEO 15 Collector -Emitter Voltage

BF370R

Contextual Info: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR TRANSISTOR BF370R TO-92 BEC Low Level Amplifier Transistor. ABSOLUTE MAXIMUM RATINGS DESCRIPTION

SE5035

Abstract: vhf amplifier RF POWER TRANSISTOR 100MHz
Contextual Info: Datasheet C C ItfM l . • — SE5035 NPN SILICON RF TRANSISTOR Semiconductor Corp. JEDEC T O -7 2 CASE BEC 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 Manufacturers of World Class Discrete Semiconductors

BF370R

Contextual Info: Transys Electronics L I M I T E D NPN SILICON PLANAR TRANSISTOR BF370R TO-92 BEC Low Level Amplifier Transistor. ABSOLUTE MAXIMUM RATINGS DESCRIPTION VALUE VCBO 40 Collector -Base Voltage VCEO 15 Collector -Emitter Voltage VEBO 4.5 Emitter Base Voltage IC

Fuji-SVEA

Abstract: transistor RF 2SC1590
Contextual Info: 2SC1590 Silicon NPN Transistor RF Power Output The 2SC1590 is a silicon NPN epitaxial planer type transistor designed for 136-174MHz RF power amplifiers on VHF band mobile radio applications. BEC WINTransceiver Features: High Power Gain: Gpe >/= 10dB VCC = 13.5V, PO = 6W, f = 175MHz

2SC9014

Abstract: BEC npn 2SC9013 SOT-23 BTA43 BTA70 BA811 2SC1623L6 BT3904 BTA42 BT5551
Contextual Info: SOT-23 SMD Products Photograph of Products: Performance and Characteristics: NPN Silicon General Purpose Power Transistors Type Ptot Ic VCEO mW (mA) (V) hFE Polar 123 Type Ptot Ic VCEO (mW) (mA) (V) hFE Polar 123 2SC1623L3 225 100 40 60～90 BEC BCW60A 225

Contextual Info: PRELIMINARY KSC5305D NPN SILICON TRANSISTOR TO-220 HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION • Built-in F ree-w h eelin g D iode m akes efficient anti saturation operation • S u itable for half bridge light ballast Applications • N o need to interest an h F E valu e bec au se of low variab le storage-tim e spread

100VJ

Abstract: bd950 BD949 BD952 BD954 BD956
Contextual Info: Q5-BEC-19S7 12=44 FROM 01132794449 TO MftGNftTEC P.02/08 B0950 BD954 IVI/\C3 IMA BD952 BD956 MECHANICAL DATA Dimensions in mm SILICON EPITAXIAL BASE 9.65 r 19 r.82 10.66 .4 82. 5 33 3 S3 D ia . 4.08 H I 1.39 2-66 r 3.42 1.01 1 52 Rad. r Q_ £- PNP POWER TRANSISTORS

KT802A

Abstract: KT802 DSAGER00035 K03J4
Contextual Info: C jxejiano B CGGP • . • : '•• o A. c : n o P T TPA1I3HCTOP T K ÏIâ KT802Â?:; /-.v SjiësKTp oHop hpexHH lia 3 aK aa-H âpH j Bec npiiôopa 6es .HâKHÆHoro ^ jia n u a 22 . V v .% ^ \ ! ■\ ,1/ r,W.—-—-—i—-,•. äSeKTpHqecKHe napâMëTpbi npH 'T c = ~f25°C -h

marking 1A

Abstract: TMPT918 pt2222a
Contextual Info: NPN TRANSISTORS S O T -2 3/T O -23 6 A B 3 ELECTRICAL CHARACTERISTICS at T . = 25°C V V BR CBO v lBR)CEO Vishiebo Max. @ V CB Device Type v CE(sat) DC Current Gain ^CBO hFE hFE @ lc @ v ce Max. @ lc Min. Max. (mA) (V) (V) (nA) (V) 20 5.0 100 20 110 220 2.0

BEC npn

Abstract: SOT-23 EBC PT2221 N54 SOT-23
Contextual Info: ALLEGRO MICROSYSTEMS INC blE D • D5G433Ô 000^365 T17 M A L 6 R NPN TRANSISTORS S O T -2 3 /T O -2 3 6 A B 3 2 S /M / ELECTRICAL CHARACTERISTICS at TA = 25°C M a rkin g Type 8 D e v ic e 3 i < ^CBO V BR CFO V (V) (BR)EBO M ax . @ VCB (V) <nA) (V) vCE(sat|

t2221

Abstract: 50J301 pt5088
Contextual Info: NPN TRANSISTORS ELECTRICAL CHARACTERISTICS a t Tt = 25 C A M a rk in g T ype 3 1 O D e vice V T BB CEO V LBfljESO M ax. @ VCB (V> (V) v CE(aat) DC C u rre n t G ain ^CBO <nA) (V) h FE h FE @ i c @ v CE Max. @ lc M in. M ax. (m A ) (V) (V) (m A ) lr M in. @ lc

TMPTA06

Abstract: TMPT2222A marking 1p TMPTA42 marking 1R NPN TMPT6427 tmpt3904 BEC npn V7560
Contextual Info: NPN TRANSISTORS SO T-23/TO -236A B ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain *CB0 V|BR CBO V|BR)CEO Device Type Marking V) TMPT2222A 1P 75 40 TMPT3904 1A 60 40 TMPT4401 2X 60 TMPT5089 1R TMPT6427 TMPTA06 TMPTA42 1D V (BR)EBO Max. V cb hFE

BCX29

Abstract: BF199 RF Bf240 BF906 CEB npn BF368 BF199 BCX25 BCX26 BCX28
Contextual Info: I N D U S T R I A L T R A N S I S T O R S TO-92 These devices are special prodbcts ranges intended fo r use in applications w hich require well specified high perform ing devices like high q u a lity am plifier differen tial input, driver stage. NPN PN P

Contextual Info: Small Signal RF/VHF/UHF Transistors Part No. Polarity VCEO V 2N5770 MPS5179 MPSH10 MPSH11 PN3563 PN918 NPN 15 12 25 25 15 15 fT Min. @ Max. (MHz) (MHz) 900 900 650 650 600 600 1800 2000 1500 1500 VCE & IC VCE IC Cob Max. (V) (mA) (pF) 6 10 10 10 - 8 5 4

n3904

Abstract: CEB npn BF509 pnp BF959 BF240 CEB BF255 BF371 MOTOROLA MPSH81 BF241 CEB MPS3640
Contextual Info: SMALL-SIGNAL TRANSISTORS — PLASTIC continued RF Transistors The RF transistors are designed for Small Signal am plification from RF to VHF/UHF frequencies. They are also used as mixers and oscillators in the same frequency ranges. Several types are AGC characterised. The transistors are listed in

Contextual Info: Small Signal Transistors TO-92 Case Continued TO-92 TYPE NO. FAMILY LEAD CODE (V) (V) (V) W e v CE lC hFE VC BO v CEO v EBO •CBO » VCB0 (V) (V) (mA) VCE(S/IlT ) 0 i C Cob (V) (mA) »T NF •off <PF) (MHz) (dB) *c * MPSA25 NPN DARLINGTON EBC MIN 40

MPSA94

Abstract: MPSA25 MPSA26 MPSA27 MPSA28 MPSA29 MPSA42 MPSA44 MPSA45 MPSA55
Contextual Info: Small Signal Transistors TO-92 Case Continued TYPE NO. DESCRIPTION LEAD VCBO VCEO VEBO ICBO @ VCB (nA) hFE @ VCE @ IC VCE (SAT) @ IC Cob fT NF toff CODE (V) MPSA25 NPN DARLINGTON EBC MIN 40 (V) *VCES MIN 40* 30 *hFE (1kHZ) MIN MAX 10,000 - 5.0 100 1.50

PN3568

Abstract: MPSA65 MPSA25 MPSA26 MPSA27 MPSA28 MPSA29 MPSA42 MPSA44 MPSA45
Contextual Info: Small Signal Transistors TO-92 Case Continued TYPE NO. DESCRIPTION LEAD VCBO VCEO VEBO ICBO @ VCB (nA) hFE @ VCE @ IC VCE (SAT) @ IC Cob fT NF toff CODE (V) MPSA25 NPN DARLINGTON EBC MIN 40 (V) *VCES MIN 40* 30 *hFE (1kHZ) MIN MAX 10,000 - 5.0 100 1.50

BEC npn

Abstract: MJE13003 transistor MX-MICROELECTRONICS TO-251 PACKAGE MJE13003 power switch MTE13001 600 servo controler MJE13002 2SB772
Contextual Info: MX-MICROELECTRONICS TO-251 PACKAGE Applied widely for: • • • Applied for power drive power switch . Applied foe energy saving lights,regulators and power switch circuits. DT combined transistors,applied for communication controlers and servo motor modulation.

S100 NPN Transistor

Abstract: BF603 S100 transistor BF503 Q62702-F574 S100 S400 transistor 503
Contextual Info: L¿ I 2SC D • flE35b05 GGG4507 S NPN Silicon RF Transistor I SI E 6 BF 503 SIEMENS AKTIENGESELLSCHAF BF 5 0 3 is an NPN silicon planar RF transistor in TO 92 plastic package 10 A 3 DIN 41868 . The transistor is particularly intended for use in VHF amplifiers, VH F mixers, and VHF

2SD1849

Contextual Info: Power Transistors 2SOT849 2SD1849 Silicon NPN Triple-Diffused Planar Type Package Dimensions Horizontal Deflection Output • Features • • • • • • Dam per diode built-in Minimizes external com ponent counts and simplifies circuitry High breakdown voltage, high reliability

PGI*372

Abstract: PGI367 PGI368 PGI369 PGI370 PGI371 PGI373 PGI374 PGI375
Contextual Info: 0 0 4 3 592 • ’.ir.-.',- ; A~P i ELECTRONres •; INC .1^3 •# W ^DDHBS^B 10 AMP NPN PLANAR TO-61 isolated a 0000117 J - " -.P- ’ 60 MHz (typical) 40 WATT at 100°0 PGI367 MAXIMUM RATINGS at 25 °0 * PG1368 PG1371 PG1374 PGI369 PG1372 PG1375 Collector-Base VoLtage

S100 NPN Transistor

Contextual Info: u r 2SC D • fl23 Sb05 GGQ4507 S NPN Silicon RF Transistor isiEG : -~r-S i- M BF 503 -SIEMENS AKTIENGESELLSCHAF - ;— BF 5 0 3 is an NPN silicon planar RF transistor in TO 9 2 plastic package 1 0 A 3 DIN 4 1 8 6 8 .