BF10 Search Results

Contextual Info: 5 1 2 3 4 Global Connector Technology Ltd. - BF105: 2.0mm PITCH SOCKET, DUAL ROW, THROUGH HOLE, HORIZONTAL, SIDE ENTRY 6 7 8 A A B B C C D D E E SPECIFICATIONS 规格 CURRENT RATING 电流额定值：2.0 AMP INSULATION RESISTANCE 绝缘电阻值：1000 MΩ Min.

Contextual Info: 1 2 3 Global Connector Technology Ltd. - BF100: 2.0mm PITCH SOCKET, DUAL ROW, SURFACE MOUNT 5 4 6 7 8 A A B B C C D D E E SPECIFICATIONS 规格 Ordering Grid CURRENT RATING 电流额定值: 2 AMP INSULATOR RESISTANCE 绝缘电阻值: 1000 MEGOHMS MIN. BF100 XX

BF1005SR

Abstract: BF1005 BF1005S BF1005SW
Contextual Info: BF1005S. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!

BF1005

Abstract: VPS05178
Contextual Info: BF1005 Silicon N-Channel MOSFET Tetrode 3
For low noise, high gain controlled input stages up to 1GHz 4
Operating voltage 5V
Integrated stabilized bias network Drain AGC HF Input G2 G1 2 HF Output + DC GND 1 VPS05178 EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!

BF1009SR

Contextual Info: BF1009SR Dual - MOS FET Monolithic Integrated Circuit
For low noise, high gain controlled input stages up to 1GHz
Operating voltage 9V
Integrated stabilized bias network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!

BF1009SW

Contextual Info: BF1009S. Silicon N_Channel MOSFET Tetrode • For low noise, high gain controlled input stage up to 1 GHz • Operating voltage 9 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!

CRYDOM BF100

Abstract: PA100V 24V to 0-10v POTENTIOMETER BF100V angle phase control PA100V-0-10V PA100 4-20ma ssr 100C
Contextual Info: C3VZDDM BF100 and PA100 EUROPE SSR Control Modules Features: □ Burst Firing and Phase Angle control versions □ Directly mounted to SSR □ LED output indication □ Remote or local control BF100 Series modules are time proportional "Burst Firing" controllers for use with zero

BF1005S

Abstract: VPS05178
Contextual Info: BF1005S Silicon N-Channel MOSFET Tetrode 3
For low noise, high gain controlled input stages up to 1GHz 4
Operating voltage 5V
Integrated stabilized bias network Drain AGC HF Input G2 G1 2 HF Output + DC GND 1 VPS05178 EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!

BF1005SR

Abstract: marking NZs
Contextual Info: BF1005SR Dual - MOS FET Monolithic Integrated Circuit
For low noise, high gain controlled input stages up to 1GHz
Operating voltage 5V
Integrated stabilized bias network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!

BF1005SR

Contextual Info: BF1005S. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!

BF1009SW

Abstract: BF1009S BF1009SR BF1009W
Contextual Info: BF1009S. Silicon N_Channel MOSFET Tetrode • For low noise, high gain controlled input stage up to 1 GHz • Operating voltage 9 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: 3 1 2 4 Global Connector Technology Ltd. - BF105: 2.0mm PITCH SOCKET, DUAL ROW, THROUGH HOLE, HORIZONTAL, SIDE ENTRY 5 6 7 8 A A B B C C D D E E SPECIFICATIONS 规格 CURRENT RATING 电流额定值： 2.0 AMPERE INSULATION RESISTANCE 绝缘电阻值： 1000M Ω Min.

BF1009S

Abstract: VPS05178
Contextual Info: BF1009S Silicon N-Channel MOSFET Tetrode 3
For low noise, high gain controlled input stages up to 1GHz 4
Operating voltage 9V
Integrated bias network 2 Drain AGC HF Input G2 G1 HF Output + DC GND 1 VPS05178 EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!

BF1009SW

Abstract: marking g1s
Contextual Info: BF1009SW Silicon N-Channel MOSFET Tetrode 3
For low noise, high gain controlled 4 input stages up to 1GHz
Operating voltage 9V
Integrated bias network Drain AGC HF Input G2 G1 2 HF Output + DC GND 1 VPS05605 EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!

BF1005

Abstract: BF1005R BF1005W BFP181 BFP181R
Contextual Info: BF1005. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing network • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 Drain AGC RF Input

BF1005

Contextual Info: BF1005. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing network Drain AGC HF Input G2 G1 GND HF Output + DC EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: BF1005S. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!

BF1009SW

Abstract: BF1009 marking code g2s
Contextual Info: BF1009S. Silicon N_Channel MOSFET Tetrode • For low noise, high gain controlled input stage up to 1 GHz • Operating voltage 9 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: BF1005. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing network Drain AGC RF Input G2 G1 RF Output + DC GND ESD Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: SIEMENS BF1012S Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • Integrated stabilized bias network ESD: Electrostatic discharge sensitive device, observe handling precaution! BF 1012S

bf1012s

Abstract: BF1012 VPS05178
Contextual Info: BF1012S Silicon N-Channel MOSFET Tetrode 3
For low noise, high gain controlled input stages up to 1GHz 4
Operating voltage 12V
Integrated stabilized bias network Drain AGC HF Input G2 G1 2 HF Output + DC GND 1 VPS05178 EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!

siemens MOSFET 14

Abstract: Marking G1s
Contextual Info: SIEMENS BF1009S Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 9V • Integrated bias network Z AGC o - X - HF o Input Droin G21 HF O utput + DC G1 1 GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!

GBF10M1

Abstract: BF10K2 GLF05F1 CF10N 20-TAP
Contextual Info: A Passive Surface-Mount Delay Lines Designed for automatic insertion. 10-Tap Chip-Carrier Passive Delay Line— V2 " Sq. Part No. Part No. Part No. BJF10D1Œ GBF1OD10D BJF10F1S BF10F1Œ BF10D1Œ BF10F1 Hi BJF10G1Œ BJF10K1 BF10G1Œ BF10K1 BJF10L1 BJF10M1

DB1-822

Abstract: BF1012
Contextual Info: SIEMENS BF1012S Silicon N-Channel MOSFET Tetrode X AGC o HF o— Input - X Drain G2 I HF Output + DC Gl 1 GND ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code PIN Configuration BF 1012S NYs Q62702-F1627