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BF966 Datasheets (20)

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
BF966	Philips Semiconductors	Silicon N-Channel Dual Gate MOS FET	Original	PDF	70.96KB	3
BF966	Unknown	Cross Reference Datasheet	Scan	PDF	38.45KB	1
BF966	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	101.25KB	1
BF966	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	105.31KB	1
BF966	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF	42.73KB	1
BF966	Telefunken Electronic	N-Channel Dual Gate MOS Field Effect Tetrode - Depletion Mode	Scan	PDF	609.29KB	10
BF966S	Philips Semiconductors	Silicon N-Channel Dual Gate MOS FET	Original	PDF	160.32KB	5
BF966S	Siemens	Cross Reference Guide 1998	Original	PDF	27.35KB	7
BF966S	Vishay Intertechnology	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode	Original	PDF	129.87KB	8
BF966S	Vishay Telefunken	TRANS MOSFET N-CH 20V 0.03A 4TO-50	Original	PDF	185.61KB	8
BF966S	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF	83.98KB	1
BF966S	Unknown	Cross Reference Datasheet	Scan	PDF	38.45KB	1
BF966S	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	101.25KB	1
BF966S	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	105.31KB	1

BF966S	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF	42.73KB	1
BF966S	Philips Semiconductors	SILICON N-CHANNEL DUAL GATE MOS-FET	Scan	PDF	28.39KB	1
BF966SA	Vishay Intertechnology	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode	Original	PDF	129.87KB	8
BF966SA	Vishay Telefunken	TRANS MOSFET N-CH 20V 0.03A 4TO-50	Original	PDF	185.61KB	8
BF966SB	Vishay Intertechnology	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode	Original	PDF	129.87KB	8
BF966SB	Vishay Telefunken	TRANS MOSFET N-CH 20V 0.03A 4TO-50	Original	PDF	185.61KB	8

BF966 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
S852T Abstract: BF579 T0-50 BF964S BF96 BFP183T Contextual Info: Tem ic Semiconduct ors Selector Guide Dual-Gate Si-MOSFETs N-Channel Depletion Mode Number BF961 BF964S BF966S BF988 BF994S BF995 BF996S BF998 S525T S888T VD5 V 20 20 20 12 20 20 20 12 20 10 lümax mA 30 30 30 30 30 30 30 30 30 20 Iy2isl at Ids mA mS 15	OCR Scan	BF961 BF964S BF966S BF988 BF994S BF995 BF996S BF998 S525T S888T S852T BF579 T0-50 BF96 BFP183T	PDF
BF966S Abstract: BF966SA BF966SB Contextual Info: BF966S N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixerstages especially for UHF-tuners. Features D High AGC-range D Low feedback capacitance D Low input capacitance	Original	BF966S BF966S D-74025 23-Jan-97 BF966SA BF966SB	PDF
BF966 Contextual Info: BF966S VISHAY Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • 4 Integrated gate protection diodes High cross modulation performance Low noise figure High AGC-range Low feedback capacitance	Original	BF966S BF966S D-74025 20-Aug-04 BF966	PDF
TO50 package Abstract: BF966 BF966S Contextual Info: BF966S Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • • • 4 Integrated gate protection diodes High cross modulation performance e3 Low noise figure High AGC-range Low feedback capacitance	Original	BF966S 2002/95/EC 2002/96/EC BF966S BF966SA BF966SB BF966d D-74025 TO50 package BF966	PDF
BF966S Abstract: transistor BG 23 Contextual Info: 7 1 1 DÖ2 b 0 0 1 3 7 5 4 2 b l 3 M PHIN BF966S SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package w ith source and substrate interconnected, intended fo r u.h.f. applications in television tuners and professional communication equipment.	OCR Scan	711002b BF966S 7Z80878 0Db754fci BF966S transistor BG 23	PDF
2804SLS2 Abstract: BF966 BF966S BF966SA BF966SB Contextual Info: BF966S Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages especially UHF-tuners. Features D Integrated gate protection diodes	Original	BF966S BF966S D-74025 20-Jan-99 2804SLS2 BF966 BF966SA BF966SB	PDF
BF966 Abstract: bf966 TRANSISTOR k 246 transistor fet sot103 Contextual Info: N AUER PHILIPS/DISCRETE ObE D • bt.S3T31 O D IS TTE ■ BF966 A SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effeot transistor in a plastic X-package w ith source and substrate Interconnected, intended fo r u.h.f. applications in television tuners and professional communication equipment.	OCR Scan	b53131 BF966 800MHz BF966 bf966 TRANSISTOR k 246 transistor fet sot103	PDF
BF966S Abstract: BF966SA BF966SB 0V128 Contextual Info: BF966S Vishay Semiconductors N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages especially UHF-tuners. Features D Integrated gate protection diodes	Original	BF966S BF966S D-74025 20-Jan-99 BF966SA BF966SB 0V128	PDF
dual-gate Abstract: BF966S Contextual Info: Philips Semiconductors Short-form product specification Silicon N-channel dual-gate MOS-FET BF966S APPLICATIONS • UHF applications in television tuners and professional communications equipment. DESCRIPTION Depletion type field-eftect transistor in a plastic X-package	OCR Scan	BF966S dual-gate BF966S	PDF
dual-gate Contextual Info: Philips Semiconductors Short-form product specification Silicon N-channel dual-gate MOS-FET BF966S APPLICATIONS • UHF applications in television tuners and professional communications equipment. DESCRIPTION Depletion type field-effect transistor in a plastic X-package	OCR Scan	BF966S dual-gate	PDF
Contextual Info: BF966S v m rn r ▼ Vishay Telefunken N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode E lectrostatic sensitive device. O bserve precautions fo r handling. A Applications Input- and m ixer stages especially U H F-tuners. Features • Integrated gate protection diodes	OCR Scan	BF966S BF966S 20-Jan-99	PDF
Contextual Info: BF966S _ J v _ SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package with source and substrate interconnected, intended fo r u.h.f. applications in television tuners and professional communication equipment.	OCR Scan	BF966S bbS3331 003ST36	PDF
BF966 Contextual Info: N ANER PHILIPS/DISCRETE ObE D • ■ bbS3T31 aQ12c17E 0 ■ ■ BF966 T'3 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package w ith source and substrate interconnected, intended fo r u.h.f. applications in television tuners and professional communication equipment.	OCR Scan	bbS3T31 aQ12c BF966 BF966	PDF
BF966 Abstract: BF966S BF966SA BF966SB Contextual Info: BF966S N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixerstages especially for UHF-tuners. Features D Integrated gate protection diodes D High cross modulation performance	Original	BF966S BF966S D-74025 23-Jan-97 BF966 BF966SA BF966SB	PDF

BF966S Contextual Info: Tem ic BF966S S e m i c o n d u c t o r s N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. ^ Applications Input- and mixerstages especially for UHF-tuners. Features • Integrated gate protection diodes	OCR Scan	BF966S BF966S 23-Jan-97	PDF
Contextual Info: BF966S VISHAY Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • 4 Integrated gate protection diodes High cross modulation performance Low noise figure High AGC-range Low feedback capacitance	Original	BF966S BF966S D-74025 20-Aug-04	PDF
transistor BG 23 Abstract: BF966S Contextual Info: b3E J> m bbSBTSM 007430D b4T « S I C 3 BF966S J NAPC/PHILIPS SEHICOND FOR D E T A ILE D IN FO R M A TIO N SEE THE LATEST ISSUE OF HANDBO OK SC07 OR DATASHEET SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package w ith source and substrate interconnected,	OCR Scan	BF966S transistor BG 23 BF966S	PDF
BF966 Contextual Info: BF966S VISHAY Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • 4 Integrated gate protection diodes High cross modulation performance Low noise figure High AGC-range Low feedback capacitance	Original	BF966S BF966S D-74025 03-Sep-04 BF966	PDF
buz90af Abstract: P7NB60FP P4NB80FP P6N60 P5NB60FP 2SK30A buz91a 2SK2645 BUZ100 2SK163 Contextual Info: _ HHTEPTEKC Ten: 495 739-09-95, 644-41-29 TpaH3MCTopw N-FET copTMpoBKa no HanpflweHMro U DS Kofl: 2SK192 2SK212 2SK241 BF960 BF961 BF964 BF966S BF981 BF996 2N3819 2N5457 2SK125 BFR31 J309 J310 2N4416 BF245A BF245B BF245C BF256A BF256B J111 J112 2N4391	OCR Scan	2SK192 2SK212 2SK241 BF960 BF961 BF964 BF966S BF981 OT103 BF996 buz90af P7NB60FP P4NB80FP P6N60 P5NB60FP 2SK30A buz91a 2SK2645 BUZ100 2SK163	PDF
40673 MOSFET Abstract: MFE131 mosfet 3SK77GR 3N159 40673 MPF201 MFE521 3SK77BL 3N200 MOSFET 3SK107F Contextual Info: MOSFET Item Number Part Number Manufacturer V BR OSS M loss Max (A) Po Max (W) ros (on) (Ohms) 9FS Min (S) VGS(th) Max (V) Cln Max (F) tr Max (s) tt Max (s) Toper Max (OC) Package Style N-Channel Dual-Gate T trode, (Cont' d) 5 10 BF964 BF966 BF966 BF966 3SK107E	Original	BF964 BF966 3SK107E 3SK107F 3SK107G BF996S 40673 MOSFET MFE131 mosfet 3SK77GR 3N159 40673 MPF201 MFE521 3SK77BL 3N200 MOSFET	PDF
CFY19 Abstract: CFY19-18 CFY19-22 BF995 BF963 CFY10 BF961 BF964S BF965 CFY65-14 Contextual Info: Microwave, RF & Tuner Transistors For complete package outlines, refer to pages PO-1 through PO-6 MOS Field Effect Transistors " BF961 BF963 BF964S BF965 BF966S BF988 BF987 Triode V DS V ^DS niA Pt mW 20 20 20 20 20 12 20 30 50 30 30 30 30 30 200 200 200	OCR Scan	E35bOS DD45427 BF961 BF995 BF963 BF993 BF964S BF994S BF965 BF997 CFY19 CFY19-18 CFY19-22 BF995 CFY10 CFY65-14	PDF
BF966S Abstract: BF966SA BF966SB Contextual Info: BF966S Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages especially UHF-tuners. Features D Integrated gate protection diodes	Original	BF966S BF966S D-74025 20-Jan-99 BF966SA BF966SB	PDF
BF966S Abstract: BF966 BF966SA BF966SB TO50 package Contextual Info: BF966S Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • • • 4 Integrated gate protection diodes High cross modulation performance e3 Low noise figure High AGC-range Low feedback capacitance	Original	BF966S 2002/95/EC 2002/96/EC 08-Apr-05 BF966S BF966 BF966SA BF966SB TO50 package	PDF
BFT97 Abstract: Siemens 1985 BFT65 bfr91a siemens BFQ64P BFT98T BFS55A bf254 BFR96S Contextual Info: S IE M E N S / SPCLt SEMICONDS ' ' ?QC D • fiS 3b 3E Q 0013325 1 ■ RF Transistors Type PNP= P NPN= N Typical Application epitaxial=E planar = PL E, PL Maximum Ratings Vcbo V VcEO (V) ^80 (V) (mA) fe ft (°C) 40 25 4 25 150 Plot (mW) (°C/W) 500 N Uncontrolled TV IF amplifier stages	OCR Scan	BF199 BF240 BF241 BF254 BF255 BF414 BF420 BF420L BF421 BF421L BFT97 Siemens 1985 BFT65 bfr91a siemens BFQ64P BFT98T BFS55A BFR96S	PDF

BF966 Search Results

BF966 Price and Stock

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BF966 Datasheets (20)

BF966 Datasheets Context Search

S852T

BF966S

BF966

TO50 package

BF966S

2804SLS2

BF966

BF966S

dual-gate

dual-gate

BF966

BF966

BF966S

transistor BG 23

BF966

buz90af

40673 MOSFET

CFY19

BF966S

BF966S

BFT97