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NXP Semiconductors BF992,215 RF MOSFET 10V SOT143B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BF992,215	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Newark	BF992,215	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.207	Buy Now
NXP Semiconductors BF998,215 RF MOSFET 8V SOT143B
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DigiKey	BF998,215	Cut Tape				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	BF998,215	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Newark	BF998,215	Cut Tape			3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
NXP Semiconductors BF998,235 RF MOSFET 8V SOT143B
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DigiKey	BF998,235	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
NXP Semiconductors BF998R,235 RF MOSFET 8V SOT143R
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DigiKey	BF998R,235	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
NXP Semiconductors BF994S,215 RF MOSFET 15V SOT143B
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DigiKey	BF994S,215	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Bristol Electronics	BF994S,215		1,192			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	BF994S,215		953			1 $2.5 10 $2.5 100 $2.5 1000 $0.875 10000 $0.875	Buy Now
	BF994S,215		953			1 $2.5 10 $2.5 100 $2.5 1000 $0.875 10000 $0.875	Buy Now

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BF99 Datasheets (243)

Part	Manufacturer	Description	Datasheet Type	PDF
BF990	Philips Semiconductors	Silicon N-Channel Dual Gate MOS FET	Original	PDF
BF990	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
BF990	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
BF990	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
BF990A	Philips Semiconductors	N-Channel Dual-Gate MOS-FET	Original	PDF
BF990A	Philips Semiconductors	Silicon N-Channel Dual Gate MOS FET	Original	PDF
BF990A	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
BF990A	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
BF990A	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
BF990A	Philips Semiconductors	Silicon N-Channel Dual Gate MOS FET	Scan	PDF
BF990AR	Philips Semiconductors	Silicon N-Channel Dual Gate MOS FET	Original	PDF
BF990AR	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
BF990AR	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
BF990AR	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF

BF990AR	Philips Semiconductors	SILICON N-CHANNEL DUAL GATE MOS-FET	Scan	PDF
BF990ART/R	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
BF990ATR	Philips Semiconductors	N-channel dual-gate MOS-FET	Original	PDF
BF990AT/R	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
BF991	NXP Semiconductors	BF991 - N-channel dual-gate MOS-FET - CIS TYP: 2.1 pF; COS: 1.1 pF; ID: 20 mA; IDSS: 4 to 25 mA; IDSS min.: 1.1 mA; Noise figure: 1.0@800MHz dB; Note: With external bias ; Remarks: VHF ; -V(P)GS MAX: 2.5 V; VDSmax: 20 V; YFS min.: 10 mS	Original	PDF
BF991	Philips Semiconductors	N-Channel Dual-Gate MOS-FET	Original	PDF

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BF99 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
BF991 Abstract: dual-gate Text: BF991 N-channel dual-gate MOS-FET Rev. 03 — 20 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact	Original	PDF	BF991 BF991 dual-gate
bf998rb Abstract: BF998 BF998R BF998RAW BF998RW application BF998 Text: BF998/BF998R/BF998RW Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input and mixer stages in UHF tuners. Features D D D D D Low input capacitance	Original	PDF	BF998/BF998R/BF998RW BF998R BF998 BF998RW D-74025 23-Jun-99 bf998rb BF998RAW application BF998
Untitled Abstract: No abstract text available Text: BF996S Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages in UHF tuners. Features D Integrated gate protection diodes D Low noise figure	Original	PDF	BF996S BF996S D-74025 20-Jan-99
application BF998 Abstract: BF998R 800MHz BF998 Text: BF998/BF998R/BF998RW Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input and mixer stages in UHF tuners. Features D D D D D Low input capacitance	Original	PDF	BF998/BF998R/BF998RW BF998 BF998R BF998RW D-74025 23-Jun-99 application BF998 BF998R 800MHz
Untitled Abstract: No abstract text available Text: BF995 Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages especially for FM- and VHF TV-tuners up to 300 MHz. Features D Integrated gate protection diodes	Original	PDF	BF995 BF995 D-74025 20-Jan-99
Untitled Abstract: No abstract text available Text: BF995 Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • • • Integrated gate protection diodes High cross modulation performance e3 Low noise figure High AGC-range Low feedback capacitance	Original	PDF	BF995 2002/95/EC 2002/96/EC OT-143 08-Apr-05
BF998RAW-GS08 Abstract: No abstract text available Text: Not for new design, this product will be obsoleted soon BF998/BF998R/BF998RW Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • • • • • Integrated gate protection diodes Low noise figure	Original	PDF	BF998/BF998R/BF998RW 2002/95/EC 2002/96/EC OT143 OT143R OT343R BF998 OT143 18-Jul-08 BF998RAW-GS08
Untitled Abstract: No abstract text available Text: BF996S Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • • • • Integrated gate protection diodes Low noise figure e3 Low feedback capacitance High cross modulation performance Low input capacitance	Original	PDF	BF996S 2002/95/EC 2002/96/EC OT-143 08-Apr-05
BF998R 800MHz Abstract: BF998 BF998 VISHAY BF998R BF998RAW BF998RW BF998 depletion application BF998 Text: BF998/BF998R/BF998RW Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input and mixer stages in UHF tuners. Features D D D D D Low input capacitance	Original	PDF	BF998/BF998R/BF998RW BF998 BF998R BF998RW D-74025 23-Jun-99 BF998R 800MHz BF998 VISHAY BF998RAW BF998 depletion application BF998
BF994 Abstract: BF994S BF994SA BF994SB sot-143 vishay telefunken Text: BF994S Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages especially VHF TV-tuners. Features D Integrated gate protection diodes	Original	PDF	BF994S BF994 D-74025 20-Jan-99 BF994S BF994SA BF994SB sot-143 vishay telefunken
BF990A Abstract: PHILIPS MOSFET MARKING 4814 mosfet dual-gate Text: DISCRETE SEMICONDUCTORS DATA SHEET BF990A N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF990A FEATURES DESCRIPTION • Protected against excessive input voltage surges by	Original	PDF	BF990A OT143 SCA52 117061/00/02/pp8 BF990A PHILIPS MOSFET MARKING 4814 mosfet dual-gate
Untitled Abstract: No abstract text available Text: BF996SR Transistors N-Channel; Dual-Gate Tetrode MOSFET V BR DSS (V)20 V(BR)GSS (V)17 I(D) Max. (A)30m I(DM) Max. (A) Pulsed I(D) @Temp (øC) Absolute Max. Power Diss. (W)300m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Amb.	Original	PDF	BF996SR
Untitled Abstract: No abstract text available Text: BF996 Transistors N-Channel; Dual-Gate Tetrode MOSFET V BR DSS (V)20 V(BR)GSS (V) I(D) Max. (A)30m I(DM) Max. (A) Pulsed I(D) @Temp (øC) Absolute Max. Power Diss. (W)200m¥ Minimum Operating Temp (øC) Maximum Operating Temp (øC)150þ Thermal Resistance Junc-Amb.	Original	PDF	BF996
BF996S Abstract: GPS25 829 Tetrode Text: BF996S N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input and mixer stages in UHF tuner. Features D High cross modulation performance D Low input capacitance D High AGC-range	Original	PDF	BF996S BF996S 30the D-74025 17-Apr-96 GPS25 829 Tetrode

gl 1117 ax Abstract: BF994 Text: Tem ic BF994S S e m i c o n d u c t o r s N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode E lectrostatic sensitive device. O bserve precautions for handling. M Applications Input and m ixer stages especially for V H F TV-tuners. Features • Integrated gate protection diodes	OCR Scan	PDF	BF994S BF994S 03-Mar-97 gl 1117 ax BF994
S852T Abstract: BF579 T0-50 BF964S BF96 BFP183T Text: Tem ic Semiconduct ors Selector Guide Dual-Gate Si-MOSFETs N-Channel Depletion Mode Number BF961 BF964S BF966S BF988 BF994S BF995 BF996S BF998 S525T S888T VD5 V 20 20 20 12 20 20 20 12 20 10 lümax mA 30 30 30 30 30 30 30 30 30 20 Iy2isl at Ids mA mS 15	OCR Scan	PDF	BF961 BF964S BF966S BF988 BF994S BF995 BF996S BF998 S525T S888T S852T BF579 T0-50 BF96 BFP183T
fet MARKING MHp Abstract: sot143 code marking MS FET marking code marking ANs marking L1 fet BF996S Text: BF996S PHILIPS INTERNATIONAL 5 bE D 711002b D 0 3 l+D7û ÖTß • PHIN F O R D E T A IL E D IN F O R M A T IO N SEE T H E L A T E S T ISSUE OF H A N D B O O K SC07 O R D A T A S H E E T T - 35-27 SILICON N-CHANNEL DUAL GATE MOS-FET D e pletion ty p e fie ld -e ffe c t tra n sisto r in a plastic SO T143 m icro m in ia tu re envelope w ith source and	OCR Scan	PDF	BF996S OT143 OT143. fet MARKING MHp sot143 code marking MS FET marking code marking ANs marking L1 fet BF996S
BF998 depletion Abstract: BF988 bf988 sot 143 BF998 Text: viSM A Y ▼ _ BF998/BF998R Vishay Telefunken N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. A Applications Input- and mixer stages in UHF tuners. Features	OCR Scan	PDF	BF998/BF998R BF998R) BF998 BF998R D-74025 20-Jan-99 BF998 depletion BF988 bf988 sot 143
Untitled Abstract: No abstract text available Text: BF994S ymmt ▼ Vishay Telefunken N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode E le c tro s ta tic s e n s itiv e d e v ic e . O b s e rv e p re c a u tio n s fo r h a n d lin g . A Applications In p u t- an d m ix e r s ta g e s e s p e c ia lly V H F T V -tu n e rs .	OCR Scan	PDF	BF994S 20-Jan-99
mosfet marking code gg Abstract: marking g1s marking code g1s Text: 711002b G 0 b a ? n TTT H P H I N BF997 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected, intended for u.h.f. and v.h.f. applications, such as u.h.f./v.h.f. television	OCR Scan	PDF	711002b BF997 OT143 mosfet marking code gg marking g1s marking code g1s
Untitled Abstract: No abstract text available Text: bbS3T31 QDE473T fill « A P X N AKER PHILIPS/DISCRETE BF991 b?E D 7 V SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope w ith source and substrate interconnected. This MOS-FET tetrode is intended for use in v.h.f. applications, such as v.h.f.	OCR Scan	PDF	bbS3T31 QDE473T BF991 OT143 OT103
Marking G1s Abstract: No abstract text available Text: I bbS3131 [][]P3bP3 bat. • APX BF992R N AUER PHILIPS/DISCRETE L7E D yv SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143R microminiature envelope w ith source and substrate interconnected. This MOS-FET tetrode is intended fo r use in VHF applications, such as VHF	OCR Scan	PDF	bbS3131 BF992R OT143R Marking G1s
BF998 Abstract: No abstract text available Text: BF998/BF998R/BF998RW Vishay Telefunken N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input and mixer stages in UHF tuners. Features • Integrated gate protection diodes	OCR Scan	PDF	BF998/BF998R/BF998RW BF998 BF998R 23-Jun-99 BF998RW
marking CODE M92 Abstract: No abstract text available Text: • bbS3T31 0023blfi a n ■ APX BF992 N AUER PHI LIP S/ DIS CR ETE L7E D _ SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SO T143 m icrom iniature envelope w ith source and substrate interconnected. T his M O S-FET tetrode is intended for use in v.h.f. applications, such as v.h.f.	OCR Scan	PDF	bbS3T31 0023blfi BF992 0023b22 marking CODE M92

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BF99 Price and Stock

NXP Semiconductors BF992,215

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BF99 Datasheets (243)

BF99 Datasheets Context Search

BF991

bf998rb

Untitled

application BF998

Untitled

Untitled

BF998RAW-GS08

Untitled

BF998R 800MHz

BF994

BF990A

Untitled

Untitled

BF996S

gl 1117 ax

S852T

fet MARKING MHp

BF998 depletion

Untitled

mosfet marking code gg

Untitled

Marking G1s

BF998

marking CODE M92