BF998R Search Results
BF998R Datasheets (36)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BF998R |
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Single Non Biased; Package: PG-SOT143-4; ID (max): 30.0 mA; Ptot (max): 200.0 mW; gfs (typ): 24.0 mS; Gp (typ): 20.0 dB; F (typ): 1.8 dB; | Original | 90.38KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BF998R |
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Silicon N-Channel MOSFET Tetrode | Original | 252.54KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BF998R |
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Silicon N-Channel MOSFET Tetrode | Original | 84.95KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BF998R |
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BF998R - Silicon N-channel dual-gate MOS-FETs - CIS TYP: 2.1 pF; COS: 1.05 pF; ID: 30 mA; IDSS: 2 to 18 mA; IDSS min.: 1.05 mA; Noise figure: 1@800MHz dB; Note: With external bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 2 V; VDSmax: 12 V; YFS min.: 21 mS | Original | 121.33KB | 15 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BF998R |
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Silicon N-channel dual-gate MOS-FETs | Original | 116.68KB | 12 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BF998R |
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Silicon N-Channel Dual Gate MOS-FET | Original | 224.07KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BF998R | Siemens | Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor) | Original | 34.74KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BF 998R | Siemens | MOSFET, Silicon N-Channel MOSFET Tetrode | Original | 34.74KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BF998R | Vishay Telefunken | TRANS MOSFET N-CH 12V 0.03A 4SOT-143R | Original | 223.35KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BF998R | Vishay Telefunken | N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode | Original | 158.64KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BF998R |
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Silicon N-Channel Dual Gate MOS-FET | Scan | 290.75KB | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BF998R,215 |
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BF998 - TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, MICRO MINIATURE, PLASTIC PACKAGE-4, FET RF Small Signal | Original | 121.33KB | 15 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BF998R,215 |
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Silicon N-channel dual-gate MOS-FETs - CIS TYP: 2.1 pF; COS: 1.05 pF; ID: 30 mA; IDSS: 2 to 18 mA; IDSS min.: 1.05 mA; Noise figure: 1@800MHz dB; Note: With external bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 2 V; VDSmax: 12 V; YFS min.: 21 mS; Package: SOT143R (SC-61B); Container: Tape reel smd | Original | 77.79KB | 12 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BF998R,235 |
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BF998R - Silicon N-channel dual-gate MOS-FETs, SOT143R Package, Standard Marking, Reel Pack, SMD, Low Profile, Large | Original | 121.33KB | 15 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BF998R,235 |
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Silicon N-channel dual-gate MOS-FETs - CIS TYP: 2.1 pF; COS: 1.05 pF; ID: 30 mA; IDSS: 2 to 18 mA; IDSS min.: 1.05 mA; Noise figure: 1@800MHz dB; Note: With external bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 2 V; VDSmax: 12 V; YFS min.: 21 mS; Package: SOT143R (SC-61B); Container: Tape reel smd | Original | 77.79KB | 12 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BF998RA | Vishay Telefunken | TRANS MOSFET N-CH 12V 0.03A 4SOT-143R | Original | 223.35KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BF998RA | Vishay Telefunken | N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode | Original | 158.64KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BF998RA-GS08 | Vishay Telefunken | TRANS MOSFET N-CH 12V 0.03A 4SOT-143R | Original | 223.35KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BF998RAW | Vishay Telefunken | TRANS MOSFET N-CH 12V 0.03A 4SOT-343R | Original | 223.35KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BF998RAW | Vishay Telefunken | N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode | Original | 158.64KB | 9 |
BF998R Price and Stock
NXP Semiconductors BF998R,215RF MOSFET 8V SOT143R |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BF998R,215 | Reel |
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BF998R,215 | Cut Tape | 3,000 |
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BF998R,215 | 913 |
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NXP Semiconductors BF998R,235RF MOSFET 8V SOT143R |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BF998R,235 | Reel |
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BF998R,235 | 737 |
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Infineon Technologies AG BF998RE6327HTSA1RF MOSFET 8V SOT143R |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BF998RE6327HTSA1 | Reel |
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BF998RE6327HTSA1 | 420 |
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UNKNOWN BF998R-E6327 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BF998R-E6327 | 2,192 |
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tfk BF998RWBGS08Power Field-Effect Transistor, 0.03A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BF998RWBGS08 | 2,875 |
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BF998R Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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bf998rb
Abstract: BF998 BF998R BF998RAW BF998RW application BF998
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BF998/BF998R/BF998RW BF998R BF998 BF998RW D-74025 23-Jun-99 bf998rb BF998RAW application BF998 | |
BF998 depletion
Abstract: BF988 bf988 sot 143 BF998
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OCR Scan |
BF998/BF998R BF998R) BF998 BF998R D-74025 20-Jan-99 BF998 depletion BF988 bf988 sot 143 | |
application BF998
Abstract: BF998R 800MHz BF998
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BF998/BF998R/BF998RW BF998 BF998R BF998RW D-74025 23-Jun-99 application BF998 BF998R 800MHz | |
BF998RAW-GS08Contextual Info: Not for new design, this product will be obsoleted soon BF998/BF998R/BF998RW Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • • • • • Integrated gate protection diodes Low noise figure |
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BF998/BF998R/BF998RW 2002/95/EC 2002/96/EC OT143 OT143R OT343R BF998 OT143 18-Jul-08 BF998RAW-GS08 | |
BF998R 800MHz
Abstract: BF998 BF998 VISHAY BF998R BF998RAW BF998RW BF998 depletion application BF998
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BF998/BF998R/BF998RW BF998 BF998R BF998RW D-74025 23-Jun-99 BF998R 800MHz BF998 VISHAY BF998RAW BF998 depletion application BF998 | |
BF998Contextual Info: BF998/BF998R/BF998RW Vishay Telefunken N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input and mixer stages in UHF tuners. Features • Integrated gate protection diodes |
OCR Scan |
BF998/BF998R/BF998RW BF998 BF998R 23-Jun-99 BF998RW | |
BF998 vishay
Abstract: application BF998 12864
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BF998 BF998R BF998RW OT-143 OT-143R OT-343R OT-143 OT-143R BF998 vishay application BF998 12864 | |
BF998B-GS08
Abstract: NATIONAL SEMICONDUCTOR MARKING CODE sot-143 sot143 code marking MS BF998A BF998A-GS08 BF998 VISHAY application BF998 BF998RAW-GS08
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BF998 BF998R BF998RW 2002/95/EC 2002/96/EC OT-143 OT-143R OT-343R OT-143 BF998B-GS08 NATIONAL SEMICONDUCTOR MARKING CODE sot-143 sot143 code marking MS BF998A BF998A-GS08 BF998 VISHAY application BF998 BF998RAW-GS08 | |
G2S 076 AAContextual Info: Tem ic BF998RW S e m i c o n d u c t o r s N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages in UHF- and VHF-tuner Features • • • • • |
OCR Scan |
BF998RW BL998RW 07-Nov-97 G2S 076 AA | |
Contextual Info: BF998 / BF998R / BF998RW Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • • • SOT-143 Integrated gate protection diodes Low noise figure Low feedback capacitance High cross modulation performance |
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BF998 BF998R BF998RW OT-143 OT-143R OT-343R BF998 OT-143 OT-343R | |
BF998R
Abstract: BF998 MGA002 MGE802 application BF998 dual-gate
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BF998; BF998R MAM039 R77/02/pp15 BF998R BF998 MGA002 MGE802 application BF998 dual-gate | |
BF 998
Abstract: BF998 BF998R 4551
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BF998/BF998R BF998 BF998R D-74025 07-Mar-97 BF 998 4551 | |
BF998RW
Abstract: BF998 BF998R BF998RAW application BF998
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BF998/BF998R/BF998RW BF998R BF998 BF998RWmprove D-74025 23-Jun-99 BF998RW BF998RAW application BF998 | |
BF998
Abstract: MGA002 MGE802 BF998 depletion BF998R dual-gate bf-998 MGE812 bb405 MGE814
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BF998; BF998R MAM039 BF998 MGA002 MGE802 BF998 depletion BF998R dual-gate bf-998 MGE812 bb405 MGE814 | |
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Contextual Info: BF998 / BF998R / BF998RW VISHAY Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • • • Integrated gate protection diodes Low noise figure Low feedback capacitance High cross modulation performance |
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BF998 BF998R BF998RW OT-143 OT-143R OT-343R OT-143 OT-143R | |
BF998B
Abstract: BF998 VISHAY bf998 BF998A-GS08 BF998A BF998R BF998RA BF998RAW BF998RB BF998RW
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BF998 BF998R BF998RW OT-143 2002/95/EC 2002/96/EC OT-143R OT-343R OT-343R BF998B BF998 VISHAY BF998A-GS08 BF998A BF998RA BF998RAW BF998RB BF998RW | |
g1 TRANSISTOR SMD MARKING CODE
Abstract: marking code ff SMD Transistor TRANSISTOR SMD MARKING CODE BS t marking code ff p SMD Transistor smd marking mop NF marking TRANSISTOR SMD c4 marking TRANSISTOR SMD nf c1 marking TRANSISTOR SMD nf c4 BF998 g1 7 TRANSISTOR SMD MARKING CODE
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BF998; BF998R BF998R MAM039 BF998 g1 TRANSISTOR SMD MARKING CODE marking code ff SMD Transistor TRANSISTOR SMD MARKING CODE BS t marking code ff p SMD Transistor smd marking mop NF marking TRANSISTOR SMD c4 marking TRANSISTOR SMD nf c1 marking TRANSISTOR SMD nf c4 g1 7 TRANSISTOR SMD MARKING CODE | |
BF998
Abstract: MGA002 MGE802 bf998 Mop Dual-Gate cfs 455 j BB405 BF998R UGC469 marking code g1s
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OCR Scan |
BF998; BF998R OT143 OT143R 7110fl5b OT143. OT143R. BF998 MGA002 MGE802 bf998 Mop Dual-Gate cfs 455 j BB405 BF998R UGC469 marking code g1s | |
bf998 MOW
Abstract: marking code mow marking MOW sot143 MOW sot143 BF998B BF998B-GS08 BF998R marking MOW BF998 VISHAY BF998RAW-GS08
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BF998 BF998R BF998RW OT-143 OT-143R OT-343R BF998 OT-143 OT-343R bf998 MOW marking code mow marking MOW sot143 MOW sot143 BF998B BF998B-GS08 marking MOW BF998 VISHAY BF998RAW-GS08 | |
L-698
Abstract: L568 L718 ci 4518 L538 L491
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OCR Scan |
BF998RW BF998RW D-74025 07-Nov-97 L-698 L568 L718 ci 4518 L538 L491 | |
ap 4606
Abstract: SFE 7.02 MHz ap 4606 ic t469 SFE 8
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OCR Scan |
BF998/BF998R BF998 BF998R 07-Mar-97 ap 4606 SFE 7.02 MHz ap 4606 ic t469 SFE 8 | |
Contextual Info: BF998 / BF998R / BF998RW Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • • • • • SOT-143 Integrated gate protection diodes Low noise figure e3 Low feedback capacitance High cross modulation performance |
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BF998 BF998R BF998RW OT-143 2002/95/EC 2002/96/EC OT-143R OT-343R D-74025 | |
Contextual Info: BF998R Transistors N-Channel; Dual-Gate Tetrode MOSFET V BR DSS (V)12 V(BR)GSS (V)20 I(D) Max. (A)30m I(DM) Max. (A) Pulsed I(D) @Temp (øC) Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Amb.500 |
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BF998R | |
BF998R
Abstract: 998 transistor transistor BF 998
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BF998R OT143R sold00 EHT07305 EHT07306 Aug-10-2001 BF998R 998 transistor transistor BF 998 |