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    BF998R Search Results

    BF998R Datasheets (36)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    BF998R
    Infineon Technologies Single Non Biased; Package: PG-SOT143-4; ID (max): 30.0 mA; Ptot (max): 200.0 mW; gfs (typ): 24.0 mS; Gp (typ): 20.0 dB; F (typ): 1.8 dB; Original PDF 90.38KB 9
    BF998R
    Infineon Technologies Silicon N-Channel MOSFET Tetrode Original PDF 252.54KB 6
    BF998R
    Infineon Technologies Silicon N-Channel MOSFET Tetrode Original PDF 84.95KB 7
    BF998R
    NXP Semiconductors BF998R - Silicon N-channel dual-gate MOS-FETs - CIS TYP: 2.1 pF; COS: 1.05 pF; ID: 30 mA; IDSS: 2 to 18 mA; IDSS min.: 1.05 mA; Noise figure: 1@800MHz dB; Note: With external bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 2 V; VDSmax: 12 V; YFS min.: 21 mS Original PDF 121.33KB 15
    BF998R
    Philips Semiconductors Silicon N-channel dual-gate MOS-FETs Original PDF 116.68KB 12
    BF998R
    Philips Semiconductors Silicon N-Channel Dual Gate MOS-FET Original PDF 224.07KB 9
    BF998R
    Siemens Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor) Original PDF 34.74KB 2
    BF 998R
    Siemens MOSFET, Silicon N-Channel MOSFET Tetrode Original PDF 34.74KB 2
    BF998R
    Vishay Telefunken TRANS MOSFET N-CH 12V 0.03A 4SOT-143R Original PDF 223.35KB 8
    BF998R
    Vishay Telefunken N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Original PDF 158.64KB 9
    BF998R
    Philips Semiconductors Silicon N-Channel Dual Gate MOS-FET Scan PDF 290.75KB 10
    BF998R,215
    NXP Semiconductors BF998 - TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, MICRO MINIATURE, PLASTIC PACKAGE-4, FET RF Small Signal Original PDF 121.33KB 15
    BF998R,215
    NXP Semiconductors Silicon N-channel dual-gate MOS-FETs - CIS TYP: 2.1 pF; COS: 1.05 pF; ID: 30 mA; IDSS: 2 to 18 mA; IDSS min.: 1.05 mA; Noise figure: 1@800MHz dB; Note: With external bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 2 V; VDSmax: 12 V; YFS min.: 21 mS; Package: SOT143R (SC-61B); Container: Tape reel smd Original PDF 77.79KB 12
    BF998R,235
    NXP Semiconductors BF998R - Silicon N-channel dual-gate MOS-FETs, SOT143R Package, Standard Marking, Reel Pack, SMD, Low Profile, Large Original PDF 121.33KB 15
    BF998R,235
    NXP Semiconductors Silicon N-channel dual-gate MOS-FETs - CIS TYP: 2.1 pF; COS: 1.05 pF; ID: 30 mA; IDSS: 2 to 18 mA; IDSS min.: 1.05 mA; Noise figure: 1@800MHz dB; Note: With external bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 2 V; VDSmax: 12 V; YFS min.: 21 mS; Package: SOT143R (SC-61B); Container: Tape reel smd Original PDF 77.79KB 12
    BF998RA
    Vishay Telefunken TRANS MOSFET N-CH 12V 0.03A 4SOT-143R Original PDF 223.35KB 8
    BF998RA
    Vishay Telefunken N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Original PDF 158.64KB 9
    BF998RA-GS08
    Vishay Telefunken TRANS MOSFET N-CH 12V 0.03A 4SOT-143R Original PDF 223.35KB 8
    BF998RAW
    Vishay Telefunken TRANS MOSFET N-CH 12V 0.03A 4SOT-343R Original PDF 223.35KB 8
    BF998RAW
    Vishay Telefunken N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Original PDF 158.64KB 9
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    BF998R Price and Stock

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    NXP Semiconductors BF998R,215

    RF MOSFET 8V SOT143R
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    DigiKey BF998R,215 Reel
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    Newark BF998R,215 Cut Tape 3,000
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    Vyrian BF998R,215 913
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    NXP Semiconductors BF998R,235

    RF MOSFET 8V SOT143R
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    DigiKey BF998R,235 Reel
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    Vyrian BF998R,235 737
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    Infineon Technologies AG BF998RE6327HTSA1

    RF MOSFET 8V SOT143R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BF998RE6327HTSA1 Reel
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    Vyrian BF998RE6327HTSA1 420
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    UNKNOWN BF998R-E6327

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics BF998R-E6327 2,192
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    tfk BF998RWBGS08

    Power Field-Effect Transistor, 0.03A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA BF998RWBGS08 2,875
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    BF998R Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    bf998rb

    Abstract: BF998 BF998R BF998RAW BF998RW application BF998
    Contextual Info: BF998/BF998R/BF998RW Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input and mixer stages in UHF tuners. Features D D D D D Low input capacitance


    Original
    BF998/BF998R/BF998RW BF998R BF998 BF998RW D-74025 23-Jun-99 bf998rb BF998RAW application BF998 PDF

    BF998 depletion

    Abstract: BF988 bf988 sot 143 BF998
    Contextual Info: viSM A Y ▼ _ BF998/BF998R Vishay Telefunken N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. A Applications Input- and mixer stages in UHF tuners. Features


    OCR Scan
    BF998/BF998R BF998R) BF998 BF998R D-74025 20-Jan-99 BF998 depletion BF988 bf988 sot 143 PDF

    application BF998

    Abstract: BF998R 800MHz BF998
    Contextual Info: BF998/BF998R/BF998RW Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input and mixer stages in UHF tuners. Features D D D D D Low input capacitance


    Original
    BF998/BF998R/BF998RW BF998 BF998R BF998RW D-74025 23-Jun-99 application BF998 BF998R 800MHz PDF

    BF998RAW-GS08

    Contextual Info: Not for new design, this product will be obsoleted soon BF998/BF998R/BF998RW Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • • • • • Integrated gate protection diodes Low noise figure


    Original
    BF998/BF998R/BF998RW 2002/95/EC 2002/96/EC OT143 OT143R OT343R BF998 OT143 18-Jul-08 BF998RAW-GS08 PDF

    BF998R 800MHz

    Abstract: BF998 BF998 VISHAY BF998R BF998RAW BF998RW BF998 depletion application BF998
    Contextual Info: BF998/BF998R/BF998RW Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input and mixer stages in UHF tuners. Features D D D D D Low input capacitance


    Original
    BF998/BF998R/BF998RW BF998 BF998R BF998RW D-74025 23-Jun-99 BF998R 800MHz BF998 VISHAY BF998RAW BF998 depletion application BF998 PDF

    BF998

    Contextual Info: BF998/BF998R/BF998RW Vishay Telefunken N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input and mixer stages in UHF tuners. Features • Integrated gate protection diodes


    OCR Scan
    BF998/BF998R/BF998RW BF998 BF998R 23-Jun-99 BF998RW PDF

    BF998 vishay

    Abstract: application BF998 12864
    Contextual Info: BF998 / BF998R / BF998RW VISHAY Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • • • Integrated gate protection diodes Low noise figure Low feedback capacitance High cross modulation performance


    Original
    BF998 BF998R BF998RW OT-143 OT-143R OT-343R OT-143 OT-143R BF998 vishay application BF998 12864 PDF

    BF998B-GS08

    Abstract: NATIONAL SEMICONDUCTOR MARKING CODE sot-143 sot143 code marking MS BF998A BF998A-GS08 BF998 VISHAY application BF998 BF998RAW-GS08
    Contextual Info: BF998 / BF998R / BF998RW Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • • • • • SOT-143 Integrated gate protection diodes Low noise figure e3 Low feedback capacitance High cross modulation performance


    Original
    BF998 BF998R BF998RW 2002/95/EC 2002/96/EC OT-143 OT-143R OT-343R OT-143 BF998B-GS08 NATIONAL SEMICONDUCTOR MARKING CODE sot-143 sot143 code marking MS BF998A BF998A-GS08 BF998 VISHAY application BF998 BF998RAW-GS08 PDF

    G2S 076 AA

    Contextual Info: Tem ic BF998RW S e m i c o n d u c t o r s N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages in UHF- and VHF-tuner Features • • • • •


    OCR Scan
    BF998RW BL998RW 07-Nov-97 G2S 076 AA PDF

    Contextual Info: BF998 / BF998R / BF998RW Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • • • SOT-143 Integrated gate protection diodes Low noise figure Low feedback capacitance High cross modulation performance


    Original
    BF998 BF998R BF998RW OT-143 OT-143R OT-343R BF998 OT-143 OT-343R PDF

    BF998R

    Abstract: BF998 MGA002 MGE802 application BF998 dual-gate
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF998; BF998R Silicon N-channel dual-gate MOS-FETs Product specification Supersedes data of April 1991 1996 Aug 01 NXP Semiconductors Product specification Silicon N-channel dual-gate MOS-FETs BF998; BF998R FEATURES • Short channel transistor with high forward transfer


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    BF998; BF998R MAM039 R77/02/pp15 BF998R BF998 MGA002 MGE802 application BF998 dual-gate PDF

    BF 998

    Abstract: BF998 BF998R 4551
    Contextual Info: BF998/BF998R N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages in UHF- and VHF-tuner Features D D D D D D High AGC-range D High gain D Available with reverse pin configuration BF 998 R


    Original
    BF998/BF998R BF998 BF998R D-74025 07-Mar-97 BF 998 4551 PDF

    BF998RW

    Abstract: BF998 BF998R BF998RAW application BF998
    Contextual Info: BF998/BF998R/BF998RW Vishay Semiconductors N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input and mixer stages in UHF tuners. Features D D D D D Low input capacitance


    Original
    BF998/BF998R/BF998RW BF998R BF998 BF998RWmprove D-74025 23-Jun-99 BF998RW BF998RAW application BF998 PDF

    BF998

    Abstract: MGA002 MGE802 BF998 depletion BF998R dual-gate bf-998 MGE812 bb405 MGE814
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF998; BF998R Silicon N-channel dual-gate MOS-FETs Product specification Supersedes data of April 1991 File under Discrete Semiconductors, SC07 1996 Aug 01 Philips Semiconductors Product specification Silicon N-channel dual-gate MOS-FETs


    Original
    BF998; BF998R MAM039 BF998 MGA002 MGE802 BF998 depletion BF998R dual-gate bf-998 MGE812 bb405 MGE814 PDF

    Contextual Info: BF998 / BF998R / BF998RW VISHAY Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • • • Integrated gate protection diodes Low noise figure Low feedback capacitance High cross modulation performance


    Original
    BF998 BF998R BF998RW OT-143 OT-143R OT-343R OT-143 OT-143R PDF

    BF998B

    Abstract: BF998 VISHAY bf998 BF998A-GS08 BF998A BF998R BF998RA BF998RAW BF998RB BF998RW
    Contextual Info: BF998 / BF998R / BF998RW Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • • • • • SOT-143 Integrated gate protection diodes Low noise figure e3 Low feedback capacitance High cross modulation performance


    Original
    BF998 BF998R BF998RW OT-143 2002/95/EC 2002/96/EC OT-143R OT-343R OT-343R BF998B BF998 VISHAY BF998A-GS08 BF998A BF998RA BF998RAW BF998RB BF998RW PDF

    g1 TRANSISTOR SMD MARKING CODE

    Abstract: marking code ff SMD Transistor TRANSISTOR SMD MARKING CODE BS t marking code ff p SMD Transistor smd marking mop NF marking TRANSISTOR SMD c4 marking TRANSISTOR SMD nf c1 marking TRANSISTOR SMD nf c4 BF998 g1 7 TRANSISTOR SMD MARKING CODE
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF998; BF998R Silicon N-channel dual-gate MOS-FETs Product specification Supersedes data of April 1991 File under Discrete Semiconductors, SC07 1996 Aug 01 Philips Semiconductors Product specification Silicon N-channel dual-gate MOS-FETs


    Original
    BF998; BF998R BF998R MAM039 BF998 g1 TRANSISTOR SMD MARKING CODE marking code ff SMD Transistor TRANSISTOR SMD MARKING CODE BS t marking code ff p SMD Transistor smd marking mop NF marking TRANSISTOR SMD c4 marking TRANSISTOR SMD nf c1 marking TRANSISTOR SMD nf c4 g1 7 TRANSISTOR SMD MARKING CODE PDF

    BF998

    Abstract: MGA002 MGE802 bf998 Mop Dual-Gate cfs 455 j BB405 BF998R UGC469 marking code g1s
    Contextual Info: Product specification Philips Semiconductors Silicon N-channel dual-gate MOS-FETs BF998; BF998R FEATURES • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz. APPLICATIONS


    OCR Scan
    BF998; BF998R OT143 OT143R 7110fl5b OT143. OT143R. BF998 MGA002 MGE802 bf998 Mop Dual-Gate cfs 455 j BB405 BF998R UGC469 marking code g1s PDF

    bf998 MOW

    Abstract: marking code mow marking MOW sot143 MOW sot143 BF998B BF998B-GS08 BF998R marking MOW BF998 VISHAY BF998RAW-GS08
    Contextual Info: BF998 / BF998R / BF998RW Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • • • SOT-143 Integrated gate protection diodes Low noise figure Low feedback capacitance High cross modulation performance


    Original
    BF998 BF998R BF998RW OT-143 OT-143R OT-343R BF998 OT-143 OT-343R bf998 MOW marking code mow marking MOW sot143 MOW sot143 BF998B BF998B-GS08 marking MOW BF998 VISHAY BF998RAW-GS08 PDF

    L-698

    Abstract: L568 L718 ci 4518 L538 L491
    Contextual Info: Temic BF998RW Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. ^ Observe precautions for handling. M Applications Input- and mixer stages in UHF- and VHF-tuner Features • • • • • Integrated gate protection diodes


    OCR Scan
    BF998RW BF998RW D-74025 07-Nov-97 L-698 L568 L718 ci 4518 L538 L491 PDF

    ap 4606

    Abstract: SFE 7.02 MHz ap 4606 ic t469 SFE 8
    Contextual Info: Temic BF998/BF998R S e m i c o n d u c t o r s N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages in UHF- and VHF-tuner Features • • • •


    OCR Scan
    BF998/BF998R BF998 BF998R 07-Mar-97 ap 4606 SFE 7.02 MHz ap 4606 ic t469 SFE 8 PDF

    Contextual Info: BF998 / BF998R / BF998RW Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • • • • • SOT-143 Integrated gate protection diodes Low noise figure e3 Low feedback capacitance High cross modulation performance


    Original
    BF998 BF998R BF998RW OT-143 2002/95/EC 2002/96/EC OT-143R OT-343R D-74025 PDF

    Contextual Info: BF998R Transistors N-Channel; Dual-Gate Tetrode MOSFET V BR DSS (V)12 V(BR)GSS (V)20 I(D) Max. (A)30m I(DM) Max. (A) Pulsed I(D) @Temp (øC) Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Amb.500


    Original
    BF998R PDF

    BF998R

    Abstract: 998 transistor transistor BF 998
    Contextual Info: BF998R Silicon N-Channel MOSFET Tetrode  Short-channel transistor with high S/C quality factor  For low-noise, gain-controlled input stages up to 1 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF998R MRs Pin Configuration


    Original
    BF998R OT143R sold00 EHT07305 EHT07306 Aug-10-2001 BF998R 998 transistor transistor BF 998 PDF