BF998 DEPLETION Search Results

BF998R

Abstract: BF998 MGA002 MGE802 application BF998 dual-gate
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF998; BF998R Silicon N-channel dual-gate MOS-FETs Product specification Supersedes data of April 1991 1996 Aug 01 NXP Semiconductors Product specification Silicon N-channel dual-gate MOS-FETs BF998; BF998R FEATURES • Short channel transistor with high forward transfer

Contextual Info: DISCRETE SEMICONDUCTORS DAT BF998; BF998R Silicon N-channel dual-gate MOS-FETs Product specification Supersedes data of April 1991 1996 Aug 01 NXP Semiconductors Product specification Silicon N-channel dual-gate MOS-FETs BF998; BF998R FEATURES • Short channel transistor with high forward transfer

BF998 depletion

Abstract: BF988 bf988 sot 143 BF998
Contextual Info: viSM A Y ▼ _ BF998/BF998R Vishay Telefunken N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. A Applications Input- and mixer stages in UHF tuners. Features

bf998 MOW

Abstract: marking code mow marking MOW sot143 MOW sot143 BF998B BF998B-GS08 BF998R marking MOW BF998 VISHAY BF998RAW-GS08
Contextual Info: BF998 / BF998R / BF998RW Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • • • SOT-143 Integrated gate protection diodes Low noise figure Low feedback capacitance High cross modulation performance

BF998

Contextual Info: BF998/BF998R/BF998RW Vishay Telefunken N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input and mixer stages in UHF tuners. Features • Integrated gate protection diodes

BF998RW

Abstract: BF998 BF998R BF998RAW application BF998
Contextual Info: BF998/BF998R/BF998RW Vishay Semiconductors N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input and mixer stages in UHF tuners. Features D D D D D Low input capacitance

Contextual Info: BF998 / BF998R / BF998RW Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • • • SOT-143 Integrated gate protection diodes Low noise figure Low feedback capacitance High cross modulation performance

Contextual Info: BF998 / BF998R / BF998RW VISHAY Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • • • Integrated gate protection diodes Low noise figure Low feedback capacitance High cross modulation performance

Contextual Info: BF998 / BF998R / BF998RW Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • • • • • SOT-143 Integrated gate protection diodes Low noise figure e3 Low feedback capacitance High cross modulation performance

bf998rb

Abstract: BF998 BF998R BF998RAW BF998RW application BF998
Contextual Info: BF998/BF998R/BF998RW Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input and mixer stages in UHF tuners. Features D D D D D Low input capacitance

application BF998

Abstract: BF998R 800MHz BF998
Contextual Info: BF998/BF998R/BF998RW Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input and mixer stages in UHF tuners. Features D D D D D Low input capacitance

BF998R 800MHz

Abstract: BF998 BF998 VISHAY BF998R BF998RAW BF998RW BF998 depletion application BF998
Contextual Info: BF998/BF998R/BF998RW Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input and mixer stages in UHF tuners. Features D D D D D Low input capacitance

BF998

Abstract: MGA002 MGE802 bf998 Mop Dual-Gate cfs 455 j BB405 BF998R UGC469 marking code g1s
Contextual Info: Product specification Philips Semiconductors Silicon N-channel dual-gate MOS-FETs BF998; BF998R FEATURES • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz. APPLICATIONS

BF998 vishay

Abstract: application BF998 12864
Contextual Info: BF998 / BF998R / BF998RW VISHAY Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • • • Integrated gate protection diodes Low noise figure Low feedback capacitance High cross modulation performance

BF998RAW-GS08

Contextual Info: Not for new design, this product will be obsoleted soon BF998/BF998R/BF998RW Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • • • • • Integrated gate protection diodes Low noise figure

BF998B-GS08

Abstract: NATIONAL SEMICONDUCTOR MARKING CODE sot-143 sot143 code marking MS BF998A BF998A-GS08 BF998 VISHAY application BF998 BF998RAW-GS08
Contextual Info: BF998 / BF998R / BF998RW Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • • • • • SOT-143 Integrated gate protection diodes Low noise figure e3 Low feedback capacitance High cross modulation performance

BF998

Abstract: MGA002 MGE802 BF998 depletion BF998R dual-gate bf-998 MGE812 bb405 MGE814
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF998; BF998R Silicon N-channel dual-gate MOS-FETs Product specification Supersedes data of April 1991 File under Discrete Semiconductors, SC07 1996 Aug 01 Philips Semiconductors Product specification Silicon N-channel dual-gate MOS-FETs

g1 TRANSISTOR SMD MARKING CODE

Abstract: marking code ff SMD Transistor TRANSISTOR SMD MARKING CODE BS t marking code ff p SMD Transistor smd marking mop NF marking TRANSISTOR SMD c4 marking TRANSISTOR SMD nf c1 marking TRANSISTOR SMD nf c4 BF998 g1 7 TRANSISTOR SMD MARKING CODE
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF998; BF998R Silicon N-channel dual-gate MOS-FETs Product specification Supersedes data of April 1991 File under Discrete Semiconductors, SC07 1996 Aug 01 Philips Semiconductors Product specification Silicon N-channel dual-gate MOS-FETs

ap 4606

Abstract: SFE 7.02 MHz ap 4606 ic t469 SFE 8
Contextual Info: Temic BF998/BF998R S e m i c o n d u c t o r s N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages in UHF- and VHF-tuner Features • • • •

Contextual Info: bbS3T31 QQ23b34 4tl N AflER PHILIPS/DISCRETE b?E D Philips Semiconductors Data sheet status Product specification T APX BF998 date of issue April 1991 Silicon n-channel dual gate MOS-FET FEATURES QUICK REFERENCE DATA • Short channel transistor with high

BF998

Abstract: bf 107 a BF998R BF998 depletion BF998A k d 998 0
Contextual Info: BF998/BF998R N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages in UHF- and VHF-tuner Features D D D D D D High AGC-range D High gain D Available with reverse pin configuration BF 998 R

BF 998

Abstract: BF998 BF998R 4551
Contextual Info: BF998/BF998R N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages in UHF- and VHF-tuner Features D D D D D D High AGC-range D High gain D Available with reverse pin configuration BF 998 R

MAM184

Abstract: MOSFET Tetrode mosfet vhf power amplifier tetrode transistor BF998 mop top marking
Contextual Info: Philips Semiconductors Short-form product specification Silicon N-channel dual-gate MOS-FET BF998 FEATURES APPLICATIONS • Short channel transistor with high ratio I YfSl / Cis • VHF and UHF applications such as television tuners with 12 V supply voltage and professional

Contextual Info: Philips Semiconductors Data sheet sta tu s Product specification date o f issue April 1991 FEATURES BF998 Silicon n-channel dual gate M O S -FET QUICK REFERENCE DATA ratio |Y s l/Cis. • Low noise gain controlled am plifier to 1 GHz. PARAMETER SYMBOL • Short channel transistor with high