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    Untitled

    Abstract: No abstract text available
    Text: N APIER PH IL IP S/ D IS C R ET E b^E D • bbSa^l DD3QSSS 7TM « A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in


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    PDF -SOT186 BUK444-200A/B BUK444 -200A -200B 1E-03 Fk7-11

    TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT

    Abstract: No abstract text available
    Text: TIP125 TIP126 TIP127 _ / V SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial-base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. T O -220 plastic envelope. N-P-N complements are TIP120, TIP121


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    PDF TIP125 TIP126 TIP127 TIP120, TIP121 TIP122. TIP125 bti53T31 TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT

    BbN20

    Abstract: MSB003 BSN20
    Text: • Philips Semiconductors — bbS3T31 a0237t,S Tib ■ N AUER P H I L I P S / D I S C R E T E APX _ „ Product specification b7E D N-channel enhancement mode vertical D-MOS transistor FEATURES BSN20 QUICK REFERENCE DATA • Direct interface to C-MOS, TTL,


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    PDF a0237t BSN20 btiS3T31 237hfl BbN20 MM794 MRA78S VaSimat25 BbN20 MSB003 BSN20

    BFR94

    Abstract: Ferroxcube cross reference BFQ34 Ferroxcube core BFR94A f2nd transistor 3305
    Text: N AMER PHILIPS/DISCRETE 2SE D BFQ34 is recommended for new design • bbS3T31 DOlflOTS h U 11 BFR94 T -3 3 -0 S " N-P-N H.F. WIDEBAND TRANSISTOR N-P-N resistance-stabilized transistor in a SOT-48 capstan envelope featuring extremely low cross modulation, intermodulation and second harmonic distortion. Thanks to its high transition frequency


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    PDF bbS3T31 BFQ34 BFR94 T-33-Ã OT-48 VCE-20V BFR94 Ferroxcube cross reference Ferroxcube core BFR94A f2nd transistor 3305

    BUK445

    Abstract: K445 BUK445-500A BUK445-500B
    Text: N AMER PHILIPS/DISCRETE 2SE D • ^53=131 DOSOmO =1 ■ PowerMOS transistor BUK445-500A BUK445-500B T -2 1 -0 1 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in


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    PDF BUK445-500A BUK445-500B BUK445 -500A -500B K445 BUK445-500B

    Untitled

    Abstract: No abstract text available
    Text: N ANER PHILIPS/DISCRETE D E V E L O P M E N T DATA □bE D • bbS3T31 0015147 b ■ PZ2327B15U This data sheet contains advance information and specifications are subject to change without notice. T-c 3 % - Q I MICROWAVE POW ER TRANSISTOR NPN silicon epitaxial microwave power transistor, intended for use in a common-base, class-C broad­


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    PDF bbS3T31 PZ2327B15U bb53131 bfci53T31 7Z2412$ D01S1S5

    byv26c ph

    Abstract: philips diode PH 15
    Text: N AUER PHILIPS/DISCRETE 1,^53131 QDS7Q2b SbT • APX b^E » Philips Semiconductors Preliminary specification Very fast soft-recovery avalanche rectifier diodes FEATURES • Non-snap-off soft- recovery switching characteristics • Capability of absorbing reverse


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    PDF BYV26 BYV26A BYV26C BYV26D BYV26B BYV26E byv26c ph philips diode PH 15

    2n4416 transistor spice

    Abstract: 2n4416 transistor 2N4416 2N4416A 2N4416 equivalent MRC167 Transistor 2N4416A uhf vhf spice
    Text: • ^53=131 OOEmCH b'n HIAPX P h ilip s S e m icon d u ctors 1 P rodu ct sp ecification N AUER PHILIPS/DISCRETE b7E N-channel field-effect transistor 2N4416; 2N4416A Q UICK R E F E R E N C E DATA FEATURES • Low noise SYM BOL • Interchangeability of drain and


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    PDF bb53131 2N4416; 2N4416A 2N4416 2n4416 transistor spice 2n4416 transistor 2N4416 2N4416A 2N4416 equivalent MRC167 Transistor 2N4416A uhf vhf spice

    1117 S Transistor

    Abstract: sot122f
    Text: N AUER PH I L I PS /D IS CR ETE b'îE D • ^53131 002^722 07M H A P X Philips Sem iconductors Product_gpgcitication BLY91C/01 VHF power transistor PIN CONFIGURATION DESCRIPTION NPN silicon planar epitaxial transistor designed for use in class-A, B and C operated mobile,


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    PDF BLY91C/01 OT122F OT122F_ 1117 S Transistor sot122f

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE tab53T31 OOSDESO S • BSE D BUK426-200A BUK426-200B PowerMOS transistor T - 3 7- I/ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full pack envelope. The device is intended for use in Switched Mode Power Supplies


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    PDF tab53T31 BUK426-200A BUK426-200B BUK426 -200A -200B bbS3T31 T-39-V1

    Untitled

    Abstract: No abstract text available
    Text: Philips Components Datasheet status Product specification date of issue April 1991 B D S201/203/77 NPN silicon epitaxial base power transistors DESCRIPTION PINNING-SOT223 PIN NPN silicon epitaxial base transistors DESCRIPTION in a miniature SMD envelope 1


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    PDF S201/203/77 PINNING-SOT223 OT223) BDS202/204/78. BDS201/203/77 bfci53T31 OT223.

    BYX38-300

    Abstract: BYX38 BYX38-300R
    Text: IT N AMER PHILIPS/DISCRETE 2SE D H hhS3T31 D22fiOcl b • BYX38 SERIES ' 7= 01-/7 SILICON RECTIFIER DIODES Silicon rec tifie r diodes in D O -4 m etal envelopes, intended fo r use in po w er re c tifie r ap plicatio ns. Th e series consists o f the fo llo w in g types:


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    PDF BYX38 BYX38-300 BYX38-300R 1200R. 10-32UNF BYX38 bbS3T31

    Untitled

    Abstract: No abstract text available
    Text: • bbSB^Bl 002H5CH 212 « A P X N AMER PHILIPS/DISCRETE b?E » - BCF70 J V SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors, in a microminiature plastic envelope, intended for low level, low noise applications in thick and thin-film circuits. Q U IC K R E F E R E N C E D A T A


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    PDF 002H5CH BCF70 bfci53T31 0DEM51E

    transistor 338

    Abstract: BD333 BD337 BD332 BD331 BD336 458J IEC134 IR 334 about38
    Text: J BD332; 334 BD336; 338 ^ SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications; plastic SOT-82 envelope for clip mounting; can also be soldered


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    PDF BD332; BD336; OT-82 BD331, BD333, BD335and BD337. BD332 March-1981 0G34371 transistor 338 BD333 BD337 BD331 BD336 458J IEC134 IR 334 about38