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    BFP420 S11 Search Results

    BFP420 S11 Datasheets Context Search

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    BFP420 application notes 900MHz

    Abstract: BFP420 BFP420 application note rf amplifier siemens 10 ghz aplication note BCR400
    Contextual Info: Application Note No. 018 Discrete & RF Semiconductors G. Lohninger A Low-Noise-Amplifier at 900 MHz using SIEGET BFP420 This application note describes a low noise amplifier at 900MHz using SIEMENS SIEGET®25 BFP420. The design emphasis has been on achieving a


    Original     		BFP420 900MHz BFP420. 10dBm 100pF BFP420 application notes 900MHz BFP420 BFP420 application note rf amplifier siemens 10 ghz aplication note BCR400 PDF

    BCR400

    Abstract: BFP420 BFP420 application note SIEMENS BFP420
    Contextual Info: Application Note No. 017 Discrete & RF Semiconductors G. Lohninger A Low-Noise-Amplifier with good IP3outperformance at 1.9 GHz using BFP420 This application note describes a low noise amplifier at 1.9GHz using SIEMENS SIEGET25 BFP420. The design emphasis has been on achieving high output


    Original     		BFP420 BFP420. 23dBm 100pF BCR400 BFP420 BFP420 application note SIEMENS BFP420 PDF

    C547* transistor

    Abstract: BFP420 R3150 A04 RF amplifier RF TRANSISTOR BFP420 application note SIEMENS BFP420 BCR400W SOT343 C5
    Contextual Info: Application Note No. 015 Discrete & RF Semiconductors K. Brenndörfer Low-Noise-Amplifier optimised for minimum Noise Figure at 1.9 GHz using BFP420 This application note provides general information, print layout and list of used components, circuit layout and measured data of a low noise amplifier at


    Original     		BFP420 BFP420. 10dBm C547* transistor BFP420 R3150 A04 RF amplifier RF TRANSISTOR BFP420 application note SIEMENS BFP420 BCR400W SOT343 C5 PDF

    C547* transistor

    Abstract: BFP420 application note transistor C4 016 RF TRANSISTOR BCR400W SOT343 C5 C547u BFP420 C322pF transistor bfp420
    Contextual Info: Application Note No. 016 Discrete & RF Semiconductors K. Brenndörfer Low-Noise-Amplifier optimized for input and output return loss at 1.9 GHz using BFP420 This application note provides general information, print layout and list of used components, circuit layout and measured data of a low noise amplifier at


    Original     		BFP420 BFP420. C547* transistor BFP420 application note transistor C4 016 RF TRANSISTOR BCR400W SOT343 C5 C547u BFP420 C322pF transistor bfp420 PDF

    AMS 3630

    Abstract: a06 transistor Q62702-F1591 ff 0401 transistor A06 marking A06 BFP420 A06 Code "A06" RF Semiconductor BFP420 application notes BFP420
    Contextual Info: SIEGET 25 BFP420 NPN Silicon RF Transistor l For High Gain Low Noise Amplifiers l For Oscillators up to 10 GHz l Noise Figure F = 1.05 dB at 1.8 GHz Outstanding G = 20 dB at 1.8 GHz l Transition Frequency f = 25 GHz l Gold metalization for high reliability


    Original     		BFP420 25-Line OT343 Q62702-F1591 AMS 3630 a06 transistor Q62702-F1591 ff 0401 transistor A06 marking A06 BFP420 A06 Code "A06" RF Semiconductor BFP420 application notes BFP420 PDF

    BFP420

    Abstract: AN017 BCR400W BFP420 application note
    Contextual Info: A pp li c a t i o n N o t e , R e v . 2 . 0 , O c t . 2 00 6 A p p li c a t i o n N o t e N o . 0 1 7 A Lo w - N o i s e - A m p l i f i e r w i t h g o o d I P 3o u t p e r fo r m a n c e a t 1 . 9 G H z u s i n g B F P 42 0 R F & P r o t e c ti o n D e v i c e s


    Original     		BFP420 BFP420 AN017 BCR400W BFP420 application note PDF

    BFP420

    Abstract: BFP420 application note BFP420 application notes AN018 BCR400 bfp420 s11
    Contextual Info: A pp li c a t i o n N o t e , R e v . 2 . 0 , O c t . 2 00 6 A p p li c a t i o n N o t e N o . 0 1 8 A L ow - N o i s e - A m pl i f i e r a t 9 0 0 M H z u s i n g S I E G E T B FP 4 20 R F & P r o t e c ti o n D e v i c e s Edition 2006-10-27 Published by


    Original     		BFP420 BFP420 BFP420 application note BFP420 application notes AN018 BCR400 bfp420 s11 PDF

    C547* transistor

    Abstract: BCR400W BFP420
    Contextual Info: A pp li c at i on N ot e , R ev . 2. 0 , N ov . 2 00 6 A p p li c a t i o n N o t e N o . 0 1 6 L o w - N o i s e- A m p l i f i e r o p t i m i z e d f o r i n p ut a n d o u t p u t r e tu r n l os s a t 1 .9 G H z u s i n g B F P 4 2 0 R F & P r o t e c ti o n D e v i c e s


    Original     		OT343 BCR400W, C547* transistor BCR400W BFP420 PDF

    AN015

    Abstract: BCR400W BFP420
    Contextual Info: A pp li c at i on N ot e , R ev . 2. 0 , N ov . 2 00 6 A p p li c a t i o n N o t e N o . 0 1 5 L o w - N o i s e- A m p l i f i e r o p t i m i s e d fo r m i n i m u m N o i s e F i g u r e a t 1 . 9 G H z u s i ng B F P 42 0 R F & P r o t e c ti o n D e v i c e s


    Original     		OT343 BCR400W, AN015 BCR400W BFP420 PDF

    gsm vco

    Abstract: bfr93aw schematic gsm 900 amplifier k 3531 transistor
    Contextual Info: CGY 98 GSM/PCN Dual Band Power Amplifier 1 Schematic of the CGY 98 PA Application 1.1 Application Board V1.2 Application Note No. 053 Two independent amplifier chains are implemented on the dual band amplifier board V1.2. Each one uses a BFP 420 SIEGET transistor for first-stage amplification, and the


    Original     		EHT09097 EHT09123 EHT09124 gsm vco bfr93aw schematic gsm 900 amplifier k 3531 transistor PDF

    1R Transistor

    Abstract: Toko 10mm drop bgb420 application note AN068 BFP540
    Contextual Info: $SSOLFDWLRQ 1RWH 1R  6LOLFRQ 'LVFUHWHV :LGH %DQG $PSOLILHUV IRU WKH  *+] WR  *+] UHTXHQF\ 5DQJH XVLQJ %*% DQG %*% )HDWXUHV 3 ‡ &XUUHQW HDVLO\ DGMXVWDEOH E\ RQO\ RQH H[WHUQDO UHVLVWRU ‡ 7HPSHUDWXUH VWDELOL]HG ELDV SRLQW ‡ 1R YROWDJH GURS DW WKH FROOHFWRU GXH


    Original     		800/900MHz, GSM900, DCS1800, AN068 1R Transistor Toko 10mm drop bgb420 application note AN068 BFP540 PDF

    GSM vco

    Abstract: gsm 900 amplifier BFP420 Transistor BFR 98 BAS40-04 BFR93AW LQG21N Dual Band Power Amplifier 1 Schematic of the CGY K 3264 transistor IC210
    Contextual Info: CGY 98 GSM/PCN Dual Band Power Amplifier 1 Schematic of the CGY 98 PA Application 1.1 Application Board V1.2 Application Note No. 053 Two independent amplifier chains are implemented on the dual band amplifier board V1.2. Each one uses a BFP 420 SIEGET transistor for first-stage amplification, and the


    Original     		EHT09097 EHT09123 EHT09124 GSM vco gsm 900 amplifier BFP420 Transistor BFR 98 BAS40-04 BFR93AW LQG21N Dual Band Power Amplifier 1 Schematic of the CGY K 3264 transistor IC210 PDF

    BGB420

    Contextual Info: Preliminary BGB420 Active Biased Transistor BGB420 Features • For high gain low noise amplifiers • Ideal for wideband applications, cellular telephones, cordless telephones, SATTV and high frequency oscillators • Gma=17.5dB at 1.8GHz • Small SOT-343 package


    Original     		BGB420 BGB420 OT-343 BFP420. GPS05605 PDF

    cdma Booster schematic

    Abstract: uwb transceiver BGH182M ESDOP8RFL bridge 45 b 50 20 c1v TRANSISTOR SMD CODE PACKAGE SOT89 52 10A DVB-T Schematic set top box BF776 DVB-t receiver schematic diagram microstrip Antenna 5.8ghz
    Contextual Info: May 2007 Product & Application Guide 2007 Small Signal Discretes www.infineon.com/smallsignaldiscretes Table of Contents Applications Mobile Communication ……………. Consumer …………………………………. Automotive & Industrial.………….


    Original     		B132-H9014-X-X-7600 NB07-1094 cdma Booster schematic uwb transceiver BGH182M ESDOP8RFL bridge 45 b 50 20 c1v TRANSISTOR SMD CODE PACKAGE SOT89 52 10A DVB-T Schematic set top box BF776 DVB-t receiver schematic diagram microstrip Antenna 5.8ghz PDF

    BR 8050

    Abstract: BFP420 application notes SOT343 marking 0 mmic t502 6 CHIP T502 P 414 rf transistor s-parameter RF POWER TRANSISTOR NPN BR 8050 D CHIP T502 S BGB420
    Contextual Info: BGB420, Aug. 2001 BGB 420 Active Biased Transistor MMIC W ir e le ss S i l ic o n D is c r e t e s N e v e r s t o p t h i n k i n g . Edition 2001-08-10 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München Infineon Technologies AG 2001


    Original     		BGB420, D-81541 BGB420 BGB420 BFP420. GPS05605 BR 8050 BFP420 application notes SOT343 marking 0 mmic t502 6 CHIP T502 P 414 rf transistor s-parameter RF POWER TRANSISTOR NPN BR 8050 D CHIP T502 S PDF

    CHIP T502 S

    Abstract: JS 08321 BR 8050 CHIP T502 P BFP420 BGB420 GPS05605 T502 RF Transistor s-parameter s-parameter RF POWER TRANSISTOR NPN
    Contextual Info: BGB420, Aug. 2001 BGB 420 Active Biased Transistor MMIC W ir e le ss S i l ic o n D is c r e t e s N e v e r s t o p t h i n k i n g . Edition 2001-08-10 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München Infineon Technologies AG 2001


    Original     		BGB420, D-81541 BGB420 BGB420 BFP420. GPS05605 CHIP T502 S JS 08321 BR 8050 CHIP T502 P BFP420 GPS05605 T502 RF Transistor s-parameter s-parameter RF POWER TRANSISTOR NPN PDF

    HD155121F

    Abstract: Common PCN Handset Specification Phase 74674 GSM LNA BFP420 GSM ic gsm transceiver transceiver gsm MA 68698 pcn 8.5
    Contextual Info: HD155121F RF Transceiver IC for GSM and PCN Dual band cellular systems ADE-207-265A Z 2nd Edition May 1999 Description The HD155121F is a RF transceiver IC for GSM and PCN dual band cellular systems, and integrates most of the low power silicon functions of a transceiver. The HD155121F incorporates two bias circuits for RF


    Original     		HD155121F ADE-207-265A HD155121F 48-pin Common PCN Handset Specification Phase 74674 GSM LNA BFP420 GSM ic gsm transceiver transceiver gsm MA 68698 pcn 8.5 PDF

    Hitachi DSA002743

    Abstract: Nippon capacitors
    Contextual Info: HD155121F RF Transceiver IC for GSM and PCN Dual band cellular systems ADE-207-265 Z) 1st Edition November 1998 Description The HD155121F is a RF transceiver IC for GSM and PCN dual band cellular systems, and integrates most of the low power silicon functions of a transceiver. The HD155121F incorporates two bias circuits for RF


    Original     		HD155121F ADE-207-265 HD155121F 48-pin Hitachi DSA002743 Nippon capacitors PDF

    MQE9

    Abstract: 74674 HITEC 623 Hitachi DSA002752 GSM53 Nippon capacitors
    Contextual Info: HD155121F RF Transceiver IC for GSM and PCN Dual band cellular systems ADE-207-265A Z 2nd Edition May 1999 Description The HD155121F is a RF transceiver IC for GSM and PCN dual band cellular systems, and integrates most of the low power silicon functions of a transceiver. The HD155121F incorporates two bias circuits for RF


    Original     		HD155121F ADE-207-265A HD155121F 48-pin MQE9 74674 HITEC 623 Hitachi DSA002752 GSM53 Nippon capacitors PDF

    2sc3052ef

    Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor
    Contextual Info: Small Signal Discretes Selection Guide [ www.infineon.com/smallsignaldiscretes ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 Schottky Diodes 18 ESD and EMI Protection Devices and Filters


    Original     		24GHz BF517 B132-H8248-G5-X-7600 2sc3052ef 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor PDF

    gsm mobile jammer

    Abstract: Passive GPS ceramic patch antenna SIEMENS saw filter jammer gsm SIEMENS saw filter f2 advantages of mobile signal jammer circuit mobile jammer circuit design gsm SIEMENS epcos Gps circuit diagram interfacing gps gsm
    Contextual Info: Application Note SAW-Components GPS low noise front-end amplifier with SAW filter B3520 App. Note #16 GPS is rapidly growing in Automotive and in consumer market as well. GPS navigation for cars and motor trucks becomes more and more standard. A GPS frontend, consisting of an amplifier - filter combination is discussed. System comparison


    Original     		B3520 D-81617 gsm mobile jammer Passive GPS ceramic patch antenna SIEMENS saw filter jammer gsm SIEMENS saw filter f2 advantages of mobile signal jammer circuit mobile jammer circuit design gsm SIEMENS epcos Gps circuit diagram interfacing gps gsm PDF

    diode S6 78A

    Abstract: TRANSISTOR PNP BA RT SOT 89 mmic CEA SOT363 32N45 transistor 6bw TRANSISTOR BC 545 BF1012S 6bw sot-23 up 6103 s8 6bw 12 transistor
    Contextual Info: SIEM EN S Selection Guide RF-Transistors and MMICs MOS Field-Effect Dual-Gate GaAs FETs. 14


    OCR Scan     		O-92tl O-92d diode S6 78A TRANSISTOR PNP BA RT SOT 89 mmic CEA SOT363 32N45 transistor 6bw TRANSISTOR BC 545 BF1012S 6bw sot-23 up 6103 s8 6bw 12 transistor PDF

    Avago 9886

    Abstract: XFRV NE3210 FR4 substrate height and thickness rogers fll120 SKD-ONS-ST23-001 BFP949 Rohm Diodes
    Contextual Info: M O DE L I T HI CS EXEMPLAR LIBRARY LIBRARY USER MANUAL V11 For Agilent Technologies Advanced Design System MODELITHICS EXEMPLAR LIBRARY CONTENTS CONTENTS . 2 INSTALLATION INSTRUCTIONS . 8


    Original     		com/peixun/antenna/116 //shop36920890 Avago 9886 XFRV NE3210 FR4 substrate height and thickness rogers fll120 SKD-ONS-ST23-001 BFP949 Rohm Diodes PDF

    2SK163

    Abstract: BB142 BF245c SMD BF245A spice ON4831-2 BB184LX BF1109 spice bf998 2SK508 BFG480W
    Contextual Info: RF!๮֩!‫ڼ‬7Ӳ RFׂ೗‫ڦ‬ᆌᆩࢅยऺ๮֩ 2005౎11ሆ ݀քන೺;!!2005౎11ሆ! ࿔ॲຩႾࡽǖ!9397 750 15371 Henk Roelofs-!ޭጺ֋!&!ጺঢ়૙!RFׂ೗ Ⴞჾ ࣌ᆓ۩ለ‫ڼ‬7ӲRF๮֩ă࿢்ඓ႑Ljएᇀᆌᆩ႑တ‫ڦ‬ඇ঍ࢻ๕֡ፕႎঋ‫ࣷॽۅ‬๑౞इᅮ‫ݩ‬റLj࿢்‫ڦ‬


    Original     		TZA30x6 2SK163 BB142 BF245c SMD BF245A spice ON4831-2 BB184LX BF1109 spice bf998 2SK508 BFG480W PDF