BFQ 325 Search Results

Contextual Info: SIEMENS BFQ 81 NPN Silicon RF Transistor • For low-noise amplifiers up to 2GHz and broadband analog and digital applications in telecommunications systems at collector currents from 0.5 mA to 20 mA. ESP: Electrostatic discharge sensitive device, observe handling precaution!

BFQ 325

Abstract: bfq 85 marking GMA BFQ 58
Contextual Info: BFQ 81 NPN Silicon RF Transistor • For low-noise amplifiers up to 2GHz and broadband analog and digital applications in telecommunications systems at collector currents from 0.5 mA to 20 mA. ESD: Electrostatic discharge sensitive device, observe handling precaution!

ZS 633

Abstract: ZS 1052 AC cerec BFQ645 617 300 MARKING 7C
Contextual Info: SIEM EN S NPN Silicon RF Transistor BFQ 645 Preliminary Data • For low-noise, high-gain amplifiers and medium power oscillators at collector currents up to 20 mA. • fr = 9 GHz F = 1 .9 d B a t2 G H z ESD: Electrostatic discharge sensitive device, observe handling precautions!

TRANSISTOR 131-6 BJ 946

Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Contextual Info: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise

BFT65

Abstract: D1279 Siemens 1414 D1275 germanium Germanium drift transistor diode a811 Siemens Halbleiter germanium transistor legiert
Contextual Info: Table of Contents Selection Guide Ordering Codes Inhaltsverzeichnis Typeniibersicht Bestellnummern Scope of Applications Technical Information Quality Specifications Einsatzhinweise Technische Angaben Qualitatsangaben Package Outlines Mounting Instructions

RPY 86

Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
Contextual Info: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ­

LDR 03

Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
Contextual Info: Halbleiter­ bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren

bfq81

Abstract: ki12
Contextual Info: SIEMENS BFQ81 NPN Silicon RF Transistor • For low-noise amplifiers up to 2GHz and broadband analog and digital applications in telecommunications systems at collector currents from 0.5 mA to 20 mA. 1=B h Q62702-F1049 O RAs CO BFQ81 ro il m ESP: Electrostatic discharge sensitive device, observe handling precaution!

bc109 equivalent

Abstract: BC107 equivalent transistors EQUIVALENT TRANSISTOR bc108 bc108 equivalent BC177 equivalent BC107 equivalent BC178 equivalent equivalent of BC178 2n3963 equivalent transistor equivalent bc108
Contextual Info: Metal Can Metal Can Product Variations Low Level General Purpose Am plifiers TO-5, TO-39 and TO-18 can be supplied with several variations from standard. D evice Type Lead Length The standard lead length is 12,7mm 0,5in . Certain types are available with longer leads— 38,1mm (1,5in) at a small extra

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

2907A PNP bipolar transistors

Abstract: BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 450 pnp diode S6 78A transistors bf 517 BFG sot89 BC 327 SOT 23 BAS20 SOT23 DIODE TA 70/04 bcp 846
Contextual Info: Selection Guide RF-Transistors and MMICs MOS Field-Effect Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

OT239

Abstract: BT100a 02 CQX82A TRIO TA 80W CV7351 ZP1481 CV2154 ZP1430 triac mw 151 500r PL5727
Contextual Info: Milliard quick reference guide 1978/79 — discrete semiconductors — passive components — valves and tubes This guide gives quick reference data on Mullard electronic components. The information is deliberately abbreviated to give a rapid appreciation of salient characteristics, and to

tda 6109

Abstract: V23100-V7228-F110 B32650 V23100-V7213-F104 V23100-W1224-A104 V23082-A1005-A401 V23108-A1003-B101 V23104-A1003-B101 V23100-V7228-F104 B32110-F
Contextual Info: Katalognummern-Referenz: SCHURICHT-Nummern ⇔ SIEMENS-Nummern Da im Katalog aus drucktechnischen Gründen die Siemensnummern oft nicht zusammenhängend – sondern in Produktgruppen- und Einzelexemplar-Teil aufgetrennt – dargestellt sind, finden Sie hier in einer großen Tabelle für jedes Bauteil die SCHURICHT- und die SIEMENS-Nummern

2907A PNP bipolar transistors

Abstract: diode S6 78A MMIC SOT 363 s1140 DIODE TA 70/04 2907A PNP bipolar transistors datasheet Diode BAW 62 TRANSISTOR BC 158 baw 92 68W SOT
Contextual Info: Selection Guide Table of Contents Page RF-Transistors and MMICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 MOS Field-Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

PAL 007 A

Abstract: carbon composition resistors BFN 15 PAL 007 B SLMA002 SLMA004 THS3202 THS4211 THS4211DRB THS4215
Contextual Info: DGN-8 www.ti.com DGK-8 D-8 THS4211 THS4215 DRB-8 SLOS400C − SEPTEMBER 2002 − REVISED JANUARY 2004 LOWĆDISTORTION, HIGHĆSPEED, VOLTAGE FEEDBACK AMPLIFIER FEATURES D Unity Gain Stability D Wide Bandwidth: 1 GHz D High Slew Rate: 970 V/µs D Low Distortion

hep 154 silicon diode

Abstract: 437 BGY of hep 154 silicon diode XR BU 3150 MP 9720 ds BFQ 540 application marking code HFr P6KE10A HY 1.5ke series add 5201
Contextual Info: World Products Inc. 19654 8th St. East, Sonoma, CA, USA, 95476 . . Phone: 707 996-5201 . . Fax: (707) 996-3380 Transient Voltage Suppression Diodes The Protection Products Group of World Products Inc. is committed to providing the optimum products for your

THS4211DRB

Abstract: THS4215 THS4271 THS4503 SLMA002 SLMA004 THS3202 THS4211 NG19
Contextual Info: DGN-8 www.ti.com DGK-8 D-8 THS4211 THS4215 DRB-8 SLOS400C − SEPTEMBER 2002 − REVISED JANUARY 2004 LOWĆDISTORTION, HIGHĆSPEED, VOLTAGE FEEDBACK AMPLIFIER FEATURES D Unity Gain Stability D Wide Bandwidth: 1 GHz D High Slew Rate: 970 V/µs D Low Distortion

Contextual Info: THS4211 THS4215 www.ti.com SLOS400A – SEPTEMBER 2002 – REVISED OCTOBER 2002 LOW-DISTORTION HIGH-SPEED VOLTAGE FEEDBACK AMPLIFIER FEATURES D Unity Gain Stability D Wide Bandwidth: 1 GHz D High Slew Rate: 970 V/µs D Low Distortion APPLICATIONS D High Linearity ADC Preamplifier

PAL 008

Abstract: THS4211DGN MSOP-8 SLMA002 SLMA004 THS3202 THS4211 THS4211D THS4215 THS4271 THS4503
Contextual Info: THS4211 THS4215 www.ti.com SLOS400A – SEPTEMBER 2002 – REVISED OCTOBER 2002 LOW-DISTORTION HIGH-SPEED VOLTAGE FEEDBACK AMPLIFIER FEATURES D Unity Gain Stability D Wide Bandwidth: 1 GHz D High Slew Rate: 970 V/µs D Low Distortion APPLICATIONS D High Linearity ADC Preamplifier

Contextual Info: DGN-8 DGK-8 D-8 www.ti.com THS4211 THS4215 DRB-8 SLOS400D – SEPTEMBER 2002 – REVISED NOVEMBER 2004 LOW-DISTORTION, HIGH-SPEED, VOLTAGE FEEDBACK AMPLIFIER FEATURES • • • • • • • • • DESCRIPTION Unity Gain Stability Wide Bandwidth: 1 GHz

Contextual Info: DGN-8 DGK-8 D-8 www.ti.com THS4211 THS4215 DRB-8 SLOS400D – SEPTEMBER 2002 – REVISED NOVEMBER 2004 LOW-DISTORTION, HIGH-SPEED, VOLTAGE FEEDBACK AMPLIFIER FEATURES • • • • • • • • • DESCRIPTION Unity Gain Stability Wide Bandwidth: 1 GHz

Contextual Info: DGN-8 DGK-8 D-8 www.ti.com THS4211 THS4215 DRB-8 SLOS400D – SEPTEMBER 2002 – REVISED NOVEMBER 2004 LOW-DISTORTION, HIGH-SPEED, VOLTAGE FEEDBACK AMPLIFIER FEATURES • • • • • • • • • DESCRIPTION Unity Gain Stability Wide Bandwidth: 1 GHz