BFQ81 Search Results

MARKING ra

Abstract: LT 612 1054 transistor DAG marking dag transistor MAR 819 ci 7436 7334 marking MAR 601 transistor
Contextual Info: Temic BFQ81 Semiconductors Silicon NPN Planer RF Transistor Applications RF amplifier up to 2 GHz, especially for mobile telephone. Features • Small feedback capacitance • L ow n o ise figure • Low cross modulation Marking: RA Plastic case SOT 23 1 = Collector; 2 = Base; 3 = Emitter

temic 0675

Abstract: 7334
Contextual Info: Tem ic BFQ81 Semiconductors Silicon NPN Planer RF Transistor Applications Electrostatic sensitive device. Observe precautions for handling. M RF amplifier up to 2 GHz, especially for mobile telephone. Features • Small feedback capacitance • Low noise figure

A1309

Contextual Info: BFQ81 Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to 2 GHz, especially for mobile telephone. Features D Small feedback capacitance D Low noise figure D Low cross modulation

Contextual Info: BFQ81 VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Features 1 • Small feedback capacitance • Low noise figure • Low cross modulation 2 3 18991 Applications RF amplifier up to 2 GHz, especially for mobile telephone. Electrostatic sensitive device.

Contextual Info: BFQ81 Vishay Semiconductors Silicon NPN Planar RF Transistor Features • • • • • 1 Small feedback capacitance Low noise figure e3 Low cross modulation Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 2 3 18991

BFQ81

Contextual Info: BFQ81 Silicon NPN Planer RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to 2 GHz, especially for mobile telephone. Features D Small feedback capacitance D Low noise figure D Low cross modulation

bfq81

Abstract: ki12
Contextual Info: SIEMENS BFQ81 NPN Silicon RF Transistor • For low-noise amplifiers up to 2GHz and broadband analog and digital applications in telecommunications systems at collector currents from 0.5 mA to 20 mA. 1=B h Q62702-F1049 O RAs CO BFQ81 ro il m ESP: Electrostatic discharge sensitive device, observe handling precaution!

BFQ81

Contextual Info: BFQ81 Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to 2 GHz, especially for mobile telephone. Features D Small feedback capacitance D Low noise figure D Low cross modulation

0482 transistor

Abstract: transistor 0882 7334
Contextual Info: BFQ81 VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Features 1 • Small feedback capacitance • Low noise figure • Low cross modulation 2 3 18991 Applications RF amplifier up to 2 GHz, especially for mobile telephone. Electrostatic sensitive device.

Contextual Info: Not for new design, this product will be obsoleted soon BFQ81 Vishay Semiconductors Silicon NPN Planar RF Transistor Features • • • • • 1 Small feedback capacitance Low noise figure e3 Low cross modulation Lead Pb -free component Component in accordance to RoHS 2002/95/EC

BFQ81

Abstract: telefunken 1007
Contextual Info: BFQ81 Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to 2 GHz, especially for mobile telephone. Features D Small feedback capacitance D Low noise figure D Low cross modulation

TRANSISTOR bu 406

Contextual Info: ViSH A Y _ BFQ81 _ ▼ Vishay Telefunken Silicon NPN Planar RF Transistor E lectrostatic sensitive device. O bserve precautions fo r handling. ^ M Applications RF a m plifier up to 2 GHz, especially fo r m obile telephone.

temic 0675

Abstract: telefunken ra 100 BFQ81
Contextual Info: BFQ81 Silicon NPN Planer RF Transistor Applications RF amplifier up to 2 GHz, especially for mobile telephone. Features D Small feedback capacitance D Low noise figure D Low cross modulation 1 2 3 94 9280 Marking: RA Plastic case SOT 23 1 = Collector; 2 = Base; 3 = Emitter

BFQ81

Abstract: BFQ81-GS08 sot-23 marking code 352
Contextual Info: BFQ81 Vishay Semiconductors Silicon NPN Planar RF Transistor Features • • • • • 1 Small feedback capacitance Low noise figure e3 Low cross modulation Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 2 3 18991

BDP 284

Abstract: BAV 217 Q62702-C2259 BAT 545 Q62702F1240 Q62702-A773 bdp 497 Q62702-C944 Q62702-D339 Q62702-C1529
Contextual Info: SIEMENS List of Types in Alphanumerical Order Type Ordering Code Page BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-01 BAR 15-01 BAR 16-01 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04 BAR 64-05

S852T

Abstract: BF579 T0-50 BF964S BF96 BFP183T
Contextual Info: Tem ic Semiconduct ors Selector Guide Dual-Gate Si-MOSFETs N-Channel Depletion Mode Number BF961 BF964S BF966S BF988 BF994S BF995 BF996S BF998 S525T S888T VD5 V 20 20 20 12 20 20 20 12 20 10 lümax mA 30 30 30 30 30 30 30 30 30 20 Iy2isl at Ids mA mS 15

s525

Abstract: s918 BF988 bfr96ts S858TA3 BF-970 BFP183T
Contextual Info: Tem ic Semiconductors General Information Alphanumeric Index Type. T ype . Type. Type . BFR90A 9, 243 S593T 8, 105 BFR91 9, 250 S594T 8, 112 9, 163 BFR91A . . . . 9, 256 S595T 8, 119 BFP81 9, 173 BFR92 S822T 9, 338 8. 52

BFQ58

Abstract: BFQ57 BFT99 RF Bipolar Transistors BFT97 BFP194 BF840 BFT65 BFR34A BF450
Contextual Info: Microwave, RF & Tuner Transistors For complete package outlines, refer to pages PO-1 through PO-6 RF Bipolar Transistors N=NPN P=PNP BF199 BF240 BF241 BF254 BF255 BF414 BF450 BF451 BF506 BF606A BF763 BF959 BF970 BFQ57 BFQ58 BFQ69 BFQ70 BFQ71 BFQ72 BFQ73 BFQ73S

2SC3355 SPICE MODEL

Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
Contextual Info: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness

BF963

Abstract: 1N4004 SOD-123 BC547 smd BB409 2n2907 smd BAT16-046 1N4148 2N2907 SOT-23 1N4148 SOD-123 2n2222 smd
Contextual Info: Cross Reference Leaded Devices SMD-Packages SOD-123 1N4001 1N4002 1N4003 1N4004 1N4001 2x 1N4002 (2x) 1N4003 (2x) 1N4004 (2x) 1N4148 1N4148 (2x) SOD-323 SCD-80 SOT-23 SOT-323 SOT-343 SOT-363 SCT-595 BAW 78 M BAS 16-02W BAS 16-03W BAS16 BAL/BAR74 BAL/BAR99

Contextual Info: 35E D • 823b32Q QGlb'ìbS T « S I P NPN Silicon RF Transistor BFQ 81 SIEMENS/ SPCLi SEMICONDS _ • For low-noise amplifiers up to 2 GHz and broadband analog and digital applications in telecommunications systems at collector currents from 0.5 to 20 mA.

smd code book

Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
Contextual Info: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ

diode S6 78A

Abstract: TRANSISTOR PNP BA RT SOT 89 mmic CEA SOT363 32N45 transistor 6bw TRANSISTOR BC 545 BF1012S 6bw sot-23 up 6103 s8 6bw 12 transistor
Contextual Info: SIEM EN S Selection Guide RF-Transistors and MMICs MOS Field-Effect Dual-Gate GaAs FETs. 14

BFT65

Abstract: D1279 Siemens 1414 D1275 germanium Germanium drift transistor diode a811 Siemens Halbleiter germanium transistor legiert
Contextual Info: Table of Contents Selection Guide Ordering Codes Inhaltsverzeichnis Typeniibersicht Bestellnummern Scope of Applications Technical Information Quality Specifications Einsatzhinweise Technische Angaben Qualitatsangaben Package Outlines Mounting Instructions