BFR 36.2 Search Results

sot-23 Transistor MARKING CODE ZG

Abstract: ZG SOT23 transistor marking zg
Contextual Info: SIEMENS BFR 280 NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • = 7.5GHz F = 1.5dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution!

BFR 965

Abstract: BFR 36.2 Transistor BFR sot 23 transistor 70.2 Q62702-F1315 sot-23 marking code 352 0482 transistor 0166 415 04 1 060 bfr 705
Contextual Info: NPN Silicon RF Transistor BFR 182 Preliminary Data ● For low-noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. ● fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precautions!

Q62702-F1494

Contextual Info: BFR 280W NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • fT = 7.5GHz F = 1.5dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution!

MJE 280 power transistor

Abstract: Q62702-F1298 bfr280
Contextual Info: BFR 280 NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • fT = 7.5GHz F = 1.5dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: SIEMENS BFR 280 NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • fT = 7.5GHz F = 1.5dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution!

BFR91

Abstract: Transistor BFR 90 application transistor BFR91
Contextual Info: BFR 91 TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 3 2 1 BFR91 Marking Plastic case XTO 50

Transistor BFR 90 application

Abstract: BFR90A Transistor BFR 35 Transistor BFR 90 693 071 010 811
Contextual Info: BFR 90 A TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 3 2 1 BFR90A Marking Plastic case XTO 50

Contextual Info: SIEMENS BFR 280W NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • f j = 7.5GHz F = 1.5dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: SIEMENS BFR 280W NPN S ilicon RF T ransistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • *r = 7.5GHz F= 1.5dEJ at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution!

4934N

Contextual Info: NTMFS4934N Power MOSFET 30 V, 147 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

4934N

Abstract: NTMFS4934N 362 N MOSFET NTMFS4934NT1G
Contextual Info: NTMFS4934N Power MOSFET 30 V, 147 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

SO8F

Contextual Info: NTMFS4934N Power MOSFET 30 V, 147 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

VSO05561

Contextual Info: BFR 280W NPN Silicon RF Transistor 3
For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2 mA to 8 m
fT = 7.5 GHz 2 F = 1.5 dB at 900 MHz 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: BFR 280 NPN Silicon RF Transistor 3
For low noise, low-power amplifiers in mobile communications systems pager, cordless telephone at collector currents from 0.2 mA to 8 m
fT = 7.5 GHz 2 F = 1.5 dB at 900 MHz 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution!

4934N

Contextual Info: NTMFS4934N Power MOSFET 30 V, 147 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

lge 673

Abstract: TRANSISTOR cq 802
Contextual Info: BEE D • 053b3E0 □017Q3C] 0 H S I P NPN N Silicon RF Transistor SIEMENS/ SPCL-. SEMICONDS ^ ^ BFR 193 • For low-noise, high-gain amplifiers up to 2 GHz. • For linear broadband amplifiers. • fr = 8 GHz. F = 1.2 dB at 800 MHz. ESD : Electrostatic discharge sensitive device, observe handling precautions!

TRANSISTOR 131-6 BJ 946

Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Contextual Info: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise

BFT65

Abstract: D1279 Siemens 1414 D1275 germanium Germanium drift transistor diode a811 Siemens Halbleiter germanium transistor legiert
Contextual Info: Table of Contents Selection Guide Ordering Codes Inhaltsverzeichnis Typeniibersicht Bestellnummern Scope of Applications Technical Information Quality Specifications Einsatzhinweise Technische Angaben Qualitatsangaben Package Outlines Mounting Instructions

Contextual Info: Detailed Specifications & Technical Data ENGLISH MEASUREMENT VERSION 83350E Multi-Conductor - MIL-W-16878/4 Type E For more Information please call 1-800-Belden1 Description: 20 AWG stranded (19x32) silver-plated copper conductors, cabled and color-coded, extruded TFE Teflon

Contextual Info: Detailed Specifications & Technical Data METRIC MEASUREMENT VERSION 8916 Hook-up/Lead - UL AWM Style 1015 For more Information please call 1-800-Belden1 Description: 14 AWG stranded 41x30 tinned copper conductor, PVC insulation. Rated 105ºC, 600V. Rated 2500V

Contextual Info: Detailed Specifications & Technical Data METRIC MEASUREMENT VERSION 8451 Multi-Conductor - Single-Pair Cable For more Information please call 1-800-Belden1 Description: 22 AWG stranded 7x30 TC conductors, polypropylene insulation, paper wrap, twisted pair, overall Beldfoil

max 8770

Abstract: AWM Style 2093
Contextual Info: Detailed Specifications & Technical Data ENGLISH MEASUREMENT VERSION 8770 Multi-Conductor - Audio, Control and Instrumentation Cable For more Information please call 1-800-Belden1 Description: 18 AWG stranded 16x30 tinned copper conductors, conductors cabled, polyethylene insulation, overall

007500

Abstract: TAG+8916 Qualcomm,+MSM+8916
Contextual Info: Detailed Specifications & Technical Data METRIC MEASUREMENT VERSION 8916 Hook-up/Lead - UL AWM Style 1015 For more Information please call 1-800-Belden1 Description: 14 AWG stranded 41x30 tinned copper conductor, PVC insulation. Rated 105ºC, 600V. Rated 2500V

Contextual Info: Detailed Specifications & Technical Data METRIC MEASUREMENT VERSION 7939A Multi-Conductor - Category 5e DataTuff Twisted Pair Cable For more Information please call 1-800-Belden1 Description: 24 AWG stranded 7x32 bare copper conductors, bonded pairs, polyolefin insulation, polyester separator,