Contextual Info: SIEM ENS 16Mx 4-Bit Dynamic RAM 4k & 8k Refresh HYB 3164400J/T -50/-60 HYB 3165400J/T -50/-60 Preliminary Information • 16 777 216 words by 4-bit organization • 0 to 70 'C operating temperature • Fast access and cycle time RAS access time: 50 ns (-50 version)

Contextual Info: SIEMENS IS D N S u b s c rib e r A c c e s s C o n tro lle r fo r U pn-In te rfa c e T e rm in a ls S m a rtL in k -P PSB 2197 Preliminary Data 1 CMOS 1C Features • Cost/performance-optimized Upn-interface transceiver, compatible to PEB 2096 OCTAT-P and

siemens sab 82538

Abstract: 3tb siemens T-0657 SiEMENS PM 350 98 SAB 80188 QD70 SIEMENS ESCC8 1fa MARKING processor hbt 00 04 g Q67100-H6441
Contextual Info: SIEM ENS Enhanced Serial Communication Controller ESCC8 SAB 82538 SAF 82538 Preliminary Data 1 CMOS 1C General Features Serial Interface • Eight independent full duplex serial channels - On chip clock generation or external clock source - On chip DPLL for clock recovery of each

SIEMENS BST

Abstract: SIEMENS BST f 35 80 SIEMENS BST t SIEMENS BST h 35 SIEMENS BST N 45 b 110 SIEMENS BST H 45 90 SIEMENS BST h 05 90 SIEMENS BST f 05 90 BST60
Contextual Info: SIEMENS 1M X 16-Bit Dynamic RAM 1 k & 4k-Refresh HYB 3116160BSJ/BST(L)-50/-60/-70 HYB 3118160BSJ/BST(L)-50/-60/-70 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature • Performance: -50 -60 -70 50 60 70

Contextual Info: BUZ 173 Infineon technologies SIPMOS Power Transistor • P channel • Enhancement mode • Avalanche rated Type Vds to flDS on Package Ordering Code BUZ 173 -200 V -3.6 A 1.5 £2 TO-220 AB C67078-S1452-A2 Maximum Ratings Parameter Symbol Continuous drain current

Contextual Info: SIEMENS BFR 280 NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • fT = 7.5GHz F = 1.5dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: SIEMENS C166-Family of High-Performance CMOS 16-Bit Microcontrollers C163-L Data Sheet C163-L • • • • • • • • • • • • • • 16-Bit Microcontroller High Performance 16-bit CPU with 4-Stage Pipeline - 80 ns Instruction Cycle Time at 25 MHz CPU Clock

Contextual Info: BSO 307N I nf ine on technologies Preliminary Data SIPMOS Small-Signal-Transistor Product Summary Features Drain source voltage Vqs • Enhancement mode Drain-Source on-state resistance ffos on • Avalanche rated Continuous drain current b • Dual N channel

Contextual Info: SIEMENS BAT 14-099 Silicon Dual Schottky Diode • DBS mixer application to 12 GHz • Low noise figure • Medium barrier type ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel BAT 14-099

smd transistor cy 813

Abstract: TCA505A inductive proximity detector ic TCA505 B TCA505G gg3s
Contextual Info: 47E D SIEMENS • fl235b05 003S3fl5 4 ■ S I E 6 SIEMENS AKTIEN6ESELLSCHAF ^ ¿ 6 - 0 3 1C for Inductive Proximity Switches with Short-Circuit Protection TCA 505 Bipolar IC Preliminary Data Features • • • • • • • • • • Wide supply voltage of 31 to 4.5 V

Contextual Info: SIEMENS SIEGET 25 BFP 450 NPN Silicon RF Transistor • For medium power amplifiers • Compression point P.1dB = +19dB m at 1.8 GHz maximum available gain Gma = 14 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz • Transition frequency f j = 24 GHz • Gold metalization for high reliability

Contextual Info: SIEMENS BC 847PN NPN/PNP Silicon AF Transistor Array • For A F input stages and driver applivations • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated N P N /PN P Transistors in one package Tape loading orientation

Contextual Info: Infineon technologies FP 420 L 90 B Double Differential Magneto Resistor Version 2.0 Incl. lacquer-cover 1.6 pin connection Approx. weight 0.2 g D im ensions in mm Features Typical Applications Double differential magneto resistor on one carrier Accurate intercenter spacing

Contextual Info: SIEMENS SP 061OT SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • ^GS th = 0.-2.0V Type ^DS #D f lDS(on) Package Marking SP 061 OT -60 V -0.13 A io n SOT-23 sSF Type SP 061 OT Ordering Code Q67000-S088 Tape and Reel Information

siemens 4261

Contextual Info: SIEMENS 5-V Low-Drop Voltage Regulator TLE 4261 Bipolar IC Features • • • • • • • • • • • • • Very low-drop voltage Very low quiescent current Low starting-current consumption Proof against reverse polarity Input voltage up to 42 V

MARKING L31 SMD

Contextual Info: SIEMENS BAR 64-02W Silicon PIN Diode • High voltage current controlled RF resistor for RF attenuator and switches • Frequency range above 1 MHz • Low resistance and short carrier lifetime • Very low inductance • For frequencies up to 3 GHz • Extremely small plastic SMD package

TLE4215

Abstract: transistor k 4215 IEP00718
Contextual Info: fc.DE J> • fi23StiGS SIEMENS DüSOblE Ib l « S IE G SIEMENS AKTIENGESELLSCHAF Intelligent Double High-Side Switch 2 x 0.5 A TLE 4215 Features • Double high-side switch, 2 • Power limitation x 0.5 A • Overtemperature shutdown • Status monitoring

Siemens xl 532

Abstract: KCB02 SAB 529 83C166W-5M Siemens mt4 siemens multi channel timer 80C166W-MT3 Compare CISC and RISC gpr 163 80C166
Contextual Info: SIEMENS C16x-Family of SAB 80C166W/83C166W High-Performance CMOS 16-Bit Microcontrollers Preliminary SAB 80C166W / 83C166W • • • • • • • • • • • • • • • • • • • • • • • • • • • • 16-Bit Microcontroller

Contextual Info: SIEMENS 2M X 8-Bit Dynamic RAM 2k-Refresh HYB 311 7800BSJ L -50/-60/-70 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 "C operating temperature • Performance: -50 -60 -70 ¿RAC RAS access time 50 60 70 ns ^CAC CAS access time

Contextual Info: SIEMENS PNP Silicon High-Voltage Transistors BFN 37 BFN 39 • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: BFN 36, BFN 38 NPN Type