BFR840L3RHESD Search Results
BFR840L3RHESD Price and Stock
Infineon Technologies AG BFR840L3RHESDE6327XTSA1RF TRANS NPN 2.6V 75GHZ TSLP-3 |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
BFR840L3RHESDE6327XTSA1 | Cut Tape | 76 | 1 |
|
Buy Now | |||||
![]() |
BFR840L3RHESDE6327XTSA1 | Ammo Pack | 18 Weeks, 4 Days | 1 |
|
Buy Now | |||||
![]() |
BFR840L3RHESDE6327XTSA1 |
|
Get Quote | ||||||||
![]() |
BFR840L3RHESDE6327XTSA1 | 12,265 | 145 |
|
Buy Now | ||||||
![]() |
BFR840L3RHESDE6327XTSA1 | Cut Tape | 16,108 | 1 |
|
Buy Now | |||||
![]() |
BFR840L3RHESDE6327XTSA1 | 12,997 | 1 |
|
Buy Now | ||||||
![]() |
BFR840L3RHESDE6327XTSA1 | 40 Weeks | 15,000 |
|
Buy Now | ||||||
Infineon Technologies AG BFR840L3RHESDBOARDTOBO1BFR840L3RHESDBOARDTOBO1 - Boxed Product (Development Kits) (Alt: BFR840L3RHESDBOARDTOBO1) |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
BFR840L3RHESDBOARDTOBO1 | Box | 111 Weeks | 1 |
|
Get Quote | |||||
Infineon Technologies AG BFR 840L3RHESD E6327BFR 840L3RHESD E6327 |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
BFR 840L3RHESD E6327 | 15,000 | 150 |
|
Buy Now | ||||||
![]() |
BFR 840L3RHESD E6327 | 12,000 |
|
Buy Now |
BFR840L3RHESD Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
---|---|---|---|---|---|---|---|---|
BFR840L3RHESDE6327XTSA1 |
![]() |
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANS RF BIPO NPN 35MA TSLP-3 | Original | 1.15MB |
BFR840L3RHESD Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
Contextual Info: BFR840L3RHESD Robust low noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-07-11 RF & Protection Devices Edition 2012-07-11 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved. |
Original |
BFR840L3RHESD BFR840L3RHESD: | |
LNA ku-bandContextual Info: BFR840L3RHESD Robust ultra low noise SiGe:C Bipolar RF Transistor in very small thin package Data Sheet Revision 1.0, 2012-04-19 RF & Protection Devices Edition 2012-04-19 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG |
Original |
BFR840L3RHESD BFR840L3RHESD: LNA ku-band | |
BFR840L3RHESD
Abstract: Germanium Transistor LNA ku-band
|
Original |
BFR840L3RHESD BFR840L3RHESD: BFR840L3RHESD Germanium Transistor LNA ku-band | |
rf transistor frequency 10.0GHz gain 20 dB
Abstract: 10.0GHZ TRANSISTOR AMPLIFIER ku-band lnb SiGe Microsystems LNA ku-band
|
Original |
BFR840L3RHESD BFR840L3RHESD: rf transistor frequency 10.0GHz gain 20 dB 10.0GHZ TRANSISTOR AMPLIFIER ku-band lnb SiGe Microsystems LNA ku-band | |
TLE4957C
Abstract: SLE66R35E7 SAK-XC2060M-104F80L AA ESD204 SAF-XC2268M-72F66L AA xc2336 tle7242 TLE5041 2EDL23N06 BTN7970
|
Original |