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    Infineon Technologies AG BFR-949T-E6327

    RF TRANS NPN 10V 9GHZ PG-SC75-3D
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    DigiKey BFR-949T-E6327 Reel 6,000
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    BFR949T Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF PDF Size Page count
    BFR949T
    Infineon Technologies NPN Silicon RF Transistor Original PDF 68.42KB 7
    BFR949T
    Infineon Technologies NPN Silicon RF transistor for low noise, high gain broadband amplifiers Original PDF 67.79KB 7
    BFR 949T E6327
    Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANSISTOR RF BIP SC-75 Original PDF 70.39KB
    BFR949TE6327
    Infineon Technologies RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR RF BIP SC-75 Original PDF 7

    BFR949T Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BFR949T

    Abstract: SC75 BFR94
    Contextual Info: BFR949T NPN Silicon RF Transistor Preliminary data 3  For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA  fT = 9 GHz F = 1.0 dB at 1 GHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original
    BFR949T VPS05996 Aug-09-2001 BFR949T SC75 BFR94 PDF

    Contextual Info: BFR949T NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 2 3 1 • fT = 9 GHz, F = 1 dB at 1 GHz ESD Electrostatic discharge sensitive device, observe handling precaution! Type BFR949T Marking


    Original
    BFR949T PDF

    Contextual Info: BFR949T NPN Silicon RF Transistor 3  For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA  f T = 9 GHz F = 1.0 dB at 1 GHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    Original
    BFR949T VPS05996 PDF

    BFR949T

    Abstract: MA457 MARKING C6 BFR94
    Contextual Info: BFR949T NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 2 3 1 • fT = 9 GHz, F = 1 dB at 1 GHz ESD Electrostatic discharge sensitive device, observe handling precaution! Type BFR949T Marking


    Original
    BFR949T BFR949T MA457 MARKING C6 BFR94 PDF

    TRANSISTOR MARKING NK

    Abstract: BCR108T BFR949T SC75 SC79 SCD80 BFR94
    Contextual Info: BFR949T NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 2 3 • fT = 9 GHz, F = 1 dB at 1 GHz 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution!


    Original
    BFR949T TRANSISTOR MARKING NK BCR108T BFR949T SC75 SC79 SCD80 BFR94 PDF

    BFR94

    Contextual Info: BFR949T NPN Silicon RF Transistor 3  For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA  f T = 9 GHz F = 1.0 dB at 1 GHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    Original
    BFR949T VPS05996 BFR94 PDF

    BFR949T

    Abstract: SC75 GMA marking
    Contextual Info: BFR949T NPN Silicon RF Transistor 3  For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA  f T = 9 GHz F = 1.0 dB at 1 GHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    Original
    BFR949T VPS05996 Oct-24-2001 BFR949T SC75 GMA marking PDF