BFS 60 Search Results

BFS55A

Abstract: Bfs 60 60dBi transistor b54
Contextual Info: SIEMENS BFS 55A NPN Silicon RF Transistor • For low-distortion broadband amplifiers up 1 at collector currents from 10 mA to 30 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BFS 55A BFS 55A Q62702-F454

Contextual Info: BFS-15W02 Intel Atom Processor D2550 15.6’’ Smart Touch Computer BFS-15W02-S BFS-15W02-V Features Intel new generation CPU - Cedar View D2550 15.6’’ 16:9 Color Active Matrix TFT flat panel display with LED backlight Easy to clean, full-flat touch panel

BFS17A

Abstract: BFS17AR marking E2
Contextual Info: TELEFUNKEN Semiconductors BFS 17 A / BFS 17 AR Silicon NPN Planar RF Transistor Applications Wide-band, low noise, small signal amplifiers up to UHF frequencies, high speed logic applications and oscillator applications. Features D Low noise figure D High power gain

1607B

Abstract: B69640 B696 BFS 65 B412 BBY51 U2730B-BFS U2730B-BFSG1 dab Receiver b69640g
Contextual Info: U2730B-BFS L-Band Down-Converter for DAB Receivers Description The U2730B-BFS is a monolithic integrated L-band down-converter circuit fabricated in Atmel Wireless & Microcontrollers’ advanced UHF5S technology. It covers all functions of an L-band down-converter in a DAB

transistor marking MCs

Abstract: SOT 23 CODE MCS NPN marking MCs marking MCs sot-323 Q62702-F1645 bfs 11
Contextual Info: BFS 17W NPN Silicon RF Transistor • For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA Type Marking Ordering Code Pin Configuration BFS 17W MCs 1=B Q62702-F1645 2=E Package 3=C SOT-323 Maximum Ratings of any single Transistor Parameter

BFS17

Abstract: transistor BFs 18 BFS17R marking E1
Contextual Info: BFS 17 / BFS 17 R TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 2 1 3 3 94 9280 BFS17 Marking: E1 Plastic case SOT 23 1= Collector; 2= Base; 3= Emitter

VSO05561

Contextual Info: BFS 17W NPN Silicon RF Transistor 3
For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA 2 1 Type Marking BFS 17W MCs Pin Configuration 1=B 2=E VSO05561 Package 3=C SOT-323 Maximum Ratings Parameter Symbol Collector-emitter voltage

Contextual Info: BFS 17P NPN Silicon RF Transistor 3
For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA 2 1 Type Marking BFS 17P MCs Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT-23 Maximum Ratings Parameter Symbol Collector-emitter voltage

SOT 23 CODE MCS

Abstract: transistor marking MCs Q62702-F940 bfs 11 SOT 23 marking MCS
Contextual Info: BFS 17P NPN Silicon RF Transistor • For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA • CECC-type available: CECC 50002/248. Type Marking Ordering Code Pin Configuration BFS 17P MCs 1=B Q62702-F940 2=E Package 3=C SOT-23 Maximum Ratings of any single Transistor

6c2 transistor

Abstract: transistor marking MCs Q62702-F1645 transistor BFs 18 SOT 23 CODE MCS
Contextual Info: BFS 17S NPN Silicon RF Transistor • For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA Tape loading orientation Type Marking Ordering Code Pin Configuration BFS 17S MCs 1/4=B1/B2 2/5=E1/E2 3/6=C2/C1 SOT-363 Q62702-F1645 Package Maximum Ratings of any single Transistor

VPS05604

Abstract: bfs 11
Contextual Info: BFS 17S NPN Silicon RF Transistor 4
For broadband amplifiers up to 1 GHz at collector 5 6 currents from 1 mA to 20 mA 2 C1 E2 B2 6 5 4 3 1 VPS05604 TR2 TR1 1 2 3 B1 E1 C2 EHA07196 Type Marking BFS 17S MCs Pin Configuration Package 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT-363

BFS480

Abstract: Q62702-F1531 GG24
Contextual Info: BFS 480 NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • fT = 7GHz F = 1.5dB at 900MHz • Two (galvanic) internal isolated Transistors in one package

64-65-BFF/64-65-BFS

Contextual Info: Fused Filtered Power Entry Modules Fused Filtered Power Entry Modules For General Purpose Applications 64-65-BFF/64-65 BFS Series Features • ■ ■ ■ ■ ■ ■ ■ North American and Metric fuse holders available Fuse holder provides effective EMI suppression

482 transistor

Abstract: Q62702-F1573 GMA marking
Contextual Info: BFS 482 NPN Silicon RF Transistor • For low-noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA. • fT = 8GHz F = 1.2dB at 900MHz • Two galvanic internal isolated Transistors in one package ESD: Electrostatic discharge sensitive device, observe handling precaution!

IEC 320 power inlet with fuse

Abstract: 64-XXX-020-5-12 250VAC 0.1uF 120
Contextual Info: Fused Filtered Power Entry Modules For General Purpose Applications 64-65-BFF/64-65-BFS Series Features Fused Filtered Power Entry Modules • ■ ■ ■ ■ ■ ■ Tested and found to be IAW VDE 0565 Part 3. North American and Metric fuse holders available

Q62702-F1574

Abstract: GMA marking
Contextual Info: BFS 483 NPN Silicon RF Transistor • For low-noise, high-gain broadband amplifier at colector current from 2mA to 28mA • fT = 8GHz F = 1.2dB at 900MHz • Two galvanic internal isolated Transistors in one package ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: Cree P4 LED CP41B-BFS/GFS Data Sheet This revolutionary package design allows the lighting designer to reduce the number of LEDs required and provide a more uniform and unique illuminated appearance than with other LED solutions. This is possible through the efficient optical package design and high

Contextual Info: Tem ic U2754B-B S e m i c o n d u c t o r s Frequency Synthesizer for DAB L-Band Down-Converter Description The U2754B-BFS is a monolithic integrated frequencysynthesizer-circuit fabricated with TEMIC’s advanced UHF5S technology. It controls a VCO to synthesize a

Contextual Info: 98-286 for datasheet10.pdf 7/24/98 9:03 AM Page 1 Black neg. PMS 301 neg. Fused Filtered Power Entry Modules For General Purpose Applications 64-65-BFF/64-65 BFS Series Features • ■ ■ ■ ■ ■ ■ ■ North American and Metric fuse holders available

Contextual Info: Cree P4 LED CP41B-BFS/GFS Data Sheet This revolutionary package design allows the lighting designer to reduce the number of LEDs required and provide a more uniform and unique illuminated appearance than with other LED solutions. This is possible through the eficient optical package design and high

Siemens A 1458

Abstract: amplifier siemens sot-363
Contextual Info: SIEMENS BFS 481 NPN Silicon RF Transistor • For low-noise, high-gain broadband amplifier at collector currents from 0.5 to 12 mA • fy ~ 8 GHz F = 1.4 dE5 at 900 MHz • Two galvanic internal isolated Transistors in one package I 91T I ETl KC2 II m Q62702-F1572

SOT 23 CODE MCS

Abstract: transistor marking MCs TP 1437 NPN marking MCs CODE MCS sot-23 Transistor MARKING CODE ZG SOT 23 marking MCS
Contextual Info: SIEMENS BFS 17P NPN Silicon RF Transistor • For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA • CECC-type available: CECC 50002/248. Marking Ordering Code Pin Configuration BFS17P MCs 1 =B Q62702-F940 Package fO li m Type 3=C SOT-23

BFS480

Abstract: VPS05604
Contextual Info: BFS 480 NPN Silicon RF Transistor 4
For low noise, low-power amplifiersin mobile 5 6 communication systems pager, cordless telephone at collector currents from 0.2 mA to 8 m
f T = 7 GHz F = 1.5 dB at 900 MHz 2 3 1
Two (galvanic) internal isolated VPS05604

Q62702-F1572

Abstract: GMA marking
Contextual Info: BFS 481 NPN Silicon RF Transistor • For low-noise, high-gain broadband amplifier at collector currents from 0.5 to 12 mA • fT = 8 GHz F = 1.4 dB at 900 MHz • Two galvanic internal isolated Transistors in one package ESD: Electrostatic discharge sensitive device, observe handling precaution!