BFS17 Search Results

Contextual Info: SIEMENS BFS17W NPN Silicon RF Transistor >For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA Marking Ordering Code B F S 17W M Cs Pin Configuration Q62702-F1645 1 =B Package ro il m Type 3 =C SOT-323 Maximum Ratings of any single Transistor

BFS17

Abstract: H2D SOT23 h2d transistor MARKING 16 transistor sot23 H2D Marking
Contextual Info: BFS17 NPN 1GHz Medium Wideband Transistor P b Lead Pb -Free 3 COLLECTOR 3 1 1 BASE Applications: SOT-23 2 EMITTER * Mixers and oscillators in TV tuners * RF communications equipment. 2 Descreption: NPN Transistor In a Plastic SOT-23 Package. MAXIMUM RATINGS (TA = 25ºC)

transistor E1p

Contextual Info: MCC BFS17
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"#
Features • • • NPN Transistor 25 mA 15 Volts 300 mWatts NPN transistor in a plastic SOT-23 package. A wide range of RF applications such as:

Contextual Info: BFS17/BFS17R/BFS17W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 1 13 581 13 581 94 9280 2

transistor E1p

Abstract: E1p SOT23 marking
Contextual Info: MCC TM Micro Commercial Components BFS17
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"#
Features • • • • NPN Transistor 25 mA 15 Volts 300 mWatts NPN transistor in a plastic SOT-23 package.

BFS17

Abstract: BFS17H BFS17L DSA003678
Contextual Info: BFS17 BFS17L BFS17H BFS17 BFS17L BFS17H SOT23 NPN SILICON PLANAR RF TRANSISTORS ISSUE 3 – JANUARY 1996 PARTMARKING DETAILS — TYPICAL CHARACTERISTICS BFS17 - E1 BFS17L - E1L BFS17H - E1H 80 hFE - Normalised Gain f T - GHz 3 f=400MHz 2 VCE=10V VCE=5V 1 0.1

BFY90 PHILIPS

Contextual Info: bbS3T31 0032220 254 Philips Semiconductors • AP X Product specification NPN 1 GHz wideband transistor crystal X3A-BFW92 \ N AMER PHILIPS/DISCRETE DESCRIPTION bRE D MECHANICAL DATA Crystal NPN crystal used in BFW92 SOT37 , BFY90 (TO-72) and BFS17 (SOT23). Crystals are supplied as whole

Contextual Info: wmmt BFS17/BFS17R/BFS17W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features • High power gain • SMD-package 1 BFS17 Marking: E1

11105 IC

Abstract: npn transistor w5 BFS17 ic 11105 circuits voltage Transistor code 1z bfs17 mark SOT23 code fj transistor 313 sot23 transistor x 313 RF TRANSISTOR SOT23 5
Contextual Info: BFS17 NPN Silicon planar RF transistor BFS 17 is an epitaxial NPN silicon planar RF transistor in a plastic package 23 A 3 DIN 41 869 SOT-23 , for use in film circuits up into the GHz range. The transistor marked: MA 1±M5 1-0.05 r* * ? * * • ; T ype Code

Contextual Info: DISCRETE SEMICONDUCTORS DAT BFS17 NPN 1 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 1 GHz wideband transistor BFS17 DESCRIPTION NPN transistor in a plastic SOT23 package. 3 handbook, halfpage APPLICATIONS

NPN marking MCs

Abstract: RF NPN POWER TRANSISTOR C 10-12 GHZ marking 4B2 BCR108S BFS17S
Contextual Info: BFS17S NPN Silicon RF Transistor • For broadband amplifiers up to 1 GHz at 4 5 6 collector currents from 1 mA to 20 mA • BFS17S: For orientation in reel see 1 2 3 package information below • Pb-free RoHS compliant package 1) • Qualified according AEC Q101

BFS17S

Abstract: VPS05604 NPN marking MCs
Contextual Info: BFS17S NPN Silicon RF Transistor 4
For broadband amplifiers up to 1 GHz at collector 5 6 currents from 1 mA to 20 mA 2 C1 E2 B2 6 5 4 3 1 VPS05604 TR2 TR1 1 2 3 B1 E1 C2 EHA07196 Type Marking BFS17S MCs Pin Configuration Package 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT363

transistor 431b

Abstract: 431B TRANSISTOR marking code gj BFS17 BFS17A MARKING 431B SOT-23
Contextual Info: Li3E » • t b S 3 tì24 007 431b TO? M S I C 3 BFS17A napc / p h i l i p s sen ic o n d FOR D E T A ILE D IN FO R M A TIO N SEE THE LATEST ISSUE OF HANDBO OK SC14 0 R DATASHEET N-P-N 2 GHz WIDEBAND TRANSISTOR N-P-N transistor in a plastic SOT-23 envelope. It is intended fo r a wide range o f v.h.f. and u.h.f.

Contextual Info: BFS17A / BFS17AR / BFS17AW Vishay Semiconductors Silicon NPN Planar RF Transistor 1 SOT-23 Features • • • • • Low noise figure High power gain e3 Small collector capacitance Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

RF NPN POWER TRANSISTOR C 10-12 GHZ

Abstract: BCR108W BFS17W
Contextual Info: BFS17W NPN Silicon RF Transistor • For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA • Pb-free RoHS compliant 3 2 1 package 1) • Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution!

70.2 marking smd npn Transistor

Abstract: transistor smd 661 752 702 TRANSISTOR smd SOT23 smd transistor marking j5 smd marking 271 Sot 704 TRANSISTOR smd SOT23 SMD IC marking 632 SOT23 marking 828 SOT MARKING 213 transistor smd marking NA sot-23
Contextual Info: BFS17 / BFS17R / BFS17W Vishay Semiconductors Silicon NPN Planar RF Transistor 1 SOT-23 Features • • • • High power gain SMD package e3 Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 2 3 1 SOT-23 Applications

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BFS17LT1 The RF Line NPN S ilico n H igh-Frequency T ran sisto r Designed primarily for use in high-gain, low-noise amplifier, oscillator and mixer applications. Packaged for thick or thin film circuits using surface mount

Contextual Info: BFS17W NPN Silicon RF Transistor 3
For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA 2 1 Type Marking BFS17W MCs Pin Configuration 1=B 2=E VSO05561 Package 3=C SOT323 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage

sot-23 MARKING CODE ZA

Abstract: sot-23 CODE 41 bfs17p mc
Contextual Info: NPN Silicon RF Transistor BFS17P • For broadband amplifiers up to 1 G H z at collector currents from 1 to 20 mA. E C E C C -typ e available: C E C C 50002/262. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code

Contextual Info: BFS17L Not Recommended for New Design Please Use BFS17H BFS17L BFS17H SOT23 NPN SILICON PLANAR RF TRANSISTORS ISSUE 4 – MARCH 2001 PARTMARKING DETAILS — E C BFS17L - E1L BFS17H - E1H B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage

Contextual Info: Philips Semiconductors Product specification NPN 1 GHz wideband transistor APPLICATIONS BFS17W PINNING Primarily intended as a mixer, oscillator and IF amplifier in UHF and VHF tuners. DESCRIPTION PIN DESCRIPTION 1 base 2 emitter 3 collector 1 Silicon NPN transistor in a plastic

FHC30LG

Abstract: ne72089 KC535C NE388-06 AL307BM IC 78L12 SOT89 KC535B AL307 79L05 hearing aid lm358
Contextual Info: RF TRANSISTORS Type P - p- n-p N - n-p-n MMBR5031 2SA1778 2SC3770 2SC4269 MMBR5179 2SC3837K 2SC3545 2SC3771 2SA1669 2SC4364 2SC4270 2SC4365 2SC3838K BFS17,BFS17A 2SC3841 BFR92A BFR93 2SC4569 BFR93P 2SC3774 BFR92P 2SC3775 BFR93A BFR92 2SC4568 2SC4857 MMBR911

E2p 28 transistor

Abstract: E2p transistor transistor applications
Contextual Info: Short-form product specification Philips Semiconductors NPN 3 GHz wideband transistor BFS17A PINNING APPLICATIONS • It is intended for a wide range of RF applications such as TV-tuners. PIN DESCRIPTION DESCRIPTION 1 base 2 emitter 3 collector NPN transistor in a plastic SOT23

BFS17

Abstract: philips tuners BFS17 E1 marking code ce SOT23 RF NPN POWER TRANSISTOR 2.5 GHZ RF POWER TRANSISTOR NPN TRANSISTOR SOT23 MSB003
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFS17 NPN 1 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BFS17 DESCRIPTION NPN transistor in a plastic SOT23 package.